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BZX84J-B16 [NXP]

Single Zener diodes; 单齐纳二极管
BZX84J-B16
型号： BZX84J-B16
厂家： NXP    NXP
描述：

Single Zener diodes
单齐纳二极管

二极管 齐纳二极管
文件： 总12页 (文件大小：75K)
中文：  中文翻译
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BZX84J series  
Single Zener diodes  
Rev. 01 — 1 March 2007  
Product data sheet  
1. Product profile  
1.1 General description  
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead  
Surface-Mounted Device (SMD) plastic package.  
1.2 Features  
I Non-repetitive peak reverse power  
I Wide working voltage range: nominal  
2.4 V to 75 V (E24 range)  
dissipation: ≤ 40 W  
I Total power dissipation: ≤ 550 mW  
I Two tolerance series: ±2 % and ±5 %  
I Low differential resistance  
I Small plastic package suitable for  
surface-mounted design  
1.3 Applications  
I General regulation functions  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
1.1  
40  
Unit  
V
[1]  
[2]  
VF  
forward voltage  
IF = 100 mA  
-
-
-
-
PZSM  
non-repetitive peak reverse  
power dissipation  
W
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.  
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Symbol  
[1]  
1
2
2
anode  
2
1
006aaa152  
[1] The marking bar indicates the cathode.  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
plastic surface-mounted package; 2 leads  
Version  
BZX84J-B2V4 to  
BZX84J-C75[1]  
SC-90  
SOD323F  
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking  
code  
Type number  
Marking  
code  
Type number  
Marking  
code  
Type number  
Marking  
code  
BZX84J-B2V4  
BZX84J-B2V7  
BZX84J-B3V0  
BZX84J-B3V3  
BZX84J-B3V6  
BZX84J-B3V9  
BZX84J-B4V3  
BZX84J-B4V7  
BZX84J-B5V1  
BZX84J-B5V6  
BZX84J-B6V2  
BZX84J-B6V8  
BZX84J-B7V5  
BZX84J-B8V2  
BZX84J-B9V1  
BZX84J-B10  
BZX84J-B11  
BZX84J-B12  
BZX84J-B13  
SL  
SM  
ST  
SU  
SV  
SW  
SZ  
TA  
BZX84J-B15  
BZX84J-B16  
BZX84J-B18  
BZX84J-B20  
BZX84J-B22  
BZX84J-B24  
BZX84J-B27  
BZX84J-B30  
BZX84J-B33  
BZX84J-B36  
BZX84J-B39  
BZX84J-B43  
BZX84J-B47  
BZX84J-B51  
BZX84J-B56  
BZX84J-B62  
BZX84J-B68  
BZX84J-B75  
-
SC  
SD  
SE  
SF  
SG  
SH  
SK  
SN  
SP  
SR  
SS  
SX  
SY  
TB  
TC  
TF  
TG  
TL  
BZX84J-C2V4  
BZX84J-C2V7  
BZX84J-C3V0  
BZX84J-C3V3  
BZX84J-C3V6  
BZX84J-C3V9  
BZX84J-C4V3  
BZX84J-C4V7  
BZX84J-C5V1  
BZX84J-C5V6  
BZX84J-C6V2  
BZX84J-C6V8  
BZX84J-C7V5  
BZX84J-C8V2  
BZX84J-C9V1  
BZX84J-C10  
BZX84J-C11  
BZX84J-C12  
BZX84J-C13  
U3  
U4  
U9  
UA  
UB  
UC  
UF  
UG  
UL  
UM  
UR  
US  
UU  
UV  
UW  
TR  
TS  
TT  
BZX84J-C15  
BZX84J-C16  
BZX84J-C18  
BZX84J-C20  
BZX84J-C22  
BZX84J-C24  
BZX84J-C27  
BZX84J-C30  
BZX84J-C33  
BZX84J-C36  
BZX84J-C39  
BZX84J-C43  
BZX84J-C47  
BZX84J-C51  
BZX84J-C56  
BZX84J-C62  
BZX84J-C68  
BZX84J-C75  
-
TV  
TW  
TX  
TY  
TZ  
U1  
U2  
U5  
U6  
U7  
U8  
UD  
UE  
UH  
UK  
UN  
UP  
UT  
-
TD  
TE  
TH  
TK  
TM  
TN  
TP  
S8  
S9  
SA  
SB  
-
TU  
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
2 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
IF  
Parameter  
Conditions  
Min  
Max  
Unit  
forward current  
-
-
250  
mA  
[1]  
IZSM  
non-repetitive peak reverse  
current  
see  
Table 8  
and 9  
[1]  
[2]  
PZSM  
non-repetitive peak reverse  
power dissipation  
-
40  
W
Ptot  
Tj  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
Tamb ≤ 25 °C  
-
550  
mW  
°C  
-
150  
Tamb  
Tstg  
−65  
−65  
+150  
+150  
°C  
°C  
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
cathode 1 cm2.  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
[2]  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
-
-
230  
K/W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
-
-
55  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[2] Soldering point of cathode tab.  
