BZX585-B12 [NXP]
Voltage regulator diodes; 稳压二极管型号: | BZX585-B12 |
厂家: | NXP |
描述: | Voltage regulator diodes |
文件: | 总10页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZX585 series
Voltage regulator diodes
Product specification
2004 Jun 22
Supersedes data of 2004 Mar 26
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
FEATURES
PINNING
PIN
• Total power dissipation: max. 300 mW
• Two tolerance series: ± 2 % and ± 5 %
DESCRIPTION
1
2
cathode
anode
• Working voltage range: nominal 2.4 V to 75 V
(E24 range)
• Non-repetitive peak reverse power dissipation: max.
40 W.
APPLICATIONS
handbook, halfpage
1
2
• General regulation functions.
Top view
MAM387
DESCRIPTION
Low-power voltage regulator diodes encapsulated in an
ultra small SOD523 plastic SMD package.
The diodes are available in the normalized E24 ± 2 %
(BZX585-B) and ± 5 % (BZX585-C) tolerance range.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
The series consists of 37 types with nominal working
voltages from 2.4 V to 75 V.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX585-B2V4 to BZX585-B75
BZX585-B2V4
BZX585-B2V7
BZX585-B3V0
BZX585-B3V3
BZX585-B3V6
BZX585-B3V9
BZX585-B4V3
BZX585-B4V7
BZX585-B5V1
BZX585-B5V6
C1
C2
C3
C4
C5
C6
C7
C8
C9
C0
BZX585-B6V2
BZX585-B6V8
BZX585-B7V5
BZX585-B8V2
BZX585-B9V1
BZX585-B10
BZX585-B11
BZX585-B12
BZX585-B13
BZX585-B15
E1
E2
E3
E4
E5
E6
E7
E8
E9
E0
BZX585-B16
BZX585-B18
BZX585-B20
BZX585-B22
BZX585-B24
BZX585-B27
BZX585-B30
BZX585-B33
BZX585-B36
BZX585-B39
EA
EB
EC
ED
EE
EF
EG
EH
EK
EL
BZX585-B43
BZX585-B47
BZX585-B51
BZX585-B56
BZX585-B62
BZX585-B68
BZX585-B75
EM
EN
EP
ER
ES
ET
EU
2004 Jun 22
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX585-C2V4 to BZX585-C75
BZX585-C2V4
BZX585-C2V7
BZX585-C3V0
BZX585-C3V3
BZX585-C3V6
BZX585-C3V9
BZX585-C4V3
BZX585-C4V7
BZX585-C5V1
BZX585-C5V6
F1
F2
F3
F4
F5
F6
F7
F8
F9
F0
BZX585-C6V2
BZX585-C6V8
BZX585-C7V5
BZX585-C8V2
BZX585-C9V1
BZX585-C10
BZX585-C11
BZX585-C12
BZX585-C13
BZX585-C15
H1
H2
H3
H4
H5
H6
H7
H8
H9
H0
BZX585-C16
BZX585-C18
BZX585-C20
BZX585-C22
BZX585-C24
BZX585-C27
BZX585-C30
BZX585-C33
BZX585-C36
BZX585-C39
HA
HB
HC
HD
HE
HF
HG
HH
HK
HL
BZX585-C43
BZX585-C47
BZX585-C51
BZX585-C56
BZX585-C62
BZX585-C68
BZX585-C75
HM
HN
HP
HR
HS
HT
HU
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
DESCRIPTION
VERSION
BZX585-B2V4
to
BZX585-B75
−
Plastic surface mounted package; 2 leads
Plastic surface mounted package; 2 leads
SOD523
BZX585-C2V4
to
−
SOD523
BZX585-C75
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
200
see Tables 1 and 2
UNIT
IF
continuous forward current
−
mA
IZSM
non-repetitive peak reverse
current
tp = 100 µs; square wave;
amb = 25 °C prior to surge
T
PZSM
non-repetitive peak reverse
power dissipation
tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
−
40
W
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
300
mW
°C
−65
−65
+150
+150
°C
Note
1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
2004 Jun 22
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
ELECTRICAL CHARACTERISTICS
Total BZX585-B and C series
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.2
IF = 100 mA; see Fig.2
MAX.
UNIT
VF
0.9
1.1
V
V
IR
reverse current
BZX585-B/C2V4
BZX585-B/C2V7
BZX585-B/C3V0
BZX585-B/C3V3
BZX585-B/C3V6
BZX585-B/C3V9
BZX585-B/C4V3
BZX585-B/C4V7
BZX585-B/C5V1
BZX585-B/C5V6
BZX585-B/C6V2
BZX585-B/C6V8
BZX585-B/C7V5
BZX585-B/C8V2
BZX585-B/C9V1
BZX585-B/C10
BZX585-B/C11
BZX585-B/C12
BZX585-B/C13
BZX585-B/C15 to 75
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
50
20
10
5
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
2004 Jun 22
4
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Table 1 Per type BZX585-B/C2V4 to B/C24
Tamb = 25 °C unless otherwise specified.
