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BZX79-B12,113 [NXP]

BZX79 series - Voltage regulator diodes AXIAL 2-Pin;
BZX79-B12,113
型号： BZX79-B12,113
厂家： NXP    NXP
描述：

BZX79 series - Voltage regulator diodes AXIAL 2-Pin

测试 二极管
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BZX79 series  
Voltage regulator diodes  
Product data sheet  
2002 Feb 27  
Supersedes data of 1999 May 25  
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX79 series  
FEATURES  
• Total power dissipation: max. 500 mW  
• Two tolerance series: ±2%, and approx. ±5%  
• Working voltage range: nom. 2.4 to 75 V (E24 range)  
• Non-repetitive peak reverse power dissipation:  
max. 40 W.  
handbook, halfpage  
k
a
APPLICATIONS  
MAM239  
• Low voltage stabilizers or voltage references.  
DESCRIPTION  
Low-power voltage regulator diodes in hermetically sealed  
leaded glass SOD27 (DO-35) packages. The diodes are  
available in the normalized E24 ±2% (BZX79-B) and  
approx. ±5% (BZX79-C) tolerance range. The series  
consists of 37 types with nominal working voltages from  
2.4 to 75 V.  
The diodes are type branded.  
Fig.1 Simplified outline (SOD27; DO-35) and  
symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
250  
see Tables 1 and 2 A  
UNIT  
IF  
continuous forward current  
non-repetitive peak reverse current  
−
mA  
IZSM  
tp = 100 μs; square wave;  
Tj = 25 °C prior to surge  
Ptot  
total power dissipation  
Tamb = 50 °C; note 1  
Tamb = 50 °C; note 2  
−
−
−
400  
500  
40  
mW  
mW  
W
PZSM  
non-repetitive peak reverse power  
dissipation  
tp = 100 μs; square wave;  
Tj = 25 °C prior to surge; see Fig.3  
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
−65  
+200  
+200  
°C  
°C  
Notes  
1. Device mounted on a printed circuit-board without metallization pad; lead length max.  
2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.  
ELECTRICAL CHARACTERISTICS  
Total BZX79-B and BZX79-C series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 10 mA; see Fig.4  
MAX.  
UNIT  
VF  
0.9  
V
2002 Feb 27  
2
 
