LLE18040X [NXP]
NPN microwave power transistor; NPN微波功率晶体管
| 型号： | LLE18040X |
| 厂家： | 
NXP |
| 描述： | NPN microwave power transistor |
| 文件： | 总12页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
LLE18040X
NPN microwave power transistor
1999 Apr 22
Product specification
Supersedes data of September 1994
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
FEATURES
QUICK REFERENCE DATA
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
MODE OF
OPERATION (GHz)
f
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(Ω)
Class AB (CW) 1.85
24
0.04 ≥4
≥8.5
typ. 48 see Figs
8 and 9
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
PINNING - SOT437A
PIN
DESCRIPTION
1
2
3
collector
base
• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
emitter connected to flange
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.7 GHz and 2 GHz.
handbook, 4 columns
1
c
b
3
DESCRIPTION
e
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
2
MAM112
Top view
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN. MAX. UNIT
VCBO
VCER
VCEO
VEBO
IC
−
45
30
15
3
V
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
input power
RBE = 220 Ω
open base
−
V
−
V
open collector
−
V
−
0.5
1
A
Pi
f = 1.85 GHz; VCE = 24 V; class AB
−
W
W
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
soldering temperature
Tmb = 75 °C
−
11
−65
−
+150 °C
200
235
°C
°C
Tsld
t ≤ 10 s; 1
−
Note
1. Up to 0.2 mm from ceramic.
MBD745
MBD744
15
1
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
C
(A)
10
Ι
ΙΙ
1
10
5
2
0
10
2
0
50
100
150
200
o
( C)
1
10
V
(V)
10
CE
T
mb
Tmb ≤ 75 °C.
(I) Region of permissible DC operation.
(II) Permissible extension provided RBE ≤ 220 Ω.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
CONDITIONS
MAX.
8.5
UNIT
K/W
thermal resistance from junction to mounting base Tj = 100 °C
thermal resistance from mounting base to heatsink
0.2
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
collector-emitter breakdown voltage IC = 1 mA; RBE = 220 Ω
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 20 V
−
75
−
µA
V
V(BR)CER
V(BR)CBO
V(BR)EBO
hFE
30
45
3
collector-base breakdown voltage
emitter-base breakdown voltage
DC current gain
IC = 1 mA
−
V
IE = 1 mA
−
V
IC = 0.25 A; VCE = 5 V
15
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.
MODE OF
OPERATION
f
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(Ω)
(GHz)
Class AB (CW) 1.85
24
0.04
≥4
typ. 5.5
≥8.5
typ. 9.5
typ. 48
see Figs 8
and 9
1999 Apr 22
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
30
30
5.0 4.0 3.0 3.3
8.9
5.0
19.2
1.1
5.0
2.5
40
40
7.0
12.0
1.1
2.0
MBD756
V
V
CC
BB
C5
F1
C6
L2
output
input
L1
C1
C4
C2
C3
MBD757
The test circuit is split into two independent halves, each being 30 x 40 mm in size.
Dimensions in mm.
Substrate: Teflon fibreglass.
Thickness: 0.4 mm.
Permittivity: εr = 2.55.
Fig.4 Prematching test circuit board.
5
1999 Apr 22
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
BIAS CIRCUIT
PREMATCHING TEST
CIRCUIT
V
CC
R1
C6
TR1
C5
F1
R2
P1
L2
R3
C7
D1
D2
L1
DUT
MEA600
Fig.5 Class AB bias circuit.
List of components (see Figs 4 and 5).
