BZD142W-200,115 [NXP]
DIODE 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMEIC SEALED, GLASS, SMD, 2 PIN, Transient Suppressor;
| 型号： | BZD142W-200,115 |
| 厂家： | 
NXP |
| 描述： | DIODE 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMEIC SEALED, GLASS, SMD, 2 PIN, Transient Suppressor 电视 |
| 文件： | 总8页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
age
BZD142W
ZenBlockTM; zener with integrated
blocking diode
Product specification
2001 Oct 10
Supersedes data of 2000 May 01
Philips Semiconductors
Product specification
ZenBlockTM; zener with
integrated blocking diode
BZD142W
FEATURES
handbook, halfpage
• Zener and 600 V/100 ns blocking function in one
package(1)
• Protects MOSFETS or power IC controllers such as
(3)
TINYSwitch (2), TOPSwitch (2) and STARplug
• Glass passivated
MAM433
• Excellent clamping capability and stability
• Supplied in 8 mm embossed tape.
Fig.1 Simplified outline (SOD87).
DESCRIPTION
(4)
Cavity free cylindrical glass package through Implotec
technology. This package is hermetically sealed and
fatigue free as coefficients of expansion of all used parts
are matched.
(1) Types BZD142W-68,-100 and -160 have a 600 V blocking
diode with a minimum trr of 1000 ns.
(2) TINYSwitch and TOPSwitch are trademarks of Power
Integrations.
(3) STARplug is a trademark of Koninklijke Philips Electronics
N.V.
(4) Implotec is a trademark of Koninklijke Philips Electronics N.V.
LIMITING VALUES
SYMBOL
PARAMETER
storage temperature
junction temperature
CONDITIONS
MIN.
−65
MAX.
+150
UNIT
°C
Tstg
Tj
−65
+150
°C
Limiting values zener
Ptot
total power dissipation
Ttp = 105 °C; see Fig.2
−
−
1.5
W
W
PRSM
non-repetitive peak reverse power
dissipation
10/1000 µs exponential pulse;
Tj = 25 °C prior to surge; see Fig.5
100
Limiting values blocking diode
VR
continuous reverse voltage
−
−
600
7.5
V
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
mJ
2001 Oct 10
2
Philips Semiconductors
Product specification
ZenBlockTM; zener with
integrated blocking diode
BZD142W
ELECTRICAL CHARACTERISTICS ZENER/TVS
Tj = 25 °C unless otherwise specified.
REVERSE CURRENT
at STAND-OFF
VOLTAGE
TEMPERATURE
COEFFICIENT CURRENT
TEST
CLAMPING
VOLTAGE
WORKING VOLTAGE
VZ (V) at Itest
TYPE
NUMBER
SUFFIX(1)
V(CL)R
(V)
SZ (%/K) at Itest
Itest (mA)
IR (µA)
at IRSM
(A)(2)
at VR (V)
MIN.
NOM.
MAX.
MIN.
MAX.
MAX.
MAX.
68
61
90
68
100
160
180
200
75
110
171
198
220
0.07
0.07
0.07
0.07
0.07
0.12
0.12
0.12
0.12
0.12
10
5
106
139
224
250
277
0.94
0.72
0.45
0.40
0.36
5
5
5
5
5
56
82
100
160
180
200
149
162
180
5
130
150
160
5
5
Notes
1. To complete the type number the suffix is added to the basic type number, e.g. BZD142W-68.
2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 µs pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IR = 0.1 mA
MIN.
700
TYP.
MAX.
UNIT
V(BR)R
reverse avalanche breakdown
voltage
−
−
V
IR
reverse current
VR = 600 V
−
−
−
−
−
5
µA
µA
pF
VR = 600 V; Tj = 150 °C
100
Cd
diode capacitance
f = 1 MHz; VR = 0 V;
see Fig.3
15
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4.
For more information please refer to the “General Part of associated Handbook”.
2001 Oct 10
3
Philips Semiconductors
Product specification
ZenBlockTM; zener with
integrated blocking diode
BZD142W
GRAPHICAL DATA
MBL106
MBL107
2
10
3.0
handbook, halfpage
handbook, halfpage
P
(W)
C
d
(pF)
2.0
10
1.0
0
1
1
2
3
10
10
10
0
40
80
120
160
200
V
(V)
R
T (°C)
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted (see Fig.4).
f = 1 MHz; Tj = 25 °C.
Fig.2 Maximum total power dissipation as a
function of temperature.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
I
handbook, halfpage
RSM
(%)
100
90
50
50
10
4.5
50
2.5
t
t
1
t
MGD521
2
1.25
MSB213
In accordance with “IEC 60060-1, Section 8”.
t1 = 10 µs.
t2 = 1000 µs.
Dimensions in mm.
Fig.5 Non-repetitive peak reverse current pulse
definition.
Fig.4 Printed-circuit board for surface mounting.
2001 Oct 10
4
Philips Semiconductors
Product specification
ZenBlockTM; zener with
integrated blocking diode
BZD142W
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors
SOD87
k
a
(2)
D
D
1
L
L
H
DIMENSIONS (mm are the original dimensions)
D1
L
D
H
UNIT
0
1
2 mm
scale
2.1
2.0
2.0
1.8
3.7
3.3
mm
0.3
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-03-31
99-06-04
SOD87
100H03
2001 Oct 10
5
Philips Semiconductors
Product specification
ZenBlockTM; zener with
integrated blocking diode
BZD142W
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Oct 10
6
Philips Semiconductors
Product specification
ZenBlockTM; zener with
integrated blocking diode
BZD142W
NOTES
2001 Oct 10
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613510/02/pp8
Date of release: 2001 Oct 10
Document order number: 9397 750 08603
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