7. Characteristics  
Table 7.  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
VF  
forward voltage  
IF = 10 mA  
-
-
-
-
0.9  
1.1  
V
IF = 100 mA  
V
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.  
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
3 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
Table 8.  
Characteristics per type; BZX84J-B2V4 to BZX84J-C24  
Tj = 25 °C unless otherwise specified.  
BZX84J Sel  
-xxx  
Working  
voltage  
Differential  
resistance  
Reverse  
current  
Temperature  
coefficient  
Diode  
Non-repetitive  
capacitance peak reverse  
current  
IZSM (A)[2]  
VZ (V)  
rdif (Ω)  
IR (µA)  
SZ (mV/K)  
Cd (pF)[1]  
IZ = 5 mA  
IZ = 1 mA IZ = 5 mA  
IZ = 5 mA  
Max  
Min  
2.35  
2.2  
Max  
Max  
Max  
Max  
VR (V) Min  
Max  
Max  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
2.45  
2.6  
400  
100  
50  
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−2.7  
−2  
0
450  
12  
2.65  
2.5  
2.75  
2.9  
450  
500  
500  
500  
500  
600  
500  
480  
400  
150  
80  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
10  
10  
10  
10  
10  
10  
20  
10  
5
0
440  
425  
410  
390  
370  
350  
325  
300  
275  
250  
215  
170  
150  
120  
110  
108  
105  
12  
12  
12  
12  
12  
12  
12  
12  
12  
12  
12  
4
2.94  
2.8  
3.06  
3.2  
0
3.23  
3.1  
3.37  
3.5  
0
3.53  
3.4  
3.67  
3.8  
5
0
3.82  
3.7  
3.98  
4.1  
3
0
4.21  
4
4.39  
4.6  
3
0
4.61  
4.4  
4.79  
5
3
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7
5
5.2  
2
4.8  
5.4  
5.49  
5.2  
5.71  
6
1
6.08  
5.8  
6.32  
6.6  
3
0.4  
6.66  
6.4  
6.94  
7.2  
2
1.2  
7.35  
7
7.65  
7.9  
80  
1
2.5  
8.04  
7.7  
8.36  
8.7  
80  
0.7  
0.5  
0.2  
0.1  
0.1  
3.2  
4
8.92  
8.5  
9.28  
9.6  
100  
150  
150  
150  
3.8  
3
9.8  
10.2  
10.6  
11.2  
11.6  
12.2  
12.7  
4.5  
8
3
9.4  
11  
10.8  
10.4  
11.8  
11.4  
5.4  
9
2.5  
2.5  
12  
6
10  
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
4 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
Table 8.  
Characteristics per type; BZX84J-B2V4 to BZX84J-C24 …continued  
Tj = 25 °C unless otherwise specified.  
