BYV42G-200 [NXP]

15A, 200V, SILICON, RECTIFIER DIODE, TO-262AA, PLASTIC, TO-262, I2PAK-3;


型号：	BYV42G-200
厂家：	NXP
描述：	15A, 200V, SILICON, RECTIFIER DIODE, TO-262AA, PLASTIC, TO-262, I2PAK-3 超快软恢复二极管快速软恢复二极管超快速软恢复能力电源
文件：	总11页 (文件大小：140K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYV42G-200

I2P

Dual ultrafast power diode

Rev. 01 — 11 January 2011

Product data sheet

1. Product profile

1.1 General description

Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package.

1.2 Features and benefits

High reverse voltage surge capability

High thermal cycling performance

Low thermal resistance

Soft recovery characteristic minimizes

power consuming oscillations

Very low on-state loss

1.3 Applications

Output rectifiers in high-frequency

switched-mode power supplies

1.4 Quick reference data

Table 1.

Symbol

V_RRM

Quick reference data

Parameter

Conditions

Min Typ Max Unit

repetitive peak reverse

voltage

200

I_O(AV)

average output current square-wave pulse; δ = 0.5 ;

T_mb≤ 104 °C; both diodes

conducting; see Figure 1;

see Figure 2

I_FSM

I_RRM

V_ESD

non-repetitive peak

forward current

T_j(init)= 25 °C; t_p= 10 ms;

sine-wave pulse; per diode

160

0.2

repetitive peak reverse t_p= 2 µs; δ = 0.001

current

electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ;

voltage

Static characteristics

V_Fforward voltage

all pins

I_F= 15 A; T_j= 150 °C;

see Figure 4

0.78 0.85

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

Table 1.

Symbol

Dynamic characteristics

Quick reference data …continued

Parameter Conditions

Min Typ Max Unit

t_rr

reverse recovery time

I_F= 1 A; V_R= 30 V;

dI_F/dt = 100 A/µs; T_j= 25 °C;

ramp recovery; see Figure 5

I_R= 1 A; I_F= 0.5 A; T_j= 25 °C;

step recovery; measured at

reverse current = 0.25 A;

see Figure 6

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

anode 1

cathode

anode 2

sym125

mounting base; connected to cathode

SOT226A (I2PAK)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BYV42G-200

I2PAK

plastic single-ended package (I2PAK); TO-262

SOT226A

BYV42G-200

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Product data sheet

Rev. 01 — 11 January 2011

2 of 11

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_RRM

V_RWM

V_R

Parameter

Conditions

Min

Max

200

Unit

repetitive peak reverse voltage

crest working reverse voltage

reverse voltage

I_O(AV)

average output current

square-wave pulse; δ = 0.5 ; T_mb≤ 104 °C;

both diodes conducting; see Figure 1;

see Figure 2

I_FRM

I_FSM

repetitive peak forward current δ = 0.5 ; t_p= 25 µs; T_mb≤ 104 °C; per diode

non-repetitive peak forward

current

t_p= 8.3 ms; sine-wave pulse; T_j(init)= 25 °C;

per diode

150

t_p= 10 ms; sine-wave pulse; T_j(init)= 25 °C;

per diode

160

I_RRM

I_RSM

repetitive peak reverse current δ = 0.001 ; t_p= 2 µs

0.2

non-repetitive peak reverse

current

t_p= 100 µs

T_stg

T_j

storage temperature

junction temperature

-40

150

°C

V_ESD

electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins

003aac342

003aac343

a = 1.57

1.9

δ = 1

P_tot

(W)

P_tot

(W)

0.5

2.2

2.8

0.2

4.0

0.1

_F(AV)(A)

I_F(AV)(A)

Fig 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

Fig 2. Forward power dissipation as a function of

average forward current; sinusoidal waveform;

maximum values

BYV42G-200

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Product data sheet

Rev. 01 — 11 January 2011

3 of 11

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to mounting base

with heatsink compound; both diodes

conducting

1.4

K/W

with heatsink compound; per diode;

see Figure 3

2.4

K/W

R_th(j-a)

thermal resistance from

junction to ambient

in free air

003aac345

th(j-mb)

(K/W)

−1

−2

−3

δ =

−6

−5

−4

−3

−2

−1

(s)

Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width

BYV42G-200

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Product data sheet

Rev. 01 — 11 January 2011

4 of 11

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_Fforward voltage

I_F= 15 A; T_j= 150 °C; see Figure 4

I_F= 15 A; T_j= 25 °C; see Figure 4

I_F= 30 A; T_j= 25 °C; see Figure 4

V_R= 200 V; T_j= 100 °C

0.78

0.95

0.85

1.05

1.2

I_R

reverse current

0.5

µA

V_R= 200 V; T_j= 25 °C

100

Dynamic characteristics

Q_r

recovered charge

I_F= 2 A; V_R= 30 V; dI_F/dt = 20 A/µs;

T_j= 25 °C

t_rr

reverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/µs;

ramp recovery; T_j= 25 °C; see Figure 5

I_F= 0.5 A; I_R= 1 A; step recovery;

measured at reverse current = 0.25 A;

T_j= 25 °C; see Figure 6

V_FR

forward recovery voltage

I_F= 1 A; dI_F/dt = 10 A/µs; T_j= 25 °C;

see Figure 7

003aac344

I_F

(A)

time

25 %

(1)

(2)

(3)

100 %

003aac562

0.5

1.5

_F(V)

Fig 4. Forward current as a function of forward

voltage

Fig 5. Reverse recovery definitions; ramp recovery

BYV42G-200

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Product data sheet

Rev. 01 — 11 January 2011

5 of 11

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

time

0.25 x I

FRM

003aac563

time

001aab912

Fig 6. Reverse recovery definitions; step recovery

Fig 7. Forward recovery definitions

BYV42G-200

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Product data sheet

Rev. 01 — 11 January 2011

6 of 11

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

7. Package outline

Plastic single-ended package (I2PAK); low-profile 3-lead TO-262

SOT226A

10 mm

scale

Dimensions

Unit

max 4.7 1.40 0.95 1.40 1.7 0.65 9.4 1.32 10.30

mm nom

min 4.3 1.15 0.70 1.14 1.3 0.45 8.6 1.02 9.65

15.0

12.5

2.6

2.54

(REF)

3.0

(REF)

2.2

sot226a_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

TO-262

JEITA

09-08-17

09-08-25

SOT226A

Fig 8. Package outline SOT226A (I2PAK)

BYV42G-200

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Product data sheet

Rev. 01 — 11 January 2011

7 of 11

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

8. Revision history

Table 7.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BYV42G-200 v.1

20110111

Product data sheet

BYV42G-200

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Product data sheet

Rev. 01 — 11 January 2011

8 of 11

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

9. Legal information

9.1 Data sheet status

Document status^[1][2]

Product status^[3]

Definition

Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

Suitability for use — NXP Semiconductors products are not designed,

9.2 Definitions

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

BYV42G-200

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Product data sheet

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9 of 11

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

non-automotive qualified products in automotive equipment or applications.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

BYV42G-200

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Product data sheet

Rev. 01 — 11 January 2011

10 of 11

BYV42G-200

NXP Semiconductors

Dual ultrafast power diode

11. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

Thermal characteristics . . . . . . . . . . . . . . . . . . .4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7

Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .8

Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.1

9.2

9.3

9.4

Contact information. . . . . . . . . . . . . . . . . . . . . .10

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 January 2011

Document identifier: BYV42G-200

BYV42G-200 [NXP]

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