CLF1G0035-50,112 [NXP]
CLF1G0035-50;
| 型号： | CLF1G0035-50,112 |
| 厂家： | 
NXP |
| 描述： | CLF1G0035-50 |
| 文件： | 总19页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CLF1G0035-50; CLF1G0035S-50
Broadband RF power GaN HEMT
Rev. 2 — 29 January 2013
Objective data sheet
1. Product profile
1.1 General description
CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers
with first generation GaN HEMT technology from NXP. Frequency of operation is from
DC to 3.5 GHz.
Table 1.
CW and pulsed RF application information
Typical RF performance at Tcase = 25 C; IDq = 150 mA; VDS = 50 V in a class-AB broadband demo
board.
Test signal
f
PL
(W)
50
50
50
50
50
50
50
50
50
50
Gp
(dB)
12
13
13
14
11
D
(%)
64
43
43
43
48
65
43
43
44
49
(MHz)
500
1-Tone CW
1000
1500
2000
2500
500
1-Tone pulsed [1]
12
15
15
15
13
1000
1500
2000
2500
[1] Pulsed RF; tp = 100 s; = 10 %.
Table 2.
2-Tone CW application information
Typical 2-Tone performance at Tcase = 25 C; IDq = 275 mA; VDS = 50 V in a class-AB broadband
demo board.
Test signal
f
PL(PEP)
(W)
10
IMD3
(dBc)
48
(MHz)
500
2-Tone CW [1]
1000
1500
2000
2500
10
40
10
43
10
38
10
38
[1] 2-Tone CW; f = 1 MHz.
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
1.2 Features and benefits
Frequency of operation is from DC to 3.5 GHz
50 W general purpose broadband RF Power GaN HEMT
Excellent ruggedness (VSWR 10 : 1)
High voltage operation (50 V)
Thermally enhanced package
1.3 Applications
Commercial wireless infrastructure
(cellular, WiMAX)
Industrial, scientific, medical
Radar
Jammers
Broadband general purpose amplifier
Public mobile radios
EMC testing
Defense application
2. Pinning information
Table 3.
Pin
CLF1G0035-50 (SOT467C)
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
drain
gate
ꢀ
1
ꢂ
[1]
source
3
ꢁ
2
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢃ
CLF1G0035S-50 (SOT467B)
1
2
3
drain
gate
ꢀ
1
ꢂ
[1]
source
3
ꢁ
2
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢃ
[1] Connected to flange.
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name Description
Version
CLF1G0035-50
CLF1G0035S-50
-
-
flanged ceramic package; 2 mounting holes; 2 leads SOT467C
earless ceramic package; 2 leads
SOT467B
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
2 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
4. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
IGF
Parameter
Conditions
Min
Max
150
+3
Unit
V
drain-source voltage
gate-source voltage
forward gate current
storage temperature
junction temperature
-
8
V
external RG = 5
-
18
mA
Tstg
65
+150 C
+250 C
Tj
measured via IR scan
-
5. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Rth(j-c)
Conditions
Typ Unit
[1]
thermal resistance from junction to case
Tj = 200 C
2.1
K/W
[1] Tj is measured via IR scan with case temperature of 85 C and power dissipation of 55 W.
6. Characteristics
Table 7.
DC Characteristics
Tcase = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
150
2.4 2
Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 7 V; IDS = 12 mA
-
-
V
VGS(th)
IDSX
gfs
gate-source threshold voltage
drain cut-off current
VDS = 0.1 V; IDS = 12 mA
VDS = 10 V; VGS = 3 V
VDS = 10 V; VGS = 0 V
1.3 V
-
-
8.8
1.8
-
-
A
S
forward transconductance
Table 8.
RF Characteristics
Test signal: 1-Tone CW; RF performance at VDS = 50 V; IDq = 150 mA; Tcase = 25 C; unless
otherwise specified in a class-AB production circuit.
