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BZX55-20 [NXP]

Voltage regulator diodes; 稳压二极管
BZX55-20
型号： BZX55-20
厂家： NXP    NXP
描述：

Voltage regulator diodes
稳压二极管

稳压二极管
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BZX55 series  
Voltage regulator diodes  
1996 Apr 26  
Product specification  
Supersedes data of April 1992  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX55 series  
FEATURES  
DESCRIPTION  
Low-power voltage regulator diodes in hermetically sealed leaded glass  
• Total power dissipation:  
max. 500 mW  
SOD27 (DO-35) packages.  
• Tolerance series: ±5%  
The diodes are available in the normalized E24 ±5% tolerance range.  
The series consists of 37 types with nominal working voltages from 2.4 to 75 V  
(BZX55-C2V4 to BZX55-C75).  
• Working voltage range:  
nom. 2.4 to 75 V (E24 range)  
• Non-repetitive peak reverse power  
dissipation: max. 40 W.  
APPLICATIONS  
handbook, halfpage  
k
a
• Low voltage stabilizers or voltage  
MAM239  
references.  
The diodes are type branded.  
Fig.1 Simplified outline (SOD27; DO-35) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
mA  
IF  
continuous forward current  
−
250  
IZSM  
non-repetitive peak reverse current  
tp = 100 µs; square wave;  
Tj = 25 °C prior to surge  
see Table  
“Per type”  
Ptot  
total power dissipation  
Tamb = 50 °C; note 1  
−
400  
500  
40  
mW  
mW  
W
Tamb = 50 °C; note 2  
−
−
PZSM  
non-repetitive peak reverse power  
dissipation  
tp = 100 µs; square wave;  
Tj = 25 °C prior to surge  
tp = 8.3 ms; square wave;  
−
30  
W
Tj ≤ 150 °C prior to surge  
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
+200  
200  
°C  
°C  
−
Notes  
1. Device mounted on a printed circuit-board without metallization pad; lead length max.  
2. Tie-point temperature ≤ 50 °C; lead length 8 mm.  
ELECTRICAL CHARACTERISTICS  
Total series  
Tj = 25 °C; unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VF  
IF = 100 mA; see Fig.4  
−
1.0  
V
1996 Apr 26  
2
Per type  
Tj = 25 °C; unless otherwise specified.  
WORKING  
VOLTAGE  
VZ (V)  
DIFFERENTIAL TEMP. COEFF.  
TEST  
CURRENT  
IZtest (mA) at f = 1 MHz;  
at VR = 0 V  
DIODE CAP.  
Cd (pF)  
REVERSE CURRENT at  
REVERSE VOLTAGE  
IR (µA)  
NON-REPETITIVE  
PEAK REVERSE  
CURRENT  
IZSM (A)  
at tp = 100 µs;  
Tamb = 25 °C  
RESISTANCE  
SZ (mV/K)  
at IZtest  
rdif (Ω)  
BZX55-  
CXXX  
at IZtest  
see Figs 5 and 6  
at  
IZ  
at  
IZtest  
at  
at  
VR  
Tj = 25 °C Tj = 150 °C  
(V)  
MIN. MAX. MAX.  
MAX.  
85  
85  
85  
85  
85  
85  
80  
70  
50  
30  
10  
8
TYP.  
−1.8  
−1.9  
−2.1  
−2.2  
−2.4  
−2.4  
−2.4  
−1.4  
−0.8  
1.6  
MAX.  
MAX.  
50  
MAX.  
100  
50  
40  
40  
40  
40  
20  
10  
2
MAX.  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
1.5  
1.5  
1.5  
2.28  
2.5  
2.8  
3.1  
3.4  
3.7  
4.0  
4.4  
4.8  
5.2  
5.8  
6.4  
7.0  
7.7  
8.5  
9.4  
2.56  
2.9  
3.2  
3.5  
3.8  
4.1  
4.6  
5.0  
5.4  
6.0  
6.6  
7.2  
7.9  
8.7  
9.6  
600  
600  
600  
600  
600  
600  
600  
600  
550  
450  
200  
150  
50  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
450  
450  
450  
450  
450  
450  
450  
300  
300  
300  
200  
200  
150  
150  
150  
90  
1.0  
1.0  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
10  
4
1.0  
2
1.0  
2
1.0  
2
1.0  
1
1.0  
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
1.0  
1.0  
2
1.0  
2.2  
2
2.0  
3.0  
2
3.0  
7
3.8  
2
5.0  
50  
7
4.5  
2
6.15  
6.8  
50  
10  
15  
20  
20  
26  
30  
40  
50  
55  
5.5  
2
10.6  
70  
6.5  
2
7.5  
10.4  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
70  
7.7  
85  
2
8.25  
9.0  
11  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
90  
