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BZX384-B11 [NXP]

Voltage regulator diodes; 稳压二极管
BZX384-B11
型号： BZX384-B11
厂家： NXP    NXP
描述：

Voltage regulator diodes
稳压二极管

稳压二极管
文件： 总11页 (文件大小：72K)
中文：  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BZX384 series  
Voltage regulator diodes  
Product specification  
2004 Mar 22  
Supersedes data of 2003 Apr 01  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX384 series  
FEATURES  
PINNING  
• Total power dissipation: max. 300 mW  
PIN  
DESCRIPTION  
• Two tolerance series: ±2% and approx. ±5%  
• Working voltage range: nominal 2.4 to 75 V (E24 range)  
1
2
cathode  
anode  
• Non-repetitive peak reverse power dissipation:  
max. 40 W.  
APPLICATIONS  
handbook, halfpage  
1
2
• General regulation functions.  
DESCRIPTION  
Top view  
MAM387  
Low-power voltage regulator diodes encapsulated in a  
very small SOD323 (SC-76) plastic SMD package.  
The marking bar indicates the cathode.  
The diodes are available in the normalized E24 ±2%  
(BZX384-B) and approx. ±5% (BZX384-C) tolerance  
range. The series consists of 37 types with nominal  
working voltages from 2.4 to 75 V.  
Fig.1 Simplified outline (SOD323; SC-76) and  
symbol.  
2004 Mar 22  
2
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX384 series  
MARKING  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
Marking codes for BZX384-B2V4 to BZX384-B75  
BZX384-B2V4 K1  
BZX384-B2V7 K2  
BZX384-B3V0 K3  
BZX384-B3V3 K4  
BZX384-B3V6 K5  
BZX384-B3V9 K6  
BZX384-B4V3 K7  
BZX384-B4V7 K8  
BZX384-B5V1 K9  
BZX384-B5V6 L1  
BZX384-B6V2 L2  
BZX384-B6V8 L3  
BZX384-B7V5 L4  
BZX384-B8V2 L5  
BZX384-B9V1 L6  
BZX384-B16  
BZX384-B18  
BZX384-B20  
BZX384-B22  
BZX384-B24  
BZX384-B27  
BZX384-B30  
BZX384-B33  
BZX384-B36  
BZX384-B39  
M3  
M4  
M5  
M6  
M7  
M8  
M9  
N0  
N1  
N2  
BZX384-B43  
BZX384-B47  
BZX384-B51  
BZX384-B56  
BZX384-B62  
BZX384-B68  
BZX384-B75  
N3  
N4  
N5  
N6  
N7  
N8  
N9  
BZX384-B10  
BZX384-B11  
BZX384-B12  
BZX384-B13  
BZX384-B15  
L7  
L8  
L9  
M1  
M2  
Marking codes for BZX384-C2V4 to BZX384-C75  
BZX384-C2V4 T3  
BZX384-C2V7 T4  
BZX384-C3V0 T5  
BZX384-C3V3 T6  
BZX384-C3V6 T7  
BZX384-C3V9 T8  
BZX384-C4V3 T9  
BZX384-C4V7 T0  
BZX384-C5V1 D5  
BZX384-C5V6 D6  
BZX384-C6V2 T1  
BZX384-C6V8 D7  
BZX384-C7V5 D8  
BZX384-C8V2 D9  
BZX384-C9V1 D0  
BZX384-C16  
BZX384-C18  
BZX384-C20  
BZX384-C22  
BZX384-C24  
BZX384-C27  
BZX384-C30  
BZX384-C33  
BZX384-C36  
BZX384-C39  
DE  
DF  
DG  
DH  
DJ  
BZX384-C43  
BZX384-C47  
BZX384-C51  
BZX384-C56  
BZX384-C62  
BZX384-C68  
BZX384-C75  
DR  
DS  
DT  
DU  
DV  
DW  
DX  
BZX384-C10  
BZX384-C11  
BZX384-C12  
BZX384-C13  
BZX384-C15  
T2  
DK  
DL  
DM  
DN  
DP  
DA  
DB  
DC  
DD  
ORDERING INFORMATION  
TYPE  
PACKAGE  
NUMBER  
NAME  
DESCRIPTION  
VERSION  
BZX384-B2V4  
to  
−
plastic surface mounted package; 2 leads  
SOD323  
BZX384-B75  
BZX384-C2V4  
to  
BZX384-C75  
2004 Mar 22  
3
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX384 series  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
250  
see Tables 1 and 2  
UNIT  
mA  
IF  
continuous forward current  
−
IZSM  
non-repetitive peak reverse current tp = 100 µs; square wave;  
Tamb = 25 °C; prior to surge  
A
PZSM  
non-repetitive peak reverse power  
dissipation  
tp = 100 µs; square wave;  
amb = 25 °C; prior to surge  
Tamb = 25 °C; note 1  
−
40  
W
T
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
−
300  
mW  
°C  
−65  
−65  
+150  
+150  
°C  
Note  
1. Refer to SOD323 standard mounting conditions.  
CHARACTERISTICS  
Total BZX384-B and C series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MAX.  
