LLE18100X [NXP]
NPN silicon planar epitaxial microwave power transistor; NPN硅平面外延微波功率晶体管
| 型号： | LLE18100X |
| 厂家： | 
NXP |
| 描述： | NPN silicon planar epitaxial microwave power transistor |
| 文件： | 总9页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
LLE18100X
NPN silicon planar epitaxial
microwave power transistor
November 1994
Product specification
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
FEATURES
DESCRIPTION
APPLICATIONS
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
Intended for use in common emitter,
class AB power amplifiers in CW
conditions for professional
applications at 1.85 GHz.
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
MODE OF
OPERATION
f
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ZI/ZL
(Ω)
(GHz)
• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
class AB (CW)
1.85
24
0.1
≥ 9
≥ 8
see Figs 8
and 9
PIN CONFIGURATION
PINNING - SOT437A
PIN
DESCRIPTION
collector
1
2
3
page
1
base
c
emitter connected to flange
handbook, halfpage
b
3
e
MBB012
2
MBC045
Top view
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
November 1994
2
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
45
UNIT
−
−
−
−
−
−
V
VCER
VCEO
VEBO
IC
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
RBE = 220 Ω
open base
30
15
3
V
V
open collector
V
2
A
Ptot
Tstg
Tj
total power dissipation
storage temperature range
junction temperature
soldering temperature
Tmb = 75 °C
23
150
200
235
W
°C
°C
°C
−65
−
Tsld
t ≤ 10 s
−
note 1
Note
1. Up to 0.2 mm from ceramic.
MRA545
MRA544
10
30
handbook, halfpage
handbook, halfpage
P
tot
(W)
25
I
C
(A)
1
20
15
10
5
(1)
−1
10
−2
10
0
2
1
10
10
0
50
100
150
200
250
V
(V)
CE
o
T
( C)
mb
Tmb ≤ 75 °C
Ptot max = 23 W.
(1) Region of permissible DC operation
Fig.3 Maximum power dissipation derating as a
function of mounting base temperature.
Fig.2 DC SOAR.
November 1994
3
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
CONDITIONS
Tj = 100 °C
MAX.
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
4.2 K/W
0.2 K/W
Rth mb-h
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VCB = 20 V;
MIN.
MAX.
UNIT
mA
ICBO
ICER
ICEO
IEBO
hFE
collector cut-off current
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
−
−
−
−
1
IE = 0
VCE = 30 V;
RBE = 220 Ω
10
mA
mA
µA
VCE = 20 V;
IB = 0
10
VEB = 1.5 V;
IC = 0
100
100
VCE = 3 V;
IC = 1 A
15
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier (note 1).
f
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
Zi/ZL
(Ω)
MODE OF OPERATION
(GHz)
class AB (CW)
1.85
24
0.1
≥ 9;
typ. 11
≥ 8;
typ. 10
see Figs 8 and 9
Note
1. The test circuit is split into 2 independant halves each being 30 × 40 mm in size.
November 1994
4
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
30 mm
30 mm
3.2 2.3
1
1
3.5 3.4 2
5
6
0.7
1
6
6.5
11
1
9.1
3
3
3
2
0.7
0.7
0.7
40 mm
input
40 mm
output
11.5
0.635
0.635
3.2
4.9
5.5
2
10
MCD660
Dimensions in mm
Substrate : Epsilam 10
Thickness : 0.635 mm
Permittivity : εr = 10
Fig.4 Prematching test circuit board.
List of components (see bias circuit)
COMPONENT
DESCRIPTION
VALUE
CATALOGUE NO.
TR1
D1
transistor, BDT85 (or equivalent)
diode, BY239800 (or equivalent)
note 1
D2
diode, BY239800
note 2
R1
resistor
100 Ω
R2
resistor
3.3 kΩ
R3
resistor
56 Ω
P1
potentiometer, 10 turns (sfernice)
electrolytic capacitor
feedthrough bypass capacitor
5 turns 0.5 mm copper wire with ferrite bead
5 turns 0.5 mm copper wire
4.7 kΩ
C1
10 µF, 40 V
1500 pF
C5, C6
L1
Erie, ref. 1250-003
L2
Notes
1. In thermal contact with TR1.
2. In thermal contact with D.U.T.
November 1994
5
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
BIAS CIRCUIT
PREMATCHINGTEST CIRCUIT
+V
CC
R1
C6
TR1
C5
R2
P1
L2
L1
R3
D1
D2
D.U.T.
C1
0 V
MBC421 - 1
Fig.5 Class AB bias circuit at 1.85 GHz.
MRA543
MRA542
−15
im
15
handbook, halfpage
handbook, halfpage
d
(dBc)
P
L
(W)
I
= 100 mA
10 mA
3 mA
−20
−25
−30
−35
−40
−45
CQ
I
= 3 mA
CQ
10
30 mA
5
100 mA
0
0
0
2
4
6
8
0.4
0.8
1.2
1.6
P
(W)
P
(W)
OUT
IN
VCE = 24 V
VCE = 24 V
f = 1.85 GHz
f = 1.85 GHz
Fig.6 Load power as a function of input power.
Fig.7 Intermodulation distortion as a function of
average output power.
November 1994
6
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
1
0.5
2
0.2
5
1.65
1
Z
10
i
1.75
+ j
– j
0.2
0.5
2
5
10
0
∞
1.85 GHz
10
5
0.2
2
0.5
MGA247
1
VCE = 24 V;
Zo = 10 Ω;
ICQ = 0.1 A.
Fig.8 Input impedance as a function of frequency; typical values.
1
0.5
2
0.2
5
10
Z
1.65
1.75
L
+ j
– j
0.2
0.5
1
2
5
10
0
∞
1.85 GHz
10
5
0.2
2
0.5
MGA248
1
VCE = 24 V;
Zo = 10 Ω;
ICQ = 0.1 A.
Fig.9 Optimum load impedance as a function of frequency; typical values.
November 1994
7
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 2 leads
SOT437A
D
A
F
3
U
1
B
q
c
C
1
H
U
E
2
w
p
M
A
A
B
1
2
w
M
C
b
2
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
E
F
H
p
Q
q
U
U
w
w
1
2
1
2
5.03
4.31
3.43 2.29
3.17 2.03
19.03 6.48
18.77 6.22
1.66 0.13
1.39 0.07
6.99
6.22
6.99 1.66 17.02
6.22 1.39 16.00
mm
0.51
1.02
14.22
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT437A
97-05-23
November 1994
8
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave
power transistor
LLE18100X
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1994
9
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