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CLF1G0060-30U [NXP]

CLF1G0060-30;
CLF1G0060-30U
型号： CLF1G0060-30U
厂家： NXP    NXP
描述：

CLF1G0060-30

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CLF1G0060-30; CLF1G0060S-30  
Broadband RF power GaN HEMT  
Rev. 4 — 20 June 2013  
Objective data sheet  
1. Product profile  
1.1 General description  
The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN  
HEMTs usable from DC to 6.0 GHz.  
Table 1.  
CW and pulsed RF application information  
Typical RF performance at Tcase = 25 C; IDq = 70 mA; VDS = 50 V in a class-AB broadband demo  
board.  
Test signal  
f
PL  
(W)  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
Gp  
D  
(MHz)  
500  
(dB)  
15.6  
13.9  
13.7  
12.6  
14.2  
16.6  
15.8  
15.5  
14.5  
15.9  
(%)  
60.7  
50.3  
50.8  
49  
1-Tone CW  
1000  
1500  
2000  
2500  
500  
55.6  
61  
1-Tone pulsed [1]  
1000  
1500  
2000  
2500  
50  
52.5  
50  
59  
[1] Pulsed RF; tp = 100 s; = 10 %.  
Table 2.  
2-Tone CW application information  
Typical 2-Tone performance at Tcase = 25 C; IDq = 150 mA; VDS = 50 V in a class-AB broadband  
demo board.  
Test signal  
f
PL(PEP)  
(W)  
10  
IMD3  
(dBc)  
38  
(MHz)  
500  
2-Tone CW [1]  
1000  
1500  
2000  
2500  
10  
50  
10  
45  
10  
50  
10  
43  
[1] 2-Tone CW; f = 1 MHz.  
 
 
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
1.2 Features and benefits  
Frequency of operation is from DC to 6.0 GHz  
30 W general purpose broadband RF Power GaN HEMT  
Excellent ruggedness (VSWR = 10 : 1)  
High voltage operation (50 V)  
Thermally enhanced package  
1.3 Applications  
Commercial wireless infrastructure  
(cellular, WiMAX)  
Industrial, scientific, medical  
Radar  
Jammers  
Broadband general purpose amplifier  
Public mobile radios  
EMC testing  
Defense application  
2. Pinning information  
Table 3.  
Pin  
CLF1G0060-30 (SOT1227A)  
Pinning  
Description  
Simplified outline  
Graphic symbol  
1
2
3
drain  
gate  
ꢀ
ꢀ
ꢂ
[1]  
source  
ꢂ
ꢁ
ꢁ
DDDꢀꢁꢁꢂꢃꢄꢂ  
CLF1G0060S-30 (SOT1227B)  
1
2
3
drain  
gate  
ꢀ
ꢀ
ꢂ
ꢂ
[1]  
source  
ꢁ
DDDꢀꢁꢁꢂꢃꢄꢂ  
[1] Connected to flange.  
3. Ordering information  
Table 4.  
Ordering information  
Type number  
Package  
Name Description  
Version  
CLF1G0060-30  
CLF1G0060S-30  
-
-
flanged ceramic package; 2 mounting holes; 2 leads SOT1227A  
earless flanged ceramic package; 2 leads  
SOT1227B  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
2 of 19  
 
 
 