Symbol
Parameter
Conditions
Min
Typ
-
Max
Unit
GHz
%
f
frequency
2.5
3
-
D
Gp
RLin
drain efficiency
power gain
PL = 50 W
PL = 50 W
PL = 50 W
-
-
-
48
11.5
5
-
dB
input return loss
-
dB
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
3 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
7. Application information
7.1 Demo circuit
ꢃꢄ
ꢃꢀ
ꢍꢀ
ꢇꢁ
ꢃꢉ
ꢅꢂ
ꢃꢁ
ꢃꢆ
ꢃꢊ
ꢃꢋ
ꢃꢌ
ꢇꢋ
ꢃꢂꢈ
ꢅꢀ
ꢇꢀ
ꢇꢂ
ꢃꢀꢁ
ꢃꢂꢀ
ꢃꢂꢁ
ꢃꢂꢂ
ꢃꢀꢂ ꢃꢀꢀ ꢃꢀꢈ
ꢍꢂ
ꢅꢁ
ꢃꢂꢉ
ꢃꢂꢄ
ꢍꢁ
ꢑꢂ
ꢃꢂꢆ
ꢎꢀ
ꢐꢀ
ꢏꢀ
ꢑꢀ
ꢀꢀꢀꢁꢂꢂꢃꢆꢂꢄ
Fig 1. The broadband amplifier (500 MHz to 2500 MHz) demo circuit outline
Table 9. List of components
See Figure 1 and Figure 2
Component Description
Value
-
Remarks
A1
GaN bias module v1
NXP
C1
multilayer ceramic chip capacitor 1.5 pF
multilayer ceramic chip capacitor 1.2 pF
multilayer ceramic chip capacitor 5.6 pF
multilayer ceramic chip capacitor 2.2 pF
multilayer ceramic chip capacitor 0.5 pF
multilayer ceramic chip capacitor 20 pF
ATC 600F1R5BT
ATC 600F1R2BT
ATC 600F5R6CT
ATC 600F2R2BT
ATC 600F0R5BT
ATC 600F200JT
C3, C6
C4
C5
C7
C8
C9
capacitor
1 pF to 4 pF
Tronser 66-0304-00004-000
C10
C11
C12
multilayer ceramic chip capacitor 10 nF
multilayer ceramic chip capacitor 22 pF
multilayer ceramic chip capacitor 1 nF
generic
generic
generic
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
4 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
Table 9.
List of components …continued
See Figure 1 and Figure 2
Component Description
Value
Remarks
C13
multilayer ceramic chip capacitor 100 nF
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 10 nF
multilayer ceramic chip capacitor 10 F
multilayer ceramic chip capacitor 1 F
generic
C20
ATC 100B102KW
ATC 100B101JW
generic
C21
C22, C26
C23
TDK C5750X7S2A106M
