BZG04-12/T3 [NXP]

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC PACKAGE-2, Transient Suppressor;
BZG04-12/T3
型号: BZG04-12/T3
厂家: NXP    NXP
描述:

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC PACKAGE-2, Transient Suppressor

局域网 光电二极管 电视
文件: 总8页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
k, halfpage  
BZG04 series  
Transient voltage suppressor  
diodes  
Product specification  
2002 Jul 04  
Supersedes data of 1996 Sep 19  
Philips Semiconductors  
Product specification  
Transient voltage suppressor diodes  
BZG04 series  
FEATURES  
DESCRIPTION  
The well-defined void-free case is of a  
transfer-moulded thermo-setting  
plastic.  
Glass passivated  
DO-214AC surface mountable  
package with glass passivated chip.  
High maximum operating  
temperature  
Low leakage current  
Excellent stability  
cathode  
band  
handbook, 4 columns  
UL 94V-O classified plastic  
k
a
package  
Transient suppressor stand-off  
voltage range:  
8.2 to 220 V for 32 types  
Top view  
Side view  
MSA473  
Shipped in 12 mm embossed tape.  
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
PRSM  
non-repetitive peak reverse power 10/1000 µs exponential pulse (see  
300  
W
dissipation  
Fig.4); Tj = 25 °C prior to surge;  
see also Fig.2  
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175  
+175  
°C  
°C  
2002 Jul 04  
2
Philips Semiconductors  
Product specification  
Transient voltage suppressor diodes  
BZG04 series  
ELECTRICAL CHARACTERISTICS  
Total series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
VF  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 0.5 A; see Fig.3  
MIN.  
MAX.  
UNIT  
1.2  
V
Per type  
Tj = 25 °C unless otherwise specified.  
REVERSE  
BREAKDOWN  
VOLTAGE  
REVERSE CURRENT  
at STAND-OFF  
VOLTAGE  
TEMPERATURE  
COEFFICIENT  
TEST  
CURRENT  
CLAMPING VOLTAGE  
TYPE  
NUMBER  
V(BR)R (V)  
at Itest  
SZ (%/K) at Itest  
V(CL)R (V)  
MAX.  
IR (µA)  
Itest  
(mA)  
at IRSM (A)  
note 1  
at VR  
(V)  
MIN.  
MIN.  
MAX.  
MAX.  
BZG04-8V2  
BZG04-9V1  
BZG04-10  
BZG04-11  
BZG04-12  
BZG04-13  
BZG04-15  
BZG04-16  
BZG04-18  
BZG04-20  
BZG04-22  
BZG04-24  
BZG04-27  
BZG04-30  
BZG04-33  
BZG04-36  
BZG04-39  
BZG04-43  
BZG04-47  
BZG04-51  
BZG04-56  
BZG04-62  
BZG04-68  
BZG04-75  
BZG04-82  
BZG04-91  
BZG04-100  
BZG04-110  
BZG04-120  
BZG04-130  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.10  
0.10  
0.10  
0.10  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
50  
50  
50  
50  
50  
25  
25  
25  
25  
25  
25  
25  
25  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
14.8  
15.7  
17.0  
18.9  
20.9  
22.9  
25.6  
28.4  
31.0  
33.8  
38.1  
42.2  
46.2  
50.1  
54.1  
60.7  
65.5  
70.8  
78.6  
86.5  
94.4  
103.5  
114  
20.3  
19.1  
17.7  
15.9  
14.4  
13.1  
11.7  
10.6  
9.7  
20  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
8.9  
20  
7.9  
22  
7.1  
24  
31  
6.5  
27  
34  
6.0  
30  
37  
5.5  
33  
40  
4.9  
36  
44  
4.6  
39  
48  
4.2  
43  
52  
3.8  
47  
58  
3.5  
51  
64  
3.2  
56  
70  
2.9  
62  
77  
2.6  
68  
85  
126  
2.4  
75  
94  
5
139  
2.2  
82  
104  
114  
124  
138  
153  
5
152  
2.0  
91  
5
167  
1.8  
100  
110  
120  
130  
5
185  
1.6  
5
204  
1.5  
5
224  
1.3  
2002 Jul 04  
3
Philips Semiconductors  
Product specification  
Transient voltage suppressor diodes  
BZG04 series  
REVERSE  
TEMPERATURE  
BREAKDOWN  
COEFFICIENT  
VOLTAGE  
REVERSE CURRENT  
at STAND-OFF  
VOLTAGE  
TEST  
CURRENT  
CLAMPING VOLTAGE  
TYPE  
NUMBER  
V
(BR)R (V)  
at Itest  
SZ (%/K) at Itest  
V(CL)R (V)  
IR (µA)  
Itest  
(mA)  
at IRSM (A)  
note 1  
at VR  
(V)  
MIN.  
MIN.  
0.09  
0.09  
0.09  
0.09  
0.09  
MAX.  
0.13  
0.13  
0.13  
0.13  
0.13  
MAX.  
249  
MAX.  
BZG04-150  
BZG04-160  
BZG04-180  
BZG04-200  
BZG04-220  
168  
5
5
2
2
2
1.2  
1.1  
1.0  
0.9  
0.8  
5
5
5
5
5
150  
160  
180  
200  
220  
188  
208  
228  
251  
276  
305  
336  
380  
Note  
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
25  
100  
150  
K/W  
K/W  
K/W  
note 1  
note 2  
Notes  
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer 35 µm, see Fig.5.  
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.5.  
For more information please refer to the “General Part of associated Handbook”.  
2002 Jul 04  
4
Philips Semiconductors  
Product specification  
Transient voltage suppressor diodes  
BZG04 series  
GRAPHICAL DATA  
MBH452  
MBH453  
4
10  
3
handbook, halfpage  
handbook, halfpage  
I
F
P
ZSM  
(A)  
(W)  
3
10  
2
2
10  
1
10  
10  
0
0
2  
1  
1
2
10  
1
t (ms) 10  
p
V (V)  
F
Tj = 25 °C prior to surge.  
Tj = 25 °C.  
Fig.2 Maximum non-repetitive peak reverse  
power dissipation as a function of pulse  
duration (square pulse).  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
I
handbook, halfpage  
RSM  
50  
(%)  
100  
90  
4.5  
50  
10  
50  
2.5  
t
t
1
1.25  
MSB213  
t
MGD521  
2
In accordance with “IEC 60-1, Section 8”.  
t1 = 10 µs.  
t2 = 1000 µs.  
Dimensions in mm.  
Fig.4 Non-repetitive peak reverse current pulse  
definition.  
Fig.5 Printed-circuit board for surface mounting.  
2002 Jul 04  
5
Philips Semiconductors  
Product specification  
Transient voltage suppressor diodes  
BZG04 series  
PACKAGE OUTLINE  
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;  
2 connectors  
SOD106  
H
D
A
A
1
c
Q
E
b
(1)  
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
A
A
b
c
D
E
H
Q
1
1.6  
1.4  
2.3  
2.0  
4.5  
4.3  
2.8  
2.4  
5.5  
5.1  
3.3  
2.7  
mm  
0.05  
0.2  
Note  
1. The marking band indicates the cathode.  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
SOD106  
DO-214AC  
97-06-09  
2002 Jul 04  
6
Philips Semiconductors  
Product specification  
Transient voltage suppressor diodes  
BZG04 series  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2002 Jul 04  
7
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2002  
SCA74  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/04/pp8  
Date of release: 2002 Jul 04  
Document order number: 9397 750 09765  

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