8.4  
85  
2
12  
110  
110  
170  
170  
220  
9.8  
80  
2
9.75  
11.25  
12.0  
13.5  
15.0  
13  
11.3  
12.8  
14.4  
16.0  
75  
2
15  
75  
2
16  
70  
2
18  
60  
2
20  
WORKING  
VOLTAGE  
VZ (V)  
DIFFERENTIAL TEMP. COEFF.  
TEST  
CURRENT  
IZtest (mA) at f = 1 MHz;  
at VR = 0 V  
DIODE CAP.  
Cd (pF)  
REVERSE CURRENT at  
REVERSE VOLTAGE  
IR (µA)  
NON-REPETITIVE  
PEAK REVERSE  
CURRENT  
IZSM (A)  
at tp = 100 µs;  
Tamb = 25 °C  
RESISTANCE  
SZ (mV/K)  
at IZtest  
rdif (Ω)  
BZX55-  
CXXX  
at IZtest  
see Figs 5 and 6  
at  
IZ  
at  
IZtest  
at  
at  
VR  
Tj = 25 °C Tj = 150 °C  
(V)  
MIN. MAX. MAX.  
MAX.  
TYP.  
MAX.  
MAX.  
MAX.  
MAX.  
20.8  
22.8  
25.1  
28.0  
31.0  
34.0  
37.0  
40.0  
44.0  
48.0  
52.0  
58.0  
64.0  
70.0  
23.3  
25.6  
28.9  
32.0  
35.0  
38.0  
41.0  
46.0  
50.0  
54.0  
60.0  
66.0  
72.0  
79.0  
220  
220  
55  
80  
18.7  
20.4  
22.9  
27.0  
29.7  
32.4  
35.1  
38.7  
44.0  
49.0  
55.0  
62.0  
70.0  
78.0  
5
60  
55  
50  
50  
45  
45  
45  
40  
40  
40  
40  
35  
35  
35  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
2
2
2
2
2
2
2
2
2
2
2
2
2
2
16.5  
1.25  
1.25  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.3  
0.25  
0.2  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
5
18.0  
220  
80  
5
20.25  
22.25  
24.75  
27.0  
220  
80  
5
220  
80  
5
220  
80  
5
500  
90  
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
29.25  
32.25  
35.25  
38.25  
42.0  
600  
90  
700  
110  
125  
135  
150  
200  
250  
700  
1000  
1000  
1000  
1500  
46.5  
51.0  
56.25  
Note  
1. For BZX55-C2V4 up to C36 IZ = 1 mA; for C39 up to C75 IZ = 0.5 mA.  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX55 series  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
300  
UNIT  
K/W  
K/W  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point lead length 8 mm  
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1  
380  
Note  
1. Device mounted on a printed circuit-board without metallization pad.  
GRAPHICAL DATA  
MBG930  
3
10  
δ = 1  
R
th j-a  
0.75  
0.50  
0.33  
(K/W)  
2
0.20  
10  
0.10  
0.05  
0.02  
0.01  
≤0.001  
10  
t
t
p
p
δ =  
T
T
1
10  
−1  
2
3
4
5
1
10  
10  
10  
10  
10  
t
(ms)  
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.  
1996 Apr 26  
5
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX55 series  
MBG801  
MBG781  
3
10  
300  
handbook, halfpage  
handbook, halfpage  
I
P
F
ZSM  
(mA)  
(W)  
2
10  
200  
(1)  
10  
100  
(2)  
1
10  
0
0.6  
−1  
0.8  
1.0  
1
duration (ms)  
10  
V
(V)  
F
(1) Tj = 25 °C (prior to surge).  
(2) Tj = 150 °C (prior to surge).  
Fig.3 Maximum permissible non-repetitive  
peak reverse power dissipation  
versus duration.  
Fig.4 Forward current as a function of forward  
voltage; typical values.  
MBG783  
MBG782  
0
10  
handbook, halfpage  
handbook, halfpage  
12  
S
S
Z
Z
11  
4V3  
(mV/K)  
(mV/K)  
10  
9V1  
−1  
5
3V9  
3V6  
8V2  
7V5  
6V8  
6V2  
5V6  
5V1  
−2  
−3  
0
3V3  
4V7  
3V0  
2V4  
2V7  
−5  
0
20  
40  
60  
0
4
8
12  
16  
20  
I
(mA)  
Z
I
(mA)  
Z
BZX55-C2V4 to C4V3.  
BZX55-C4V7 to C12.  
Tj = 25 to 150 °C.  
Tj = 25 to 150 °C.  
Fig.5 Temperature coefficient as a function of  
working current; typical values.  
Fig.6 Temperature coefficient as a function of  
working current; typical values.  
1996 Apr 26  
6
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX55 series  
PACKAGE OUTLINE  
n
0.56  
max  
1.85  
max  
4.25  
max  
MLA428 - 1  
25.4 min  
25.4 min  
Dimensions in mm.  
Fig.7 SOD27 (DO-35).  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Apr 26  
7

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