J175 [NXP]

P-channel silicon field-effect transistors; P沟道硅音响场效晶体管


型号：	J175
厂家：	NXP
描述：	P-channel silicon field-effect transistors P沟道硅音响场效晶体管晶体晶体管开关瞄准线
文件：	总6页 (文件大小：37K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

J174; J175;

J176; J177

P-channel silicon field-effect

transistors

April 1995

Product speciﬁcation

File under Discrete Semiconductors, SC07

Philips Semiconductors

Product speciﬁcation

J174; J175;

J176; J177

P-channel silicon ﬁeld-effect transistors

DESCRIPTION

Silicon symmetrical p-channel

junction FETs in a plastic TO-92

envelope and intended for application

with analog switches, choppers,

commutators etc.

A special feature is the

interchangeability of the drain and

source connections.

handbook, halfpage

MAM388

PINNING

1 = source

2 = gate

3 = drain

Note: Drain and source are

interchangeable.

Fig.1 Simplified outline and symbol, TO-92.

QUICK REFERENCE DATA

Drain-source voltage

Gate-source voltage

Gate current

± V_DS

V_GSO

−I_G

max.

Total power dissipation

up to T_amb= 50 °C

P_tot

max.

400

J174

J175

J176

J177

Drain current

min.

max.

135

1.5

−V_DS= 15 V; V_GS= 0

−I_DSS

Drain-source ON-resistance

−V_DS= 0.1 V; V_GS= 0

R_{DS on}

max.

125

250

300

Ω

April 1995

Philips Semiconductors

Product speciﬁcation

J174; J175;

J176; J177

P-channel silicon ﬁeld-effect transistors

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage

Gate-source voltage

Gate-drain voltage

± V_DS

V_GSO

V_GDO

−I_G

max.

Gate current (DC)

Total power dissipation

up to T_amb= 50 °C

P_tot

T_stg

T_j

max.

400

−65 to +150

150

°C

Storage temperature range

Junction temperature

°C

THERMAL RESISTANCE

From junction to ambient in free air

R_{th j-a}

250

K/W

STATIC CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed

J174 J175 J176 J177

Gate cut-off current

_GS= 20 V; V_DS= 0

I_GSS

max.

1 nA

Drain cut-off current

−V_DS= 15 V; V_GS= 10 V

Drain current

−I_DSX

min.

1.5 mA

20 mA

−V_DS= 15 V; V_GS= 10 V

−I_DSS

max.

135

Gate-source breakdown voltage

I_G= 1 µA; V_DS= 0

V_(BR)GSS

V_{GS off}

R_DSon

min.

30 V

Gate-source cut-off voltage

min.

0.8 V

−I_D= 10 nA; V_DS= −15 V

max.

2.25 V

Drain-source ON-resistance

−V_DS= 0.1 V; V_GS= 0

max.

125

250 300 Ω

April 1995

Philips Semiconductors

Product speciﬁcation

J174; J175;

J176; J177

P-channel silicon ﬁeld-effect transistors

DYNAMIC CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed

Input capacitance, f = 1 MHz

_GS= 10 V; V_DS= 0 V

C_is

typ.

V_GS= V_DS= 0

Feedback capacitance, f = 1 MHz

V_GS= 10 V; V_DS= 0 V

C_rs

typ.

Switching times (see Fig.2 + 3)

Delay time

J174 J175 J176 J177

t_d

t_r

typ.

20 ns

25 ns

45 ns

20 ns

25 ns

45 ns

Rise time

Turn-on time

Storage time

Fall time

t_on

t_s

t_f

Turn-off time

t_off

Test conditions:

−V_DD

V_{GS off}

R_L

6 V

3 V

560 1200 2000 2900 Ω

V_{GS on}

0 V

−V

GSoff

handbook, halfpage

50 Ω

90%

INPUT

10%

out

10%

OUTPUT

D.U.T

90%

50 Ω

MBK293

MBK292

Fig.2 Switching times test circuit.

Fig.3 Input and output waveforms;

t_d+ t_r= t_on; t_s+ t_f= t_off.

April 1995

Philips Semiconductors

Product speciﬁcation

J174; J175;

J176; J177

P-channel silicon ﬁeld-effect transistors

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads

SOT54

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

5.2

5.0

0.48

0.40

0.66

0.56

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

2.5

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

97-02-28

SOT54

TO-92

SC-43

April 1995

Philips Semiconductors

Product speciﬁcation

J174; J175;

J176; J177

P-channel silicon ﬁeld-effect transistors

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

Short-form speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

The data in this speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

April 1995

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