KMZ52 [NXP]
Magnetic Field Sensor; 磁科幻场传感器
| 型号： | KMZ52 |
| 厂家： | 
NXP |
| 描述： | Magnetic Field Sensor |
| 文件： | 总12页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
KMZ52
Magnetic Field Sensor
Product specification
2000 Jun 09
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
FEATURES
PINNING
SYMBOL
• High sensitivity
PIN
DESCRIPTION
• Integrated compensation coil
• Integrated set/reset coil.
+Iflip2
1
2
flip coil
VCC2
bridge supply voltage
ground
GND2
+Icomp2
GND1
+Icomp1
−Icomp1
−VO1
3
APPLICATIONS
4
compensation coil
ground
5
• Navigation
6
compensation coil
compensation coil
bridge output voltage
bridge output voltage
flip coil
• Current and earth magnetic field measurement
• Traffic detection.
7
8
+VO1
9
DESCRIPTION
−Iflip1
10
11
12
13
14
15
16
The KMZ52 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two magnetoresistive
Wheatstone bridges physically offset from one another by
90° and integrated compensation and set/reset coils. The
integrated compensation coils allow magnetic field
measurement with current feedback loops to generate
outputs that are independent of drift in sensitivity. The
orientation of sensitivity may be set or changed (flipped) by
means of the integrated set/reset coils. A short current
pulse should be applied to the compensation coils to
recover (set) the sensor after exposure to strong disturbing
magnetic fields. A negative current pulse will reset the
sensor to reversed sensitivity. By use of periodically
alternated flipping pulses and a lock-in amplifier, the
output is made independent of sensor and amplifier offset.
+Iflip1
flip coil
VCC1
bridge supply voltage
compensation coil
bridge output voltage
bridge output voltage
flip coil
−Icomp2
−VO2
+VO2
−Iflip2
16
9
handbook, halfpage
pin 1 index
1
8
MBL201
Fig.1 Simplified outline SOT109-1.
2000 Jun 09
2
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
VCC
S
bridge supply voltage
−
5
8
V
sensitivity (uncompensated)
12
16
−
mV/V
--------------
kA/m
Voffset
Rbridge
Rcomp
Acomp
offset voltage per supply voltage
bridge resistance
−1.5
1
0
+1.5
3
mV/V
kΩ
2
compensation coil resistance
field factor of compensation coil; note 1
100
19
170
22
300
25
Ω
A/m
----------
mA
Rflip
Iflip
resistance of set/reset coil
1
2
3
Ω
recommended flipping current for stable operation; note 2
flip pulse duration; note 2
±800
±1000 ±1200 mA
100 µs
tflip
1
3
Notes
1. The compensation coil generates a field Hcomp = Acomp × Icomp in addition to the external field Hext. Sensor output will
become zero if Hext = Hcomp
.
2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see Chapter “Limiting values”.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCC
PARAMETER
MIN.
MAX.
UNIT
bridge supply voltage
total power dissipation
storage temperature
−
−
8
V
Ptot
130
+150
−125
15
mW
°C
Tstg
−65
−40
−
Tamb
maximum operating temperature
maximum compensation current
maximum flipping current
°C
Icomp
Iflip (max)
Pflip (max)
Visol
mA
mA
mW
V
−
1500
50
maximum flipping power dissipation
−
voltage between isolated systems:
flip coil and Wheatstone bridge;
compensation coil and Wheatsone bridge;
flip coil and compensation coil
−
60
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
terminal resistance from junction to ambient
105
K/W
2000 Jun 09
3
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
CHARACTERISTICS
Tbridge = 25 °C; VCC1 = VCC2 = 5 V; unless otherwise specified.
SYMBOL
VCC
PARAMETER
bridge supply voltage
CONDITIONS
note 1
MIN.
