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BZX585-B20,115 [NXP]

BZX585 series - Voltage regulator diodes SOD 2-Pin;
BZX585-B20,115
型号： BZX585-B20,115
厂家： NXP    NXP
描述：

BZX585 series - Voltage regulator diodes SOD 2-Pin

测试 光电二极管
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BZX585 series  
Voltage regulator diodes  
Product data sheet  
2004 Jun 22  
Supersedes data of 2004 Mar 26  
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX585 series  
FEATURES  
PINNING  
• Total power dissipation: max. 300 mW  
• Two tolerance series: ± 2 % and ± 5 %  
PIN  
1
DESCRIPTION  
cathode  
anode  
• Working voltage range: nominal 2.4 V to 75 V  
(E24 range)  
2
• Non-repetitive peak reverse power dissipation: max.  
40 W.  
APPLICATIONS  
handbook, halfpage  
1
2
• General regulation functions.  
Top view  
MAM387  
DESCRIPTION  
Low-power voltage regulator diodes encapsulated in an  
ultra small SOD523 plastic SMD package.  
The diodes are available in the normalized E24 ± 2 %  
(BZX585-B) and ± 5 % (BZX585-C) tolerance range.  
The marking bar indicates the cathode.  
Fig.1 Simplified outline (SOD523) and symbol.  
The series consists of 37 types with nominal working  
voltages from 2.4 V to 75 V.  
MARKING  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
Marking codes for BZX585-B2V4 to BZX585-B75  
BZX585-B2V4  
BZX585-B2V7  
BZX585-B3V0  
BZX585-B3V3  
BZX585-B3V6  
BZX585-B3V9  
BZX585-B4V3  
BZX585-B4V7  
BZX585-B5V1  
BZX585-B5V6  
C1  
C2  
C3  
C4  
C5  
C6  
C7  
C8  
C9  
C0  
BZX585-B6V2  
BZX585-B6V8  
BZX585-B7V5  
BZX585-B8V2  
BZX585-B9V1  
BZX585-B10  
BZX585-B11  
BZX585-B12  
BZX585-B13  
BZX585-B15  
E1  
E2  
E3  
E4  
E5  
E6  
E7  
E8  
E9  
E0  
BZX585-B16  
BZX585-B18  
BZX585-B20  
BZX585-B22  
BZX585-B24  
BZX585-B27  
BZX585-B30  
BZX585-B33  
BZX585-B36  
BZX585-B39  
EA  
EB  
EC  
ED  
EE  
EF  
EG  
EH  
EK  
EL  
BZX585-B43  
BZX585-B47  
BZX585-B51  
BZX585-B56  
BZX585-B62  
BZX585-B68  
BZX585-B75  
EM  
EN  
EP  
ER  
ES  
ET  
EU  
2004 Jun 22  
2
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX585 series  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
Marking codes for BZX585-C2V4 to BZX585-C75  
BZX585-C2V4  
BZX585-C2V7  
BZX585-C3V0  
BZX585-C3V3  
BZX585-C3V6  
BZX585-C3V9  
BZX585-C4V3  
BZX585-C4V7  
BZX585-C5V1  
BZX585-C5V6  
F1  
F2  
F3  
F4  
F5  
F6  
F7  
F8  
F9  
F0  
BZX585-C6V2  
BZX585-C6V8  
BZX585-C7V5  
BZX585-C8V2  
BZX585-C9V1  
BZX585-C10  
BZX585-C11  
BZX585-C12  
BZX585-C13  
BZX585-C15  
H1  
H2  
H3  
H4  
H5  
H6  
H7  
H8  
H9  
H0  
BZX585-C16  
BZX585-C18  
BZX585-C20  
BZX585-C22  
BZX585-C24  
BZX585-C27  
BZX585-C30  
BZX585-C33  
BZX585-C36  
BZX585-C39  
HA  
HB  
HC  
HD  
HE  
HF  
HG  
HH  
HK  
HL  
BZX585-C43  
BZX585-C47  
BZX585-C51  
BZX585-C56  
BZX585-C62  
BZX585-C68  
BZX585-C75  
HM  
HN  
HP  
HR  
HS  
HT  
HU  
ORDERING INFORMATION  
PACKAGE  
TYPE  
NUMBER  
NAME  
DESCRIPTION  
VERSION  
BZX585-B2V4  
to  
BZX585-B75  
−
Plastic surface mounted package; 2 leads  
Plastic surface mounted package; 2 leads  
SOD523  
BZX585-C2V4  
to  
−
SOD523  
BZX585-C75  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
200  
see Tables 1 and 2  
UNIT  
IF  
continuous forward current  
−
mA  
IZSM  
non-repetitive peak reverse  
current  
tp = 100 μs; square wave;  
amb = 25 °C prior to surge  
T
PZSM  
non-repetitive peak reverse  
power dissipation  
tp = 100 μs; square wave;  
Tamb = 25 °C prior to surge  
−
40  
W
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 25 °C; note 1  
−
300  
mW  
°C  
−65  
−65  
+150  
+150  
°C  
Note  
1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.  
2004 Jun 22  
3
 