BZX84J Sel  
-xxx  
Working  
voltage  
Differential  
resistance  
Reverse  
current  
Temperature  
coefficient  
Diode  
Non-repetitive  
capacitance peak reverse  
current  
IZSM (A)[2]  
VZ (V)  
rdif (Ω)  
IR (µA)  
SZ (mV/K)  
Cd (pF)[1]  
IZ = 5 mA  
IZ = 1 mA IZ = 5 mA  
IZ = 5 mA  
Max  
Min  
Max  
Max  
Max  
Max  
VR (V) Min  
Max  
Max  
13  
15  
16  
18  
20  
22  
24  
B
C
B
C
B
C
B
C
B
C
B
C
B
C
12.7  
12.4  
14.7  
13.8  
15.7  
15.3  
17.6  
16.8  
19.6  
18.8  
21.6  
20.8  
23.5  
22.8  
13.3  
14.1  
15.3  
15.6  
16.3  
17.1  
18.4  
19.1  
20.4  
21.2  
22.4  
23.3  
24.5  
25.6  
170  
10  
0.1  
8
7
11  
13  
14  
16  
18  
20  
22  
103  
2.5  
200  
200  
225  
225  
250  
250  
15  
20  
20  
20  
25  
30  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
10.5  
11.2  
12.6  
14  
9.2  
99  
97  
93  
88  
84  
80  
2
10.4  
12.4  
14.4  
16.4  
18.4  
1.5  
1.5  
1.5  
1.25  
1.25  
15.4  
16.8  
[1] f = 1 MHz; VR = 0 V  
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
5 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
Table 9.  
Characteristics per type; BZX84J-B27 to BZX84J-C75  
Tj = 25 °C unless otherwise specified.  
BZX84J- Sel  
xxx  
Working  
voltage  
Differential  
resistance  
Reverse  
current  
Temperature Diode  
Non-repetitive  
coefficient  
capacitance peak reverse  
current  
IZSM (A)[2]  
VZ (V)  
rdif (Ω)  
IR (µA)  
SZ (mV/K)  
Cd (pF)[1]  
IZ = 2 mA  
IZ = 0.5 mA IZ = 2 mA  
IZ = 2 mA  
Min  
26.5  
25.1  
29.4  
28  
Max  
Max  
Max  
Max  
VR (V) Min  
Max  
Max  
Max  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
27.5  
28.9  
30.6  
32  
250  
40  
0.05  
18.9  
21.4  
24.4  
27.4  
30.4  
33.4  
37.6  
42  
25.3  
29.4  
33.4  
37.4  
41.2  
46.6  
51.8  
57.2  
63.8  
71.6  
79.8  
88.6  
73  
1
250  
275  
300  
300  
325  
325  
350  
375  
400  
400  
400  
40  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
21  
66  
60  
59  
58  
56  
55  
52  
49  
44  
40  
35  
1
32.3  
31  
33.7  
35  
40  
23.1  
25.2  
27.3  
30.1  
32.9  
35.7  
39.2  
43.4  
47.6  
52.5  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.3  
0.25  
0.2  
35.3  
34  
36.7  
38  
60  
38.2  
37  
39.8  
41  
75  
42.1  
40  
43.9  
46  
80  
46.1  
44  
47.9  
50  
90  
50  
52  
110  
120  
140  
160  
175  
46.6  
52.2  
58.8  
65.6  
73.4  
48  
54  
54.9  
52  
57.1  
60  
60.8  
58  
63.2  
66  
66.6  
64  
69.4  
72  
73.5  
70  
76.5  
79  
[1] f = 1 MHz; VR = 0 V  
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
6 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
mbg801  
mbg781  
3
10  
300  
P
I
ZSM  
F
(W)  
(mA)  
2
200  
10  
(1)  
(2)  
10  
100  
1
10  
0
0.6  
−1  
0.8  
1
1
10  
t
(ms)  
V
(V)  
p
F
(1) Tj = 25 °C (prior to surge)  
(2) Tj = 150 °C (prior to surge)  
Tj = 25 °C  
Fig 1. Non-repetitive peak reverse power dissipation  
as a function of pulse duration; maximum  
values  
Fig 2. Forward current as a function of forward  
voltage; typical values  
mld444  
mld445  
0.5  
12  
S
15  
Z
S
Z
(mV/K)  
4V7  
(mV/K)  
13  
12  
0
8
11  
10  
4V3  
−0.5  
−1  
9V1  
8V2  
7V5  
6V8  
6V2  
2V4  
4
0
2V7  
3V9  
3V6  
5V6  
5V1  
−1.5  
−2  
3V3  
3V0  
−4  
10  
−1  
2
−1  
2
10  
1
10  
10  
1
10  
10  
I
(mA)  
I
(mA)  
Z
Z
BZX84J-B/C2V4 to BZX84J-B/C4V7  
BZX84J-B/C5V1 to BZX84J-B/C15  
Tj = 25 °C to 150 °C  
Tj = 25 °C to 150 °C  
