BYV99AMO [NXP]
DIODE 0.55 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode;
| 型号： | BYV99AMO |
| 厂家： | 
NXP |
| 描述： | DIODE 0.55 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 局域网 二极管 |
| 文件： | 总8页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BYV99
Ultra fast low-loss
controlled avalanche rectifier
1996 Feb 19
Product specification
Supersedes data of May 1993
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
• Low leakage current
• Excellent stability
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
• Guaranteed avalanche energy
absorption capability
k
a
• Available in ammo-pack.
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
CONDITIONS
MIN.
MAX.
600
UNIT
−
−
−
V
V
A
600
IF(AV)
Ttp = 50 °C; lead length = 10 mm
see Fig. 2;
1.00
averaged over any 20 ms period;
see also Fig. 6
Tamb = 60 °C; PCB mounting (see
−
0.55
A
Fig.10); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
IFRM
repetitive peak forward current
Ttp = 50 °C; see Fig. 4
−
−
−
9
A
A
A
Tamb = 60 °C; see Fig. 5
5
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
20
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
10
mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+150
°C
°C
1996 Feb 19
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
IF = 1 A; Tj = Tj max; see Fig. 7
IF = 1 A; see Fig. 7
IR = 0.1 mA
−
−
−
−
−
1.5
2.7
−
V
V
V
V(BR)R
IR
reverse avalanche
breakdown voltage
700
reverse current
VR = VRRMmax
see Fig. 8
;
−
−
−
−
−
−
5
75
15
µA
µA
ns
VR = VRRMmax; Tj = 150 °C;
see Fig. 8
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig. 12
Cd
f = 1 MHz; VR = 0 V; see Fig. 9
−
−
75
−
pF
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.11
−
3
A/µs
maximum slope of reverse
recovery current
dIR
--------
dt
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
46
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
K/W
K/W
100
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.10.
For more information please refer to the “General Part of associated Handbook”.
1996 Feb 19
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
GRAPHICAL DATA
MRC269
MRC270
1.2
0.8
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
0.6
(A)
0.8
0.4
0.2
0.4
0
0
0
0
100
200
100
200
o
o
T
( C)
T
( C)
amb
tp
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.10.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MRC272
10
I
FRM
δ =
0.05
(A)
8
6
4
2
0
0.1
0.2
0.5
1.0
–2
–1
2
3
4
10
10
1
10
10
10
10
t
(ms)
p
Ttp = 50°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Feb 19
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
MRC271
5.0
δ =
0.05
I
FRM
(A)
4.0
0.1
0.2
3.0
2.0
1.0
0
0.5
1.0
–2
–1
2
3
4
10
10
1
10
10
10
10
t
(ms)
p
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGC593
MRA948
3
6
handbook, halfpage
handbook, halfpage
I
P
(W)
a=3
2.5 2 1.57
1.42
F
(A)
2
1
4
2
0
0
0
0
1
2
2
4
6
I
(A)
V
(V)
F(AV)
F
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Dotted line: Tj = 150 °C.
Solid line: Tj = 25 °C.
Fig.6 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.7 Forward current as a function of forward
voltage; maximum values.
1996 Feb 19
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
MGC594
MGC592
2
2
10
10
handbook, halfpage
handbook, halfpage
I
C
d
R
(A)
10
(pF)
10
1
0
1
1
3
2
o
100
200
10
10
10
T ( C)
j
V
(V)
R
VR = VRRMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.8 Reverse current as a function of junction
temperature; maximum values.
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
50
handbook, halfpage
25
I
andbook, halfpage
F
dI
F
dt
7
50
t
rr
t
10%
dI
R
dt
100%
2
I
R
MGC499
3
MGA200
Dimensions in mm.
Fig.10 Device mounted on a printed-circuit board.
Fig.11 Reverse recovery definitions.
1996 Feb 19
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
1996 Feb 19
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
PACKAGE OUTLINE
k
a
0.81
max
3.81
max
4.57
max
MBC880
28 min
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.13 SOD57.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Feb 19
8
相关型号：
BYV99T/R
DIODE 0.55 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
BYVB32-100-E3/31
Rectifier Diode, 1 Phase, 2 Element, 18A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
VISHAY
BYVB32-100-HE3/45
DIODE 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYVB32-100-HE3/81
DIODE 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYVB32-100/31
Rectifier Diode, 1 Phase, 2 Element, 18A, 100V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
VISHAY
BYVB32-100/81
Rectifier Diode, 1 Phase, 2 Element, 18A, 100V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
VISHAY
©2020 ICPDF网 联系我们和版权申明