CGD1044HI [NXP]

1 GHz, 25 dB gain GaAs high output power doubler; 1 GHz的25 dB增益砷化镓高输出功率倍增
CGD1044HI
型号: CGD1044HI
厂家: NXP    NXP
描述:

1 GHz, 25 dB gain GaAs high output power doubler
1 GHz的25 dB增益砷化镓高输出功率倍增

射频和微波 射频倍频器 微波倍频器
文件: 总7页 (文件大小:52K)
中文:  中文翻译
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CGD1044HI  
1 GHz, 25 dB gain GaAs high output power doubler  
Rev. 01 — 21 September 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V  
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.  
1.2 Features  
I Excellent linearity  
I Superior levels of ESD protection  
I Extremely low noise  
I Excellent return loss properties  
I Gain compensation over temperature  
I Rugged construction  
I Unconditionally stable  
I Thermally optimized design  
I Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain  
Hazardous Substances (RoHS)  
I Integrated ring wave surge protection  
1.3 Applications  
I CATV systems operating in the 40 MHz to 1003 MHz frequency range  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb = 35 °C; unless otherwise  
specified.  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
23.2 - dB  
23.5 24.4 25.5 dB  
Gp  
power gain  
f = 50 MHz  
-
f = 1003 MHz  
[1]  
[1]  
[2]  
CTB  
CCN  
Itot  
composite triple beat  
Vo = 56.4 dBmV at 1003 MHz  
-
75 69 dBc  
63 dBc  
440 460 mA  
carrier-to-composite noise Vo = 56.4 dBmV at 1003 MHz  
total current  
57  
-
-
[1] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (6 dB offset);  
tilt extrapolated to 13.5 dB at 1003 MHz.  
[2] Direct Current (DC).  
CGD1044HI  
NXP Semiconductors  
1 GHz, 25 dB gain GaAs high output power doubler  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
input  
Simplified outline  
Graphic symbol  
5
2, 3  
5
common  
+VB  
1 3 5 7 9  
1
9
7, 8  
9
common  
output  
2
3
7
8
sym095  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
CGD1044HI  
-
rectangular single-ended package; aluminium flange;  
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra  
horizontal mounting holes; 7 gold-plated in-line leads  
SOT115J  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min Max Unit  
VB  
supply voltage  
-
-
-
30  
V
Vi(RF)  
VESD  
RF input voltage  
single tone  
75  
dBmV  
V
[1]  
electrostatic discharge voltage Human Body Model (HBM);  
According JEDEC standard  
2000  
22-A114E  
Biased; According  
IEC61000-4-2  
-
1500  
V
Tstg  
Tmb  
storage temperature  
40 +100 °C  
20 +100 °C  
mounting base temperature  
[1] The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.  
CGD1044HI_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 21 September 2009  
2 of 7  
CGD1044HI  
NXP Semiconductors  
1 GHz, 25 dB gain GaAs high output power doubler  
5. Characteristics  
Table 5.  
Characteristics  
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb = 35 °C; unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ  
23.2  
23.5 24.4  
Max Unit  
dB  
25.5 dB  
Gp  
power gain  
f = 50 MHz  
-
-
f = 1003 MHz  
[1]  
[2]  
SLsl  
FL  
slope straight line  
f = 40 MHz to 1003 MHz  
f = 40 MHz to 1003 MHz  
f = 40 MHz to 160 MHz  
f = 160 MHz to 320 MHz  
f = 320 MHz to 640 MHz  
f = 640 MHz to 870 MHz  
f = 870 MHz to 1003 MHz  
f = 40 MHz to 160 MHz  
f = 160 MHz to 320 MHz  
f = 320 MHz to 640 MHz  
f = 640 MHz to 870 MHz  
f = 870 MHz to 1003 MHz  
f = 50 MHz  
0.5  
-
-
2
1
-
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
flatness of frequency response  
input return loss  
-
RLin  
20  
20  
19  
17  
16  
20  
20  
19  
18  
17  
-
-
-
-
-
-
-
-
-
-
RLout  
output return loss  
-
-
-
-
-
-
-
-
-
-
NF  
Itot  
noise figure  
total current  
4.5  
5
5.5  
6
f = 1003 MHz  
-
[3]  
-
