BZX84-C4V3 [NXP]
Voltage regulator diodes; 稳压二极管
| 型号： | BZX84-C4V3 |
| 厂家： | 
NXP |
| 描述： | Voltage regulator diodes |
| 文件： | 总13页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZX84 series
Voltage regulator diodes
Product specification
2003 Apr 10
Supersedes data of 1999 May 18
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
FEATURES
PINNING
PIN
• Total power dissipation: max. 250 mW
DESCRIPTION
• Three tolerance series: ±1%, ±2% and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
1
2
3
anode
not connected
cathode
• Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
• General regulation functions.
handbook, age
2
1
DESCRIPTION
2
n.c.
Low-power voltage regulator diodes in small SOT23
plastic SMD packages.
1
The diodes are available in the normalized E24 ±1%
(BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C)
tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V.
3
3
Top view
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
2003 Apr 10
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
MARKING
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
Marking codes for BZX84-A2V4 to BZX84-A75
BZX84-A2V4 Y50 or 50 BZX84-A6V2
BZX84-A2V7 Y51 or 51 BZX84-A6V8
BZX84-A3V0 Y52 or 52 BZX84-A7V5
Y60 or 60 BZX84-A16
Y61 or 61 BZX84-A18
Y62 or 62 BZX84-A20
Y63 or 63 BZX84-A22
Y64 or 64 BZX84-A24
Y65 or 65 BZX84-A27
Y66 or 04 BZX84-A30
Y67 or 67 BZX84-A33
Y68 or C0 BZX84-A36
Y69 or 69 BZX84-A39
Y70
Y71
BZX84-A43 Y80 or C5
BZX84-A47 Y81
Y72 or C2 BZX84-A51 Y82 or C6
BZX84-A3V3
Y53
BZX84-A8V2
Y73
Y74
BZX84-A56
BZX84-A62
Y83
Y84
Y85
BZX84-A3V6 Y54 or C1 BZX84-A9V1
BZX84-A3V9 Y55 or 55 BZX84-A10
BZX84-A4V3 Y56 or 56 BZX84-A11
BZX84-A4V7 Y57 or 57 BZX84-A12
BZX84-A5V1 Y58 or 58 BZX84-A13
BZX84-A5V6 Y59 or 59 BZX84-A15
Y75 or 75 BZX84-A68
Y76
BZX84-A75 Y86 or 86
Y77
−
−
−
−
−
−
Y78 or C3
Y79 or C4
Marking codes for BZX84-B2V4 to BZX84-B75
BZX84-B2V4 Z50 or Z0 BZX84-B6V2
BZX84-B2V7 Z51 or Z1 BZX84-B6V8
BZX84-B3V0 Z52 or S1 BZX84-B7V5
BZX84-B3V3 Z53 or S2 BZX84-B8V2
BZX84-B3V6 Z54 or S3 BZX84-B9V1
BZX84-B3V9 Z55 or S4 BZX84-B10
BZX84-B4V3 Z56 or S7 BZX84-B11
BZX84-B4V7 Z57 or S8 BZX84-B12
BZX84-B5V1 Z58 or R1 BZX84-B13
BZX84-B5V6 Z59 or R2 BZX84-B15
Z60 or R5 BZX84-B16
Z61 or R6 BZX84-B18
Z62 or R8 BZX84-B20
Z63 or R9 BZX84-B22
Z64 or T1 BZX84-B24
Z65 or 66 BZX84-B27
