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BZX884-B3V0 [NXP]

Voltage regulator diodes; 稳压二极管
BZX884-B3V0
型号： BZX884-B3V0
厂家： NXP    NXP
描述：

Voltage regulator diodes
稳压二极管

稳压二极管
文件： 总10页 (文件大小：69K)
中文：  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BZX884 series  
Voltage regulator diodes  
Product specification  
2004 Mar 26  
Supersedes data of 2003 May 15  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX884 series  
FEATURES  
DESCRIPTION  
• Two tolerance series: ±2% and ±5%  
Low-power voltage regulator diodes encapsulated in  
SOD882 leadless ultra small plastic packages.  
• Working voltage range: nominal 2.4 V to 75 V  
(E24 range)  
• Leadless ultra small plastic package  
(1 mm × 0.6 mm × 0.5 mm)  
• Boardspace 1.17 mm2 (approximately 10% of SOT23)  
handbook, halfpage  
• Power dissipation comparable to SOT23.  
APPLICATIONS  
Bottom view  
MAM472  
• General regulation functions  
• ESD ultra high-speed switching  
• High frequency applications  
The marking bar indicates the cathode.  
• Mobile communication, digital (still) cameras, PDAs and  
PCMCIA cards.  
Fig.1 Simplified outline (SOD882) and symbol.  
MARKING  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
Marking codes for BZX884-B2V4 to BZX884-B75  
BZX884-B2V4  
BZX884-B2V7  
BZX884-B3V0  
BZX884-B3V3  
BZX884-B3V6  
BZX884-B3V9  
BZX884-B4V3  
BZX884-B4V7  
BZX884-B5V1  
BZX884-B5V6  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
A9  
AA  
BZX884-B6V2  
BZX884-B6V8  
BZX884-B7V5  
BZX884-B8V2  
BZX884-B9V1  
BZX884-B10  
BZX884-B11  
BZX884-B12  
BZX884-B13  
BZX884-B15  
AB  
AC  
AD  
AE  
AF  
AG  
AH  
AJ  
BZX884-B16  
BZX884-B18  
BZX884-B20  
BZX884-B22  
BZX884-B24  
BZX884-B27  
BZX884-B30  
BZX884-B33  
BZX884-B36  
BZX884-B39  
C1  
C2  
C3  
C4  
C5  
C6  
C7  
C8  
C9  
CA  
BZX884-B43  
BZX884-B47  
BZX884-B51  
BZX884-B56  
BZX884-B62  
BZX884-B68  
BZX884-B75  
CB  
CC  
CD  
CE  
CF  
CG  
CH  
AK  
AL  
Marking codes for BZX884-C2V4 to BZX884-C75  
BZX884-C2V4  
BZX884-C2V7  
BZX884-C3V0  
BZX884-C3V3  
BZX884-C3V6  
BZX884-C3V9  
BZX884-C4V3  
BZX884-C4V7  
BZX884-C5V1  
BZX884-C5V6  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
B8  
B9  
BA  
BZX884-C6V2  
BZX884-C6V8  
BZX884-C7V5  
BZX884-C8V2  
BZX884-C9V1  
BZX884-C10  
BZX884-C11  
BZX884-C12  
BZX884-C13  
BZX884-C15  
BB  
BC  
BD  
BE  
BF  
BG  
BH  
BJ  
BZX884-C16  
BZX884-C18  
BZX884-C20  
BZX884-C22  
BZX884-C24  
BZX884-C27  
BZX884-C30  
BZX884-C33  
BZX884-C36  
BZX884-C39  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
D9  
DA  
BZX884-C43  
BZX884-C47  
BZX884-C51  
BZX884-C56  
BZX884-C62  
BZX884-C68  
BZX884-C75  
DB  
DC  
DD  
DE  
DF  
DG  
DH  
BK  
BL  
2004 Mar 26  
2
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX884 series  
ORDERING INFORMATION  
TYPE  
PACKAGE  
NUMBER  
NAME  
DESCRIPTION  
VERSION  
BZX884-B2V4  
to  
BZX884-B75  
−
−
Leadless ultra small plastic package;2 terminals; body 1.0 x  
0.6 x 0.5 mm  
SOD882  
BZX884-C2V4  
to  
Leadless ultra small plastic package;2 terminals; body 1.0 x  
0.6 x 0.5 mm  
SOD882  
BZX884-C75  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
200  
UNIT  
IF  
continuous forward current  
−
mA  
IZSM  
non-repetitive peak reverse  
current  
tp = 100 µs; square wave;  
Tamb = 25 °C; prior to surge  
see Tables 1 and  
2