generic
C25
C27
electrolytic capacitor
drain voltage connection
RF in connector
470 F
Panasonic EEE-TK1J471AM
E1, E2
J1
-
-
-
-
J2
RF out connector
J3, P1
1 row, 3-way vertical DC connector
header
L1
inductor
12.5 nH
Coil craft A04T
L2
inductor
4 nH
L3
ferrite bead
transistor
transistor
transistor
resistor,
-
Fair-Rite 2743019447
NXP CLF1G0035-50
NXP BC857B
NXP PSMN8R2-80YS
generic
Q1
Q2
Q3
R1
-
-
-
10
10.0 k
100
-
R2
resistor
generic
R3, R4
resistor
generic
Z1, Z2, Z3,
Z4, Z5, Z6
microstrip lines
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
5 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
'ꢔꢙꢕꢓ
ꢑꢀ
ꢒꢓꢔ
ꢑꢂ
ꢐꢀ
ꢏꢀ
ꢀ
ꢎꢁ
ꢀ
ꢔ
ꢁ
ꢕꢓ
ꢒ
ꢂ
ꢃꢂꢆ
ꢋꢆꢈꢙ3ꢗꢙꢄꢁꢙ'
ꢉ
ꢍꢁ
ꢋ
ꢉ
ꢂ
ꢂ
ꢏ#$ꢓꢌꢇꢂꢘꢌꢈ,#
#
ꢋ
ꢁ
ꢁ
'ꢒ
ꢗꢖ
ꢃ
ꢁ
ꢂ
ꢀ
ꢆ
ꢒꢐꢓꢙꢖꢕꢐ#ꢙ
$%ꢔ&ꢅꢑ
ꢒꢓꢔ
ꢒꢓꢔ
ꢒꢓꢔ
ꢀ
ꢄ
ꢊ
ꢌ
ꢁ
ꢂ
ꢀꢈ
ꢀꢀ
ꢀꢂ
ꢃꢂꢄ
ꢀꢈꢙ(ꢗ
ꢃꢂꢉ
ꢀꢙ3ꢗ
ꢖ
ꢀ
ꢍꢂ
ꢖꢃꢌꢉꢆꢖ
ꢅꢁ
ꢂꢆꢋꢁꢈꢀꢊꢋꢋꢆ
ꢑ
ꢇꢂ
ꢀꢈꢙꢚꢛ
ꢇꢀ
ꢀꢈꢙꢛ
ꢃꢂꢀ
ꢀꢈꢈꢙ ꢗ
ꢃꢂꢈ
ꢀꢈꢙ(ꢗ
ꢃꢂꢂ
ꢀꢈꢈꢙ(ꢗ
ꢃꢂꢁ
ꢃꢊ
ꢇꢁꢙ)ꢙꢋ
ꢂꢈꢈꢙꢛ
ꢀꢈꢙ3ꢗ
ꢅꢂ
ꢋꢙ(+
ꢃꢀꢁ
ꢀꢈꢈꢙ(ꢗ
ꢃꢀꢈ
ꢀꢈꢙ(ꢗ
ꢃꢀꢂ
ꢀꢙ(ꢗ
ꢃꢀꢀ
ꢂꢂꢙ ꢗ
ꢀꢘꢋꢙ ꢗ
ꢅꢀ
ꢀꢂꢝꢉꢙ(+
ꢜꢋ
ꢜꢉ
ꢜꢄ
ꢃꢌ
ꢎꢂ
ꢌꢙ!ꢙꢌꢙ""
ꢀꢌꢙ!ꢙꢋꢙ""
ꢀꢁꢙ!ꢙꢀꢝꢆꢙ""
ꢂꢈꢙ ꢗ ꢓꢘꢗ
ꢎꢀ
ꢃꢋ
ꢜꢁ
ꢜꢂ
ꢜꢀ
ꢌꢙ!ꢙꢀꢈꢙ""
ꢍꢀ
ꢃꢅꢗꢀꢒꢈꢈꢁꢉꢘꢉꢈ
ꢓꢘꢗ ꢉꢝꢄꢙ ꢗ ꢀꢂꢙ!ꢙꢀꢝꢆꢙ""
ꢋꢙ!ꢙꢀꢝꢆꢙ""
ꢃꢁ
ꢀꢝꢂꢙ ꢗ
ꢃꢉ
ꢂꢝꢂꢙ ꢗ
ꢃꢄ
ꢀꢝꢂꢙ ꢗ
ꢃꢆ
ꢈꢝꢉꢙ ꢗ
ꢃꢀ
ꢀꢝꢉꢙ ꢗ
ꢀꢀꢀꢁꢂꢂꢃꢆꢂꢇ
See Table 9 for a list of components.
Fig 2. The broadband amplifier (500 MHz to 2500 MHz) demo circuit schematic
7.2 Application test results
Table 10. CW and pulsed RF application information
Typical RF performance at Tcase = 25 C; IDq = 150 mA; VDS = 50 V in a class-AB broadband demo
board.
Test signal
f
PL
(W)
50
50
50
50
50
50
50
50
50
50
Gp
(dB)
12
13
13
14
11
D
(%)
64
43
43
43
48
65
43
43
44
49
(MHz)
500
1-Tone CW
1000
1500
2000
2500
500
1-Tone pulsed [1]
12
15
15
15
13
1000
1500
2000
2500
[1] Pulsed RF; tp = 100 s; = 10 %.
