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BZX79-B13/A52A [NXP]

13V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS, SC-40, 2 PIN;
BZX79-B13/A52A
型号： BZX79-B13/A52A
厂家： NXP    NXP
描述：

13V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS, SC-40, 2 PIN

测试 二极管
文件： 总12页 (文件大小：61K)
中文：  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BZX79 series  
Voltage regulator diodes  
Product specification  
2002 Feb 27  
Supersedes data of 1999 May 25  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX79 series  
FEATURES  
• Total power dissipation: max. 500 mW  
• Two tolerance series: ±2%, and approx. ±5%  
• Working voltage range: nom. 2.4 to 75 V (E24 range)  
• Non-repetitive peak reverse power dissipation:  
max. 40 W.  
handbook, halfpage  
k
a
APPLICATIONS  
MAM239  
• Low voltage stabilizers or voltage references.  
DESCRIPTION  
Low-power voltage regulator diodes in hermetically sealed  
leaded glass SOD27 (DO-35) packages. The diodes are  
available in the normalized E24 ±2% (BZX79-B) and  
approx. ±5% (BZX79-C) tolerance range. The series  
consists of 37 types with nominal working voltages from  
2.4 to 75 V.  
The diodes are type branded.  
Fig.1 Simplified outline (SOD27; DO-35) and  
symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
250  
see Tables 1 and 2 A  
UNIT  
IF  
continuous forward current  
−
mA  
IZSM  
non-repetitive peak reverse current  
tp = 100 µs; square wave;  
Tj = 25 °C prior to surge  
Ptot  
total power dissipation  
Tamb = 50 °C; note 1  
−
−
−
400  
500  
40  
mW  
Tamb = 50 °C; note 2  
mW  
W
PZSM  
non-repetitive peak reverse power  
dissipation  
tp = 100 µs; square wave;  
Tj = 25 °C prior to surge; see Fig.3  
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
−65  
+200  
+200  
°C  
°C  
Notes  
1. Device mounted on a printed circuit-board without metallization pad; lead length max.  
2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.  
ELECTRICAL CHARACTERISTICS  
Total BZX79-B and BZX79-C series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 10 mA; see Fig.4  
MAX.  
UNIT  
VF  
0.9  
V
2002 Feb 27  
2
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX79 series  
SYMBOL  
PARAMETER  
reverse current  
CONDITIONS  
MAX.  
UNIT  
IR  
BZX79-B/C2V4  
BZX79-B/C2V7  
BZX79-B/C3V0  
BZX79-B/C3V3  
BZX79-B/C3V6  
BZX79-B/C3V9  
BZX79-B/C4V3  
BZX79-B/C4V7  
BZX79-B/C5V1  
BZX79-B/C5V6  
BZX79-B/C6V2  
BZX79-B/C6V8  
BZX79-B/C7V5  
BZX79-B/C8V2  
BZX79-B/C9V1  
BZX79-B/C10  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 2 V  
VR = 2 V  
VR = 2 V  
VR = 4 V  
VR = 4 V  
VR = 5 V  
VR = 5 V  
VR = 6 V  
VR = 7 V  
VR = 8 V  
VR = 8 V  
VR = 8 V  
50  
µA  
20  
10  
5
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
5
3
3
3
2
1
3
2
1
700  
500  
200  
100  
100  
100  
50  
BZX79-B/C11  
BZX79-B/C12  
BZX79-B/C13  
BZX79-B/C15 to BZX79-B/C75  
VR = 0.7VZnom  
2002 Feb 27  
3
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Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
VZ (V)  
DIFFERENTIAL RESISTANCE  
TEMP. COEFF.  
SZ (mV/K)  
DIODE CAP.  
Cd (pF)  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
rdif (Ω)  
at IZtest = 5 mA  
at IZtest = 5 mA  
(see Figs 5 and 6)  
at f = 1 MHz;  
VR = 0 V  
IZSM (A)  
at tp = 100 µs; Tamb = 25 °C  
BZX79-  
Bxxx  
Cxxx  
Tol. approx.  
