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BZG04-100 [NXP]

Transient voltage suppressor diodes; 瞬态电压抑制二极管
BZG04-100
型号： BZG04-100
厂家： NXP    NXP
描述：

Transient voltage suppressor diodes
瞬态电压抑制二极管

瞬态抑制器 二极管
文件： 总7页 (文件大小：35K)
中文：  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
handbook, halfpage  
68  
BZG04 series  
Transient voltage suppressor  
diodes  
1996 Sep 19  
Preliminary specification  
Supersedes data of 1996 Jun 10  
Philips Semiconductors  
Preliminary specification  
Transient voltage suppressor diodes  
BZG04 series  
The well-defined void-free case is of a  
transfer-moulded thermo-setting  
plastic.  
FEATURES  
DESCRIPTION  
• Glass passivated  
DO-214AC surface mountable  
package with glass passivated chip.  
• High maximum operating  
temperature  
• Low leakage current  
• Excellent stability  
cathode  
band  
handbook, 4 columns  
• UL 94V-O classified plastic  
k
a
package  
• Transient suppressor stand-off  
voltage range:  
8.2 to 220 V for 32 types  
Top view  
Side view  
MSA473  
• Shipped in 12 mm embossed tape.  
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
PRSM  
non-repetitive peak reverse power 10/1000 µs exponential pulse  
−
300  
W
dissipation  
(see Fig.4); Tj = 25 °C prior to  
surge; see also Fig.2  
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
−65  
+175  
+175  
°C  
°C  
1996 Sep 19  
2
Philips Semiconductors  
Preliminary specification  
Transient voltage suppressor diodes  
BZG04 series  
ELECTRICAL CHARACTERISTICS  
Total series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
VF  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 0.5 A; see Fig.3  
MIN.  
MAX.  
UNIT  
−
1.2  
V
Per type  
Tj = 25 °C unless otherwise specified.  
REVERSE  
BREAKDOWN  
VOLTAGE  
REVERSE CURRENT  
at STAND-OFF  
VOLTAGE  
TEMPERATURE  
COEFFICIENT  
TEST  
CURRENT  
CLAMPING  
VOLTAGE  
TYPE  
NUMBER  
V
(BR)R (V)  
at Itest  
SZ (%/K) at Itest  
V(CL)R (V)  
MAX.  
IR (µA)  
Itest  
(mA)  
at IRSM (A)  
note 1  
at VR  
(V)  
MIN.  
MIN.  
MAX.  
MAX.  
BZG04-8V2  
BZG04-9V1  
BZG04-10  
BZG04-11  
BZG04-12  
BZG04-13  
BZG04-15  
BZG04-16  
BZG04-18  
BZG04-20  
BZG04-22  
BZG04-24  
BZG04-27  
BZG04-30  
BZG04-33  
BZG04-36  
BZG04-39  
BZG04-43  
BZG04-47  
BZG04-51  
BZG04-56  
BZG04-62  
BZG04-68  
BZG04-75  
BZG04-82  
BZG04-91  
BZG04-100  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
0.09  
0.10  
0.10  
0.10  
0.10  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
50  
50  
50  
50  
50  
25  
25  
25  
25  
25  
25  
25  
25  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
14.8  
15.7  
17.0  
18.9  
20.9  
22.9  
25.6  
28.4  
31.0  
33.8  
38.1  
42.2  
46.2  
50.1  
54.1  
60.7  
65.5  
70.8  
78.6  
86.5  
94.4  
103.5  
114  
20.3  
19.1  
17.7  
15.9  
14.4  
13.1  
11.7  
10.6  
9.7  
20  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
82  
91  
100  
8.9  
7.9  
7.1  
31  
6.5  
34  
6.0  
37  
5.5  
40  
4.9  
44  
4.6  
48  
4.2  
52  
3.8  
58  
3.5  
64  
3.2  
70  
2.9  
77  
2.6  
85  
126  
2.4  
94  
5
139  
2.2  
104  
114  
5
152  
2.0  
5
167  
1.8  
1996 Sep 19  
3
Philips Semiconductors  
Preliminary specification  
Transient voltage suppressor diodes  
BZG04 series  
REVERSE  
TEMPERATURE  
BREAKDOWN  
COEFFICIENT  
VOLTAGE  
REVERSE CURRENT  
at STAND-OFF  
VOLTAGE  
TEST  
CURRENT  
CLAMPING  
VOLTAGE  
TYPE  
NUMBER  
V(BR)R (V)  
at Itest  
SZ (%/K) at Itest  
V(CL)R (V)  
IR (µA)  
Itest  
(mA)  
at IRSM (A)  
note 1  
at VR  
(V)  
MIN.  
124  
138  
153  
168  
188  
208  
228  
251  
MIN.  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
MAX.  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
MAX.  
185  
204  
224  
249  
276  
305  
336  
380  
MAX.  
5
5
5
5
5
2
2
2
1.6  
1.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
5
5
5
5
5
5
5
5
110  
120  
130  
150  
160  
180  
200  
220  
BZG04-110  
BZG04-120  
BZG04-130  
BZG04-150  
BZG04-160  
BZG04-180  
BZG04-200  
BZG04-220  
Note  
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
25  
UNIT  
K/W  
K/W  
K/W  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
note 1  
note 2  
100  
150  
Notes  
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.5.  
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.5.  
For more information please refer to the “General Part of associated Handbook”.  
1996 Sep 19  
4
Philips Semiconductors  
Preliminary specification  
Transient voltage suppressor diodes  
BZG04 series  
GRAPHICAL DATA  
MBH452  
MBH453  
4
10  
3
handbook, halfpage  
handbook, halfpage  
I
F
P
ZSM  
(A)  
(W)  
3
10  
2
2
10  
1
10  
10  
0
0
−2  
−1  
1
2
10  
1
t (ms) 10  
p
V (V)  
F
Tj = 25 °C prior to surge.  
Tj = 25 °C.  
Fig.2 Maximum non-repetitive peak reverse  
power dissipation as a function of pulse  
duration (square pulse).  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
I
handbook, halfpage  
RSM  
50  
(%)  
100  
90  
4.5  
50  
10  
50  
2.5  
t
t
1
1.25  
MSB213  
t
MGD521  
2
In accordance with “IEC 60-1, Section 8”.  
t1 = 10 µs.  
t2 = 1000 µs.  
Dimensions in mm.  
Fig.4 Non-repetitive peak reverse current pulse  
definition.  
Fig.5 Printed-circuit board for surface mounting.  
1996 Sep 19  
5
Philips Semiconductors  
Preliminary specification  
Transient voltage suppressor diodes  
BZG04 series  
PACKAGE OUTLINE  
5.5  
5.1  
4.5  
4.3  
2.3  
2.0  
0.05  
0.2  
3.3  
2.7  
MSA414  
2.8 1.6  
2.4 1.4  
Dimensions in mm.  
The marking band indicates the cathode.  
Fig.6 DO-214AC; SOD106.  
1996 Sep 19  
6
Philips Semiconductors  
Preliminary specification  
Transient voltage suppressor diodes  
BZG04 series  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Sep 19  
7

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