Fig 3. Temperature coefficient as a function of  
working current; typical values  
Fig 4. Temperature coefficient as a function of  
working current; typical values  
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
7 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
006aaa996  
006aaa997  
50  
30  
V
(V) = 10  
V
(V) = 2.7  
Z(nom)  
Z(nom)  
I
Z
I
Z
(mA)  
3.3  
3.9  
4.7  
5.6  
(mA)  
25  
40  
12  
20  
15  
10  
5
6.8  
8.2  
30  
20  
10  
0
15  
18 22  
27  
33 36  
0
0
2
4
6
8
10  
0
10  
20  
30  
40  
V
(V)  
V (V)  
Z
Z
Tj = 25 °C  
BZX84J-B/C2V7 to BZX84J-B/C8V2  
All curves have a test current IZ = 5 mA.  
Tj = 25 °C  
BZX84J-B/C10 to BZX84J-B/C36  
For the curves VZ(nom) = (10, 12, 15, 18, 22) V the  
test current IZ = 5 mA.  
For the curves VZ(nom) = (27, 33, 36) V the test  
current IZ = 2 mA.  
Fig 5. Working current as a function of working  
voltage; typical values  
Fig 6. Working current as a function of working  
voltage; typical values  
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
8 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
8. Package outline  
1.35  
1.15  
0.80  
0.65  
0.5  
0.3  
1
2.7 1.8  
2.3 1.6  
2
0.40  
0.25  
0.25  
0.10  
Dimensions in mm  
04-09-13  
Fig 7. Package outline SOD323F (SC-90)  
9. Packing information  
Table 10. Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number Package Description  
Packing quantity  
3000  
10000  
BZX84J-B2V4 to SOD323F 4 mm pitch, 8 mm tape and reel  
BZX84J-C75  
-115  
-135  
[1] For further information and the availability of packing methods, see Section 13.  
10. Soldering  
3.05  
2.80  
2.10  
1.60  
solder lands  
solder resist  
occupied area  
solder paste  
1.65 0.95  
0.50 0.60  
msa433  
0.50  
(2×)  
Reflow soldering is the only recommended soldering method.  
Dimensions in mm  
Fig 8. Reflow soldering footprint SOD323F (SC-90)  
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
9 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
11. Revision history  
Table 11. Revision history  
Document ID  
Release date  
20070301  
Data sheet status  
Change notice  
Supersedes  
BZX84J_SER_1  
Product data sheet  
-
-
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
10 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of a NXP Semiconductors product can reasonably be expected to  
12.2 Definitions  
result in personal injury, death or severe property or environmental damage.  
NXP Semiconductors accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or applications and therefore  
such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
12.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
13. Contact information  
For additional information, please visit: http://www.nxp.com  
For sales office addresses, send an email to: salesaddresses@nxp.com  
BZX84J_SER_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 1 March 2007  
11 of 12  
BZX84J series  
NXP Semiconductors  
Single Zener diodes  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Packing information. . . . . . . . . . . . . . . . . . . . . . 9  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
3
4
5
6
7
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 11  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2007.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 1 March 2007  
Document identifier: BZX84J_SER_1  

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