IP4386CX4 [NXP]

Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4; 集成高性能ESD保护二极管IEC61000-4-2 ， 4级


型号：	IP4386CX4
厂家：	NXP
描述：	Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4 集成高性能ESD保护二极管IEC61000-4-2 ， 4级二极管
文件：	总16页 (文件大小：84K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IP4085CX4; IP4385CX4;

IP4386CX4; IP4387CX4

Integrated high-performance ESD-protection diodes to

IEC61000-4-2, level 4

Rev. 01 — 26 March 2009

Product data sheet

1. Product proﬁle

1.1 General description

IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4 are designed to protect appliances

from destruction by either:

• ElectroStatic Discharges (ESD) of ±30 kV, far exceeding IEC 61000-4-2 standard,

level 4

• overvoltage

• wrong polarity

Each device has a single high-performance ESD-protection diode with the anode and

cathode each connected to two solder balls. The IP4085CX4, IP4385CX4, IP4386CX4

and IP4387CX4 are fabricated using monolithic silicon technology in a Wafer-Level

Chip-Scale Package (WLCSP) with a pitch of 0.4 mm (IP438xCX4) or 0.5 mm

(IP4085CX4).

1.2 Features

I Pb-free, RoHS and Dark Green compliant

I Single integrated high-performance ESD-protection diode

I Surge immunity according to IEC 61000-4-5 (8/20 µs) up to 60 A (IP4085CX4)

I ESD protection of >30 kV contact discharge, far exceeding IEC 61000-4-2 standard,

level 4

I Small 2 × 2 solder ball WLCSP package with 0.4 mm or 0.5 mm pitch

1.3 Applications

I General purpose ESD-protection such as for charger interfaces in:

N Cellular and PCS mobile handsets

N Cordless telephones

N Wireless data (WAN/LAN) systems

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

2. Pinning information

IP4085CX4

IP438xCX4

ball A1

index area

001aaj238

Transparent top view

Fig 1. Pin conﬁguration IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4

Table 1.

Pinning

Description

diode cathode

diode anode

A1 and A2

B1 and B2

3. Ordering information

Table 2.

Ordering information

Type number

Package

Name

Description

Version

IP4085CX4/LF

IP4385CX4/LF

IP4386CX4/LF

IP4387CX4/LF

WLCSP4

wafer level chip-size package: 4 bumps; 0.91 × 0.91 × 0.65 mm

wafer level chip-size package: 4 bumps; 0.76 × 0.76 × 0.61 mm

IP4085CX4/LF

IP438xCX4/LF

4. Functional diagram

001aaj239

Fig 2. Schematic diagram IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

2 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

5. Limiting values

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_CC

supply voltage

IP4085CX4/LF;

IP4386CX4/LF

−0.5

+14

IP4385CX4/LF

IP4387CX4/LF

all pins to ground

contact discharge

air discharge

−0.5

+5.5

+8.0

V_ESD

electrostatic discharge voltage

[1]

−30

−15

+30

+15

IEC 61000-4-2, level 4;

all pins to ground

contact discharge

air discharge

−8

−15

+15

I_PP

peak pulse current

IEC 61000-4-5;

t_p= 8/20 µs

IP4085CX4

IP4385CX4;

IP4387CX4

IP4386CX4

I_FSM

non-repetitive peak forward

current

10 pulses; 1 pulse per

second

IP4085CX4;

IP4386CX4;

t_p= 2 ms

8.5

3.5

IP4085CX4;

IP4386CX4;

t_p= 5 ms

IP4085CX4;

IP4386CX4;

t_p= 100 ms

IP4385CX4;

IP4387CX4;

t_p= 2 ms

IP4385CX4;

IP4387CX4;

t_p= 5 ms

IP4385CX4;

IP4387CX4;

t_p= 100 ms

[2]

[3]

P_tot

total power dissipation

forward conducting

IP4085CX4

IP4385CX4;

IP4386CX4;

IP4387CX4

0.7

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

3 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

Table 3.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

T_stg

Parameter

Conditions

Min

−55

Max

+150

260

Unit

°C

storage temperature

peak reﬂow temperature

ambient temperature

T_{reﬂow(peak)}

T_amb

10 s maximum

°C

−30

+85

°C

[1] Device tested with over 1000 pulses of ±30 kV contact discharges, according to the IEC 61000-4-2 model.

[2] Severe self-heating demands a heat-dissipation optimized PCB to prevent the device from de-soldering. For ambient temperatures

above 50 °C, the guaranteed life time is 48 hours at 0.7 W, assuming R_thto be 130 K/W as speciﬁed in Table 4.

[3] Permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time.

6. Thermal characteristics

Table 4.

Symbol

R_th(j-a)

Thermal characteristics

Parameter

Conditions

Typ

Unit

thermal resistance from junction on a 2-layer PCB

to ambient

[1]

IP4085CX4;

130

K/W

IP4385CX4;

IP4386CX4;

IP4387CX4

[1] Depends on details of layout.

7. Characteristics

Table 5.

