CGD1044HI [NXP]
1 GHz, 25 dB gain GaAs high output power doubler; 1 GHz的25 dB增益砷化镓高输出功率倍增型号: | CGD1044HI |
厂家: | NXP |
描述: | 1 GHz, 25 dB gain GaAs high output power doubler |
文件: | 总7页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CGD1044HI
1 GHz, 25 dB gain GaAs high output power doubler
Rev. 01 — 21 September 2009
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features
I Excellent linearity
I Superior levels of ESD protection
I Extremely low noise
I Excellent return loss properties
I Gain compensation over temperature
I Rugged construction
I Unconditionally stable
I Thermally optimized design
I Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
I Integrated ring wave surge protection
1.3 Applications
I CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
Table 1.
Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb = 35 °C; unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
23.2 - dB
23.5 24.4 25.5 dB
Gp
power gain
f = 50 MHz
-
f = 1003 MHz
[1]
[1]
[2]
CTB
CCN
Itot
composite triple beat
Vo = 56.4 dBmV at 1003 MHz
-
−75 −69 dBc
63 dBc
440 460 mA
carrier-to-composite noise Vo = 56.4 dBmV at 1003 MHz
total current
57
-
-
[1] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
[2] Direct Current (DC).
CGD1044HI
NXP Semiconductors
1 GHz, 25 dB gain GaAs high output power doubler
2. Pinning information
Table 2.
Pinning
Pin
1
Description
input
Simplified outline
Graphic symbol
5
2, 3
5
common
+VB
1 3 5 7 9
1
9
7, 8
9
common
output
2
3
7
8
sym095
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
CGD1044HI
-
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VB
supply voltage
-
-
-
30
V
Vi(RF)
VESD
RF input voltage
single tone
75
dBmV
V
[1]
electrostatic discharge voltage Human Body Model (HBM);
According JEDEC standard
2000
22-A114E
Biased; According
IEC61000-4-2
-
1500
V
Tstg
Tmb
storage temperature
−40 +100 °C
−20 +100 °C
mounting base temperature
[1] The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.
CGD1044HI_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 21 September 2009
2 of 7
CGD1044HI
NXP Semiconductors
1 GHz, 25 dB gain GaAs high output power doubler
5. Characteristics
Table 5.
Characteristics
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb = 35 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
23.2
23.5 24.4
Max Unit
dB
25.5 dB
Gp
power gain
f = 50 MHz
-
-
f = 1003 MHz
[1]
[2]
SLsl
FL
slope straight line
f = 40 MHz to 1003 MHz
f = 40 MHz to 1003 MHz
f = 40 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 870 MHz
f = 870 MHz to 1003 MHz
f = 40 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 870 MHz
f = 870 MHz to 1003 MHz
f = 50 MHz
0.5
-
-
2
1
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
flatness of frequency response
input return loss
-
RLin
20
20
19
17
16
20
20
19
18
17
-
-
-
-
-
-
-
-
-
-
RLout
output return loss
-
-
-
-
-
-
-
-
-
-
NF
Itot
noise figure
total current
4.5
5
5.5
6
f = 1003 MHz
-
[3]
-
440
460 mA
79 NTSC channels + 75 digital channels
[4]
[4]
[4]
[4]
CTB
composite triple beat
Vo = 56.4 dBmV at 1003 MHz
-
−75
−77
−68
63
−69 dBc
−65 dBc
CSO
Xmod
CCN
composite second-order distortion Vo = 56.4 dBmV at 1003 MHz
-
cross modulation
Vo = 56.4 dBmV at 1003 MHz
Vo = 56.4 dBmV at 1003 MHz
-
-
-
dB
carrier-to-composite noise
57
dBc
79 NTSC channels
[5]
[5]
[5]
CTB
composite triple beat
Vo = 58.4 dBmV at 1003 MHz
-
-
-
−70
−75
−64
-
-
-
dBc
dBc
dB
CSO
Xmod
composite second-order distortion Vo = 58.4 dBmV at 1003 MHz
cross modulation
Vo = 58.4 dBmV at 1003 MHz
[1] Gp at 1003 MHz minus Gp at 40 MHz.
[2] Flatness is defined as peak deviation to straight line.
[3] Direct Current (DC).
[4] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset); tilt extrapolated to 13.5 dB
at 1003 MHz.
[5] 79 NTSC channels [f = 54 MHz to 550 MHz]; tilt extrapolated to 13.5 dB at 1003 MHz.
CGD1044HI_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 21 September 2009
3 of 7
CGD1044HI
NXP Semiconductors
1 GHz, 25 dB gain GaAs high output power doubler
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
x
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
d
max.
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
y
2
UNIT
e
e
p
q
W
w
x
b
c
F
q
q
S
U
U
2
1
1
2
1
max.
max.
4.15
3.85
0.51
0.38
44.75 8.2 6-32
44.25 7.8 UNC
mm 20.8 9.1
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2
0.25 0.7 0.1 3.8
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-02-06
04-02-04
SOT115J
Fig 1. Package outline SOT115J
CGD1044HI_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 21 September 2009
4 of 7
CGD1044HI
NXP Semiconductors
1 GHz, 25 dB gain GaAs high output power doubler
7. Abbreviations
Table 6.
Abbreviations
Description
Acronym
CATV
ESD
Community Antenna TeleVision
ElectroStatic Discharge
Gallium-Arsenide
GaAs
NTSC
RF
National Television Standard Committee
Radio Frequency
UNC
UNified Coarse
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
CGD1044HI_1
20090921
Product data sheet
-
-
CGD1044HI_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 21 September 2009
5 of 7
CGD1044HI
NXP Semiconductors
1 GHz, 25 dB gain GaAs high output power doubler
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
CGD1044HI_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 21 September 2009
6 of 7
CGD1044HI
NXP Semiconductors
1 GHz, 25 dB gain GaAs high output power doubler
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 5
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 6
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 6
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
9.1
9.2
9.3
9.4
10
11
Contact information. . . . . . . . . . . . . . . . . . . . . . 6
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 September 2009
Document identifier: CGD1044HI_1
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