Tol. ±2% (B)  
at IZtest = 1 mA at IZtest = 5 mA  
±5% (C)  
MIN. MAX. MIN. MAX.  
TYP.  
275  
MAX.  
600  
TYP.  
70  
MAX. MIN.  
TYP. MAX.  
MAX.  
MAX.  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
2.35  
2.65  
2.94  
3.23  
3.53  
3.82  
4.21  
4.61  
5.00  
5.49  
6.08  
6.66  
7.35  
8.04  
8.92  
9.80  
2.45  
2.75  
3.06  
3.37  
3.67  
3.98  
4.39  
4.79  
5.20  
5.71  
6.32  
6.94  
7.65  
8.36  
9.28  
2.2  
2.5  
2.8  
3.1  
3.4  
3.7  
4.0  
4.4  
4.8  
5.2  
5.8  
6.4  
7.0  
7.7  
8.5  
2.6  
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
55  
70  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−2.7  
−2.0  
0.4  
−1.6  
−2.0  
−2.1  
−2.4  
−2.4  
−2.5  
−2.5  
−1.4  
−0.8  
1.2  
0
450  
450  
450  
450  
450  
450  
450  
300  
300  
300  
200  
200  
150  
150  
150  
90  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
1.5  
1.5  
1.5  
1.25  
1.25  
2.9  
300  
325  
350  
375  
400  
410  
425  
400  
80  
600  
600  
600  
600  
600  
600  
500  
480  
400  
150  
80  
75  
80  
85  
85  
85  
80  
50  
40  
15  
6
0
3.2  
0
3.5  
0
3.8  
0
4.1  
0
4.6  
0
5.0  
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
10.0  
11.0  
13.0  
14.0  
16.0  
18.0  
20.0  
22.0  
5.4  
6.0  
6.6  
40  
2.3  
7.2  
30  
6
1.2  
3.0  
7.9  
30  
80  
6
2.5  
4.0  
8.7  
40  
80  
6
3.2  
4.6  
9.6  
40  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
6
3.8  
5.5  
10.20 9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
50  
8
4.5  
6.4  
11  
10.80 11.20 10.4  
11.80 12.20 11.4  
12.70 13.30 12.4  
14.70 15.30 13.8  
15.70 16.30 15.3  
17.60 18.40 16.8  
19.60 20.40 18.8  
21.60 22.40 20.8  
23.50 24.50 22.8  
50  
10  
10  
10  
10  
10  
10  
15  
20  
25  
5.4  
7.4  
85  
12  
50  
6.0  
8.4  
85  
13  
50  
7.0  
9.4  
80  
15  
50  
9.2  
11.4  
12.4  
14.4  
15.6  
17.6  
19.6  
75  
16  
50  
10.4  
12.4  
12.3  
14.1  
15.9  
75  
18  
50  
70  
20  
60  
60  
22  
60  
60  
24  
60  
55  
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Table 2 Per type, BZX79-B/C27 to BZX79-B/C75  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
VZ (V)  
DIFFERENTIAL RESISTANCE  
TEMP. COEFF.  
SZ (mV/K)  
DIODE CAP.  
Cd (pF)  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
rdif (Ω)  
at IZtest = 2 mA  
at IZtest = 2 mA  
(see Figs 5 and 6)  
at f = 1 MHz;  
VR = 0 V  
IZSM (A)  
at tp = 100 µs; Tamb = 25 °C  
BZX79-  
Bxxx  
Cxxx  
Tol. approx.  
Tol. ±2% (B)  
at IZtest = 0.5 mA at IZtest = 2 mA  
±5% (C)  
MIN. MAX. MIN. MAX.  
TYP.  
65  
MAX.  
300  
TYP.  
25  
MAX. MIN.  
TYP. MAX.  
MAX.  
