BYV42EB-T [NXP]

DIODE 30 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode;


型号：	BYV42EB-T
厂家：	NXP
描述：	DIODE 30 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode 二极管
文件：	总7页 (文件大小：47K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

FEATURES

SYMBOL

QUICK REFERENCE DATA

V_R= 150 V/ 200 V

V_F≤ 0.85 V

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

I_O(AV)= 30 A

I_RRM= 0.2 A

t_rr≤ 28 ns

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power

supplies.

The BYV42E series is supplied in the SOT78 conventional leaded package.

The BYV42EB series is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

DESCRIPTION

anode 1 (a)

cathode (k) ¹

tab

anode 2 (a)

cathode (k)

1 2 3

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN.

BYV42E / BYV42EB

MAX.

UNIT

-150

150

-200

200

V_RRM

V_RWM

V_R

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

T_mb≤ 144˚C

I_O(AV)

I_FRM

I_FSM

Average rectified output current square wave

(both diodes conducting)

δ = 0.5; T_mb≤ 108 ˚C

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

Non-repetitive peak forward

current per diode

T_mb≤ 108 ˚C

t = 10 ms

150

160

t = 8.3 ms

sinusoidal; with reapplied

V_RWM(max)

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

I_RRM

I_RSM

0.2

per diode

Non-repetitive peak reverse

current per diode

t_p= 100 µs

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

1. It is not possible to make connection to pin 2 of the SOT404 package

2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting

tab.

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_C

Electrostatic discharge

capacitor voltage

Human body model;

C = 250 pF; R = 1.5 kΩ

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to per diode

2.4

1.4

K/W

mounting base

both diodes

Thermal resistance junction to SOT78 package, in free air

ambient

SOT404 and SOT428 packages,

pcb mounted, minimum footprint,

FR4 board

ELECTRICAL CHARACTERISTICS

characteristics are per diode at T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

Forward voltage

I_F= 15 A; T_j= 150˚C

I_F= 15 A

0.78

0.95

1.00

0.5

0.85

1.05

1.20

I_F= 30 A

I_R

Reverse current

V_R= V_RWM; T_j= 100 ˚C

V_R= V_RWM

µA

100

Q_s

t_rr1

Reverse recovery charge

Reverse recovery time

I_F= 2 A; V_R≥ 30 V; -dI_F/dt = 20 A/µs

I_F= 1 A; V_R≥ 30 V;

-dI_F/dt = 100 A/µs

t_rr2

V_fr

Reverse recovery time

Forward recovery voltage

I_F= 0.5 A to I_R= 1 A; I_rec= 0.25 A

I_F= 1 A; dI_F/dt = 10 A/µs

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

0.5A

time

= 0.25A

rec

100%

10%

trr2

rrm

I = 1A

Fig.1. Definition of t_rr1, Q_sand I_rrm

Fig.4. Definition of t_rr2

PF / W

Vo = 0.705 V

Tmb(max) / C

D = 1.0

BYV42

102

114

126

138

150

Rs = 0.0097 Ohms

0.5

0.2

time

0.1

D =

IF(AV) / A

time

Fig.2. Definition of V_fr

Fig.5. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; square current waveform where

I_F(AV)=I_F(RMS)x √D.

Tmb(max) / C

a = 1.57

PF / W

Vo = 0.705 V

BYV42

114

Rs = 0.0097 Ohms

1.9

2.2

2.8

126

D.U.T.

Voltage Pulse Source

138

150

Current

shunt

to ’scope

IF(AV) / A

Fig.3. Circuit schematic for t_rr2

Fig.6. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; sinusoidal current waveform where a = form

factor = I_F(RMS)/ I_F(AV)

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

trr / ns

1000

Qs / nC

100

IF=20A

10A

IF=20A

100

IF=1A

1.0

dIF/dt (A/us)

100

1.0

100

-dIF/dt (A/us)

Fig.7. Maximum t_rrat T_j= 25 ˚C; per diode

Fig.10. Maximum Q_sat T_j= 25 ˚C; per diode

Transient thermal impedance, Zth j-mb (K/W)

Irrm / A

IF=20A

IF=1A

0.1

0.01

D =

0.001

0.01

1us

10us 100us 1ms

10ms 100ms

BYV42E

10s

100

pulse width, tp (s)

-dIF/dt (A/us)

Fig.8. Maximum I_rrmat T_j= 25 ˚C; per diode

Fig.11. Transient thermal impedance; per diode;

Z_{th j-mb}= f(t_p).

IF / A

Tj = 150 C

Tj = 25 C

typ

max

1.0

0.5

1.5

VF / V

Fig.9. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

1 2 3

max

(2x)

0,9 max (3x)

0,6

2,4

2,54 2,54

Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

4.5 max

1.4 max

10.3 max

11 max

15.4

2.5

0.85 max

(x2)

0.5

2.54 (x2)

Fig.13. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

11.5

9.0

17.5

2.0

3.8

5.08

Fig.14. SOT404 : soldering pattern for surface mounting.

Notes

1. Epoxy meets UL94 V0 at 1/8".

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

July 1998

Rev 1.200

BYV42EB-T [NXP]

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