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
6 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
Table 11. 2-Tone CW application information
Typical 2-Tone performance at Tcase = 25 C; IDq = 275 mA; VDS = 50 V in a class-AB broadband
demo board.
Test signal
f
PL(PEP)
(W)
10
IMD3
(dBc)
48
(MHz)
500
2-Tone CW [1]
1000
1500
2000
2500
10
40
10
43
10
38
10
38
[1] 2-Tone CW; f = 1 MHz.
7.3 Graphical data
The following figures are measured in a broadband amplifier demo board from 500 MHz
to 2500 MHz.
7.3.1 1-Tone CW RF performance
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢇ
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢄ
ꢀꢄ
ꢀꢂ
ꢌ
ꢆꢈ
ꢉꢉ
ꢋꢈ
ꢂꢉ
ꢀꢈ
ꢀꢌ
ꢀꢋ
ꢀꢈ
ꢄ
ꢆꢈ
ꢉꢉ
ꢋꢈ
ꢂꢉ
ꢀꢈ
ꢒ
ꢞ
ꢒ
ꢞ
ꢔ
.ꢟ0
ꢔ
ꢒ
.1ꢖ0
.ꢟ0
.1ꢖ0
.ꢂ0
.ꢀ0
.ꢁ0
ꢞ
ꢔ
.ꢋ0
ꢋ
.ꢄ0
.ꢉ0
ꢈ
ꢂ
ꢈ
ꢉꢈꢈ
ꢀꢈꢈꢈ
ꢀꢉꢈꢈ
ꢂꢈꢈꢈ
ꢂꢉꢈꢈ
ꢁꢈꢈꢈ
ꢁꢊ
ꢋꢀ
ꢋꢁ
ꢋꢉ
ꢋꢆ
ꢏ ꢙ.1ꢖ"0
ꢋꢊ
-ꢙ.$+/0
ꢅ
VDS = 50 V; IDq = 150 mA; PL = 50 W.
VDS = 50 V; IDq = 150 mA.
(1) Gp at f = 500 MHz
(2) Gp at f = 1500 MHz
(3) Gp at f = 2500 MHz
(4)
(5)
(6)
D at f = 500 MHz
D at f = 1500 MHz
D at f = 2500 MHz
Fig 3. Power gain and drain efficiency as function of
frequency; typical values
Fig 4. Power gain and drain efficiency as a function
of output power; typical values
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
7 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢆ
ꢀꢉ
ꢅ
ꢂꢈ
ꢀꢉ
ꢀꢈ
ꢉ
ꢒ 4ꢙꢒ
.1ꢖ0
ꢕ
ꢒ
."ꢐ0
ꢒ
ꢒ
ꢅ
ꢀꢋ
ꢀꢁ
ꢀꢂ
ꢀꢀ
ꢀꢈ
ꢕ
ꢒ
ꢈ
ꢘꢉ
ꢋꢄ
ꢋꢄꢝꢂ
ꢋꢄꢝꢋ
ꢋꢄꢝꢄ
ꢋꢄꢝꢌ
ꢋꢆ
ꢋꢆꢝꢂ
ꢏ ꢙ.1ꢖ"0
ꢅ
VDS = 50 V; IDq = 150 mA.
Fig 5. Power gain, linear gain and gate current as function of output power; typical
values
7.3.2 1-Tone pulsed RF performance
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢈ
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢅ
ꢀꢌ
ꢀꢉ
ꢀꢂ
ꢊ
ꢆꢈ
ꢄꢈ
ꢉꢈ
ꢋꢈ
ꢁꢈ
ꢂꢈ
ꢀꢈ
ꢀꢌ
ꢀꢋ
ꢀꢈ
ꢄ
ꢆꢈ
ꢉꢉ
ꢋꢈ
ꢂꢉ
ꢀꢈ
ꢒ
ꢞ
ꢒ
ꢞ
ꢔ
.ꢟ0
ꢔ
ꢒ
.1ꢖ0
.ꢟ0
.1ꢖ0
.ꢂ0
.ꢀ0
.ꢁ0
ꢞ
ꢔ
.ꢋ0
ꢄ
.ꢄ0
.ꢉ0
ꢁ
ꢈ
ꢂ
ꢈ
ꢉꢈꢈ
ꢀꢈꢈꢈ
ꢀꢉꢈꢈ
ꢂꢈꢈꢈ
ꢂꢉꢈꢈ
ꢁꢈꢈꢈ
ꢁꢊ
ꢋꢀ
ꢋꢁ
ꢋꢉ
ꢋꢆ
ꢏ ꢙ.1ꢖ"0
ꢋꢊ
-ꢙ.$+/0
ꢅ
VDS = 50 V; IDq = 150 mA; PL = 50 W.
