BZT52H-B15,135 [NXP]
15V, 0.375W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-2;
| 型号： | BZT52H-B15,135 |
| 厂家： | 
NXP |
| 描述： | 15V, 0.375W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-2 测试 光电二极管 |
| 文件： | 总13页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT52H series
Single Zener diodes in a SOD123F package
Rev. 3 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Total power dissipation: ≤ 830 mW
Wide working voltage range: nominal
Low differential resistance
AEC-Q101 qualified
2.4 V to 75 V (E24 range)
Small plastic package suitable for
surface-mounted design
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
IF = 10 mA
Tamb ≤ 25 °C
Min
Typ
Max
0.9
Unit
V
[1]
[2]
[3]
VF
forward voltage
total power dissipation
-
-
-
-
-
-
Ptot
375
830
mW
mW
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Graphic symbol
[1]
2
anode
1
2
2
1
006aaa152
[1] The marking bar indicates the cathode.
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
plastic surface-mounted package; 2 leads
Version
BZT52H-B2V4 to
BZT52H-C75[1]
SOD123F
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Type number
Marking
code
Type number
Marking
code
Type number
Marking
code
Type number
Marking
code
BZT52H-B2V4
BZT52H-B2V7
BZT52H-B3V0
BZT52H-B3V3
BZT52H-B3V6
BZT52H-B3V9
BZT52H-B4V3
BZT52H-B4V7
BZT52H-B5V1
BZT52H-B5V6
BZT52H-B6V2
BZT52H-B6V8
BZT52H-B7V5
BZT52H-B8V2
BZT52H-B9V1
BZT52H-B10
BZT52H-B11
DC
DD
DE
DF
DG
DH
DJ
BZT52H-B15
BZT52H-B16
BZT52H-B18
BZT52H-B20
BZT52H-B22
BZT52H-B24
BZT52H-B27
BZT52H-B30
BZT52H-B33
BZT52H-B36
BZT52H-B39
BZT52H-B43
BZT52H-B47
BZT52H-B51
BZT52H-B56
BZT52H-B62
BZT52H-B68
BZT52H-B75
-
DX
DY
DZ
E1
E2
E3
E4
E5
E6
E7
E8
E9
EA
EB
EC
ED
EE
EF
-
BZT52H-C2V4 B3
BZT52H-C2V7 B4
BZT52H-C3V0 B5
BZT52H-C3V3 B6
BZT52H-C3V6 B7
BZT52H-C3V9 B8
BZT52H-C4V3 B9
BZT52H-C4V7 BA
BZT52H-C5V1 BB
BZT52H-C5V6 BC
BZT52H-C6V2 BD
BZT52H-C6V8 BE
BZT52H-C7V5 BF
BZT52H-C8V2 BG
BZT52H-C9V1 BH
BZT52H-C15
BZT52H-C16
BZT52H-C18
BZT52H-C20
BZT52H-C22
BZT52H-C24
BZT52H-C27
BZT52H-C30
BZT52H-C33
BZT52H-C36
BZT52H-C39
BZT52H-C43
BZT52H-C47
BZT52H-C51
BZT52H-C56
BZT52H-C62
BZT52H-C68
BZT52H-C75
-
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
C1
C2
C3
C4
C5
C6
-
DK
DL
DM
DN
DP
DQ
DR
DS
DT
DU
DV
DW
BZT52H-C10
BZT52H-C11
BZT52H-C12
BZT52H-C13
BJ
BK
BL
BM
BZT52H-B12
BZT52H-B13
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
2 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
IF
forward current
-
-
250
mA
IZSM
non-repetitive peak
reverse current
see
Table 8,9
and 10
[1]
PZSM
Ptot
non-repetitive peak
reverse power dissipation
-
40
W
[2]
[3]
total power dissipation
Tamb ≤ 25 °C
-
375
mW
mW
°C
-
830
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
330
150
70
Unit
K/W
K/W
K/W
[1]
[2]
[3]
Rth(j-a)
thermal resistance from in free air
junction to ambient
-
-
-
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
3 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions
IF = 10 mA
Min
Typ
Max
Unit
[1]
VF
forward voltage
-
-
0.9
V
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Table 8.