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 25 °C; note 1  
−
250  
mW  
°C  
−65  
−
+150  
150  
°C  
Note  
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth(j-a)  
Note  
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
K/W  
thermal resistance from junction to ambient  
note 1  
500  
2004 Mar 26  
3
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX884 series  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MAX.  
UNIT  
VF  
IR  
IF = 10 mA; see Fig.2  
0.9  
V
reverse current  
BZX884-B/C2V4  
BZX884-B/C2V7  
BZX884-B/C3V0  
BZX884-B/C3V3  
BZX884-B/C3V6  
BZX884-B/C3V9  
BZX884-B/C4V3  
BZX884-B/C4V7  
BZX884-B/C5V1  
BZX884-B/C5V6  
BZX884-B/C6V2  
BZX884-B/C6V8  
BZX884-B/C7V5  
BZX884-B/C8V2  
BZX884-B/C9V1  
BZX884-B/C10  
BZX884-B/C11  
BZX884-B/C12  
BZX884-B/C13  
BZX884-B/C15 to 75  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 2 V  
VR = 2 V  
VR = 2 V  
VR = 4 V  
VR = 4 V  
VR = 5 V  
VR = 5 V  
VR = 6 V  
VR = 7 V  
VR = 8 V  
VR = 8 V  
VR = 8 V  
VR = 0.7 VZnom  
50  
20  
10  
5
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
5
3
3
3
2
1
3
2
1
700  
500  
200  
100  
100  
100  
50  
2004 Mar 26  
4
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Table 1 Per type BZX884-B/C2V4 to B/C24  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
TEMP. COEFF.  
SZ (mV/K)  
at IZtest = 5 mA  
(see Figs 3 and 4)  
DIODE CAP.  
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
IZSM (A) at tp = 100 µs;  
Tamb = 25 °C  
DIFFERENTIAL RESISTANCE  
VZ (V)  
at IZ = 5 mA  
rdif (Ω)  
BZX884-  
B or C  
XXX  
Tol. ±2% (B)  
Tol. ±5% (C)  
at IZtest = 1 mA  
TYP. MAX.  
275 400  
at IZtest = 5 mA  
TYP. MAX.  
70 100  
MIN. MAX. MIN. MAX.  
TYP.  
MAX.  
MAX.  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
2.35  
2.65  
2.94  
3.23  
3.53  
3.82  
4.21  
4.61  
5.00  
5.49  
6.08  
6.66  
7.35  
8.04  
8.92  
9.80  
2.45  
2.75  
3.06  
3.37  
3.67  
3.98  
4.39  
4.79  
5.20  
5.71  
6.32  
6.94  
7.65  
8.36  
9.28  
2.28  
2.57  
2.85  
3.14  
3.42  
3.71  
4.09  
4.47  
4.85  
5.32  
5.89  
6.46  
7.13  
7.79  
8.65  
2.52  
2.84  
3.15  
3.47  
3.78  
4.10  
4.52  
4.94  
5.36  
5.88  
6.51  
7.14  
7.88  
8.61  
9.56  
−1.3  
−1.4  
−1.6  
−1.8  
−1.9  
−1.9  
−1.7  
−1.2  
−0.5  
1.0  
450  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
1.5  
1.5  
1.5  
1.25  
1.25  
300  
325  
350  
375  
400  
410  
425  
400  
80  
450  
500  
500  
500  
500  
600  
500  
480  
400  
150  
80  
75  
80  
85  
85  
85  
80  
50  
40  
15  
6
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
10  
10  
10  
10  
10  
10  
10  
15  
40  
45  
55  
55  
70  
440  
425  
410  
390  
370  
350  
325  
300  
275  
250  
215  
170  
150  
120  
110  
110  
105  
105  
100  
90  
40  
2.2  
30  
6
3.0  
15  
80  
2
3.6  
20  
80  
2
4.3  
20  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
2
5.2  
10.20 9.50  
10.50 20  
2
6.0  
11  
10.78 11.22 10.45 11.55 25  
11.76 12.24 11.40 12.60 25  
12.74 13.26 12.35 13.65 25  
14.70 15.30 14.25 15.75 25  
15.68 18.32 15.20 16.80 50  
17.64 18.36 17.10 18.90 50  
19.60 20.40 19.00 21.00 60  
21.56 22.44 20.90 23.10 60  
23.52 24.48 22.80 25.20 60  
2
6.9  
12  
2
7.9  
13  
2
8.8  
15  
3
10.7  
12.4  
14.4  
16.4  
18.4  
20.4  
16  
10  
10  
15  
20  
25  
18  
80  
20  
70  
22  
60  
24  
55  