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
4. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
VGS  
IGF  
Parameter  
Conditions  
Min  
Max  
150  
+3  
Unit  
V
drain-source voltage  
gate-source voltage  
forward gate current  
storage temperature  
junction temperature  
-
8  
V
external RG = 5   
-
11  
mA  
Tstg  
65  
+150 C  
Tj  
measured via IR scan  
-
250  
C  
5. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol Parameter  
Rth(j-c)  
Conditions  
Typ  
Unit  
[1]  
thermal resistance from junction to case  
Tj = 200 C  
3.1  
K/W  
[1] Tj is measured via IR scan with case temperature of 85 C and power dissipation of 34 W.  
6. Characteristics  
Table 7.  
DC Characteristics  
Tcase = 25 C; unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 7 V;  
150  
-
-
V
IDS = 7.2 mA  
VGS(th)  
gate-source threshold voltage  
VDS = 0.1 V;  
IDS = 7.2 mA  
2.4 2  
1.6  
V
IDSX  
gfs  
drain cut-off current  
VDS = 10 V; VGS = 3 V  
VDS = 10 V; VGS = 0 V  
-
-
5.1  
1.1  
-
-
A
S
forward transconductance  
Table 8.  
RF Characteristics  
Test signal: pulsed RF; tp = 100 s; = 10 %; RF performance at VDS = 50 V; IDq = 70 mA;  
case = 25 C; unless otherwise specified in a class-AB production circuit.  
T
Symbol  
Parameter  
Conditions  
Min  
Typ  
-
Max Unit  
f
frequency  
3
-
-
-
-
-
-
3.5  
GHz  
%
D  
Gp  
RLin  
drain efficiency  
power gain  
PL = 30 W  
PL = 30 W  
PL = 30 W  
PL = 30 W  
PL = 30 W  
PL = 30 W  
50  
13  
7  
0.04  
5
-
-
-
-
-
-
dB  
dB  
dB  
ns  
input return loss  
Pdroop(pulse) pulse droop power  
tr  
tf  
rise time  
fall time  
5
ns  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
3 of 19  
 
 
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
7. Application information  
7.1 Demo circuit  
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Printed-Circuit Board (PCB) material: Taconic RF35, r = 3.5, thickness 30 mils, 1 oz copper on  
each side.  
See Table 9 for list of components.  
Fig 1. The broadband amplifier (500 MHz to 2500 MHz) demo circuit outline  
Table 9.  
List of components  
See Figure 1.  
Component Description  
Value  
-
Remarks  
NXP  
A1  
GaN bias module v2  
C1, C10  
C2, C7  
C3  
multilayer ceramic chip capacitor 8.2 pF  
multilayer ceramic chip capacitor 0.8 pF  
ATC 600F  
ATC 600F  
SMD 0805  
SMD 0805  
SMD 0805  
SMD 1206  
ATC 600F  
ATC 600F  
electrolytic capacitor  
electrolytic capacitor  
electrolytic capacitor  
electrolytic capacitor  
100 nF, 50 V  
C4  
10 nF, 50 V  
22 pF, 100 V  
1 nF, 100 V  
C5  
C6  
C8  
multilayer ceramic chip capacitor 1.2 pF  
multilayer ceramic chip capacitor 0.5 pF  
C9  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
4 of 19  
 
 
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
Table 9.  
List of components …continued  
See Figure 1.  
Component Description  
Value  
Remarks  
C11  
C12  
C14  
C15  
C16  
C17  
E1, E2  
J1  
multilayer ceramic chip capacitor 100 pF  
multilayer ceramic chip capacitor 1 nF  
ATC 100B  
ATC 700B  
SMD 1206  
SMD 2220  
SMD 1210  
PCE3667CT-ND  
electrolytic capacitor  
electrolytic capacitor  
electrolytic capacitor  
electrolytic capacitor  
drain voltage connection  
RF in connector  
RF out connector  
inductor  
1 F, 100V  
10 F, 100 V  
10 nF, 200 V  
470 F, 63 V  
-
-
J2  
-
L1  
330 nH  
1008CS-100XJB  
2743019447  
L2  
ferrite bead  
-
-
L3  
inductor  
1 turn, 18 AWG,  
inner diameter = 4.06 mm  
Q1  
Q2  
Q3  
R1  
R2  
R3  
transistor  
transistor  
transistor  
resistor  
-
NXP CLF1G0060-30  
NXP BC857B  
-
-
NXP PSMN8R2-80YS  
Vishay Dale  
10 k  
10   
0.005   
-
resistor  
Vishay Dale  
resistor  
RL7520WT-R005-F  
Z1, Z2, Z3,  
Z4, Z5, Z6,  
Z7, Z8, Z9,  
Z10, Z11,  
Z12, Z13  
microstrip lines  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
5 of 19  
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See Table 9 for a list of components.  
Fig 2. The broadband amplifier (500 MHz to 2500 MHz) demo circuit schematic  
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
7.2 Application test results  
Table 10. CW and pulsed RF application information  
Typical RF performance at Tcase = 25 C; IDq = 70 mA; VDS = 50 V in a class-AB broadband demo  
board.  
Test signal  
f
PL  
(W)  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
Gp  
D  
(MHz)  
500  
(dB)  
15.6  
13.9  
13.7  
12.6  
14.2  
16.6  
15.8  
15.5  
14.5  
15.9  
(%)  
60.7  
50.3  
50.8  
49  
1-Tone CW  
1000  
1500  
2000  
2500  
500  
55.6  
61  
1-Tone pulsed [1]  
1000  
1500  
2000  
2500  
50  
52.5  
50  
59  
[1] Pulsed RF; tp = 100 s; = 10 %.  
Table 11. 2-Tone CW application information  
Typical 2-Tone performance at Tcase = 25 C; IDq = 150 mA; VDS = 50 V in a class-AB broadband  
demo board.  
Test signal  
f
PL(PEP)  
(W)  
10  
IMD3  
(dBc)  
38  
(MHz)  
500  
2-Tone CW [1]  
1000  
1500  
2000  
2500  
10  
50  
10  
45  
10  
50  
10  
43  
[1] 2-Tone CW; f = 1 MHz.  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
7 of 19  
 
