BYV97GAMO [NXP]
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| 型号： | BYV97GAMO |
| 厂家： | 
NXP |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BYV97 series
Fast soft-recovery
controlled avalanche rectifiers
1996 Jun 07
Product specification
Supersedes data of February 1994
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV97 series
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD57 package, using a high temperature alloyed construction.
This package is hermetically sealed and fatigue free as coefficients of
expansion of all used parts are matched.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
k
a
absorption capability
MAM047
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYV97F
−
−
1200
1400
V
V
BYV97G
VR
continuous reverse voltage
BYV97F
−
−
−
1200
1400
1.6
V
V
A
BYV97G
IF(AV)
average forward current
Ttp = 60 °C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
IF(AV)
average forward current
Tamb = 50 °C; PCB mounting
(see Fig. 12); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
−
0.9
A
IFRM
repetitive peak forward current
Ttp = 65 °C; see Fig.4
−
−
−
15
8
A
A
A
Tamb = 65 °C; see Fig.5
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
20
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
10 mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Fig.7
1996 Jun 07
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV97 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
IF = 3 A; Tj = Tj max; see Fig.8
IF = 3 A; see Fig.8
IR = 0.1 mA
1.35
1.65
V
V
−
−
V(BR)R
reverse avalanche
breakdown voltage
BYV97F
BYV97G
1300
1500
−
−
−
−
−
−
1
V
V
IR
reverse current
VR = VRRMmax
see Fig.9
;
µA
µA
ns
VR = VRRMmax; Tj = 165 °C;
see Fig.9
−
−
−
−
150
500
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.14
Cd
f = 1 MHz; VR = 0 V; see Fig.11
−
−
35
−
pF
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Figs 10 and 13
−
5
A/µs
maximum slope of
reverse recovery current
dIR
--------
dt
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
K/W
100
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 12.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 07
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV97 series
GRAPHICAL DATA
MBD419
MBD420
1.2
2.0
handbook, halfpage
handbook, halfpage
I
F(AV)
I
(A)
F(AV)
1.6
(A)
lead length 10 mm
0.8
1.2
0.8
0.4
0
0.4
0
0
0
100
200
100
200
o
o
T
tp
( C)
T
( C)
amb
a = 1.57; VR = VRRMmax; δ = 0.5.
a = 1.57; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.12.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MBD448
16
I
= 0.05
δ
FRM
(A)
12
0.1
8
4
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
Ttp = 65°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV97 series
MBD442
10
I
FRM
(A)
8
= 0.05
δ
6
4
2
0.1
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
Tamb = 65 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MBD428
MBD433
3
200
handbook, halfpage
handbook, halfpage
1.57
1.42
a = 3
2.5
2
P
(W)
T
o
j
( C)
2
1
100
BYV97F
1000
BYV97G
0
0
0
1
2
0
2000
I
(A)
V
(V)
R
F(AV)
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.6 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.7 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 07
5
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV97 series
MGD316
MGC574
3
10
10
handbook, halfpage
handbook, halfpage
I
F
I
R
(A)
(µA)
8
2
10
6
4
2
10
1
1
10
0
0
1
2
3
0
100
200
o
V
(V)
T ( C)
j
F
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
VR = VRRMmax
.
Fig.8 Forward current as a function of forward
voltage; maximum values.
Fig.9 Reverse current as a function of junction
temperature; maximum values.
MBD439
10
t
rr
(µs)
I
=
F
1
5 A
1 A
1
10
1
2
10
1
10
10
dl /dt (A/µs)
F
Tj = 25°C.
For definitions see Fig. 13.
Fig.10 Maximum reverse recovery time as a function of the rate of fall of forward current.
6
1996 Jun 07
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV97 series
MGD317
2
10
50
25
handbook, halfpage
handbook, halfpage
C
d
(pF)
10
7
50
2
3
1
1
2
3
MGA200
10
10
10
V
(V)
R
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.11 Diode capacitance as a function of reverse
voltage; typical values.
Fig.12 Device mounted on a printed-circuit board.
I
andbook, halfpage
F
dI
F
dt
t
rr
t
10%
dI
R
dt
100%
I
R
MGC499
Fig.13 Reverse recovery definitions.
1996 Jun 07
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV97 series
DUT
I
F
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr < 7 ns.
Source impedance: 50 Ω; tr < 15 ns.
Fig.14 Test circuit and reverse recovery time waveform and definition.
1996 Jun 07
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV97 series
PACKAGE OUTLINE
k
a
0.81
max
3.81
max
4.57
max
MBC880
28 min
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.15 SOD57.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 07
9
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