Characteristics per type; BZT52H-B2V4 to BZT52H-C24
Tj = 25 °C unless otherwise specified.
BZT52H Sel Working Maximum differential Reverse
Temperature Diode
Non-repetitive
-xxx
voltage
VZ (V);
IZ = 5 mA
resistance rdif (Ω)
current IR (μA) coefficient
SZ (mV/K);
capacitance peak reverse
Cd (pF)[1]
current
IZSM (A)[2]
IZ = 5 mA
Min
2.35 2.45 400
2.2 2.6
2.65 2.75 500
2.5 2.9
2.94 3.06 500
2.8 3.2
3.23 3.37 500
3.1 3.5
3.53 3.67 500
3.4 3.8
3.82 3.98 500
3.7 4.1
4.21 4.39 500
4.0 4.6
4.61 4.79 500
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
Max
Max
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
85
83
95
95
95
95
95
78
60
40
10
8
50
20
10
5
1
1
1
1
1
1
1
2
2
2
4
4
5
5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
0.0
450
6.0
0.0
0.0
0.0
0.0
0.0
0.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
450
450
450
450
450
450
300
300
300
200
200
150
150
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
5
3
3
3
4.4
5.0
4.8
5.0
5.2
5.4
480
2
5.49 5.71 400
5.2 6.0
6.08 6.32 150
5.8 6.6
6.66 6.94 80
6.4 7.2
7.35 7.65 80
7.0 7.9
8.04 8.36 80
7.7 8.7
1
3
2
1.2
10
10
1
2.5
0.7
3.2
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
4 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
Table 8.
Characteristics per type; BZT52H-B2V4 to BZT52H-C24 …continued
Tj = 25 °C unless otherwise specified.
BZT52H Sel Working
Maximum differential Reverse
Temperature Diode
Non-repetitive
-xxx
voltage
VZ (V);
IZ = 5 mA
resistance rdif (Ω)
current IR (μA) coefficient
SZ (mV/K);
capacitance peak reverse
Cd (pF)[1]
current
IZSM (A)[2]
IZ = 5 mA
Min
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
Max
Max
9V1
10
11
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
8.92 9.28 100
10
10
10
10
10
15
20
20
20
25
30
0.5
6
3.8
7.0
150
3.0
8.5
9.8
9.4
9.6
10.2 70
10.6
0.2
7
4.5
8.0
90
85
85
80
75
75
70
60
60
55
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
10.8 11.2 70
10.4 11.6
0.1
8
5.4
9.0
12
13
15
16
18
20
22
24
11.8 12.2 90
11.4 12.7
0.1
8
6.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
12.7 13.3 110
12.4 14.1
0.1
8
7.0
14.7 15.3 110
13.8 15.6
0.05
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
14
9.2
15.7 16.3 170
15.3 17.1
10.4
12.4
14.4
16.4
18.4
17.6 18.4 170
16.8 19.1
19.6 20.4 220
18.8 21.2
21.6 22.4 220
20.8 23.3
15.4
16.8
23.5 24.5 220
22.8 25.6
[1] f = 1 MHz; VR = 0 V.
[2] tp = 100 μs; Tamb = 25 °C.
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
5 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
Table 9.
Characteristics per type; BZT52H-B27 to BZT52H-C51
Tj = 25 °C unless otherwise specified.
BZT52H Sel Working
Maximum differential Reverse
Temperature Diode
Non-repetitive
-xxx
voltage
VZ (V);
IZ = 2 mA
resistance rdif (Ω)
current IR (μA) coefficient
SZ (mV/K);
capacitance peak reverse
Cd (pF)[1]
current
IZSM (A)[2]
IZ = 5 mA
Min
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
Max
Max
27
30
33
36
39
43
47
51
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
26.5 27.5 250
25.1 28.9
40
40
40
60
75
80
90
100
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
25.3
50
1.0
29.4 30.6 250
28.0 32.0
21
29.4
33.4
37.4
41.2
46.6
51.8
57.2
50
45
45
45
40
40
40
1.0
0.9
0.8
0.7
0.6
0.5
0.4
32.3 33.7 250
31.0 35.0
23.1
25.2
27.3
30.1
32.9
35.7
35.3 36.7 250
34.0 38.0
38.2 39.8 300
37.0 41.0
42.1 43.9 325
40.0 46.0
46.1 47.9 325
44.0 50.0
50.0 52.0 350
48.0 54.0
[1] f = 1 MHz; VR = 0 V.