f = 100 kHz, VDS = 50 V; IDq = 150 mA.
(1) Gp at f = 500 MHz
(2) Gp at f = 1500 MHz
(3) Gp at f = 2500 MHz
(4)
(5)
(6)
D at f = 500 MHz
D at f = 1500 MHz
D at f = 2500 MHz
Fig 6. Power gain and drain efficiency as function of
frequency; typical values
Fig 7. Power gain and drain efficiency as function of
output power; typical values
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
8 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
ꢀꢀꢀꢁꢂꢂꢃꢆꢂꢂ
ꢀꢀꢀꢁꢂꢂꢃꢆꢂꢉ
ꢂꢈ
ꢋ
ꢈ
ꢒ
ꢇꢅ
5(
.1ꢖ0
.1ꢖ0
ꢀꢄ
ꢀꢂ
ꢌ
ꢘꢋ
ꢘꢌ
ꢋ
ꢈ
ꢘꢀꢂ
ꢈ
ꢉꢈꢈ
ꢀꢈꢈꢈ
ꢀꢉꢈꢈ
ꢂꢈꢈꢈ
ꢂꢉꢈꢈ
ꢁꢈꢈꢈ
ꢈ
ꢉꢈꢈ
ꢀꢈꢈꢈ
ꢀꢉꢈꢈ
ꢂꢈꢈꢈ
ꢂꢉꢈꢈ
ꢁꢈꢈꢈ
-ꢙ.$+/0
-ꢙ.$+/0
Pi = 10 dBm, VDS = 50 V; IDq = 150 mA.
Pi = 10 dBm, VDS = 50 V; IDq = 150 mA.
Fig 8. Power gain as a function of frequency; typical
values
Fig 9. Input return loss as a function of frequency;
typical values
7.3.3 2-Tone CW performance
ꢀꢀꢀꢁꢂꢂꢃꢆꢂꢊ
ꢀꢀꢀꢁꢂꢂꢃꢆꢂꢃ
ꢈ
ꢈ
ꢕ$ꢔꢁ
.1ꢖ70
ꢕ$ꢔꢁ
.1ꢖ70
ꢘꢀꢈ
ꢘꢀꢈ
ꢘꢂꢈ
ꢘꢂꢈ
.ꢀ0
.ꢀ0
.ꢁ0
.ꢂ0
.ꢁ0
ꢘꢁꢈ
ꢘꢁꢈ
.ꢂ0
ꢘꢋꢈ
ꢘꢋꢈ
ꢘꢉꢈ
ꢘꢉꢈ
ꢘꢄꢈ
ꢘꢄꢈ
ꢂ
ꢂ
ꢀ
ꢀꢈ
ꢀꢈ
ꢀ
ꢀꢈ
ꢀꢈ
ꢏ
ꢙ.60
ꢏ
ꢙ.60
ꢅ.ꢏꢑꢏ0
ꢅ.ꢏꢑꢏ0
f = 1 MHz; VDS = 50 V; IDq = 150 mA.
(1) f = 500 MHz
f = 1 MHz; VDS = 50 V; IDq = 275 mA.