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Table 2 Per type BZX884-B/C27 to B/C75  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
TEMP. COEFF.  
SZ (mV/K)  
at IZtest = 2 mA  
(see Figs 3 and 4)  
DIODE CAP.  
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
IZSM (A) at tp = 100 µs;  
Tamb = 25 °C  
DIFFERENTIAL RESISTANCE  
VZ (V)  
at IZ = 2 mA  
rdif (Ω)  
BZX884-  
B or C  
XXX  
Tol. ±2% (B)  
Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA  
TYP. MAX. TYP. MAX.  
300 25 80  
MIN. MAX. MIN. MAX.  
TYP.  
23.4  
MAX.  
MAX.  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
26.46 27.54 25.65 28.35 65  
29.40 30.60 28.50 31.50 70  
32.34 33.66 31.35 34.65 75  
35.28 36.72 34.20 37.80 80  
38.22 39.78 37.05 40.95 80  
42.14 43.86 40.85 45.15 85  
46.06 47.94 44.65 49.35 85  
49.98 52.02 48.45 53.55 90  
54.88 57.12 53.20 58.80 100  
60.76 63.24 58.90 65.10 120  
66.64 69.36 64.60 71.40 150  
73.50 76.50 71.25 78.75 170  
50  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.3  
0.25  
0.2  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
30  
35  
35  
40  
45  
50  
60  
70  
80  
90  
95  
80  
26.6  
50  
45  
45  
45  
40  
40  
40  
40  
35  
35  
35  
80  
29.7  
90  
33.0  
130  
150  
170  
180  
200  
215  
240  
255  
36.4  
41.2  
46.1  
51.0  
57.0  
64.4  
71.7  
80.2  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX884 series  
GRAPHICAL DATA  
MLD444  
MBG781  
0.5  
300  
handbook, halfpage  
handbook, halfpage  
S
Z
(mV/K)  
0
4V7  
I
F
(mA)  
4V3  
200  
−0.5  
2V4  
2V7  
3V9  
3V6  
−1  
−1.5  
−2  
100  
3V3  
3V0  
0
0.6  
−1  
2
10  
1
10  
10  
0.8  
1
V
(V)  
I
(mA)  
F
Z
BZX884-B/C2V4 to B/C4V7.  
Tj = 25 °C.  
Tj = 25 to 150 °C.  
Fig.2 Forward current as a function of forward  
voltage; typical values.  
Fig.3 Temperature coefficient as a function of  
working current; typical values.  
MLD445  
12  
handbook, halfpage  
15  
S
Z
(mV/K)  
13  
12  
8
11  
10  
9V1  
8V2  
4
0
7V5  
6V8  
6V2  
5V6  
5V1  
−4  
10  
−1  
2
1
10  
10  
I
(mA)  
Z
BZX884-B/C5V1 to B/C15.  
Tj = 25 to 150 °C.  
Fig.4 Temperature coefficient as a function of  
working current; typical values.  
2004 Mar 26  
7
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX884 series  
PACKAGE OUTLINE  
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm  
SOD882  
L
L
1
2
b
e
1
A
A
1
E
D
(2)  
0
0.5  
1 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
1
UNIT  
A
b
D
E
e
L
1
max.  
0.50  
0.46  
0.55 0.62 1.02  
0.47 0.55 0.95  
0.30  
0.22  
mm  
0.03  
0.65  
Notes  
1. Including plating thickness  
2. The marking bar indicates the cathode  
REFERENCES  
JEDEC  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEITA  
03-04-16  
03-04-17  
SOD882  
2004 Mar 26  
8
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX884 series  
SOLDERING  
Reflow soldering is the only recommended soldering method.  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Mar 26  
9
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R76/02/pp10  
Date of release: 2004 Mar 26  
Document order number: 9397 750 12713  

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SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

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SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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