ES1CT/R [NXP]
DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC PACKAGE-2, Signal Diode;
| 型号： | ES1CT/R |
| 厂家： | 
NXP |
| 描述： | DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC PACKAGE-2, Signal Diode 局域网 光电二极管 |
| 文件： | 总12页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
ES1 series
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
2000 Feb 14
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
FEATURES
DESCRIPTION
• Glass passivated
DO-214AC surface mountable package with glass
passivated chip.
• High maximum operating temperature
• Ideal for surface mount automotive applications
• Low leakage current
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
• Excellent stability
• Guaranteed avalanche energy absorption capability
• UL 94V-O classified plastic package
• Shipped in 12 mm embossed tape
• Marking: cathode, date code, type code
• Easy pick and place.
cathode
olumns
band
k
a
MSA474
Top view
Side view
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
ES1A
−
−
−
−
50
V
V
V
V
ES1B
100
150
200
ES1C
ES1D
VR
continuous reverse voltage
ES1A
−
−
−
−
50
V
V
V
V
ES1B
100
150
200
ES1C
ES1D
VRMS
root mean square voltage
ES1A
−
−
−
−
−
35
70
105
140
1
V
V
V
V
A
ES1B
ES1C
ES1D
IF(AV)
IFSM
average forward current
averaged over any 20 ms period;
Ttp = 120 °C; see Fig.2
non-repetitive peak forward current
t = 8.3 ms half sine wave;
Tj = 25 °C prior to surge;
VR = VRRMmax
−
25
A
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
See Fig.3
2
2000 Feb 14
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 1 A; see Fig.4
TYP.
MAX.
1.1
UNIT
VF
IR
−
−
−
−
V
reverse current
VR = VRRMmax; see Fig.5
5
µA
µA
ns
VR = VRRMmax; Tj = 165 °C; see Fig.5
100
25
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.9
Cd
VR = 4 V; f = 1 MHz; see Fig.6
19
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
27
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point; see Fig.7
thermal resistance from junction to ambient
K/W
K/W
K/W
note 1
note 2
100
150
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the ‘General Part of associated Handbook’.
2000 Feb 14
3
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
GRAPHICAL DATA
MCD821
MBK455
2
200
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
T
j
(°C)
1.5
100
1
0.5
0
0
0
0
40
80
120
160
T
200
(°C)
50
100
V
(%V
)
Rmax
R
tp
VR = VRRMmax; δ = 0.5; a = 1.57.
Device mounted as shown in Fig.8.
Solid line: Al2O3 printed-circuit board.
Dotted line: epoxy printed-circuit board.
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3 Maximum permissible junction temperature
as a function of reverse voltage.
MCD790
MCD804
2
2
10
10
handbook, halfpage
handbook, halfpage
I
I
R
F
(µA)
(A)
10
T = 165 °C
j
10
1
1
−1
−1
10
10
−2
−2
10
10
T = 25 °C
j
−3
−3
10
10
0
1
2
3
0
20
40
60
80
(%V
100
)
V
(V)
F
V
R
Rmax
Tj = 25 °C.
Fig.4 Forward current as a function of forward
voltage; typical values.
Fig.5 Reverse current as a function of reverse
voltage; typical values.
2000 Feb 14
4
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
MCD799
MBL120
2
2
10
10
handbook, halfpage
handbook, halfpage
Z
C
d
th j-tp
(K/W)
(pF)
10
10
1
10
1
1
−2
−1
2
2
3
4
10
1
10
10
10
10
10
10
t
(ms)
V
(V)
p
R
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
Fig.7 Transient thermal impedance as a function
of pulse width.
50
4.5
50
2.5
1.25
MSB213
Dimensions in mm.
Material: Al2O3 or epoxy-glass.
Fig.8 Printed-circuit board for surface mounting.
2000 Feb 14
5
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.9 Test circuit and reverse recovery time waveform and definition.
2000 Feb 14
6
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
PACKAGE OUTLINE
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD124
H
D
A
A
1
c
Q
E
b
(1)
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
H
Q
1
1.6
1.4
2.3
2.0
4.5
4.3
2.8
2.4
5.5
5.1
3.3
2.7
mm
0.05
0.2
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD124
DO-214AC
99-10-22
2000 Feb 14
7
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 14
8
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
NOTES
2000 Feb 14
9
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
NOTES
2000 Feb 14
10
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
NOTES
2000 Feb 14
11
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69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603502/250/01/pp12
Date of release: 2000 Feb 14
Document order number: 9397 750 06781
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