UNIT  
VF  
IR  
IF = 10 mA; see Fig.3  
IF = 100 mA; see Fig.3  
0.9  
1.1  
V
V
reverse current;  
BZX384-B/C2V4  
BZX384-B/C2V7  
BZX384-B/C3V0  
BZX384-B/C3V3  
BZX384-B/C3V6  
BZX384-B/C3V9  
BZX384-B/C4V3  
BZX384-B/C4V7  
BZX384-B/C5V1  
BZX384-B/C5V6  
BZX384-B/C6V2  
BZX384-B/C6V8  
BZX384-B/C7V5  
BZX384-B/C8V2  
BZX384-B/C9V1  
BZX384-B/C10  
BZX384-B/C11  
BZX384-B/C12  
BZX384-B/C13  
BZX384-B/C15 to 75  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 2 V  
VR = 2 V  
VR = 2 V  
VR = 4 V  
VR = 4 V  
VR = 5 V  
VR = 5 V  
VR = 6 V  
VR = 7 V  
VR = 8 V  
VR = 8 V  
VR = 8 V  
VR = 0.7VZnom  
50  
20  
10  
5
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
5
3
3
3
2
1
3
2
1
700  
500  
200  
100  
100  
100  
50  
2004 Mar 22  
4
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Table 1 Per type BZX384-B/C2V4 to B/C24  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE VZ (V)  
at IZtest = 5 mA  
DIFFERENTIAL RESISTANCE  
NON-REPETITIVE  
PEAK REVERSE  
CURRENT IZSM (A)  
at tp = 100 µs;  
TEMPERATURE  
COEFFICIENTSZ (mV/K)  
at IZtest = 5 mA  
DIODE CAP.  
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
rdif (Ω)  
BZX-  
Bxxx  
Cxxx  
Tol. ±2% (B)  
Tol. ±5% (C)  
at IZtest = 1 mA at IZtest = 5 mA  
(see Figs 4 and 5)  
Tamb = 25 ˚C  
MIN. MAX. MIN. MAX.  
TYP.  
275  
MAX.  
600  
TYP.  
70  
MAX.  
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
55  
70  
MIN.  
−3.5  
TYP.  
−1.6  
MAX.  
MAX.  
MAX.  
2V4  
2.35  
2.65  
2.94  
3.23  
3.53  
3.82  
4.21  
4.61  
5.00  
5.49  
6.08  
6.66  
7.35  
8.04  
8.92  
9.80  
2.45  
2.75  
3.06  
3.37  
3.67  
3.98  
4.39  
4.79  
5.20  
5.71  
6.32  
6.94  
7.65  
8.36  
9.28  
2.2  
2.5  
2.8  
3.1  
3.4  
3.7  
4.0  
4.4  
4.8  
5.2  
5.8  
6.4  
7.0  
7.7  
8.5  
2.6  
0
450  
6.0  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
2.9  
300  
325  
350  
375  
400  
410  
425  
400  
80  
600  
600  
600  
600  
600  
600  
500  
480  
400  
150  
80  
75  
80  
85  
85  
85  
80  
50  
40  
15  
6
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−2.7  
−2.0  
0.4  
−2.0  
−2.1  
−2.4  
−2.4  
−2.5  
−2.5  
−1.4  
−0.8  
1.2  
0
450  
450  
450  
450  
450  
450  
300  
300  
300  
200  
200  
150  
150  
150  
90  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
1.5  
1.5  
1.5  
1.25  
1.25  
3.2  
0
3.5  
0
3.8  
0
4.1  
0
4.6  
0
5.0  
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
10.0  
11.0  
13.0  
14.0  
16.0  
18.0  
20.0  
22.0  
5.4  
6.0  
6.6  
40  
2.3  
7.2  
30  
6
1.2  
3.0  
7.9  
30  
80  
6
2.5  
4.0  
8.7  
40  
80  
6
3.2  
4.6  
9.6  
40  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
6
3.8  
5.5  
10.20 9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
50  
8
4.5  
6.4  
11  
10.80 11.20 10.4  
11.80 12.20 11.4  
12.70 13.30 12.4  
14.70 15.30 13.8  
15.70 16.30 15.3  
17.60 18.40 16.8  
19.60 20.40 18.8  
21.60 22.40 20.8  
23.50 24.50 22.8  
50  
10  
10  
10  
10  
10  
10  
15  
20  
25  
5.4  
7.4  
85  
12  
50  
6.0  
8.4  
85  
13  
50  
7.0  
9.4  
80  
15  
50  
9.2  
11.4  
12.4  
14.4  
16.4  
18.4  
20.4  
75  
16  
50  
10.4  
12.4  
14.4  
16.4  
18.4  
75  
18  
50  
70  
20  
60  
60  
22  
60  
60  
24  
60  
55  
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Table 2 Per type BZX384-B/C27 to B/C75  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE VZ (V)  
at IZtest = 2 mA  
DIFFERENTIAL RESISTANCE  
NON-REPETITIVE  
PEAK REVERSE  
CURRENT IZSM (A)  
at tp = 100 µs;  
TEMPERATURE  
COEFFICIENTSZ (mV/K)  
at IZtest = 2 mA  
DIODE CAP.  