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
7.3 Graphical data  
The following figures are measured in a broadband amplifier demo board from 500 MHz  
to 2500 MHz.  
7.3.1 1-Tone CW RF performance  
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VDS = 50 V; IDq = 70 mA; PL = 30 W.  
VDS = 50 V; IDq = 70 mA.  
(1) Gp at f = 500 MHz  
(2) Gp at f = 1500 MHz  
(3) Gp at f = 2500 MHz  
(4)  
(5)  
(6)  
D at f = 500 MHz  
D at f = 1500 MHz  
D at f = 2500 MHz  
Fig 3. Power gain and drain efficiency as function of  
frequency; typical values  
Fig 4. Power gain and drain efficiency as function of  
output power; typical values  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
8 of 19  
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
7.3.2 1-Tone pulsed RF performance  
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VDS = 50 V; IDq = 70 mA; PL = 30 W; tp = 100 s;  
= 10 %.  
VDS = 50 V; IDq = 70 mA; tp = 100 s; = 10 %.  
(1) Gp at f = 500 MHz  
(2) Gp at f = 1500 MHz  
(3) Gp at f = 2500 MHz  
(4)  
(5)  
(6)  
D at f = 500 MHz  
D at f = 1500 MHz  
D at f = 2500 MHz  
Fig 5. Power gain and drain efficiency as function of  
frequency; typical values  
Fig 6. Power gain and drain efficiency gain as  
function of output power; typical values  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
9 of 19  
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
7.3.3 2-Tone CW performance  
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ꢎꢂꢏ  
ꢅꢋꢃ  
ꢅꢇꢃ  
ꢅꢄꢃ  
ꢂ
ꢀ
ꢀꢃ  
ꢀꢃ  
ꢇꢃꢃ  
ꢊꢃꢃ  
ꢀꢁꢃꢃ  
ꢀꢈꢃꢃ  
ꢂꢀꢃꢃ  
Iꢆꢎ0+]ꢏ  
ꢂꢇꢃꢃ  
3
ꢆꢎ:ꢏ  
/ꢎ3(3ꢏ  
VDS = 50 V; IDq = 150 mA; f = 1 MHz.  
(1) f = 500 MHz  
VDS = 50 V; IDq = 150 mA; PL(PEP) =10 W.  
(1) f = 10 kHz  
(2) f = 30 kHz  
(3) f = 100 kHz  
(4) f = 300 kHz  
(5) f = 1 MHz  
(6) f = 3 MHz  
(2) f = 1500 MHz  
(3) f = 2500 MHz  
Fig 7. Third order intermodulation distortion as a  
function of peak envelope power; typical  
values  
Fig 8. Third-order intermodulation distortion as  
function of frequency and tone spacing;  
typical values  
7.4 Bias module  
The bias module information for the GaN HEMT amplifier is described in application note  
“AN11130”.  
8. Test information  
8.1 Ruggedness in class-AB operation  
The CLF1G0060-30 and CLF1G0060S-30 are capable of withstanding a load mismatch  
corresponding to VSWR = 10 : 1 through all phases under the following conditions:  
V
DS = 50 V; PL = 30 W (pulsed RF), f = <tbd> MHz.  
8.2 Load pull impedance information  
The measured load pull impedances are shown below. Impedance reference plane  
defined at device leads. Measurements performed with NXP test fixtures. Test  
temperature set at 25 C with a pulsed CW signal; tp = 100 s; = 10 %; RF performance  
at VDS = 50 V; IDq = 50 mA.  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
10 of 19  
 