[2] tp = 100 μs; Tamb = 25 °C.
Table 10. Characteristics per type; BZT52H-B56 to BZT52H-C75
Tj = 25 °C unless otherwise specified.
BZT52H Sel Working
Maximum differential Reverse
Temperature Diode
Non-repetitive
-xxx
voltage
VZ (V);
IZ = 2 mA
resistance rdif (Ω) current IR (μA) coefficient
capacitance peak reverse
SZ (mV/K);
IZ = 5 mA
Cd (pF)[1]
current
IZSM (A)[2]
Min
Max IZ = 0.5 mA IZ = 2 mA Max
VR (V) Min
Max
Max
Max
56
62
68
75
B
C
B
C
B
C
B
C
54.9 57.1 375
52.0 60.0
120
140
160
175
0.05
0.05
0.05
0.05
39.2
43.4
47.6
52.5
52.2
58.8
65.6
73.4
63.8
71.6
79.8
88.6
40
0.3
60.8 63.2 400
58.0 66.0
35
35
35
0.3
66.6 69.4 400
64.0 72.0
0.25
0.20
73.5 76.5 400
70.0 79.0
[1] f = 1 MHz; VR = 0 V.
[2] tp = 100 μs; Tamb = 25 °C.
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
6 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
mbg801
mbg781
3
10
300
P
I
F
ZSM
(W)
(mA)
2
200
10
(1)
(2)
10
100
1
10
0
0.6
−1
0.8
1
1
10
t
p
(ms)
V
F
(V)
(1) Tj = 25 °C (prior to surge)
(2) Tj = 150 °C (prior to surge)
Tj = 25 °C
Fig 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 2. Forward current as a function of forward
voltage; typical values
mbg782
mbg783
10
0
12
S
S
Z
(mV/K)
Z
11
4V3
(mV/K)
10
9V1
5
−1
3V9
8V2
7V5
3V6
6V8
6V2
5V6
5V1
0
−2
−3
3V3
4V7
3V0
2V4
2V7
−5
0
4
8
12
16
20
0
20
40
60
I
Z
(mA)
I
(mA)
Z
BZT52H-B/C2V4 to BZT52H-B/C4V3
BZT52H-B/C4V7 to BZT52H-B/C12
Tj = 25 °C to 150 °C
Tj = 25 °C to 150 °C
Fig 3. Temperature coefficient as a function of
working current; typical values
Fig 4. Temperature coefficient as a function of
working current; typical values
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
7 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
1.7
1.5
1.2
1.0
1
0.55
0.35
3.6 2.7
3.4 2.5
2
0.70
0.55
0.25
0.10
Dimensions in mm
04-11-29
Fig 5. Package outline SOD123F
10. Packing information
Table 11. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
-115
10000
BZT52H-B2V4 to SOD123F 4 mm pitch, 8 mm tape and reel
BZT52H-C75
-135
[1] For further information and the availability of packing methods, see Section 14.
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
8 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
11. Soldering
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm.
Fig 6. Reflow soldering footprint SOD123F
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
9 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
12. Revision history
Table 12. Revision history
Document ID
BZT52H_SER v.3
Modifications:
Release date
20101207
Data sheet status
Change notice
Supersedes
Product data sheet
-
BZT52H_SER v.2
• Added selection B.
• Section 1.2 “Features and benefits”: amended.
• Table 2 “Pinning”: graphic symbol updated.
• Section 8 “Test information”: added.
• Section 13 “Legal information”: updated.
BZT52H_SER v.2
BZT52H_SER v.1
20091115
Product data sheet
-
-
BZT52H_SER v.1
-
20051222
Product data sheet
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
10 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
11 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
12 of 13
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 December 2010
Document identifier: BZT52H_SER
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