(1) f = 500 MHz
(2) f = 1500 MHz
(3) f = 2500 MHz
(2) f = 1500 MHz
(3) f = 2500 MHz
Fig 10. Third-order intermodulation distortion as a
function of peak envelope power load power;
typical values
Fig 11. Third-order intermodulation distortion as a
function of peak envelope power load power;
typical values
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
9 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
ꢀꢀꢀꢁꢂꢂꢃꢆꢂꢋ
ꢘꢂꢈ
ꢕ$ꢔꢁ
.1ꢖ70
ꢘꢁꢈ
ꢘꢋꢈ
.ꢄ0
.ꢉ0
.ꢋ0
.ꢁ0
.ꢂ0
.ꢀ0
ꢘꢉꢈ
ꢘꢄꢈ
ꢉꢈꢈ
ꢊꢈꢈ
ꢀꢁꢈꢈ
ꢀꢆꢈꢈ
ꢂꢀꢈꢈ
ꢂꢉꢈꢈ
-ꢙ.$+/0
VDS = 50 V; IDq = 275 mA; PL(PEP) = 10 W.
(1) f = 10 kHz
(2) f = 30 kHz
(3) f = 100 kHz
(4) f = 300 kHz
(5) f = 1 MHz
(6) f = 3 MHz
Fig 12. Third-order intermodulation distortion as a function of frequency; typical values
7.4 Bias module
The bias module information for the GaN HEMT amplifier is described in application note
“AN11130”
8. Test information
8.1 Ruggedness in class-AB operation
The CLF1G0035-50 and CLF1G0035S-50 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS = 50 V; PL = 50 W (CW), f = 2500 MHz.
8.2 Load pull impedance information
The measured load pull impedances are shown below. Impedance reference plane
defined at device leads. Measurements performed with NXP test fixtures. Test
temperature set at 25 C with a CW signal.
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
10 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
Table 12. Typical impedance
Typical values unless otherwise specified.
f
ZS
ZL (maximum PL(M)
)
ZL (maximum D)
MHz
500
6.4 + 4j
1.9 + 2.2j
1.9 2.9j
2.1 6.3j
2.5 9j
2.9 14j
9.7 + 7j
10 + 5.0j
10 + 6.0j
6.6 + 1.4j
4.5 0.4 j
5.8 1.8j
5.8 3j
1000
2000
2500
3000
3500
9.1 + 12.4j
5 + 4.1j
3.6 + 0.75j
3.9 1.2j
6.6 2j
1895(
>9?=
:;<87=
ꢜ
ꢜ
ꢅ
#
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢋ
Fig 13. Definition of transistor impedance
ZS is the measured source pull impedance presented to the device. ZL is the measured
load pull impedance presented to the device.
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
11 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
8.3 Packaged S-parameter data
Table 13. S-parameter
Small signal; VDS = 50 V; IDq = 150 mA; ZS = ZL = 50
f
S11
S21
S12
S22
(MHz)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
500
0.82686
0.82717
0.82892
0.83183
0.83572
0.84047
0.84604
0.85244
0.8597
168.9
171.62
173.81
175.69
177.39
178.98
179.5
9.6028
7.7589
6.4386
5.4524
4.6934
4.096
67.238
61.123
55.547
50.412
45.655
41.233
37.11
0.01482
9.5809
12.463
14.415
15.413
15.358
14.091
11.409
7.0907
0.99281
6.7932
15.766
25.034
33.645
40.908
46.58
0.48482
0.52053
0.55589
0.58964
0.62126
0.65063
0.67787
0.70319
0.72687
0.74919
0.77044
0.79086
0.81069
0.8252
133.17
136.01
138.65
141.17
143.61
145.96
148.22
150.39
152.47
154.47
156.39
158.24
160.04
161.7
600
0.013844
0.01282
700
800
0.011783
0.010764
0.0097946
0.008907
0.0081421
0.0075495
0.0071873
0.0071125
0.0073641
0.007952
0.0088014
0.0098257
0.011062
0.012486
0.014088
0.015869
0.01784
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
3600
3700
3800
3900
4000
4100
3.618
178
3.2306
2.9136
2.6525
2.4362
2.2569
2.1083
1.972
33.257
29.648
26.259
23.07
176.51
175.01
173.47
171.88
170.23
168.57
166.97
165.33
163.64
161.88
160.04
158.1
0.86785
0.87697
0.88715
0.89848
0.90446
0.90172
0.89927
0.89713
0.89532
0.89386
0.89277
0.89205
0.89096
0.88445
0.87762
0.87039
0.86268
0.85434
