BZV49 [NXP]
Voltage regulator diodes; 稳压二极管
| 型号： | BZV49 |
| 厂家： | 
NXP |
| 描述： | Voltage regulator diodes |
| 文件： | 总10页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZV49 series
Voltage regulator diodes
Product specification
2005 Feb 03
Supersedes data of 1999 May 11
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
FEATURES
PINNING
PIN
• Total power dissipation: max. 1 W
DESCRIPTION
• Tolerance series: approx. ±5%
1
2
3
anode
cathode
anode
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
• General regulation functions.
1
3
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89
plastic SMD package.
2
sym096
3
2
1
The diodes are available in the normalized E24 approx.
±5% tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V (BZV49-C2V4
to BZV49-C75).
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
DESCRIPTION
TYPE NUMBER
NAME
VERSION
BZV49-C2V4 to
BZV49-C75
note 1
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
Note
1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZV49-C2V4
BZV49-C2V7
BZV49-C3V0
BZV49-C3Y3
BZV49-C3V6
BZV49-C3V9
BZV49-C4V3
BZV49-C4V7
BZV49-C5V1
BZV49-C5V6
2Y4
2Y7
3Y0
3Y3
3Y6
3Y9
4Y3
4Y7
5Y1
5Y6
BZV49-C6V2
BZV49-C6V8
BZV49-C7V5
BZV49-C8V2
BZV49-C9V1
BZV49-C10
BZV49-C11
BZV49-C12
BZV49-C13
BZV49-C15
6Y2
6Y8
7Y5
8Y2
9Y1
10Y
11Y
12Y
13Y
15Y
BZV49-C16
BZV49-C18
BZV49-C20
BZV49-C22
BZV49-C24
BZV49-C27
BZV49-C30
BZV49-C33
BZV49-C36
BZV49-C39
16Y
18Y
20Y
22Y
24Y
27Y
30Y
33Y
36Y
39Y
BZV49-C43
BZV49-C47
BZV49-C51
BZV49-C56
BZV49-C62
BZV49-C68
BZV49-C75
−
43Y
47Y
51Y
56Y
62Y
68Y
75Y
−
−
−
−
−
2005 Feb 03
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
IF
PARAMETER
CONDITIONS
MIN.
MAX.
250
UNIT
mA
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
−
1
W
W
PZSM
non-repetitive peak reverse power tp = 100 µs; square wave;
40
dissipation
Tj = 25 °C prior to surge; see Fig.2
Tstg
Tj
storage temperature
junction temperature
−65
+150
150
°C
°C
−
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 50 mA; see Fig.3
1
V
2005 Feb 03
3
Per type
Tj = 25 °C unless otherwise specified.
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
dif (Ω)
at IZtest
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
Ztest (mA) at f = 1 MHz;
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
r
I
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
BZV49-
CXXX
at IZtest
at VR = 0 V
IR (µA)
VR
(V)
MIN. MAX.
TYP.
70
75
80
85
85
85
80
50
40
15
6
MAX.
MIN. TYP. MAX.
MAX.
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
MAX.
MAX.
6.0
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.2
2.5
2.6
2.9
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
−3.5 −1.6
−3.5 −2.0
−3.5 −2.1
−3.5 −2.4
−3.5 −2.4
−3.5 −2.5
−3.5 −2.5
0
0
0
0
0
0
0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
50
20
10
5
1.0
1.0
6.0
2.8
3.2
1.0
6.0
3.1
3.5
1.0
6.0
3.4
3.8
5
1.0
6.0
3.7
4.1
3
1.0
6.0
4.0
4.6
3
1.0
6.0
4.4
5.0
−3.5 −1.4 +0.2
−2.7 −0.8 +1.2
−2.0 +1.2 +2.5
3
2.0
6.0
4.8
5.4
2
2.0
6.0
5.2
6.0
1
2.0
6.0
5.8
6.6
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
2.3
3.0
4.0
4.6
5.5
6.4
7.4
3.7
4.5
5.3
6.2
7.0
8.0
9.0
3
4.0
6.0
6.4
7.2
6
2
4.0
6.0
7.0
7.9
6
1
5.0
4.0
7.7
8.7
6
0.7
5.0
4.0
8.5
9.6
6
0.5
6.0
3.0
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
8
0.2
7.0
3.0
11
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
10
10
10
10
10
10
15
20
25
85
0.1
8.0
2.5
12
8.4 10.0
9.4 11.0
85
0.1
8.0
2.5
13
80
0.1
8.0
2.5
15
9.2 11.4 13.0
10.4 12.4 14.0
12.4 14.4 16.0
14.4 16.4 18.0
16.4 18.4 20.0
18.4 20.4 22.0
75
0.05
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
14.0
15.4
16.8
2.0
16
75
1.5
18
70
1.5
20
60
1.5
22
60
1.25
1.25
24
55
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
BZV49-
CXXX
at IZtest
at IZtest
at tp = 100 µs;
Tamb = 25 °C
IR (µA)
VR
(V)
MIN. MAX.
TYP.
MAX.
MIN. TYP. MAX.
MAX.
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
25
30
35
35
40
45
50
60
70
80
90
95
80
80
21.4 23.4 25.3
24.4 26.6 29.4
27.4 29.7 33.4
30.4 33.0 37.4
33.4 36.4 41.2
37.6 41.2 46.6
42.0 46.1 51.8
46.6 51.0 57.2
52.2 57.0 63.8
58.8 64.4 71.6
65.6 71.7 79.8
73.4 80.2 88.6
2
2
2
2
2
2
2
2
2
2
2
2
50
50
45
45
45
40
40
40
40
35
35
35
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
80
90
130
150
170
180
200
215
240
255
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-tp)
Rth(j-a)
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
15
K/W
K/W
note 1
125
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
GRAPHICAL DATA
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
200
10
(1)
(2)
10
100
0
0.6
1
10
0.8
1
−1
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.3 Forward current as a function of forward
voltage; typical values.
2005 Feb 03
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
MBG927
1
4V3
S
Z
(mV/K)
3V9
3V6
3V3
3V0
0
−1
−2
−3
2V7
2V4
-3
-2
-1
10
10
10
1
I
(A)
Z
BZV49-C2V4 to C4V3.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of working current; typical values.
MBG924
10
handbook, halfpage
S
Z
(mV/K)
10
9V1
5
8V2
7V5
6V8
6V2
5V6
5V1
0
4V7
−5
0
4
8
12
16
20
I
(mA)
Z
BZV49-C4V7 to C10.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
2005 Feb 03
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-09-13
04-08-03
SOT89
TO-243
SC-62
2005 Feb 03
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2005 Feb 03
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2005
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp10
Date of release: 2005 Feb 03
Document order number: 9397 750 13926
相关型号：
BZV49-C10T/R
DIODE 10 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, Voltage Regulator Diode
NXP
©2020 ICPDF网 联系我们和版权申明