BZD27-C16 [NXP]
Voltage regulator diodes; 稳压二极管
| 型号： | BZD27-C16 |
| 厂家： | 
NXP |
| 描述： | Voltage regulator diodes |
| 文件： | 总9页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
BZD27 series
Voltage regulator diodes
1996 Jun 10
Product specification
Supersedes data of October 1991
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass SOD87
package through Implotec
technology. This package is
(1)
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
k
a
handbook, 4 columns
• Zener working voltage range:
3.6 to 270 V for 46 types
MAM249
• Transient suppressor stand-off
voltage range: 6.2 to 430 V
for 45 types
Fig.1 Simplified outline (SOD87) and symbol.
• Supplied in 8 mm embossed tape.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Ptot
total power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
total power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
Ttp = 105 °C; see Figs 2 and 3
−
−
1.7
2.3
W
W
Ptot
PCB mounted (see Fig.7)
T
amb = 60 °C; see Fig.2
amb = 55 °C; see Fig.3
−
−
0.8
0.8
W
W
T
PZSM
non-repetitive peak reverse tp = 100 µs; square pulse;
power dissipation
Tj = 25 °C prior to surge; see Figs.4 and 5
BZD27-C3V6 to -C6V8
−
−
300
300
W
W
BZD27-C7V5 to -C510
PRSM
non-repetitive peak reverse 10/1000 µs exponential pulse (see Fig.8);
power dissipation
Tj = 25 °C prior to surge
BZD27-C7V5 to -C510
storage temperature
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
junction temperature
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
−
150
W
Tstg
−65
−65
+200
+175
°C
°C
Tj
−65
−65
+200
+175
°C
°C
1996 Jun 10
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 0.2 A; see Fig.6
MIN.
MAX.
UNIT
VF
−
1.2
V
Per type when used as voltage regulator diodes
Tj = 25 °C unless otherwise specified.
DIFFERENTIAL TEMPERATURE
TEST
REVERSE CURRENT
WORKING VOLTAGE
VZ (V) at IZ
TYPE
No.
RESISTANCE
COEFFICIENT CURRENT at REVERSE VOLTAGE
SUFFIX
rdif (Ω) at IZ
SZ (%/K) at IZ
IR (µA)
(1)
IZ (mA)
VR (V)
MIN.
NOM.
MAX.
TYP.
MAX.
MIN.
MAX.
MAX.
C3V6
C3V9
C4V3
C4V7
C5V1
C5V6
C6V2
C6V8
C7V5
C8V2
C9V1
C10
3.4
3.7
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
3.8
4.1
4
4
8
8
−0.14
−0.14
−0.12
−0.10
−0.08
−0.04
−0.01
0.00
0.00
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
−0.04
−0.04
−0.02
0.00
−0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
100
100
100
100
100
100
100
100
100
100
50
100
50
25
10
5
1
1
4.0
4.6
4
7
1
4.4
5.0
3
7
1
4.8
5.4
3
6
1
5.2
6.0
2
4
10
5
2
5.8
6.6
2
3
2
6.4
7.2
1
3
10
50
10
10
7
3
7.0
7.9
1
2
3
7.7
8.7
1
2
3
8.5
9.6
2
4
5
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
2
4
50
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
11
4
7
50
4
C11
12
4
7
50
3
C12
13
5
10
10
15
15
15
15
15
15
15
15
40
40
45
45
50
2
C13
15
5
50
1
C15
16
6
25
1
C16
18
6
25
1
C18
20
6
25
1
C20
22
6
25
1
C22
24
7
25
1
C24
27
7
25
1
C27
30
8
25
1
C30
31
33
35
8
25
1
C33
34
36
38
21
21
24
24
10
1
C36
37
39
41
10
1
C39
40
43
46
10
1
C43
44
47
50
10
1
C47
1996 Jun 10
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
DIFFERENTIAL TEMPERATURE
TEST
REVERSE CURRENT
WORKING VOLTAGE
VZ (V) at IZ
TYPE
No.
RESISTANCE
COEFFICIENT CURRENT at REVERSE VOLTAGE
SUFFIX
rdif (Ω) at IZ
SZ (%/K) at IZ
IR (µA)
(1)
IZ (mA)
VR (V)
MIN.
48
52
58
64
70
77
85
94
NOM.
51
MAX.
54
TYP.
25
MAX.
60
MIN.
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
MAX.
10
10
10
10
10
10
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
39
43
C51
56
60
25
60
C56
62
66
25
80
47
C62
68
72
25
80
51
C68
75
79
30
100
100
200
200
250
250
300
300
350
400
500
750
850
1000
56
C75
82
87
30
62
C82
91
96
60
68
C91
100
110
120
130
150
160
180
200
220
240
270
106
116
127
141
156
171
191
212
233
256
289
60
5
75
C100
C110
C120
C130
C150
C160
C180
C200
C220
C240
C270
104
80
5
82
114
124
138
153
168
188
208
228
251
80
5
91
110
130
150
180
200
350
400
450
5
100
110
120
130
150
160
180
200
5
5
5
5
2
2
2
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51.
1996 Jun 10
4
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
Per type when used as transient suppressor diodes
Tj = 25 °C unless otherwise specified.