0.84525
0.83522
0.82403
0.80856
0.79077
0.77106
0.74926
0.72527
0.69912
0.67108
20.062
17.22
14.461
11.713
9.0465
6.4503
3.9129
1.4231
1.0309
3.4611
5.8933
8.4222
10.982
13.588
16.259
19.013
21.877
24.877
28.05
31.326
34.765
38.412
42.297
46.449
50.902
55.686
1.839
0.83233
0.83898
0.84528
0.85135
0.85727
0.86313
0.86899
0.87436
0.87579
0.87715
0.87847
0.8798
163.2
1.7253
1.6281
1.5454
1.4755
1.4171
1.3692
1.3297
1.2888
1.2551
1.2281
1.2076
1.1934
1.1855
1.1839
1.1889
1.1872
1.1867
1.1896
1.1956
1.2044
1.2152
1.2274
50.849
53.942
56.092
57.498
58.314
58.659
58.605
58.132
57.364
56.329
55.045
53.519
51.748
49.721
47.418
44.92
164.63
166
167.32
168.6
169.84
171.05
172.23
173.35
174.44
175.5
156.03
153.83
151.58
149.17
146.59
143.8
0.020023
0.022423
0.024891
0.027588
0.030547
0.033808
0.037423
0.041451
0.045967
0.051058
0.056194
0.061705
0.067742
0.074348
0.081559
0.089394
0.097849
176.54
177.56
178.56
179.53
179.52
178.56
177.6
140.75
137.4
0.88118
0.88265
0.88425
0.88607
0.88556
0.88468
0.88406
0.88382
0.88412
0.88516
0.88717
133.68
129.52
125.24
120.6
42.174
39.146
35.812
32.146
28.121
23.71
115.45
109.7
176.66
175.74
103.23
95.917
87.595
174.82
173.9
172.98
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
12 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
Table 13. S-parameter …continued
Small signal; VDS = 50 V; IDq = 150 mA; ZS = ZL = 50
f
S11
S21
S12
S22
(MHz)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
4200
4300
4400
4500
4600
4700
4800
4900
5000
5100
5200
5300
5400
5500
5600
5700
5800
5900
6000
0.64183
0.6126
78.092
67.228
54.856
40.93
1.24
60.826
66.34
0.10688
0.11639
0.12622
0.13615
0.14588
0.15511
0.16356
0.17103
0.17745
0.18272
0.18683
0.1906
18.891
0.89042
0.89516
0.90159
0.90984
0.91983
0.9313
172.03
171.03
169.95
168.75
167.38
165.79
163.95
161.82
159.39
156.67
153.74
150.52
147.04
143.28
139.15
134.58
129.47
123.72
117.18
1.2515
1.2604
1.2649
1.2633
1.2542
1.2369
1.2115
1.1791
1.1406
1.0972
1.0544
1.0134
0.97537
0.94075
0.90986
0.88283
0.85961
0.84
13.65
0.58534
0.5628
72.231
78.48
7.9864
1.9193
0.54816
0.54433
0.55279
0.57293
0.60219
0.63534
0.66527
0.69493
0.72195
0.74577
0.76759
0.78744
0.80548
0.82197
0.83722
25.608
9.3292
7.214
23.266
38.234
51.341
61.779
71.079
78.947
85.567
91.49
96.798
101.57
105.86
109.72
85.047
91.862
98.835
105.86
112.84
119.47
125.31
130.96
136.23
141.15
146
4.5074
11.224
18.138
25.144
32.138
38.825
44.756
50.53
0.94381
0.95677
0.96962
0.9807
0.98704
0.99214
0.99508
0.99579
0.99532
0.99371
0.99093
0.98694
0.98164
0.19423
0.19795
0.20193
0.20632
0.21125
0.21682
0.22309
55.963
61.088
66.161
71.236
76.374
81.647
87.14
150.8
155.64
160.58
165.71
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
13 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
B
3
D
1
U
1
q
C
c
1
E
1
H
U
E
2
A
w
p
M
M
M
B
A
1
2
Q
w
M
M
C
b
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
p
Q
q
U
U
w
w
2
1
1
1
2
1
4.67
3.94
3.43 2.21
3.18 1.96
20.45 5.97
20.19 5.72
5.59 0.15
5.33 0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97 1.65 18.54
5.72 1.40 17.02
14.27
0.562
0.25
0.51
0.135 0.087
0.125 0.077
0.805 0.235
0.795 0.225
0.184 0.220 0.006 0.364 0.365 0.233 0.235 0.065 0.73
0.155 0.210 0.004 0.356 0.355 0.227 0.225 0.055 0.67
inch
0.010 0.020
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-12-28
12-05-02
SOT467C
Fig 14. Package outline SOT467C