WORKING VOLTAGE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see figs 3 AND 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
DIFFERENTIAL RESISTANCE
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 µs
VZ (V)
at IZtest = 5 mA
rdif (Ω)
BZX585-
B or C
XXX
Tol. ± 2% (B) Tol. ± 5% (C) at IZtest = 1 mA
MIN. MAX. MIN. MAX. TYP. MAX.
275 400
at IZtest = 5 mA
TYP. MAX.
70 100
TYP.
MAX.
MAX.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.35 2.45
2.65 2.75
2.94 3.06
3.23 3.37
3.53 3.67
3.82 3.98
4.21 4.39
4.61 4.79
5.00 5.20
5.49 5.71
6.08 6.32
6.66 6.94
7.35 7.65
8.04 8.36
8.92 9.28
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
300
325
350
375
400
410
425
400
80
450
500
500
500
500
600
500
480
400
150
80
75
80
85
85
85
80
50
40
15
6
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
40
45
55
55
70
40
2.2
30
6
3.0
15
80
2
3.6
20
80
2
4.3
20
100
150
150
150
170
200
200
225
225
250
250
2
5.2
9.80 10.20 9.50
10.50 20
2
6.0
11
10.78 11.22 10.45 11.55 25
11.76 12.24 11.40 12.60 25
12.74 13.26 12.35 13.65 25
14.70 15.30 14.25 15.75 25
15.68 16.32 15.20 16.80 50
17.64 18.36 17.10 18.90 50
19.60 20.40 19.00 21.00 60
21.56 22.44 20.90 23.10 60
23.52 24.48 22.80 25.20 60
2
6.9
12
2
7.9
13
2
8.8
15
3
10.7
12.4
14.4
16.4
18.4
20.4
16
10
10
15
20
25
18
80
20
70
22
60
24
55
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Table 2 Per type BZX585-B/C27 to B/C75
Tamb = 25 °C unless otherwise specified.
WORKING VOLTAGE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
DIFFERENTIAL RESISTANCE
VZ (V)
at IZtest = 2 mA
rdif (Ω)
BZX585-
B or C
XXX
IZSM (A) at tp = 100 µs
Tol. ± 2 % (B) Tol. ± 5 % (C) at IZtest = 0.5 mA at IZtest = 2 mA
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX.
300 25 80
TYP.
23.4
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
26.46 27.54 25.65 28.35 65
29.40 30.60 28.50 31.50 70
32.34 33.66 31.35 34.65 75
35.28 36.72 34.20 37.80 80
38.22 39.78 37.05 40.95 80
42.14 43.86 40.85 45.15 85
46.06 47.94 44.65 49.35 85
49.98 52.02 48.45 53.55 90
54.88 57.12 53.20 58.80 100
60.76 63.24 58.90 65.10 120
66.64 69.36 64.60 71.40 150
73.50 76.50 71.25 78.75 170
50
1.0
300
325
350
350
375
375
400
425
450
475
500
30
35
35
40
45
50
60
70
80
90
95
80
26.6
50
45
45
45
40
40
40
40
35
35
35
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
80
29.7
90
33.0
130
150
170
180
200
215
240
255
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
K/W
Rth(j-a)
Rth(j-s)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
350
65
Notes
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
2. Solder point at cathode tab.
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
GRAPHICAL DATA
MBG781
MLD444
300
0.5
handbook, halfpage
handbook, halfpage
S
Z
I
F
(mV/K)
0
4V7
(mA)
4V3
200
−0.5
2V4
2V7
3V9
3V6
−1
−1.5
−2
100
3V3
3V0
0
0.6
0.8
1
−1
2
V
(V)
10
1
10
10
F
I
(mA)
Z
BZX585-B/C2V4 to B/C4V7.
amb = 25 °C to 150 °C.
Tamb = 25 °C.
T
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Temperature coefficient as a function of
working current; typical values.
MLD445
12
handbook, halfpage
15
S
Z
(mV/K)
13
12
8
11
10
9V1
8V2
4
0
7V5
6V8
6V2
5V6
5V1
−4
10
−1
2
1
10
10
I
(mA)
Z
BZX585-B/C5V1 to B/C15.
Tamb = 25 °C to 150 °C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
2004 Jun 22
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.34
0.26
0.17
0.11
0.65
0.58
1.25
1.15
0.85
0.75
1.65
1.55
mm
0.1
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEITA
98-11-25
02-12-13
SOD523
SC-79
2004 Jun 22
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Jun 22
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp10
Date of release: 2004 Jun 22
Document order number: 9397 750 13303
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