MAX.  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
26.50 27.50 25.1  
29.40 30.60 28.0  
32.30 33.70 31.0  
35.30 36.70 34.0  
38.20 39.80 37.0  
42.10 43.90 40.0  
46.10 47.90 44.0  
50.00 52.00 48.0  
54.90 57.10 52.0  
60.80 63.20 58.0  
66.60 69.40 64.0  
73.50 76.50 70.0  
28.9  
32.0  
35.0  
38.0  
41.0  
46.0  
50.0  
54.0  
60.0  
66.0  
72.0  
79.0  
80  
18.0  
20.6  
23.3  
26.0  
28.7  
31.4  
35.0  
38.6  
42.2  
58.8  
65.6  
73.4  
22.7  
25.7  
28.7  
31.8  
34.8  
38.8  
42.9  
46.9  
52.0  
64.4  
71.7  
80.2  
25.3  
29.4  
33.4  
37.4  
41.2  
46.6  
51.8  
57.2  
63.8  
71.6  
79.8  
88.6  
50  
50  
45  
45  
45  
40  
40  
40  
40  
35  
35  
35  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.3  
0.25  
0.2  
70  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
30  
35  
35  
40  
45  
50  
60  
70  
80  
90  
95  
80  
75  
80  
80  
90  
80  
130  
150  
170  
180  
200  
215  
240  
255  
85  
85  
90  
100  
120  
150  
170  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX79 series  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
300  
UNIT  
K/W  
K/W  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point lead length 8 mm.  
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1  
380  
Note  
1. Device mounted on a printed circuit-board without metallization pad.  
GRAPHICAL DATA  
MBG930  
3
10  
δ = 1  
R
th j-a  
0.75  
0.50  
0.33  
(K/W)  
2
0.20  
10  
0.10  
0.05  
0.02  
0.01  
≤0.001  
10  
t
t
p
p
δ =  
T
T
1
10  
−1  
2
3
4
5
1
10  
10  
10  
10  
10  
t
(ms)  
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.  
2002 Feb 27  
6
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX79 series  
MBG801  
MBG781  
3
10  
300  
handbook, halfpage  
handbook, halfpage  
I
P
F
ZSM  
(mA)  
(W)  
2
10  
200  
(1)  
10  
100  
(2)  
1
10  
0
0.6  
−1  
0.8  
1.0  
1
duration (ms)  
10  
V
(V)  
F
(1) Tj = 25 °C (prior to surge).  
(2) Tj = 150 °C (prior to surge).  
Tj = 25 °C.  
Fig.3 Maximum permissible non-repetitive peak  
reverse power dissipation versus duration.  
Fig.4 Typical forward current as a function of  
forward voltage.  
MBG783  
MBG782  
0
10  
handbook, halfpage  
handbook, halfpage  
12  
S
Z
(mV/K)  
S
Z
11  
4V3  
(mV/K)  
10  
9V1  
−1  
5
3V9  
8V2  
7V5  
6V8  
3V6  
6V2  
5V6  
5V1  
−2  
0
3V3  
4V7  
3V0  
2V4  
2V7  
−3  
−5  
0
20  
40  
60  
0
4
8
12  
16  
20  
I
(mA)  
Z
I
(mA)  
Z
BZX79-B/C4V7 to BZX79-B/C12.  
BZX79-B/C2V4 to BZX79-B/C4V3.  
Tj = 25 to 150 °C.  
Tj = 25 to 150 °C.  
Fig.5 Temperature coefficient as a function of  
working current; typical values.  
Fig.6 Temperature coefficient as a function of  
working current; typical values.  
2002 Feb 27  
7
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX79 series  
PACKAGE OUTLINE  
Hermetically sealed glass package; axial leaded; 2 leads  
SOD27  
(1)  
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)  
0
1
2 mm  
G
D
L
b
1
UNIT  
max.  
min.  
max.  
max.  
scale  
mm  
0.56  
1.85  
4.25  
25.4  
Note  
1. The marking band indicates the cathode.  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
DO-35  
EIAJ  
97-06-09  
SOD27  
A24  
SC-40  
2002 Feb 27  
8
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX79 series  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2002 Feb 27  
9
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX79 series  
NOTES  
2002 Feb 27  
10  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX79 series  
NOTES  
2002 Feb 27  
11  
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2002  
SCA74  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/03/pp12  
Date of release: 2002 Feb 27  
Document order number: 9397 750 09387  

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 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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