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX585 series  
ELECTRICAL CHARACTERISTICS  
Total BZX585-B and C series  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 10 mA; see Fig.2  
IF = 100 mA; see Fig.2  
MAX.  
UNIT  
VF  
0.9  
1.1  
V
V
IR  
reverse current  
BZX585-B/C2V4  
BZX585-B/C2V7  
BZX585-B/C3V0  
BZX585-B/C3V3  
BZX585-B/C3V6  
BZX585-B/C3V9  
BZX585-B/C4V3  
BZX585-B/C4V7  
BZX585-B/C5V1  
BZX585-B/C5V6  
BZX585-B/C6V2  
BZX585-B/C6V8  
BZX585-B/C7V5  
BZX585-B/C8V2  
BZX585-B/C9V1  
BZX585-B/C10  
BZX585-B/C11  
BZX585-B/C12  
BZX585-B/C13  
BZX585-B/C15 to 75  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 2 V  
VR = 2 V  
VR = 2 V  
VR = 4 V  
VR = 4 V  
VR = 5 V  
VR = 5 V  
VR = 6 V  
VR = 7 V  
VR = 8 V  
VR = 8 V  
VR = 8 V  
VR = 0.7VZnom  
50  
20  
10  
5
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
5
3
3
3
2
1
3
2
1
700  
500  
200  
100  
100  
100  
50  
2004 Jun 22  
4
Table 1 Per type BZX585-B/C2V4 to B/C24  
Tamb = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
TEMP. COEFF.  
SZ (mV/K)  
at IZtest = 5 mA  
(see figs 3 AND 4)  
DIODE CAP.  
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
DIFFERENTIAL RESISTANCE  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
IZSM (A) at tp = 100 μs  
VZ (V)  
rdif (Ω)  
BZX585-  
at IZtest = 5 mA  
B or C  
XXX  
Tol. ± 2% (B) Tol. ± 5% (C) at IZtest = 1 mA  
MIN. MAX. MIN. MAX. TYP. MAX.  
275 400  
at IZtest = 5 mA  
TYP.  
70  
MAX.  
100  
TYP.  
MAX.  
MAX.  
2V4  
2.35 2.45  
2.65 2.75  
2.94 3.06  
3.23 3.37  
3.53 3.67  
3.82 3.98  
4.21 4.39  
4.61 4.79  
5.00 5.20  
5.49 5.71  
6.08 6.32  
6.66 6.94  
7.35 7.65  
8.04 8.36  
8.92 9.28  
2.28  
2.57  
2.85  
3.14  
3.42  
3.71  
4.09  
4.47  
4.85  
5.32  
5.89  
6.46  
7.13  
7.79  
8.65  
2.52  
2.84  
3.15  
3.47  
3.78  
4.10  
4.52  
4.94  
5.36  
5.88  
6.51  
7.14  
7.88  
8.61  
9.56  
−1.3  
−1.4  
−1.6  
−1.8  
−1.9  
−1.9  
−1.7  
−1.2  
−0.5  
1.0  
450  
440  
425  
410  
390  
370  
350  
325  
300  
275  
250  
215  
170  
150  
120  
110  
110  
105  
105  
100  
90  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
1.5  
1.5  
1.5  
1.25  
1.25  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
300  
325  
350  
375  
400  
410  
425  
400  
80  
450  
500  
500  
500  
500  
600  
500  
480  
400  
150  
80  
75  
80  
85  
85  
85  
80  
50  
40  
15  
6
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
10  
10  
10  
10  
10  
10  
10  
15  
40  
45  
55  
55  
70  
40  
2.2  
30  
6
3.0  
15  
80  
2
3.6  
20  
80  
2
4.3  
20  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
2
5.2  
9.80 10.20 9.50  
10.50 20  
2
6.0  
11  
10.78 11.22 10.45 11.55 25  
11.76 12.24 11.40 12.60 25  
12.74 13.26 12.35 13.65 25  
14.70 15.30 14.25 15.75 25  
15.68 16.32 15.20 16.80 50  
17.64 18.36 17.10 18.90 50  
19.60 20.40 19.00 21.00 60  
21.56 22.44 20.90 23.10 60  
23.52 24.48 22.80 25.20 60  
2
6.9  
12  
2
7.9  
13  
2
8.8  
15  
3
10.7  
12.4  
14.4  
16.4  
18.4  
20.4  
16  
10  
10  
15  
20  
25  
18  
80  
20  
70  
22  
60  
24  
55  
Table 2 Per type BZX585-B/C27 to B/C75  
Tamb = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
TEMP. COEFF.  
SZ (mV/K)  
at IZtest = 2 mA  
(see figs 3 and 4)  
DIODE CAP.  
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
NON-REPETITIVE  
PEAK REVERSE  
CURRENT  
DIFFERENTIAL RESISTANCE  
VZ (V)  
rdif (Ω)  
BZX585-  
at IZtest = 2 mA  
B or C  
IZSM (A) at tp = 100 μs  
XXX  
Tol. ± 2 % (B) Tol. ± 5 % (C) at IZtest = 0.5 mA at IZtest = 2 mA  
MIN.  
MAX. MIN. MAX.  
TYP.  
MAX.  
300  
TYP.  
25  
MAX.  
80  
TYP.  
MAX.  
MAX.  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
