J112 [NXP]
N-channel silicon field-effect transistors; N-沟道硅音响场效晶体管
| 型号： | J112 |
| 厂家： | 
NXP |
| 描述： | N-channel silicon field-effect transistors |
| 文件： | 总6页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
J111; J112; J113
N-channel silicon field-effect
transistors
July 1993
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
1
handbook, halfpage
2
3
d
• High speed switching
g
s
• Interchangeability of drain and
MAM042
source connections
• Low RDS on at zero gate voltage
PINNING
1 = gate
Fig.1 Simplified outline and symbol, TO-92.
2 = source
3 = drain
Note: Drain and source are
interchangeable.
QUICK REFERENCE DATA
J111
J112
J113
Drain-source voltage
Drain current
±VDS
max.
min.
max.
40
40
40
V
VDS = 15 V; VGS = 0
Total power dissipation
up to Tamb = 50 °C
IDSS
20
5
2
mA
mW
Ptot
400
400
400
Gate-source cut-off voltage
min.
max.
3
10
1
5
0.5
3
V
V
VDS = 5 V; ID = 1 µA
−VGS off
Drain-source on-state resistance
VDS = 0.1 V; VGS = 0
RDS on
max.
30
50
100
Ω
July 1993
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage
Gate-drain voltage
±VDS
−VGSO
−VGDO
IG
max.
max.
max.
max.
40 V
40 V
40 V
50 mA
Gate forward current (DC)
Total power dissipation
up to Tamb = 50 °C
Ptot
Tstg
Tj
max.
max.
400 mW
−65 to + 150 °C
150 °C
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient in free air
Rth j-a
=
250 K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
J111
1
J112
J113
Gate reverse current
−VGS = 15 V; VDS = 0
Drain cut-off current
VDS = 5 V; −VGS = 10 V
Drain saturation current
−IGSS
−IDSX
IDSS
max.
1
1
nA
nA
mA
V
max.
min.
min.
1
1
5
1
2
VDS = 15 V; VGS = 0
20
40
Gate-source breakdown voltage
−IG = 1 µA; VDS = 0
−V(BR)GSS
−VGS off
RDSon
40
40
Gate-source cut-off voltage
min.
3
1
5
0.5
3
V
V
V
DS = 5 V; ID = 1 µA
max.
10
Drain-source on-state resistance
DS = 0.1 V; VGS = 0
V
max.
30
50
100
Ω
July 1993
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Input capacitance
V
DS = 0; −VGS = 10 V; f = 1 MHz
Cis
Cis
typ.
6 pF
22 pF
28 pF
typ.
VDS = −VGS = 0; f = 1 MHz
max.
Feedback capacitance
VDS = 0; −VGS = 10 V; f = 1 MHz
Crs
typ.
3 pF
Switching times
test conditions
VDD = 10 V; VGS = 0 to VGSoff
−VGS off = 12 V; RL = 750 Ω for J111
−VGS off = 7 V; RL = 1550 Ω for J112
−VGS off = 5 V; RL = 3150 Ω for J113
Rise time
tr
typ.
typ.
typ.
typ.
6 ns
13 ns
15 ns
35 ns
Turn-on time
ton
tf
Fall time
Turn-off time
toff
V
V
= 0 V
GS
10%
90%
1 µF
k, halfpage
50 Ω
10 µF
V
i
DD
10 nF
R
L
V
GS off
t
t
off
on
SAMPLING
SCOPE
50 Ω
DUT
t
t
f
r
90%
10%
50 Ω
V
o
MBK289
MBK288
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
July 1993
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
b
b
c
D
d
E
e
e
L
L
1
1
1
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT54
TO-92
SC-43
July 1993
5
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
July 1993
6
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