 
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX79 series  
SYMBOL  
PARAMETER  
reverse current  
CONDITIONS  
MAX.  
UNIT  
IR  
BZX79-B/C2V4  
BZX79-B/C2V7  
BZX79-B/C3V0  
BZX79-B/C3V3  
BZX79-B/C3V6  
BZX79-B/C3V9  
BZX79-B/C4V3  
BZX79-B/C4V7  
BZX79-B/C5V1  
BZX79-B/C5V6  
BZX79-B/C6V2  
BZX79-B/C6V8  
BZX79-B/C7V5  
BZX79-B/C8V2  
BZX79-B/C9V1  
BZX79-B/C10  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 2 V  
VR = 2 V  
VR = 2 V  
VR = 4 V  
VR = 4 V  
VR = 5 V  
VR = 5 V  
VR = 6 V  
VR = 7 V  
VR = 8 V  
VR = 8 V  
VR = 8 V  
50  
μA  
20  
10  
5
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
5
3
3
3
2
1
3
2
1
700  
500  
200  
100  
100  
100  
50  
BZX79-B/C11  
BZX79-B/C12  
BZX79-B/C13  
BZX79-B/C15 to BZX79-B/C75  
VR = 0.7VZnom  
2002 Feb 27  
3
Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
VZ (V)  
DIFFERENTIAL RESISTANCE  
dif (Ω)  
TEMP. COEFF.  
SZ (mV/K)  
at IZtest = 5 mA  
(see Figs 5 and 6)  
DIODECAP. NON-REPETITIVE PEAK  
r
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
REVERSE CURRENT  
IZSM (A)  
at tp = 100 μs; Tamb = 25 °C  
at IZtest = 5 mA  
BZX79-  
Bxxx  
Cxxx  
Tol. approx.  
±5% (C)  
Tol. ±2% (B)  
at IZtest = 1 mA at IZtest = 5 mA  
MIN. MAX. MIN. MAX.  
TYP.  
275  
MAX.  
600  
TYP. MAX. MIN.  
TYP. MAX.  
MAX.  
MAX.  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
2.35  
2.65  
2.94  
3.23  
3.53  
3.82  
4.21  
4.61  
5.00  
5.49  
6.08  
6.66  
7.35  
8.04  
8.92  
9.80  
2.45  
2.75  
3.06  
3.37  
3.67  
3.98  
4.39  
4.79  
5.20  
5.71  
6.32  
6.94  
7.65  
8.36  
9.28  
2.2  
2.5  
2.8  
3.1  
3.4  
3.7  
4.0  
4.4  
4.8  
5.2  
5.8  
6.4  
7.0  
7.7  
8.5  
2.6  
70  
75  
80  
85  
85  
85  
80  
50  
40  
15  
6
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
55  
70  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−2.7  
−2.0  
0.4  
−1.6  
−2.0  
−2.1  
−2.4  
−2.4  
−2.5  
−2.5  
−1.4  
−0.8  
1.2  
0
450  
450  
450  
450  
450  
450  
450  
300  
300  
300  
200  
200  
150  
150  
150  
90  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
1.5  
1.5  
1.5  
1.25  
1.25  
2.9  
300  
325  
350  
375  
400  
410  
425  
400  
80  
600  
600  
600  
600  
600  
600  
500  
480  
400  
150  
80  
0
3.2  
0
3.5  
0
3.8  
0
4.1  
0
4.6  
0
5.0  
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
10.0  
11.0  
13.0  
14.0  
16.0  
18.0  
20.0  
22.0  
5.4  
6.0  
6.6  
40  
2.3  
7.2  
30  
6
1.2  
3.0  
7.9  
30  
80  
6
2.5  
4.0  
8.7  
40  
80  
6
3.2  
4.6  
9.6  
40  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
6
3.8  
5.5  
10.20 9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
50  
8
4.5  
6.4  
11  
10.80 11.20 10.4  
11.80 12.20 11.4  
12.70 13.30 12.4  
14.70 15.30 13.8  
15.70 16.30 15.3  
17.60 18.40 16.8  
19.60 20.40 18.8  
21.60 22.40 20.8  
23.50 24.50 22.8  
50  
10  
10  
10  
10  
10  
10  
15  
20  
25  
5.4  
7.4  
85  
12  
50  
6.0  
8.4  
85  
13  
50  
7.0  
9.4  
80  
15  
50  
9.2  
11.4  
12.4  
14.4  
15.6  
17.6  
19.6  
75  
16  
50  
10.4  
12.4  
12.3  
14.1  
15.9  
75  
18  
50  
70  
20  
60  
60  
22  
60  
60  
24  
60  
55  
Table 2 Per type, BZX79-B/C27 to BZX79-B/C75  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
VZ (V)  
DIFFERENTIAL RESISTANCE  
dif (Ω)  
TEMP. COEFF.  
SZ (mV/K)  
at IZtest = 2 mA  
(see Figs 5 and 6)  
DIODECAP. NON-REPETITIVE PEAK  
r
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
REVERSE CURRENT  
IZSM (A)  
at tp = 100 μs; Tamb = 25 °C  
at IZtest = 2 mA  
BZX79-  
Bxxx  
Cxxx  
Tol. approx.  
±5% (C)  
Tol. ±2% (B)  
at IZtest = 0.5 mA at IZtest = 2 mA  
MIN. MAX. MIN. MAX.  
TYP.  
65  
MAX.  
300  
TYP. MAX. MIN.  
TYP. MAX.  
MAX.  
MAX.  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
26.50 27.50 25.1  
29.40 30.60 28.0  
32.30 33.70 31.0  
35.30 36.70 34.0  
38.20 39.80 37.0  
42.10 43.90 40.0  
46.10 47.90 44.0  
50.00 52.00 48.0  
54.90 57.10 52.0  
60.80 63.20 58.0  
66.60 69.40 64.0  
73.50 76.50 70.0  
28.9  
32.0  
35.0  
38.0  
41.0  
46.0  
50.0  
54.0  
60.0  
66.0  
72.0  
79.0  
25  
30  
35  
35  
40  
45  
50  
60  
70  
80  
90  
95  
80  
18.0  
20.6  
23.3  
26.0  
28.7  
31.4  
35.0  
38.6  
42.2  
58.8  
65.6  
73.4  
22.7  
25.7  
28.7  
31.8  
34.8  
38.8  
42.9  
46.9  
52.0  
64.4  
71.7  
80.2  
25.3  
29.4  
33.4  
37.4  
41.2  
46.6  
51.8  
57.2  
63.8  
71.6  
79.8  
88.6  
50  
50  
45  
45  
45  
40  
40  
40  
40  
35  
35  
35  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.3  
0.25  
0.2  
70  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
80  
75  
80  
80  
90  
80  
130  
150  
170  
180  
200  
215  
240  
255  
85  
85  
90  
100  
120  
150  
170  
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX79 series  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-tp  
PARAMETER  
CONDITIONS  
VALUE  
300  
UNIT  
K/W  
K/W  
thermal resistance from junction to tie-point lead length 8 mm.  
Rth j-a  
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1  
380  
Note  
1. Device mounted on a printed circuit-board without metallization pad.  
GRAPHICAL DATA  
MBG930  
3
10  
δ = 1  
R
th j-a  
0.75  
0.50  
0.33  
(K/W)  
2
0.20  
10  
0.10  
0.05  
0.02  
0.01  
≤0.001  
10  
t
t
p
p
δ
=
T
T
1
10  
−1  
2
3
4
5
1
10  
10  
10  
10  
10  
t
(ms)  
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.  
2002 Feb 27  
6
 
