BZB100A [NXP]
Dual back-to-back Zener diode; 双背到背的齐纳二极管型号: | BZB100A |
厂家: | NXP |
描述: | Dual back-to-back Zener diode |
文件: | 总10页 (文件大小:62K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZB100A
Dual back-to-back Zener diode
Rev. 01 — 28 January 2008
Product data sheet
1. Product profile
1.1 General description
Dual back-to-back Zener diode in a SOD323 (SC-76) very small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I Non-repetitive peak reverse power dissipation: ≤ 30 W
I Dual back-to-back configuration
I Small plastic package suitable for surface-mounted design
I AEC-Q101 qualified
1.3 Applications
I General regulation functions
I Overvoltage protection for ElectroLuminescent (EL) driver circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Per device
Conditions
Min
Typ
Max
Unit
VZ
working voltage
IZ = 1 mA
95
-
-
-
105
V
A
[1]
IZSM
non-repetitive peak reverse
current
0.23
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Symbol
anode (diode 1)
anode (diode 2)
1
2
1
2
2
006aab041
BZB100A
NXP Semiconductors
Dual back-to-back Zener diode
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BZB100A
SC-76
plastic surface-mounted package; 2 leads
SOD323
4. Marking
Table 4.
Marking codes
Type number
Marking code
BZB100A
AT
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
IZSM
Parameter
Conditions
Min
Max
Unit
[1]
non-repetitive peak reverse
current
-
0.23
A
[1]
[2]
[3]
[4]
[5]
PZSM
non-repetitive peak reverse
power dissipation
-
30
W
-
75
W
Ptot
total power dissipation
Tamb ≤ 25 °C
-
300
540
830
150
+150
+150
mW
mW
mW
°C
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
−55
−65
°C
°C
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2] tp = 10 µs; square wave; Tj = 25 °C prior to surge
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
BZB100A_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 28 January 2008
2 of 10
BZB100A
NXP Semiconductors
Dual back-to-back Zener diode
006aab042
1.0
P
tot
(W)
(1)
0.8
0.6
0.4
0.2
0
(2)
(3)
−75
−25
25
75
125
T
175
(°C)
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for anode 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ
Max Unit
[1]
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
415
230
150
90
K/W
K/W
K/W
K/W
[2]
[3]
[4]
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4] Soldering point of anode.
BZB100A_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 28 January 2008
3 of 10
BZB100A
NXP Semiconductors
Dual back-to-back Zener diode
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Per device
VZ
rdif
IR
working voltage
IZ = 1 mA
IZ = 1 mA
VR = 76 V
IZ = 1 mA
95
-
-
105
700
V
differential resistance
reverse current
-
Ω
-
-
0.05 µA
SZ
Cd
temperature coefficient
diode capacitance
-
123
-
-
mV/K
pF
f = 1 MHz;
VR = 0 V
-
10
006aab043
006aab044
3
2
10
150
S
Z
(mV/K)
P
ZSM
(W)
140
10
130
120
110
100
10
1
10
−5
−4
−3
−2
10
10
10
0
1
2
3
4
5
t
(s)
I (mA)
Z
p
Tj = 25 °C (prior to surge)
Tj = 25 °C to 150 °C
Fig 2. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 3. Temperature coefficient as a function of
working current; typical values
BZB100A_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 28 January 2008
4 of 10
BZB100A
NXP Semiconductors
Dual back-to-back Zener diode
006aab045
−2
−3
−4
−5
−6
−7
−8
−9
10
I
Z
(A)
10
10
10
10
10
10
10
80
90
100
110
120
V
(V)
Z
Tj = 25 °C
Fig 4. Working current as a function of working voltage; typical values
8. Application information
High-voltage Zener diodes can be used as overvoltage protection diodes for Integrated
Circuits (IC) due to their ability to cut off the applied voltage at a well-defined value. One
important application is the protection of EL driver circuits where a driver IC is connected
to an EL foil. Since both the foil as well as the IC are sensitive against voltage overstress,
it is necessary to install an additional protection device in the circuit. Commonly, a
peak-to-peak voltage of 220 V should not be exceeded, such that two 100 V diodes in
back-to-back configuration are used.
CHF
CHF
CLF
E
V+
L+
V
BAT
1
2
3
4
5
10
9
CLF
R
enable
VO
L−
ENABLE
DRIVER IC
8
L
n.c.
7
GND
n.c.
6
BZB100A
EL LAMP
006aab046
Fig 5. Application diagram
BZB100A_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 28 January 2008
5 of 10
BZB100A
NXP Semiconductors
Dual back-to-back Zener diode
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
10. Package outline
1.35
1.15
1.1
0.8
0.45
0.15
1
2.7 1.8
2.3 1.6
2
0.40
0.25
0.25
0.10
Dimensions in mm
03-12-17
Fig 6. Package outline SOD323 (SC-76)
11. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
-115
10000
BZB100A
SOD323
4 mm pitch, 8 mm tape and reel
-135
[1] For further information and the availability of packing methods, see Section 15.
BZB100A_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 28 January 2008
6 of 10
BZB100A
NXP Semiconductors
Dual back-to-back Zener diode
12. Soldering
3.05
2.80
2.10
1.60
solder lands
solder resist
occupied area
solder paste
1.65 0.95
0.50 0.60
msa433
0.50
(2×)
Dimensions in mm
Fig 7. Reflow soldering footprint SOD323 (SC-76)
5.00
4.40
1.40
solder lands
solder resist
occupied area
2.75 1.20
msa415
preferred transport direction during soldering
Dimensions in mm
Fig 8. Wave soldering footprint SOD323 (SC-76)
BZB100A_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 28 January 2008
7 of 10
BZB100A
NXP Semiconductors
Dual back-to-back Zener diode
13. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BZB100A_1
20080128
Product data sheet
-
-
BZB100A_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 28 January 2008
8 of 10
BZB100A
NXP Semiconductors
Dual back-to-back Zener diode
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
14.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
15. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BZB100A_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 28 January 2008
9 of 10
BZB100A
NXP Semiconductors
Dual back-to-back Zener diode
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
9.1
10
11
12
13
14
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14.1
14.2
14.3
14.4
15
16
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 January 2008
Document identifier: BZB100A_1
相关型号:
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