 
 
 
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
Table 12. Typical impedance  
Typical values unless otherwise specified.  
f
ZS  
ZL (maximum PL(M)  
)
ZL (maximum D)  
MHz  
2140  
2500  
2700  
3000  
3300  
3500  
3700  
4000  
1.4 4j  
2.8 6j  
2.8 7.5j  
3.0 10j  
3.0 11.5j  
3.0 13j  
3.5 14.4j  
3.7 20.3j  
14 + 5.4j  
10.5 + 2.5j  
10.7 + 1.3j  
9.1 + 3.5j  
9.4 + 1.2j  
9.5  
12.5 + 9.7j  
7.6 + 5.6j  
7.6 + 4.3j  
7.7 + 4.2j  
7.6 + 2.5j  
7.2 + 1.35j  
7.3 0.05j  
7.7 1.2j  
9.4 1.1j  
9.3 2.4j  
GUDLQ  
JDWH  
VRXUFH  
=
=
/
6
DDDꢀꢁꢁꢂꢃꢄꢈ  
Fig 9. Definition of transistor impedance  
ZS is the measured source pull impedance presented to the device. ZL is the measured  
load pull impedance presented to the device.  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
11 of 19  
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
8.3 Packaged S-parameter data  
Table 13. S-parameter  
Small signal; VDS = 50 V; IDq = 50 mA; ZS = ZL = 50   
f
S11  
S21  
S12  
S22  
(MHz)  
Magnitude  
(ratio)  
Angle  
(degree)  
Magnitude  
(ratio)  
Angle  
(degree)  
Magnitude  
(ratio)  
Angle  
(degree)  
Magnitude  
(ratio)  
Angle  
(degree)  
100  
0.9302  
76.396  
115.47  
134.97  
146.22  
153.57  
158.81  
162.82  
166.05  
168.77  
171.15  
173.27  
175.22  
177.04  
178.75  
179.61  
178.03  
176.49  
175  
44.515  
29.415  
21.02  
135.22  
111.96  
98.876  
89.855  
82.761  
76.739  
71.392  
66.516  
61.995  
57.758  
53.759  
49.966  
46.356  
42.911  
39.616  
36.459  
33.428  
30.514  
27.709  
25.005  
22.395  
19.872  
17.429  
15.062  
12.766  
10.534  
8.3639  
6.2502  
4.1894  
2.1779  
0.21252  
1.71  
0.016195  
0.021253  
0.022516  
0.02261  
46.871  
25.279  
13.903  
6.6529  
1.4192  
2.6237  
5.8352  
8.375  
10.302  
11.612  
12.256  
12.138  
11.113  
8.9845  
5.505  
0.40868  
6.4893  
15.099  
24.853  
34.74  
0.7376  
43.407  
65.523  
77.762  
86.181  
92.826  
98.482  
103.5  
200  
0.87436  
0.8537  
0.55438  
0.47582  
0.44954  
0.44849  
0.46041  
0.47921  
0.50159  
0.5256  
300  
400  
0.8464  
16.096  
12.919  
10.71  
500  
0.8446  
0.022198  
0.021498  
0.020604  
0.019567  
0.018424  
0.017205  
0.015936  
0.014644  
0.01336  
600  
0.84548  
0.84785  
0.85112  
0.85494  
0.85908  
0.86338  
0.86774  
0.87206  
0.8763  
700  
9.0883  
7.8465  
6.8655  
6.0713  
5.4157  
4.866  
800  
108.06  
112.27  
116.19  
119.86  
123.33  
126.6  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
2100  
2200  
2300  
2400  
2500  
2600  
2700  
2800  
2900  
3000  
3100  
3200  
3300  
3400  
3500  
3600  
3700  
0.5501  
0.57433  
0.59785  
0.62038  
0.64176  
0.66191  
0.68081  
0.69846  
0.7149  
4.3993  
3.9988  
3.6521  
3.3496  
3.0841  
2.8497  
2.6416  
2.4562  
2.2902  
2.1411  
2.0067  
1.8852  
1.775  
0.012117  
0.010958  
0.0099386  
0.0091267  
0.0085991  
0.008424  
0.0086339  
0.0092114  
0.0101  
129.7  
0.88039  
0.88432  
0.88806  
0.8916  
132.65  
135.46  
138.14  
140.7  
0.89493  
0.89806  
0.90098  
0.9037  
173.53  
172.09  
170.67  
169.26  
167.87  
166.48  
165.11  
163.74  
162.37  
161  
0.73019  
0.74438  
0.75755  
0.76975  
0.78106  
0.79154  
0.80125  
0.81025  
0.8186  
143.15  
145.5  
43.73  
147.76  
149.93  
152.02  
154.04  
155.99  
157.88  
159.71  
161.49  
163.22  
164.91  
166.55  
168.16  
169.73  
171.27  
172.78  
174.26  
175.72  
51.208  
57.053  
61.439  
64.635  
66.902  
68.455  
69.459  
70.039  
70.288  
70.278  
70.06  
0.90622  
0.90856  
0.91072  
0.91272  
0.91455  
0.91623  
0.91777  
0.91917  
0.92044  
0.9216  
0.011233  
0.012549  
0.014001  
0.015556  
0.017191  
0.01889  
1.6748  
1.5835  
1.5001  
1.4237  
1.3535  
1.289  
0.82634  
0.83353  
0.8402  
159.63  
158.27  
156.89  
155.52  
154.14  
152.75  
151.35  
149.94  
148.53  
0.020642  
0.022441  
0.024281  
0.02616  
0.84641  
0.85218  
0.85755  
0.86255  
0.8672  
1.2296  
1.1748  
1.1241  
1.0771  
1.0336  
0.99314  
0.92264  
0.92357  
0.92441  
0.92515  
0.92579  
3.5925  
5.4376  
7.2479  
9.0257  
10.773  
0.028076  
0.030027  
0.032015  
0.034039  
0.036099  
69.675  
69.154  
68.521  
67.795  