Electrical characteristics

T_amb= 25 °C; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_BR

breakdown voltage

I_R= 15 mA

IP4085CX4; IP4386CX4

IP4385CX4

7.0

IP4387CX4

V_CL(trt)

transient clamping voltage

I_R= 1 A; T_amb≤ 85 °C at surge peak

pulse according to IEC 61000-4-5

IP4085CX4

IP4385CX4

IP4386CX4

IP4387CX4

20.0

10.0

20.0

13.0

I_LR

reverse leakage current

IP4085CX4; IP4385CX4

IP4386CX4

V_R= +5.0 V

V_R= +14.0 V

V_R= +8.0 V

200

800

IP4387CX4

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

4 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

Table 5.

Electrical characteristics …continued

T_amb= 25 °C; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

C_d

diode capacitance

IP4085CX4

DC bias V_R= 0 V; f = 1 MHz

180

450

160

290

IP4385CX4

IP4386CX4

IP4387CX4

V_Fd

diode forward voltage

IP4085CX4

I_F= 850 mA

_amb≥ +25 °C

−30 °C ≤ T_amb≤ +85 °C

_amb≥ +25 °C

−30 °C ≤ T_amb≤ +85 °C

_amb≥ +25 °C

−30 °C ≤ T_amb≤ +85 °C

_amb≥ +25 °C

−30 °C ≤ T_amb≤ +85 °C

1.15

1.3

IP4385CX4

IP4386CX4

IP4387CX4

1.0

1.1

1.15

1.3

1.10

1.25

8. Application information

8.1 Forward current DC clamping voltage

The forward current DC clamping voltage is of interest when protecting circuits from

voltage sources with the wrong polarity. Figure 3 shows the basic measurement setup.

001aaj240

Fig 3. Measuring DC clamping voltage with forward current

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

5 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

001aaj241

001aaj242

1.1

(V)

(1)

(2)

(3)

1.0

(1)

(2)

(3)

0.9

0.8

0.7

0.9

0.8

0.7

0.2

0.4

0.6

0.8

1.0

0.2

0.4

0.6

0.8

1.0

(A)

I (A)

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

Fig 4. DC clamping voltage as a function of forward

current; IP4085CX4

Fig 5. DC clamping voltage as a function of forward

current; IP4385CX4

001aaj243

001aaj244

1.1

(V)

(1)

(2)

(3)

(1)

(2)

(3)

1.0

0.9

0.8

0.7

0.9

0.8

0.7

0.2

0.4

0.6

0.8

1.0

0.2

0.4

0.6

0.8

1.0

(A)

I (A)

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

Fig 6. DC clamping voltage as a function of forward

current; IP4386CX4

Fig 7. DC clamping voltage as a function of forward

current; IP4387CX4

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

6 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

8.2 Peak clamping voltage

The peak clamping voltage for forward and reverse current pulses of 8/20 µs

(IEC 61000-4-5) is signiﬁcant when protecting circuits from power surges due to voltage

discharges. The current pulse shape over time is shown in Figure 9. The basic

measurement setup for forward current and reverse current pulses respectively are shown

in Figure 8 and Figure 14.

CL(M)

001aaj245

Fig 8. Measuring peak clamping voltage with forward current

001aaj558

120

100 % I ; 8 µs

(%)

−t

50 % I ; 20 µs

t (µs)

Fig 9. 8/20 µs current pulse waveform according to IEC 61000-4-5

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

7 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

001aaj247

001aaj248

CL(M)

(V)

CL(M)

(V)

(3)

(1)

(3)

(2)

(1)

(2)

(A)

I (A)

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

Fig 10. Peak clamping voltage as a function of forward

current; IP4085CX4

Fig 11. Peak clamping voltage as a function of forward

current; IP4385CX4

001aaj249

001aaj250

(3)

(2)

(1)

CL(M)

(V)

CL(M)

(V)

(2)

(3)

(1)

(A)

I (A)

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

Fig 12. Peak clamping voltage as a function of forward

current; IP4386CX4

Fig 13. Peak clamping voltage as a function of forward

current; IP4387CX4

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

8 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

CL(M)

001aaj246

Fig 14. Measuring peak clamping voltage with reverse current

001aaj251

8.75

001aaj252

CL(M)

(V)

(2)

CL(M)

(V)

8.50

8.25

8.00

7.75

7.50

(2)

(1)

(3)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

(A)

1.6

0.4

0.8

1.2

1.6

I (A)

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

Fig 15. Peak clamping voltage as a function of reverse

current; IP4085CX4

Fig 16. Peak clamping voltage as a function of reverse

current; IP4385CX4

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

9 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

001aaj253

001aaj254

12.2

(2)

CL(M)

(V)

CL(M)

(V)

(2)

11.8

11.4

11.0

(1)

(3)

(1)

(3)

0.3

0.7

1.1

1.5

0.4

0.8

1.2

1.6

(A)

I (A)

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

(1) T_amb= +25 °C.

(2) T_amb= +85 °C.

(3) T_amb= −30 °C.

Fig 17. Peak clamping voltage as a function of reverse

current; IP4386CX4

Fig 18. Peak clamping voltage as a function of reverse

current; IP4387CX4

Remark: Measurements done on a heat-dissipation optimized PCB with massive copper

area under the DUT.

