GQM2195C2E1R5BB12D [NXP]
RF Power GaN Transistor;
| 型号： | GQM2195C2E1R5BB12D |
| 厂家： | 
NXP |
| 描述： | RF Power GaN Transistor 电容器 |
| 文件： | 总9页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3G26H501W17S
Rev. 2, 01/2020
NXP Semiconductors
Technical Data
RF Power GaN Transistor
This 56 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 2496 to 2690 MHz.
A3G26H501W17S
This part is characterized and performance is guaranteed for applications
operating in the 2496 to 2690 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
2496–2690 MHz, 56 W AVG., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
2600 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
DD = 48 Vdc, IDQA = 350 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
V
G
P3dB
(dBm)
ACPR
(dBc)
ps
D
(2)
Frequency
2496 MHz
2590 MHz
2690 MHz
(dB)
14.0
14.5
14.4
(%)
46.3
45.1
47.4
56.6
–35.4
–36.6
–33.2
57.1
56.0
NI--780S--4S2S
1. All data measured in fixture with device soldered to heatsink.
2. Data measured at pulsed CW, 10 sec(on), 10% duty cycle.
6
5
VBW
A
Features
Carrier
High terminal impedances for optimal broadband performance
Advanced high performance in--package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating
conditions
RF /V
1
2
RF /V
outA DSA
inA GSA
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
VBW
B
(Top View)
Figure 1. Pin Connections
2019–2020 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
125
Unit
Vdc
Vdc
Vdc
mA
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
–8, 0
GS
DD
Operating Voltage
V
0 to +55
66
Maximum Forward Gate Current, I
Storage Temperature Range
, @ T = 25C
G (A+B)
I
GMAX
C
T
stg
–65 to +150
–55 to +150
–55 to +225
275
Case Operating Temperature Range
T
C
C
Operating Active Die Surface Temperature Range
T
J
C
(1)
Maximum Channel Temperature
T
CH
C
Table 2. Thermal Characteristics
Characteristic
Symbol
(IR)
Value
Unit
(2)
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
R
0.90
C/W
JC
Case Temperature 93C, P = 80 W
D
(3)
Thermal Resistance by Finite Element Analysis, Channel--to--Case
R
CHC
1.23
C/W
Case Temperature 90C, P = 80 W
(FEA)
D
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C3
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Drain--Source Breakdown Voltage
(V = –8 Vdc, I = 24 mAdc)
V
—
—
Vdc
(BR)DSS
Carrier
Peaking
150
150
GS
D
(V = –8 Vdc, I = 42 mAdc)
GS
D
On Characteristics — Side A, Carrier
Gate Threshold Voltage
V
–3.5
–3.1
–9.9
–2.8
–2.7
—
–2.3
–2.4
—
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 20 mAdc)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I = 350 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
DA
Gate--Source Leakage Current
(V = 150 Vdc, V = –8 Vdc)
I
mAdc
GSS
DS
GS
On Characteristics — Side B, Peaking
Gate Threshold Voltage
V
–3.8
–9.9
–3.3
—
–2.3
—
Vdc
GS(th)
(V = 10 Vdc, I = 20 mAdc)
DS
D
Gate--Source Leakage Current
(V = 150 Vdc, V = –8 Vdc)
I
mAdc
GSS
DS
GS
1. Reliability tests were conducted at 225C. Operations with T at 275C will reduce median time to failure.
CH
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. R
(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated
CHC
[A + B/(T + 273)]
by the expression MTTF (hours) = 10
, where T is the channel temperature in degrees Celsius, A = –11.1 and B = 8366.