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
14 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
Earless ceramic package; 2 leads
SOT467B
D
A
F
3
D
1
D
U
c
1
1
E
1
U
2
H
E
2
w
2
b
A
Q
0
5 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
E
E
1
F
H
Q
U
U
2
w
2
1
1
max 4.67 5.59 0.15 9.25 9.27 5.92 5.97 1.65 18.29 2.21 9.78 5.97
mm nom
0.25
0.01
min 3.94 5.33 0.10 9.04 9.02 5.77 5.72 1.40 17.27 1.96 9.53 5.72
max 0.184 0.22 0.006 0.364 0.365 0.233 0.235 0.065 0.72 0.087 0.385 0.235
inches nom
min 0.155 0.21 0.004 0.356 0.355 0.227 0.225 0.055 0.68 0.077 0.375 0.225
Note
1. millimeter dimensions are derived from the original inch dimensions.
sot467b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
11-08-18
12-05-01
SOT467B
Fig 15. Package outline SOT467B
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
15 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
10. Handling information
10.1 ESD Sensitivity
Table 14. ESD sensitivity
ESD model
Class
Human Body Model (HBM); According JEDEC standard JESD22-A114F
1B [1]
[1] Classification 1B is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after
exposure to an ESD pulse of 1000 V.
11. Abbreviations
Table 15. Abbreviations
Acronym
CW
Description
Continuous Wave
EMC
ElectroMagnetic Compatibility
ElectroStatic Discharge
ESD
GaN
Gallium Nitride
HEMT
VSWR
WiMAX
High Electron Mobility Transistor
Voltage Standing-Wave Ratio
Worldwide Interoperability for Microwave Access
12. Revision history
Table 16. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
CLF1G0035-50_1G0035S-50 v.2 20130129
Objective data sheet - CLF1G0035-50_1G0035S-50 v.1
Modifications:
• Table 7 on page 3: table has been updated.
• Section 7 on page 4: layout has been changed.
• Section 8 on page 10: layout has been changed.
CLF1G0035-50_1G0035S-50 v.1 20120615
Objective data sheet -
-
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
16 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
13.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
17 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
CLF1G0035-50_1G0035S-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
18 of 19
CLF1G0035-50; CLF1G0035S-50
NXP Semiconductors
Broadband RF power GaN HEMT
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 2
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
7.3
7.3.1
7.3.2
7.3.3
7.4
Application information. . . . . . . . . . . . . . . . . . . 4
Demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application test results . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
1-Tone CW RF performance. . . . . . . . . . . . . . . 7
1-Tone pulsed RF performance . . . . . . . . . . . . 8
2-Tone CW performance . . . . . . . . . . . . . . . . . 9
Bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 10
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
Ruggedness in class-AB operation . . . . . . . . 10
Load pull impedance information . . . . . . . . . . 10
Packaged S-parameter data. . . . . . . . . . . . . . 12
8.1
8.2
8.3
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
Handling information. . . . . . . . . . . . . . . . . . . . 16
ESD Sensitivity. . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
10
10.1
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 January 2013
Document identifier: CLF1G0035-50_1G0035S-50
相关型号：
©2020 ICPDF网 联系我们和版权申明