9. Marking

ball A1

index area

lot/date code information

(characters are marked

upside down)

001aaj255

Transparent top view

Fig 19. Marking of IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

10 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

10. Package outline

WLCSP4: wafer level chip-size package; 4 bumps; 0.91 x 0.91 x 0.65 mm

IP4085CX4/LF

ball A1

index area

detail X

C A

ball A1

index area

0.5

scale

1 mm

Dimensions

Unit

max 0.70 0.26 0.37 0.96 0.96

mm nom 0.65 0.24 0.32 0.91 0.91 0.5 0.005 0.02

min 0.60 0.22 0.27 0.86 0.86

ip4085cx4_lf_po

Issue date

References

Outline

version

European

projection

IEC

JEDEC

JEITA

IP4085CX4/LF

08-12-04

Fig 20. Package outline IP4085CX4/LF (WLCSP4)

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

11 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

WLCSP4: wafer level chip-size package; 4 bumps; 0.76 x 0.76 x 0.61 mm

IP438xCX4/LF

ball A1

index area

detail X

C A

ball A1

index area

0.25

0.5 mm

scale

Dimensions

Unit

max 0.66 0.22 0.31 0.81 0.81

mm nom 0.61 0.20 0.26 0.76 0.76 0.4 0.005 0.02

min 0.56 0.18 0.21 0.71 0.71

ip438xcx4_lf_po

Issue date

References

Outline

version

European

projection

IEC

JEDEC

JEITA

IP438xCX4/LF

08-12-04

Fig 21. Package outline IP438xCX4/LF (WLCSP4)

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

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IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

11. Design and assembly recommendations

11.1 PCB design guidelines

For optimum performance it is recommended to use a Non-Solder Mask PCB Design

(NSMD), also known as a copper-deﬁned design, incorporating laser-drilled micro-vias

connecting the ground pads to a buried ground-plane layer. This results in the lowest

possible ground inductance and provides the best high frequency and ESD performance.

For this case, refer to Table 6 for the recommended PCB design parameters.

Table 6.

Recommended PCB design parameters

Parameter

Value or Speciﬁcation

200 µm

PCB pad diameter

Micro-via diameter

Solder mask aperture diameter

Copper thickness

Copper ﬁnish

100 µm (0.004 inch)

370 µm

20 µm to 40 µm

AuNi

PCB material

FR4

11.2 PCB assembly guidelines for Pb-free soldering

Table 7.

Assembly recommendations

Parameter

Value or Speciﬁcation

330 µm

Solder screen aperture diameter

Solder screen thickness

Solder paste: Pb-free

Solder/ﬂux ratio

100 µm (0.004 inch)

SnAg (3 % to 4 %) Cu (0.5 % to 0.9 %)

50/50

Solder reﬂow proﬁle

see Figure 22

(°C)

reflow(peak)

250

230

217

cooling rate

pre-heat

t (s)

001aai943

The device is capable of withstanding at least three reﬂows of this proﬁle.

Fig 22. Pb-free solder reﬂow proﬁle

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

13 of 16

IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

Table 8.

Symbol

T_{reﬂow(peak)}peak reﬂow temperature

Reﬂow soldering process characteristics

Parameter

Conditions

Min

230

Typ

Max Unit

260

180

°C

t₁

time 1

time 2

time 3

time 4

time 5

soak time

t₂

time during T ≥ 250 °C

time during T ≥ 230 °C

time during T > 217 °C

t₃

t₄

150

540

−6

t₅

dT/dt

rate of change of

temperature

cooling rate

pre-heat

°C/s

2.5

4.0

12. Abbreviations

Table 9.

Abbreviations

Description

Acronym

DUT

Device Under Test

FR4

Flame Retard 4

LAN

Local Area Network

Printed-Circuit Board

PCB

PCS

Personal Communication System

Restriction of Hazardous Substances

Wide Area Network

RoHS

WAN

WLCSP

Wafer-Level Chip-Scale Package

13. Revision history

Table 10. Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

IP4085_4385_4386_4387_CX4_1

20090326

Product data sheet

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

14 of 16

IP4085/4385/4386/4387/CX4

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Integrated high-performance ESD-protection diodes

14. Legal information

14.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

14.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

14.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

14.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

15. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

IP4085_4385_4386_4387_CX4_1

Product data sheet

Rev. 01 — 26 March 2009

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IP4085/4385/4386/4387/CX4

NXP Semiconductors

Integrated high-performance ESD-protection diodes

16. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8.1

8.2

Application information. . . . . . . . . . . . . . . . . . . 5

Forward current DC clamping voltage . . . . . . . 5

Peak clamping voltage . . . . . . . . . . . . . . . . . . . 7

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

11.1

11.2

Design and assembly recommendations . . . 13

PCB design guidelines . . . . . . . . . . . . . . . . . . 13

PCB assembly guidelines for Pb-free

soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

14.1

14.2

14.3

14.4

Contact information. . . . . . . . . . . . . . . . . . . . . 15

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 26 March 2009

Document identifier: IP4085_4385_4386_4387_CX4_1

IP4386CX4 [NXP]

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