 
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX79 series  
MBG801  
MBG781  
3
10  
300  
handbook, halfpage  
handbook, halfpage  
I
P
F
ZSM  
(mA)  
(W)  
2
200  
10  
(1)  
10  
100  
(2)  
0
0.6  
1
10  
0.8  
1
−1  
1
duration (ms)  
10  
V
(V)  
F
(1) Tj = 25 °C (prior to surge).  
(2) Tj = 150 °C (prior to surge).  
Tj = 25 °C.  
Fig.3 Maximum permissible non-repetitive peak  
reverse power dissipation versus duration.  
Fig.4 Typical forward current as a function of  
forward voltage.  
MBG783  
MBG782  
0
10  
handbook, halfpage  
handbook, halfpage  
12  
S
Z
(mV/K)  
S
Z
11  
4V3  
(mV/K)  
10  
9V1  
−1  
5
3V9  
8V2  
7V5  
6V8  
3V6  
6V2  
5V6  
5V1  
−2  
−3  
0
3V3  
4V7  
3V0  
2V4  
2V7  
−5  
0
20  
40  
60  
0
4
8
12  
16  
20  
I
(mA)  
Z
I
(mA)  
Z
BZX79-B/C4V7 to BZX79-B/C12.  
BZX79-B/C2V4 to BZX79-B/C4V3.  
Tj = 25 to 150 °C.  
Tj = 25 to 150 °C.  
Fig.5 Temperature coefficient as a function of  
working current; typical values.  
Fig.6 Temperature coefficient as a function of  
working current; typical values.  
2002 Feb 27  
7
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX79 series  
PACKAGE OUTLINE  
Hermetically sealed glass package; axial leaded; 2 leads  
SOD27  
(1)  
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)  
0
1
2 mm  
G
D
L
b
1
UNIT  
max.  
min.  
max.  
max.  
scale  
mm  
0.56  
1.85  
4.25  
25.4  
Note  
1. The marking band indicates the cathode.  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
DO-35  
EIAJ  
97-06-09  
SOD27  
A24  
SC-40  
2002 Feb 27  
8
NXP Semiconductors  
Product data sheet  
Voltage regulator diodes  
BZX79 series  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General ⎯ Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale ⎯ NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes ⎯ NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license ⎯ Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use ⎯ NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control ⎯ This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data ⎯ The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications ⎯ Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values ⎯ Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2002 Feb 27  
9
 
 
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/03/pp10  
Date of release: 2002 Feb 27  
Document order number: 9397 750 09387  

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 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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VISHAY
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