Z66 or Z6 BZX84-B30
Z67 or Z7 BZX84-B33
Z68 or Z8 BZX84-B36
Z69 or Z9 BZX84-B39
Z70 or 70 BZX84-B43 Z80 or S5
Z71 or 71 BZX84-B47 Z81 or S6
Z72 or 72 BZX84-B51 Z82 or S9
Z73 or 73 BZX84-B56 Z83 or R0
Z74 or 74 BZX84-B62 Z84 or R3
Z75 or Z5 BZX84-B68 Z85 or R4
Z76 or Z4 BZX84-B75 Z86 or R7
Z77 or Y1
Z78 or Y2
Z79 or S0
−
−
−
−
−
−
Marking codes for BZX84-C2V4 to BZX84-C75
BZX84-C2V4 Z11 or T3 BZX84-C6V2
BZX84-C2V7 Z12 or T4 BZX84-C6V8
BZX84-C3V0 Z13 or T9 BZX84-C7V5
BZX84-C3V3 Z14 or B1 BZX84-C8V2
BZX84-C3V6 Z15 or B2 BZX84-C9V1
BZX84-C3V9 Z16 or B3 BZX84-C10
BZX84-C4V3 Z17 or B6 BZX84-C11
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
BZX84-C16
BZX84-C18
BZX84-C20
BZX84-C22
BZX84-C24
BZX84-C27
BZX84-C30
BZX84-C33
BZX84-C36
BZX84-C39
Y5
Y6
Y7
Y8
Y9
BZX84-C43 Y15 or B4
BZX84-C47 Y16 or B5
BZX84-C51 Y17 or B7
BZX84-C56 Y18 or B8
BZX84-C62 Y19 or B9
Y10 or T2 BZX84-C68 Y20 or B0
Y11 or T5 BZX84-C75 Y21 or A1
BZX84-C4V7
BZX84-C5V1
BZX84-C5V6
Z1
Z2
Z3
BZX84-C12
BZX84-C13
BZX84-C15
Y12 or T6
Y13 or T7
Y14 or T8
−
−
−
−
−
−
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
2003 Apr 10
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
IF
PARAMETER
CONDITIONS
MIN.
MAX.
200
UNIT
mA
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Tables
1 and 2
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
−
250
40
mW
W
PZSM
non-repetitive peak reverse power tp = 100 µs; square wave;
dissipation
Tj = 25 °C prior to surge; see Fig.2
Tstg
Tj
storage temperature
junction temperature
−65
−65
+150
+150
°C
°C
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.3
0.9
V
IR
reverse current
BZX84-A/B/C2V4
BZX84-A/B/C2V7
BZX84-A/B/C3V0
BZX84-A/B/C3V3
BZX84-A/B/C3V6
BZX84-A/B/C3V9
BZX84-A/B/C4V3
BZX84-A/B/C4V7
BZX84-A/B/C5V1
BZX84-A/B/C5V6
BZX84-A/B/C6V2
BZX84-A/B/C6V8
BZX84-A/B/C7V5
BZX84-A/B/C8V2
BZX84-A/B/C9V1
BZX84-A/B/C10
BZX84-A/B/C11
BZX84-A/B/C12
BZX84-A/B/C13
BZX84-A/B/C15 to 75
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
50
20
10
5
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
2003 Apr 10
4
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Table 1 Per type BZX84-A/B/C2V4 to A/B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 4 and 5)
DIODE CAP. NON-REPETITIVE
Cd (pF)
at f = 1 MHz;
VR = 0 V
PEAK REVERSE
CURRENT
BZX84-
Axxx
Bxxx
at IZtest = 5 mA
IZSM (A)
Tol. approx.
