BYW29E-100 [NXP]
Rectifier diodes ultrafast, rugged; 整流器呃二极管超快，坚固耐用
| 型号： | BYW29E-100 |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes ultrafast, rugged |
| 文件： | 总8页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀDISCRETE SEMICONDUCTORSꢀ
DATA SHEET
BYW29E series
Rectifier diodes
ultrafast, rugged
Product specification
August 2001
ꢁꢂꢃ Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 100V/ 150 V/ 200 V
VF ≤ 0.895 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
k
a
2
1
IF(AV) = 8 A
IRRM ≤ 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
PIN
DESCRIPTION
cathode
anode
cathode
tab
1
2
The BYW29E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
BYW29E
-100 -150 -200
VRRM
VRWM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
-
-
100
100
100
150
200
200
200
V
V
150
VR
-
-
150
8
V
A
IF(AV)
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward t = 10 ms
square wave; δ = 0.5; Tmb ≤ 128 ˚C
square wave; δ = 0.5; Tmb ≤ 128 ˚C
IFRM
IFSM
-
16
A
-
-
80
88
A
A
current
t = 8.3 ms
sinusoidal; with reapplied VRRM(max)
tp = 2 μs; δ = 0.001
IRRM
IRSM
Tj
Peak repetitive reverse
surge current
Peak non-repetitive reverse tp = 100 μs
surge current
Operating junction
temperature
Storage temperature
-
0.2
0.2
A
A
-
-
150
150
˚C
˚C
Tstg
- 40
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
8
kV
August 2001
1
Rev 1.400
ꢀꢁꢂ Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction in free air
to ambient
-
-
-
2.7
-
K/W
K/W
60
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRWM
VR = VRWM; Tj = 100˚C
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs
IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/μs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/μs
-
-
-
-
-
-
0.8 0.895
0.92 1.05
V
V
V
μA
mA
nC
ns
ns
V
1.1
2
1.3
10
0.6
11
25
20
-
IR
Reverse current
0.2
4
Qrr
trr1
trr2
Vfr
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
20
15
1
-
-
August 2001
2
Rev 1.400
ꢀꢁꢂ Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
dI
0.5A
IF
I
F
F
dt
t
0A
rr
time
I
= 0.25A
rec
IR
Q
100%
10%
s
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
Tmb(max) / C
D = 1.0
PF / W
I
108
115
122
129
136
12
F
Vo = 0.791 V
Rs = 0.013 Ohms
10
8
0.5
time
0.2
6
0.1
V
F
4
t
T
p
t
p
I
D =
V
143
150
2
fr
t
T
V
F
0
0
2
4
6
IF(AV) / A
8
10
12
time
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Tmb(max) / C
a = 1.57
PF / W
R
8
7
6
5
4
3
2
1
0
122
Vo = 0.791 V
Rs = 0.013 Ohms
125.5
129
1.9
2.2
D.U.T.
2.8
132.5
136
Voltage Pulse Source
4
139.5
143
Current
shunt
to ’scope
146.5
150
0
1
2
3
4
IF(AV) / A
5
6
7
8
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
August 2001
3
Rev 1.400
ꢀꢁꢂ Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
trr / ns
1000
Qs / nC
100
IF=10A
5A
2A
IF=10A
100
10
1A
10
IF=1A
1.0
1
1
1.0
10
-dIF/dt (A/us)
100
10
dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 ˚C.
Fig.10. Maximum Qs at Tj = 25 ˚C.
Transient thermal impedance, Zth j-mb (K/W)
Irrm / A
10
10
1
IF=10A
1
0.1
IF=1A
0.1
0.01
p
t
p
t
P
0.01
D
D =
T
t
T
0.001
1us
10us 100us 1ms
10ms 100ms
1s
10s
10
-dIF/dt (A/us)
100
1
pulse width, tp (s)
Fig.8. Maximum Irrm at Tj = 25 ˚C.
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
IF / A
30
20
10
0
Tj=150 C
Tj=25 C
typ
max
0.5
1.5
0
1
VF / V
2
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
August 2001
4
Rev 1.400
ꢀꢁꢂ Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220
SOD59
E
P
A
A
1
q
D
1
D
(1)
2
L
1
L
Q
b
1
L
1
2
b
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
b
e
A
b
D
E
L
D
1
L
1
A
c
UNIT
P
q
Q
L
2
1
1
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
5.08
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
IEC
ISSUE DATE
EIAJ
SOD59
2-lead TO-220
97-06-11
Fig.12. TO220AC; pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 2001
5
Rev 1.400
NXP Semiconductors
Legal information
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
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