66.989  
0.87155  
0.87559  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
12 of 19  
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
Table 13. S-parameter …continued  
Small signal; VDS = 50 V; IDq = 50 mA; ZS = ZL = 50   
f
S11  
S21  
S12  
S22  
(MHz)  
Magnitude  
(ratio)  
Angle  
(degree)  
Magnitude  
(ratio)  
Angle  
(degree)  
Magnitude  
(ratio)  
Angle  
(degree)  
Magnitude  
(ratio)  
Angle  
(degree)  
3800  
3900  
4000  
4100  
4200  
4300  
4400  
4500  
4600  
4700  
4800  
4900  
5000  
5100  
5200  
5300  
5400  
5500  
5600  
5700  
5800  
5900  
6000  
0.92635  
0.92683  
0.92723  
0.92756  
0.92781  
0.928  
147.1  
0.95551  
0.92046  
0.88777  
0.85724  
0.82871  
0.802  
12.493  
14.186  
15.855  
17.501  
19.126  
20.732  
22.32  
0.038198  
0.040336  
0.042516  
0.044737  
0.047003  
0.049315  
0.051676  
0.054087  
0.05655  
66.115  
65.183  
64.2  
0.87937  
0.8829  
177.15  
178.57  
179.97  
178.65  
177.28  
175.93  
174.58  
173.25  
171.92  
170.6  
145.65  
144.2  
0.88619  
0.88927  
0.89215  
0.89484  
0.89735  
0.8997  
142.73  
141.24  
139.73  
138.2  
63.171  
62.101  
60.994  
59.853  
58.68  
0.92812  
0.92818  
0.92818  
0.92812  
0.928  
0.77698  
0.75351  
0.73149  
0.71079  
0.69133  
0.67301  
0.65576  
0.63949  
0.62415  
0.60968  
0.596  
136.66  
135.09  
133.5  
23.891  
25.447  
26.99  
57.477  
56.245  
54.986  
53.699  
52.387  
51.047  
49.682  
48.291  
46.874  
45.43  
0.9019  
0.059068  
0.061644  
0.064279  
0.066975  
0.069736  
0.072563  
0.075459  
0.078426  
0.081467  
0.084583  
0.087778  
0.091053  
0.094411  
0.097853  
0.90396  
0.90588  
0.90767  
0.90935  
0.91092  
0.91238  
0.91375  
0.91502  
0.9162  
131.89  
130.25  
128.59  
126.9  
28.519  
30.038  
31.546  
33.046  
34.537  
36.022  
37.501  
38.975  
40.446  
41.914  
43.38  
169.28  
167.97  
166.66  
165.35  
164.04  
162.73  
161.42  
160.1  
0.92783  
0.92761  
0.92734  
0.92701  
0.92664  
0.92622  
0.92576  
0.92525  
0.9247  
125.17  
123.42  
121.64  
119.83  
117.98  
116.1  
0.58307  
0.57085  
0.55929  
0.54834  
0.53797  
0.52814  
43.959  
42.461  
40.935  
39.381  
37.797  
0.9173  
158.78  
157.45  
156.12  
154.77  
153.42  
0.91832  
0.91927  
0.92014  
0.92095  
0.92411  
0.92348  
0.92282  
114.18  
112.22  
110.23  
44.846  
46.311  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
13 of 19  
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
9. Package outline  
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CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
14 of 19  
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
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Fig 11. Package outline SOT1227B  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
15 of 19  
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
10. Handling information  
10.1 ESD Sensitivity  
Table 14. ESD sensitivity  
ESD model  
Class  
Human Body Model (HBM); According JEDEC standard JESD22-A114F 1B [1]  
[1] Classification 1B is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after  
exposure to an ESD pulse of 1000 V.  
11. Abbreviations  
Table 15. Abbreviations  
Acronym  
AWG  
Description  
American Wire Gauge  
CW  
Continuous Wave  
EMC  
ElectroMagnetic Compatibility  
ElectroStatic Discharge  
Gallium Nitride  
ESD  
GaN  
HEMT  
SMD  
High Electron Mobility Transistor  
Surface-Mounted Device  
Voltage Standing-Wave Ratio  
Worldwide Interoperability for Microwave Access  
VSWR  
WiMAX  
12. Revision history  
Table 16. Revision history  
Document ID  
Release date Data sheet status  
Change notice Supersedes  
CLF1G0060-30_1G0060S-30 v.4 20130620  
Objective data sheet -  
CLF1G0060-30_1G0060S-30 v.3  
Modifications:  
• Figure 7 on page 10: value IDq corrected to 150.  
CLF1G0060-30_1G0060S-30 v.3 20130327  
CLF1G0060-30_1G0060S-30 v.2 20130129  
CLF1G0060-30_1G0060S-30 v.1 20121008  
Objective data sheet -  
Objective data sheet -  
Objective data sheet -  
CLF1G0060-30_1G0060S-30 v.2  
CLF1G0060-30_1G0060S-30 v.1  
-
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
16 of 19  
 
