LLE16350X [NXP]
NPN microwave power transistor; NPN微波功率晶体管
| 型号： | LLE16350X |
| 厂家： | 
NXP |
| 描述： | NPN microwave power transistor |
| 文件： | 总12页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
LLE16350X
NPN microwave power transistor
1997 Feb 03
Product specification
Supersedes data of September 1994
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
FEATURES
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
amplifier.
MODE OF
OPERATION (GHz)
f
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(Ω)
• Interdigitated structure provides
high emitter efficiency
Class AB (CW) 1.65
24
0.1
≥29
≥8
typ. 48 see Figs
8 and 9
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
PINNING - SOT437A
PIN
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
DESCRIPTION
1
2
3
collector
base
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
emitter connected to flange
APPLICATIONS
handbook, 4 columns
1
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.5 GHz and 1.8 GHz.
c
b
3
e
DESCRIPTION
2
MAM112
Top view
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 03
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN. MAX. UNIT
−
45
30
15
3
V
VCER
VCEO
VEBO
IC
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
input power
RBE = 220 Ω
open base
−
V
−
V
open collector
−
V
−
6
A
Pi
f = 1.65 GHz; VCE = 24 V; class AB
−
8
W
W
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
soldering temperature
Tmb = 75 °C
−
50
−65
−
+150 °C
200
235
°C
°C
Tsld
t ≤ 10 s; note 1
−
Note
1. Up to 0.2 mm from ceramic.
MBD760
MEA577
10
60
P
tot
(W)
I
C
(A)
40
20
0
Ι
ΙΙ
1
1
10
2
0
50
100
150
200
o
( C)
1
10
V
(V)
10
CE
T
mb
Tmb ≤ 75 °C.
(I) Region of permissible DC operation.
(II) Permissible extension provided RBE ≤ 220 Ω.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Feb 03
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
CONDITIONS
VALUE
max. 2
typ. 0.2
UNIT
K/W
K/W
thermal resistance from junction to mounting base Tj = 100 °C
thermal resistance from mounting base to heatsink
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
collector-emitter breakdown voltage IC = 15 mA; RBE = 220 Ω
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 20 V
−
3
mA
V(BR)CER
V(BR)CBO
V(BR)EBO
hFE
30
45
3
−
V
V
V
collector-base breakdown voltage
emitter-base breakdown voltage
DC current gain
IC = 15 mA
−
IE = 15 mA
−
IC = 1 A; VCE = 3 V
15
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.
MODE OF
OPERATION
f
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(Ω)
(GHz)
Class AB (CW)
1.65
24
0.1
≥29
typ. 32
≥8
typ. 9
typ. 48
see Figs 8
and 9
1997 Feb 03
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
30
30
0.8 7.7
2.5 2.5 5.0
5.0 3.0 4.0
12.0
0.7
2.0
2.8 3.5
5.2
3.0
40
40
8.0
5.0
0.7
2.5
2.7
4.0
5.0
4.7
2.7
2.5
MBD758
V
V
CC
BB
C5
C6
F1
L1
L2
input
output
C4
C1
C2
C3
R
r
MBD759
The test circuit is split into two independent halves, each being 30 × 40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.4 Prematching test circuit board.
5
1997 Feb 03
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
BIAS CIRCUIT
PREMATCHING TEST
CIRCUIT
V
CC
R1
C6
TR1
C5
F1
R2
P1
L2
R3
C7
D1
D2
L1
DUT
MEA600
Fig.5 Class AB bias circuit.
List of components (see Figs 4 and 5)
COMPONENT
DESCRIPTION
transistor, BDT91 or equivalent
VALUE
ORDERING INFORMATION
TR1
C1, C4
C2, C3
C5, C6
C7
DC blocking chip capacitor
trimmer capacitor
100 pF
ATC 100A101kp
Tekelec 727-1
Erie 1250-003
0.5 to 5.0 pF
1500 pF
feedthrough bypass capacitor
electrolytic capacitor
10 µF, >30 V
D1
diode BY239 or equivalent; note 1
diode BY239 or equivalent; note 2
D2
L1
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
L2
3 turns 0.5 mm copper wire;
internal diameter = 2 mm
P1
R1
R2
R3
F1
linear potentiometer
resistor
4.7 kΩ
100 Ω, 0.25 W
10 kΩ, 0.25 W
56 Ω, 0.25 W
resistor
resistor
ferrite bead
Philips tube, 12NC = 4330 030 43081
4.2 × 2.2 × 3.2 mm (4B1)
Rr
copper rivet
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
1997 Feb 03
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
MEA582
MEA581
40
20
handbook, halfpage
handbook, halfpage
P
L
(W)
10 mA
d
im
(dBc)
30
30
50 mA
I
=
CQ
100 mA
50 mA
10 mA
20
10
0
40
50
100 mA
0
2
4
6
0
10
20
30
P
i
(W)
P
(W)
o (av)
VCE = 24 V; f1 = 1650 MHz; f2 = 1650.2 MHz.
VCE = 24 V; f = 1650 MHz.
Fig.7 Intermodulation distortion as a function of
average output power.
Fig.6 Load power as a function of input power.
Input and optimum load impedances
VCE = 24 V; ICQ = 0.1 A (see Figs 8 and 9); typical values at PL = PL1.
f
Zi
ZL
(GHz)
(Ω)
(Ω)
1.50
1.55
1.60
1.65
1.70
1.75
1.80
4.15 + j4.45
5.3 + j3.8
6.2 + j2.45
6.1 + j0.7
5.1 − j0.6
3.9 − j1.1
2.9 − j1.1
4.6 − j1.0
4.2 − j0.85
3.8 − j0.8
3.4 − j0.8
3.05 − j0.9
2.75 − j1.0
2.5 − j1.15
1997 Feb 03
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
1
0.5
2
Z
0.2
i
5
1.5 GHz
10
+ j
1.65 GHz
0.2
0.5
2
5
10
0
∞
– j
1.8 GHz
10
5
0.2
2
0.5
MBD761
1
VCE = 24 V; Zo = 10 Ω; ICQ = 0.1 A.
Fig.8 Input impedance as a function of frequency; typical values at PL = PL1.
1
0.5
2
Z
L
0.2
5
10
+ j
– j
0.2
1.8 GHz
0.5
1
2
5
10
0
∞
1.65 GHz
1.5 GHz
10
5
0.2
2
0.5
MBD762
1
VCE = 24 V; Zo = 100 W; ICQ = 0.1 A.
Fig.9 Optimum load impedance as a function of frequency; typical values at PL = PL1.
8
1997 Feb 03
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
PACKAGE OUTLINE
19.1 max
6.5
max
0.13
max
1.7
max
4.8
2.3
2.0
max
seating
plane
14.22
1
0.25
M
4.5 min
6.5
6.2
O 3.3
3
4.5 min
2
MBB945
1.7 max
Dimensions in mm.
Torque on screws: max. 0.5 Nm.
Recommended screw: M3.
Recommended pitch for mounting screw: 19 mm.
Fig.10 SOT437A.
1997 Feb 03
9
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 03
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
NOTES
1997 Feb 03
11
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© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127121/00/04/pp12
Date of release: 1997 Feb 03
Document order number: 9397 750 01685
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