4. Each side of device measured separately.
(continued)
A3G26H501W17S
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In NXP Doherty Production Test Fixture, 50 ohm system) V = 48 Vdc, I
= 350 mA, V = –5 Vdc,
GSB
DD
DQA
P
= 56 W Avg., f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]
Power Gain
G
12.7
37.0
13.7
40.7
15.7
—
dB
%
ps
D
Drain Efficiency
P
@ 3 dB Compression Point, CW
P3dB
55.5
56.4
—
dBm
dBc
out
Adjacent Channel Power Ratio
ACPR
—
–33.2
–29.0
Wideband Ruggedness (In NXP Doherty Production Test Fixture, 50 ohm system) I
= 350 mA, V
= –5 Vdc, f = 2590 MHz, Additive
GSB
DQA
White Gaussian Noise (AWGN) with 10 dB PAR
ISBW of 400 MHz at 55 Vdc, 194 W Avg. Modulated Output Power
(8 dB Input Overdrive from 56 W Avg. Modulated Output Power)
No Device Degradation
Typical Performance (In NXP Doherty Production Test Fixture, 50 ohm system) V = 48 Vdc, I
= 350 mA, V = –5 Vdc,
GSB
DD
DQA
2496–2690 MHz Bandwidth
(2)
P
@ 3 dB Compression Point
P3dB
—
—
500
–12
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 2496–2690 MHz bandwidth)
VBW Resonance Point
VBW
—
160
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 194 MHz Bandwidth @ P = 56 W Avg.
G
—
—
0.4
—
—
dB
out
F
Gain Variation over Temperature
G
0.018
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P1dB
—
0.008
—
dB/C
(–40C to +85C)
Table 5. Ordering Information
Device
Tape and Reel Information
Package
NI--780S--4S2S
A3G26H501W17SR3
R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel
1. Part internally input matched.
2. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set V to –5 V
GS
2. Turn on V to nominal supply voltage (48 V)
DS
3. Increase V until I current is attained
GS
DS
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce V down to –5 V
GS
3. Reduce V down to 0 V (Adequate time must be allowed
DS
for V to reduce to 0 V to prevent severe damage to device.)
DS
4. Turn off V
GS
A3G26H501W17S
RF Device Data
NXP Semiconductors
3
C27 C28
V
DDA
C26
C25
C29
C9
V
GGA
C19
C36
C7
C15
C35
R2
C3
C31
C4
C1
R1
Cꢀ11
C17
C33
Z1
C13
C6
C12
C2
C5
cut out
area
C32
C14
R3
C8
A3G26H501W17S
Rev. 1
C16
C34
C20
C22
C24
V
DDB
C10
C23
C21
V
GGB
C30
aaa--034242
Figure 2. A3G26H501W17S Production Test Circuit Component Layout
Table 6. A3G26H501W17S Production Test Circuit Component Designations and Values
Part
Description
6.8 pF Chip Capacitor
Part Number
Manufacturer
C1, C2, C7, C8, C15, C16, C35
GQM2195C2E6R8BB12D
GQM2195C2ER80BB12D
GQM2195C2E1R2BB12D
GQM2195C2E1R6BB12D
GQM2195C2E1R5BB12D
GRM31CR71H225KA88L
GQM2195C2E3R9BB12D
GQM2195C2E2R2BB12D
GQM2195C2ER60BB12D
GQM2195C2ER50BB12D
GQM2195C2ER20BB12D
C4532X7S2A475M
Murata
C3, C33
C4
0.8 pF Chip Capacitor
1.2 pF Chip Capacitor
1.6 pF Chip Capacitor
1.5 pF Chip Capacitor
2.2 F Chip Capacitor
3.9 pF Chip Capacitor
2.2 pF Chip Capacitor
0.6 pF Chip Capacitor
0.5 pF Chip Capacitor
0.2 pF Chip Capacitor
4.7 F Chip Capacitor
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
TDK
C5
C6
C9, C10
C11
C12
C13
C14
C17, C31
C19, C20
C21, C22, C23, C24, C25, C26, C27, C28 15 F Chip Capacitor
C5750X7S2A156M
TDK
C29, C30
C32
220 F, 100 V Electrolytic Capacitor
MCGPR100V227M16X26
GQM2195C2E1R0BB12D
GQM2195C2E8R2BB12D
C3225CH2A153J
Multicomp
Murata
Murata
TDK
1.0 pF Chip Capacitor
C34
8.2 pF Chip Capacitor
C36
15 nF Chip Capacitor
R1
50 , 8 W Termination Chip Resistor
3.3 , 1/4 W Chip Resistor
C8A50Z4A
Anaren
Vishay
Anaren
MTL
R2, R3
Z1
CRCW08053R30JNEA
2300–2700 MHz Band, 5 dB Directional Coupler X3C25P1-05S
Rogers RO3035, 0.020, = 3.6
PCB
—
r
Note: Component number C18 is intentionally omitted.