COMPONENT
DESCRIPTION
VALUE
ORDERING INFORMATION
TR1
C1, C4
C2, C3
C5, C6
C7
transistor, BDT239 or equivalent
DC blocking chip capacitor
trimmer capacitor
100 pF
ATC 100A101kp
Tekelec 727-1 SL
Erie 1250-003
0.5 to 5.0 pF
1500 pF
feedthrough bypass capacitor
electrolytic capacitor
10 µF, >30 V
D1
diode BY239 or equivalent; 1
diode BY239 or equivalent; 2
D2
L1
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
L2
3 turns 0.5 mm copper wire;
internal diameter = 2 mm
P1
R1
R2
R3
F1
linear potentiometer
resistor
4.7 kΩ
100 Ω, 0.25 W
1.5 kΩ, 0.25 W
56 Ω, 0.25 W
resistor
resistor
ferrite bead
Philips tube, 12NC = 4330 030 43081
4.2 x 2.2 x 3.2 mm (4B1)
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
1999 Apr 22
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
MBD753
MBD752
15
6
handbook, halfpage
handbook, halfpage
d
im
(dBc)
P
L
(W)
20
25
30
I
=
CQ
3 mA
4
I
=
CQ
40 mA
10 mA
3 mA
2
0
35
40
10 mA
40 mA
45
0
0.2
0.4
0.6
0.8
1
0
1
2
3
P
4
(W)
P
(W)
i
o (av)
VCE = 24 V; f1 = 1850 MHz; f2 = 1850.2 MHz.
VCE = 24 V; f = 1850 MHz.
Fig.7 Intermodulation distortion as a function
of average output power.
Fig.6 Load power as a function of input power.
Input and optimum load impedances.
VCE = 24 V; ICQ = 40 mA (see Figs 8 and 9); typical values at PL = PL1.
f
Zi
ZL
(GHz)
(Ω)
(Ω)
1.70
13.0 + j17.5
15.5 + j17.8
18.6 + j17.6
22.1 + j16.5
25.7 + j14.0
28.5 + j10.0
29.8 + j4.9
5.2 + j6.4
5.0 + j6.0
4.8 + j5.5
4.7 + j5.1
4.5 + j4.6
4.4 + j4.2
4.3 + j3.8
1.75
1.80
1.85
1.90
1.95
2.00
1999 Apr 22
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
1
0.5
2
Z
i
0.2
5
1.7 GHz
1.85 GHz
2 GHz
10
+ j
0.2
0.5
2
5
10
0
∞
– j
10
5
0.2
2
0.5
MBD755
1
VCE = 24 V; Zo = 50 Ω; ICQ = 40 mA.
Fig.8 Input impedance as a function of frequency; typical values at PL = PL1.
1
0.5
2
1.7 GHz
Z
L
1.85 GHz
2 GHz
0.2
5
10
+ j
– j
0.2
0.5
2
5
10
0
∞
10
5
0.2
2
0.5
MBD754
1
VCE = 24 V; Zo = 10 Ω; ICQ = 40 mA.
Fig.9 Optimum load impedance as a function of frequency; typical values at PL = PL1.
8
1999 Apr 22
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 2 leads
SOT437A
D
A
F
B
3
D
1
U
1
q
C
c
1
H
U
E
2
E
M
1
A
w
p
M
M
B
A
1
2
w
M
M
C
b
2
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
p
Q
q
U
U
w
1
w
2
1
1
1
2
3.43
3.18
2.29
2.03
19.02 6.48
18.77 6.22
4.98 1.66 0.13
4.32 1.40 0.08
6.48
6.22
6.48
6.22
6.48
6.22
6.48 1.65 17.02
6.22 1.40 16.00
0.25 0.51
14.22
0.560
0.196 0.065 0.005 0.255 0.255 0.255 0.255 0.065 0.67 0.135 0.90
0.170 0.055 0.003 0.245 0.245 0.245 0.245 0.055 0.63 0.125 0.80
0.749 0.255
0.739 0.245
inches
0.010 0.020
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT437A
99-03-29
1999 Apr 22
9
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 22
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18040X
NOTES
1999 Apr 22
11
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© Philips Electronics N.V. 1999
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/00/02/pp12
Date of release: 1999 Apr 22
Document order number: 9397 750 05719
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