440  
460 mA  
79 NTSC channels + 75 digital channels  
[4]  
[4]  
[4]  
[4]  
CTB  
composite triple beat  
Vo = 56.4 dBmV at 1003 MHz  
-
75  
77  
68  
63  
69 dBc  
65 dBc  
CSO  
Xmod  
CCN  
composite second-order distortion Vo = 56.4 dBmV at 1003 MHz  
-
cross modulation  
Vo = 56.4 dBmV at 1003 MHz  
Vo = 56.4 dBmV at 1003 MHz  
-
-
-
dB  
carrier-to-composite noise  
57  
dBc  
79 NTSC channels  
[5]  
[5]  
[5]  
CTB  
composite triple beat  
Vo = 58.4 dBmV at 1003 MHz  
-
-
-
70  
75  
64  
-
-
-
dBc  
dBc  
dB  
CSO  
Xmod  
composite second-order distortion Vo = 58.4 dBmV at 1003 MHz  
cross modulation  
Vo = 58.4 dBmV at 1003 MHz  
[1] Gp at 1003 MHz minus Gp at 40 MHz.  
[2] Flatness is defined as peak deviation to straight line.  
[3] Direct Current (DC).  
[4] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (6 dB offset); tilt extrapolated to 13.5 dB  
at 1003 MHz.  
[5] 79 NTSC channels [f = 54 MHz to 550 MHz]; tilt extrapolated to 13.5 dB at 1003 MHz.  
CGD1044HI_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 21 September 2009  
3 of 7  
CGD1044HI  
NXP Semiconductors  
1 GHz, 25 dB gain GaAs high output power doubler  
6. Package outline  
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;  
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads  
SOT115J  
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
x
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
d
max.  
A
max.  
D
max.  
E
max.  
L
min.  
Q
max.  
Z
y
2
UNIT  
e
e
p
q
W
w
x
b
c
F
q
q
S
U
U
2
1
1
2
1
max.  
max.  
4.15  
3.85  
0.51  
0.38  
44.75 8.2 6-32  
44.25 7.8 UNC  
mm 20.8 9.1  
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8  
2.4 38.1 25.4 10.2 4.2  
0.25 0.7 0.1 3.8  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
99-02-06  
04-02-04  
SOT115J  
Fig 1. Package outline SOT115J  
CGD1044HI_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 21 September 2009  
4 of 7  
CGD1044HI  
NXP Semiconductors  
1 GHz, 25 dB gain GaAs high output power doubler  
7. Abbreviations  
Table 6.  
Abbreviations  
Description  
Acronym  
CATV  
ESD  
Community Antenna TeleVision  
ElectroStatic Discharge  
Gallium-Arsenide  
GaAs  
NTSC  
RF  
National Television Standard Committee  
Radio Frequency  
UNC  
UNified Coarse  
8. Revision history  
Table 7.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
CGD1044HI_1  
20090921  
Product data sheet  
-
-
CGD1044HI_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 21 September 2009  
5 of 7  
CGD1044HI  
NXP Semiconductors  
1 GHz, 25 dB gain GaAs high output power doubler  
9. Legal information  
9.1  
Data sheet status  
Document status[1][2]  
Product status[3]  
Definition  
Objective [short] data sheet  
Development  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
9.2  
Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
9.3  
Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
9.4  
Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
10. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
CGD1044HI_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 21 September 2009  
6 of 7  
CGD1044HI  
NXP Semiconductors  
1 GHz, 25 dB gain GaAs high output power doubler  
11. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 5  
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 6  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 6  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
9.1  
9.2  
9.3  
9.4  
10  
11  
Contact information. . . . . . . . . . . . . . . . . . . . . . 6  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 21 September 2009  
Document identifier: CGD1044HI_1  

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