A3G26H501W17S
RF Device Data
NXP Semiconductors
4
C27 C28
V
DDA
C26
C25
C29
C9
V
GGA
C19
C35
C7
C15
C18*
C31
R2
C4
C1
R1
C3
Cꢀ11
C17
C33
C16
Z1
Q1
C13
C6
C12
C2
C5
C32
C14
R3
C8
A3G26H501W17S
Rev. 1
D118030
C34
C22
C24
V
DDB
C10
C20
C21
C23
V
GGB
C30
aaa--034243
*C18 is mounted vertically.
Note: All data measured in fixture with device soldered to heatsink.
Figure 3. A3G26H501W17S Characterization Test Circuit Component Layout
Table 7. A3G26H501W17S Characterization Test Circuit Component Designations and Values
Part
C1, C2, C7, C8, C15
Description
6.8 pF Chip Capacitor
Part Number
Manufacturer
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
TDK
GQM2195C2E6R8BB12D
GQM2195C2ER80BB12D
GQM2195C2E1R2BB12D
GQM2195C2E1R6BB12D
GQM2195C2E1R5BB12D
GRM31CR71H225KA88L
GQM2195C2E3R9BB12D
GQM2195C2E2R2BB12D
GQM2195C2ER60BB12D
GQM2195C2ER50BB12D
GQM2195C2ER30BB12D
GQM2195C2ER20BB12D
C4532X7S2A475M
C3, C33
C4
0.8 pF Chip Capacitor
1.2 pF Chip Capacitor
1.6 pF Chip Capacitor
1.5 pF Chip Capacitor
2.2 F Chip Capacitor
3.9 pF Chip Capacitor
5.6 pF Chip Capacitor
0.6 pF Chip Capacitor
0.5 pF Chip Capacitor
0.3 pF Chip Capacitor
0.2 pF Chip Capacitor
4.7 F Chip Capacitor
C5
C6
C9, C10
C11
C12
C13
C14
C16
C17, C31
C18, C19, C20
C21, C22, C23, C24, C25, C26, C27, C28 15 F Chip Capacitor
C5750X7S2A156M
TDK
C29, 30
C32
C34
C35
Q1
220 F, 100 V Electrolytic Capacitor
MCGPR100V227M16X26
GQM2195C2E1R0BB12D
GQM2195C2E8R2BB12D
C3225CH2A153J
Multicomp
Murata
Murata
TDK
1.0 pF Chip Capacitor
8.2 pF Chip Capacitor
15 nF Chip Capacitor
RF Power LDMOS Transistor
50 , 8 W Termination Chip Resistor
3.3 , 1/4 W Chip Resistor
A3G26H501W17S
NXP
R1
C8A50Z4A
Anaren
Vishay
Anaren
MTL
R2, R3
Z1
CRCW08053R30JNEA
2300–2700 MHz Band, 5 dB Directional Coupler X3C25P1-05S
Rogers RO3035, 0.020, = 3.6 D118030
PCB
r
A3G26H501W17S
RF Device Data
NXP Semiconductors
5
PACKAGE DIMENSIONS
A3G26H501W17S
RF Device Data
NXP Semiconductors
6
A3G26H501W17S
RF Device Data
NXP Semiconductors
7
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
.s2p File
Development Tools
Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
June 2019
Aug. 2019
Initial release of data sheet
Fig. 2, Production Test Circuit Component Layout: C18 component omitted, p. 4
Table 6, Production Test Circuit Component Layout Parts List: C18 component omitted, updated the part
number and description for R1, added note, p. 4
Table 7, Characterization Component Layout Parts List: updated the part number and description for R1,
p. 5
2
Jan. 2020
Functional Tests table: updated Drain Efficiency Min value from 35.5% to 37.0% to reflect tightened
minimum test specification limit, p. 3
A3G26H501W17S
RF Device Data
NXP Semiconductors
8
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us:
Home Page:
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service
names are the property of their respective owners.
E 2019–2020 NXP B.V.
Document Number: A3G26H501W17S
Rev. 2, 01/2020
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