±5% (C)
at
at
at tp = 100 µs;
Tol. ±1% (A)
Tol. ±2% (B)
Cxxx
IZtest = 1 mA IZtest = 5 mA
Tamb = 25 °C
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.37
2.67
2.97
3.26
3.56
3.86
4.25
4.65
5.04
5.54
6.13
6.73
7.42
8.11
9.00
9.90
2.43
2.73
3.03
3.34
3.64
3.94
4.35
4.75
5.16
5.66
6.27
6.87
7.58
8.29
9.20
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
2.6
275
300
325
350
375
400
410
425
400
80
600
600
600
600
600
600
600
500
480
400
150
80
70
75
80
85
85
85
80
50
40
15
6
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
−3.5 −1.6
−3.5 −2.0
−3.5 −2.1
−3.5 −2.4
−3.5 −2.4
−3.5 −2.5
−3.5 −2.5
0
0
0
0
0
0
0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
2.9
3.2
3.5
3.8
4.1
4.6
5.0
−3.5 −1.4 0.2
−2.7 −0.8 1.2
5.4
6.0
−2.0 1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
6.6
40
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
7.2
30
6
7.9
30
80
6
8.7
40
80
6
9.6
40
100
150
150
150
170
200
200
225
225
250
250
6
10.10 9.80
10.20 9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
50
8
11
10.80 11.11 10.80 11.20 10.4
11.88 12.12 11.80 12.20 11.4
12.87 13.13 12.70 13.30 12.4
14.85 15.15 14.70 15.30 13.8
15.84 16.16 15.70 16.30 15.3
17.82 18.18 17.60 18.40 16.8
19.80 20.20 19.60 20.40 18.8
21.78 22.22 21.60 22.40 20.8
23.76 24.24 23.50 24.50 22.8
50
10
10
10
10
10
10
15
20
25
85
12
50
10.0 85
11.0 80
13
50
15
50
11.4 13.0 75
16
50
10.4 12.4 14.0 75
12.4 14.4 16.0 70
14.4 16.4 18.0 60
16.4 18.4 20.0 60
18.4 20.4 22.0 55
18
50
20
60
22
60
1.25
1.25
24
60
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Table 2 Per type BZX84-A/B/C27 to A/B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 4 and 5)
DIODE CAP. NON-REPETITIVE
Cd (pF)
at f = 1 MHz;
VR = 0 V
PEAK REVERSE
CURRENT
BZX84-
Axxx
Bxxx
at IZtest = 2 mA
IZSM (A)
Tol. approx.
±5% (C)
at
at
at tp = 100 µs;
Tol. ±1% (A)
Tol. ±2% (B)
Cxxx
IZtest = 0.5 mA IZtest = 2 mA
Tamb = 25 °C
MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
26.73 27.27 26.50 27.50 25.1
29.70 30.30 29.40 30.60 28.0
32.67 33.33 32.30 33.70 31.0
35.64 36.36 35.30 36.70 34.0
38.61 39.39 38.20 39.80 37.0
42.57 43.43 42.10 43.90 40.0
46.53 47.47 46.10 47.90 44.0
50.49 51.51 50.00 52.00 48.0
55.44 56.56 54.90 57.10 52.0
61.38 62.62 60.80 63.20 58.0
67.32 68.68 66.60 69.40 64.0
74.25 75.75 73.50 76.50 70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
65
300
300
325
350
350
375
375
400
425
450
475
500
25
30
35
35
40
45
50
60
70
80
90
95
80
21.4 23.4 25.3 50
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
70
80
24.4 26.6 29.4 50
27.4 29.7 33.4 45
30.4 33.0 37.4 45
33.4 36.4 41.2 45
37.6 41.2 46.6 40
42.0 46.1 51.8 40
46.6 51.0 57.2 40
52.2 57.0 63.8 40
58.8 64.4 71.6 35
65.6 71.7 79.8 35
73.4 80.2 88.6 35
75
80
80
90
80
130
150
170
180
200
215
240
255
85
85
90
100
120
150
170
0.25
0.2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
330
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
500
Note
1. Device mounted on an FR4 printed circuit-board.
2003 Apr 10
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
GRAPHICAL DATA
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
200
10
(1)
10
100
(2)
0
0.6
1
10
0.8
1
−1
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.3 Forward current as a function of forward
voltage; typical values.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
S
Z
(mV/K)
S
Z
11
4V3
(mV/K)
10
9V1
−1
5
3V9
8V2
7V5
6V8
3V6
6V2
5V6
5V1
−2
0
3V3
4V7
3V0
2V4
2V7
−3
−5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZX84-A/B/C2V4 to A/B/C4V3.
BZX84-A/B/C4V7 to A/B/C12.
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
Fig.5 Temperature coefficient as a function of
working current; typical values.
2003 Apr 10
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Apr 10
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Apr 10
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
NOTES
2003 Apr 10
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
613514/03/pp12
Date of release: 2003 Apr 10
Document order number: 9397 750 10959
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