 
 
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
13.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
13.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
17 of 19  
 
 
 
 
 
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
CLF1G0060-30_1G0060S-30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Objective data sheet  
Rev. 4 — 20 June 2013  
18 of 19  
 
 
CLF1G0060-30; CLF1G0060S-30  
NXP Semiconductors  
Broadband RF power GaN HEMT  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 2  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
1.1  
1.2  
1.3  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
7.1  
7.2  
7.3  
7.3.1  
7.3.2  
7.3.3  
7.4  
Application information. . . . . . . . . . . . . . . . . . . 4  
Demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Application test results . . . . . . . . . . . . . . . . . . . 7  
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8  
1-Tone CW RF performance. . . . . . . . . . . . . . . 8  
1-Tone pulsed RF performance . . . . . . . . . . . . 9  
2-Tone CW performance . . . . . . . . . . . . . . . . 10  
Bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10  
Ruggedness in class-AB operation . . . . . . . . 10  
Load pull impedance information . . . . . . . . . . 10  
Packaged S-parameter data. . . . . . . . . . . . . . 12  
8.1  
8.2  
8.3  
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14  
Handling information. . . . . . . . . . . . . . . . . . . . 16  
ESD Sensitivity. . . . . . . . . . . . . . . . . . . . . . . . 16  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16  
10  
10.1  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 18  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2013.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 20 June 2013  
Document identifier: CLF1G0060-30_1G0060S-30  
 

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