TYP. MAX. UNIT
−
5
8
V
H
field strength operating range in sensor
plane
−0.2
−
+0.2
kA/m
S
sensitivity
open circuit
12
16
−
mV/V
--------------
kA/m
TCS
kSX
temperature coefficient of sensitivity
sensitivity synchronism
Ts = −25 to +125 °C
−
0.31
100
−
%/K
%
note 2
92
−
108
−
TCVO
temperature coefficient of output voltage VCC = 5 V;
−0.4
%/K
Tbridge = −25 to +125 °C
Rbridge
bridge resistance
note 3
1
2
3
kΩ
TCRbridge
temperature coefficient of bridge
resistance
Tbridge = −25 to +125 °C;
note 4
−
0.3
−
%/K
Voffset
offset voltage per supply voltage
−1.5
−3
0
0
+1.5
+3
mV/V
TCVoffset
temperature coefficient of offset voltage Tbridge = −25 to +125 °C;
µ V/V
-------------
K
note 5
FH
hysteresis of output voltage
−
−
2
%FS
Rcomp
Acomp
resistance of compensation coil
field factor of compensation coil
note 6
100
19
170
22
300
25
Ω
A/m
----------
mA
Rflip
resistance of set/reset coil
note 7
1
2
3
Ω
TCRflip
temperature coefficient of resistance of
set/reset coil
Tflip = −25 to +125 °C
−
0.39
−
%/K
Iflip
recommended flipping current for stable
operation
±800
±1000 ±1200 mA
tflip
flip pulse duration
1
3
100
−
µs
Risol
isolating resistance
note 8
1
−
MΩ
V
Visol
voltage between isolated systems
isolating resistance between dice
operating frequency
note 8
−
−
50
−
Risol_dice
die 1 to die 2
1
−
MΩ
MHz
deg
deg
f
0
−
1
α
β
angle die-to-die
note 9
note 9
88
−5
90
0
92
+5
angle dice-to-package
Notes
1. Due to the ratiometric output, the same supply voltage (VCC) must be applied to both dice in one KMZ52 device.
A
comp1 × S1
2. k SX = 100 ×
%
------------------------------
comp2 × S2
A
3. Bridge resistance die 1: between pins 5 and 12; bridge resistance die 2: between pins 2 and 3.
R
– R
bridge(T1)
bridge(T2)
4.
.
TCRbridge = 100
--------------------------------------------------------------
Where T1 = –25°C; T2 = 125°C
Rbridge(T ) (T2 – T1)
1
2000 Jun 09
4
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
V
– V
offset(T1)
offset(T2)
TCVoffset
=
--------------------------------------------------------
Where T1 = –25°C; T = 125°C
.
2
5.
(T2 – T1)
6. Resistance of compensation coil die 1: between pins 6 and 7;
resistance of compensation coil die 2: between pins 4 to 13.
7. Resistance of set/reset coil die 1: between pins 10 and 11;
resistance of set/reset coil die 2: between pins 1 to 16.
8. Isolating resistance die 1: pins 7 and 8, 7 and 10 and 8 to 10;
isolating resistance die 2: pins 1 to 2, 1 to 4 and 2 to 4.
9. Angle die-to-die: die 2 is turned by 90 ±2 degrees in anticlockwise direction with respect to die 1;
angle dice-to-package: both dice in their fixed die-to-die position are tilted towards the package edges by
0 ±5 degrees.
2000 Jun 09
5
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
APPLICATION INFORMATION
If the angle α between external
magnetic field H and the long axis of
the package is zero, H is parallel to
the most sensitive direction of die 2
and perpendicular to the sensitive
direction of die 1. A magnetic field
turning clockwise (see Fig.2) thus
yields an output proportional to cos α
(Vout2) and an output proportional to
sin α (Vout1).
handbook, halfpage
16
9
Die 2
Die 1
y
x
1
8
MBL202
y
H
α
x
Fig.2 Angular relationship of dice.
−I
+V
−V
−I
V
+I
−I
+V
flip2
16
O2
15
O2
14
comp2
13
CC1
12
flip1
11
flip1
10
O1
9
Z
4
Z
Z
2
bridge
2
bridge
1
1
Z
3
1
2
3
4
5
6
7
8
MBL203
+I
V
GND2
+I
GND1
+I
−I
−V
O1
flip2
CC2
comp2
comp1
comp1
Fig.3 Simplified circuit diagram.
2000 Jun 09
6
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
PACKAGE OUTLINE
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
H
v
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-05-22
99-12-27
SOT109-1
076E07
MS-012
2000 Jun 09
7
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
DATA SHEET STATUS
PRODUCT
STATUS
DATA SHEET STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Jun 09
8
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
NOTES
2000 Jun 09
9
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
NOTES
2000 Jun 09
10
Philips Semiconductors
Product specification
Magnetic Field Sensor
KMZ52
NOTES
2000 Jun 09
11
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69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613520/01/pp12
Date of release: 2000 Jun 09
Document order number: 9397 750 07049
相关型号：
KMZ52,118
Magnetic Field Sensor, MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.2-0.2mT, RECTANGULAR, SURFACE MOUNT, PLASTIC, SO-16
NXP
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