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
rdif (Ω)  
BZX-  
Bxxx  
Cxxx  
Tol. ±2% (B)  
Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA  
(see Figs 4 and 5)  
Tamb = 25 ˚C  
MIN. MAX. MIN. MAX.  
TYP.  
65  
MAX.  
300  
TYP.  
25  
MAX.  
80  
MIN.  
21.4  
TYP.  
23.4  
MAX.  
25.3  
29.4  
33.4  
37.4  
41.2  
46.6  
51.8  
57.2  
63.8  
71.6  
79.8  
88.6  
MAX.  
MAX.  
27  
26.50 27.50 25.1  
29.40 30.60 28.0  
32.30 33.70 31.0  
35.30 36.70 34.0  
38.20 39.80 37.0  
42.10 43.90 40.0  
46.10 47.90 44.0  
50.00 52.00 48.0  
54.90 57.10 52.0  
60.80 63.20 58.0  
66.60 69.40 64.0  
73.50 76.50 70.0  
28.9  
32.0  
35.0  
38.0  
41.0  
46.0  
50.0  
54.0  
60.0  
66.0  
72.0  
79.0  
50  
1.0  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
70  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
30  
35  
35  
40  
45  
50  
60  
70  
80  
90  
95  
80  
24.4  
27.4  
30.4  
33.4  
37.6  
42.0  
46.6  
52.2  
58.8  
65.6  
73.4  
26.6  
29.7  
33.0  
36.4  
41.2  
46.1  
51.0  
57.0  
64.4  
71.7  
80.2  
50  
45  
45  
45  
40  
40  
40  
40  
35  
35  
35  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.3  
0.25  
0.2  
75  
80  
80  
90  
80  
130  
150  
170  
180  
200  
215  
240  
255  
85  
85  
90  
100  
120  
150  
170  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX384 series  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth(j-a)  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
thermal resistance from junction  
to ambient  
note 1  
note 2  
415  
K/W  
Rth(j-s)  
thermal resistance from junction  
to soldering point  
110  
K/W  
Notes  
1. Device mounted on an FR4 printed-circuit board.  
2. Soldering point of the cathode tab.  
2004 Mar 22  
7
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX384 series  
GRAPHICAL DATA  
MBG801  
MBG781  
3
10  
300  
handbook, halfpage  
handbook, halfpage  
I
P
F
ZSM  
(mA)  
(W)  
2
200  
10  
(1)  
10  
100  
(2)  
0
0.6  
1
10  
0.8  
1
−1  
1
duration (ms)  
10  
V
(V)  
F
(1) Tj = 25 °C (prior to surge).  
(2) Tj = 150 °C (prior to surge).  
Tj = 25 °C.  
Fig.2 Maximum permissible non-repetitive peak  
reverse power dissipation versus duration.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
MBG783  
MBG782  
0
10  
handbook, halfpage  
handbook, halfpage  
12  
S
Z
(mV/K)  
S
Z
11  
4V3  
(mV/K)  
10  
9V1  
−1  
5
3V9  
8V2  
7V5  
6V8  
3V6  
6V2  
5V6  
5V1  
−2  
0
3V3  
4V7  
3V0  
2V4  
2V7  
−3  
−5  
0
20  
40  
60  
0
4
8
12  
16  
20  
I
(mA)  
Z
I
(mA)  
Z
BZX384-B/C2V4 to B/C4V3.  
BZX384-B/C4V7 to B/C12.  
Tj = 25 to 150 °C.  
Tj = 25 to 150 °C.  
Fig.4 Temperature coefficient as a function of  
working current; typical values.  
Fig.5 Temperature coefficient as a function of  
working current; typical values.  
2004 Mar 22  
8
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX384 series  
PACKAGE OUTLINE  
Plastic surface mounted package; 2 leads  
SOD323  
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)  
c
L
p
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
mm  
b
c
D
E
H
L
p
Q
v
A
p
D
max  
1.1  
0.8  
0.40 0.25  
0.25 0.10  
1.8  
1.6  
1.35  
1.15  
2.7  
2.3  
0.45 0.25  
0.15 0.15  
0.05  
0.2  
Note  
1. The marking bar indicates the cathode  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
99-09-13  
03-12-17  
SOD323  
SC-76  
2004 Mar 22  
9
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX384 series  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Mar 22  
10  
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R76/02/pp11  
Date of release: 2004 Mar 22  
Document order number: 9397 750 12616  

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