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
REVERSE
TEMPERATURE
BREAKDOWN
COEFFICIENT
VOLTAGE
TEST
CURREN
T
CLAMPING
VOLTAGE
TYPE
NUMBER
V
(BR)R (V)
at Itest
at IRSM
(A)
note 1
SZ (%/K) at Itest
V(CL)R (V)
MAX.
IR (µA)
Itest
(mA)
at VR
(V)
MIN.
MIN.
MAX.
MAX.
BZD27-C7V5
BZD27-C8V2
BZD27-C9V1
BZD27-C10
BZD27-C11
BZD27-C12
BZD27-C13
BZD27-C15
BZD27-C16
BZD27-C18
BZD27-C20
BZD27-C22
BZD27-C24
BZD27-C27
BZD27-C30
BZD27-C33
BZD27-C36
BZD27-C39
BZD27-C43
BZD27-C47
BZD27-C51
BZD27-C56
BZD27-C62
BZD27-C68
BZD27-C75
BZD27-C82
BZD27-C91
BZD27-C100
BZD27-C110
BZD27-C120
BZD27-C130
BZD27-C150
BZD27-C160
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
0.00
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
11.3
12.3
13.3
14.8
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3.0
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
1.0
0.90
0.81
0.73
0.67
1500
1200
100
20
5
6.2
6.8
7.5
8.2
9.1
10
5
5
11
5
12
5
13
5
15
5
16
5
18
5
20
5
22
5
24
31
5
27
34
5
30
37
5
33
40
5
36
44
5
39
48
5
43
52
5
47
58
5
51
64
5
56
70
5
62
77
5
68
85
126
5
75
94
5
139
5
82
104
114
124
138
153
5
152
5
91
5
167
5
100
110
120
130
5
185
5
5
204
5
5
224
5
1996 Jun 10
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
REVERSE
BREAKDOWN
VOLTAGE
TEST
CURREN
T
TEMPERATURE
COEFFICIENT
CLAMPING
VOLTAGE
TYPE
NUMBER
V(BR)R (V)
at Itest
at IRSM
(A)
note 1
SZ (%/K) at Itest
V(CL)R (V)
MAX.
IR (µA)
Itest
(mA)
at VR
(V)
MIN.
MIN.
MAX.
MAX.
168
188
208
228
251
280
310
340
370
400
440
480
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
5
2
2
2
2
2
2
2
2
2
2
249
276
305
336
380
419
459
498
537
603
655
707
0.60
0.54
0.50
0.45
0.40
0.36
0.33
0.30
0.28
0.25
0.23
0.21
5
5
5
5
5
5
5
5
5
5
5
5
150
160
180
200
220
240
270
300
330
360
390
430
BZD27-C180
BZD27-C200
BZD27-C220
BZD27-C240
BZD27-C270
BZD27-C300
BZD27-C330
BZD27-C360
BZD27-C390
BZD27-C430
BZD27-C470
BZD27-C510
Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.8.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to tie-point
BZD27-C3V6 to -C6V8
55
30
K/W
K/W
BZD27-C7V5 to -C510
Rth j-a
thermal resistance from junction to ambient
BZD27-C3V6 to -C6V8
note 1
175
150
K/W
K/W
BZD27-C7V5 to -C510
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 10
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
GRAPHICAL DATA
MBH454
MBH455
3
3
handbook, halfpage
handbook, halfpage
P
P
tot
tot
(W)
(W)
2
2
1
0
1
0
0
0
100
200
100
200
T (°C)
T (°C)
Types BZD27-C3V6 to -C6V8
Types BZD27-C7V5 to -C510
Solid line: tie-point temperature.
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted as shown in Fig.7.
Dotted line: ambient temperature;
device mounted as shown in Fig.7.
Fig.2 Maximum total power dissipation as a
function of temperature.
Fig.3 Maximum total power dissipation as a
function of temperature.
MGD524
MGD525
4
10
400
handbook, halfpage
handbook, halfpage
P
ZSM
(W)
P
ZSM
(W)
300
3
2
10
200
100
0
10
10
10
−2
−1
10
1
10
0
3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8
(V)
t
(ms)
p
V
Znom
Tj = 25 °C prior to surge.
Tj = 25 °C prior to surge.
See also Fig 5.
Fig.4 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.5 Maximum non-repetitive peak reverse
power dissipation as a function of nominal
working voltage.
1996 Jun 10
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
MGD520
2
50
handbook, halfpage
I
F
(A)
4.5
1
50
2.5
1.25
MSB213
0
0
1
2
V
(V)
F
Tj = 25 °C.
Dimensions in mm.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Printed-circuit board for surface mounting.
I
handbook, halfpage
RSM
(%)
100
90
50
10
t
t
1
t
MGD521
2
In accordance with “IEC 60-1, Section 8”.
t1 = 10 µs.
t2 = 1000 µs.
Fig.8 Non-repetitive peak reverse current
pulse definition.
1996 Jun 10
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
PACKAGE OUTLINE
3.5 0.2
0.3
2.05
0.05
O D =
1.9
0.1
MBA505
D1 =
O
Dimensions in mm.
The marking band indicates the cathode.
Fig.9 SOD87.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 10
9
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