26.46  
29.40  
32.34  
35.28  
38.22  
42.14  
46.06  
49.98  
54.88  
60.76  
66.64  
73.50  
27.54 25.65 28.35 65  
30.60 28.50 31.50 70  
33.66 31.35 34.65 75  
36.72 34.20 37.80 80  
39.78 37.05 40.95 80  
43.86 40.85 45.15 85  
47.94 44.65 49.35 85  
52.02 48.45 53.55 90  
57.12 53.20 58.80 100  
63.24 58.90 65.10 120  
69.36 64.60 71.40 150  
76.50 71.25 78.75 170  
23.4  
26.6  
29.7  
33.0  
36.4  
41.2  
46.1  
51.0  
57.0  
64.4  
71.7  
80.2  
50  
1.0  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
30  
35  
35  
40  
45  
50  
60  
70  
80  
90  
95  
80  
50  
45  
45  
45  
40  
40  
40  
40  
35  
35  
35  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.3  
0.25  
0.2  
80  
90  
130  
150  
170  
180  
200  
215  
240  
255  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
Rth(j-s)  
thermal resistance from junction to ambient  
thermal resistance from junction to solder point  
note 1  
note 2  
350  
65  
K/W  
K/W  
Notes  
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.  
2. Solder point at cathode tab.  
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX585 series  
GRAPHICAL DATA  
MBG781  
MLD444  
300  
0.5  
handbook, halfpage  
handbook, halfpage  
S
Z
I
F
(mV/K)  
0
4V7  
(mA)  
4V3  
200  
−0.5  
2V4  
2V7  
3V9  
3V6  
−1  
−1.5  
−2  
100  
3V3  
3V0  
0
0.6  
0.8  
1
−1  
2
V
(V)  
10  
1
10  
10  
F
I
(mA)  
Z
BZX585-B/C2V4 to B/C4V7.  
Tamb = 25 °C.  
Tamb = 25 °C to 150 °C.  
Fig.2 Forward current as a function of forward  
voltage; typical values.  
Fig.3 Temperature coefficient as a function of  
working current; typical values.  
MLD445  
12  
handbook, halfpage  
15  
S
Z
(mV/K)  
13  
12  
8
11  
10  
9V1  
8V2  
4
0
7V5  
6V8  
6V2  
5V6  
5V1  
−4  
−1  
2
10  
1
10  
10  
I
(mA)  
Z
BZX585-B/C5V1 to B/C15.  
amb = 25 °C to 150 °C.  
T
Fig.4 Temperature coefficient as a function of  
working current; typical values.  
2004 Jun 22  
7
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX585 series  
PACKAGE OUTLINE  
Plastic surface-mounted package; 2 leads  
SOD523  
A
c
v
M
A
H
E
A
D
0
0.5  
1 mm  
scale  
1
2
DIMENSIONS (mm are the original dimensions)  
b
E
p
UNIT  
A
b
c
D
E
H
v
p
E
0.34  
0.26  
0.17  
0.11  
0.65  
0.58  
1.25  
1.15  
0.85  
0.75  
1.65  
1.55  
mm  
0.1  
(1)  
Note  
1. The marking bar indicates the cathode.  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEITA  
02-12-13  
06-03-16  
SOD523  
SC-79  
2004 Jun 22  
8
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX585 series  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General ⎯ Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale ⎯ NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes ⎯ NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license ⎯ Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use ⎯ NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control ⎯ This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data ⎯ The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications ⎯ Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values ⎯ Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2004 Jun 22  
9
 
 
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R76/04/pp10  
Date of release: 2004 Jun 22  
Document order number: 9397 750 13303  

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SI9136_11

 Multi-Output Power-Supply Controller

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SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130_11

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SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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