MCM6926AWJ8 [NXP]

IC,SRAM,128KX8,BICMOS-TTL,SOJ,32PIN,PLASTIC;
MCM6926AWJ8
型号: MCM6926AWJ8
厂家: NXP    NXP
描述:

IC,SRAM,128KX8,BICMOS-TTL,SOJ,32PIN,PLASTIC

信息通信管理 静态存储器 光电二极管 内存集成电路
文件: 总8页 (文件大小:252K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Freescale Semiconductor, Inc.  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MCM6926A/D  
MCM6926A  
Advance Information  
128K x 8 Bit Fast Static Random  
Access Memory  
The MCM6926A is a 1,048,576 bit static random access memory organized  
as 131,072 words of 8 bits. Static design eliminates the need for external clocks  
or timing strobes.  
WJ PACKAGE  
400 MIL SOJ  
CASE 857A–02  
Output enable (G) is a special control feature that provides increased system  
flexibility and eliminates bus contention problems.  
This device meets JEDEC standards for functionality and revolutionary pinout,  
and is available in a 400 mil plastic small–outline J–leaded package.  
PIN ASSIGNMENT  
A
A
1
2
32  
31  
A
A
Single 3.3 V Power Supply  
Fully Static — No Clock or Timing Strobes Necessary  
All Inputs and Outputs Are TTL Compatible  
Three State Outputs  
Fast Access Times: 8, 10, 12, 15 ns  
Center Power and I/O Pins for Reduced Noise  
Fully 3.3 V BiCMOS  
A
A
3
4
30  
29  
A
A
E
5
6
28  
G
DQ  
27 DQ  
26 DQ  
DQ  
7
8
V
25  
24  
V
SS  
DD  
BLOCK DIAGRAM  
V
V
DD  
9
SS  
DQ  
10  
23 DQ  
22 DQ  
A
A
A
V
V
DD  
SS  
DQ  
W
11  
12  
21  
20  
19  
18  
A
A
A
A
A
A
A
13  
14  
15  
A
MEMORY  
ROW  
DECODER  
MATRIX  
512 ROWS x 256 x 8  
COLUMNS  
A
A
A
A
A
A
16  
17  
A
PIN NAMES  
DQ  
COLUMN I/O  
A . . . . . . . . . . . . . . . . . . . . . . . Address Input  
E . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable  
W . . . . . . . . . . . . . . . . . . . . . . . Write Enable  
G . . . . . . . . . . . . . . . . . . . . . . Output Enable  
DQ . . . . . . . . . . . . . . . . . . Data Input/Output  
INPUT  
DATA  
CONTROL  
COLUMN DECODER  
DQ  
A
A
A
A
A
A
A
A
V
DD  
V
SS  
. . . . . . . . . . . . . + 3.3 V Power Supply  
. . . . . . . . . . . . . . . . . . . . . . . . . . Ground  
E
W
G
This document contains information on a new product. Motorola reserves the right to change or discontinue this product without notice.  
REV 2  
8/14/98  
Motorola, Inc. 1998  
For More Information On This Product,  
Go to: www.freescale.com  
Freescale Semiconductor, Inc.  
TRUTH TABLE (X = Don’t Care)  
E
H
L
G
X
H
L
W
X
H
H
L
Mode  
Not Selected  
Output Disabled  
Read  
V
Current  
Output  
High–Z  
High–Z  
Cycle  
DD  
I
, I  
SB1 SB2  
I
I
I
DDA  
DDA  
DDA  
L
D
Read Cycle  
Write Cycle  
out  
L
X
Write  
High–Z  
ABSOLUTE MAXIMUM RATINGS (See Note)  
This device contains circuitry to protect the  
inputs against damage due to high static volt-  
ages or electric fields; however, it is advised  
that normal precautions be taken to avoid  
application of any voltage higher than maxi-  
mum rated voltages to these high–impedance  
circuits.  
This BiCMOS memory circuit has been de-  
signed to meet the dc and ac specifications  
shown in the tables, after thermal equilibrium  
has been established. The circuit is in a test  
socket or mounted on a printed circuit board  
andtransverse air flow of at least500linearfeet  
per minute is maintained.  
Rating  
Symbol  
Value  
– 0.5 to + 4.6  
– 0.5 to V + 0.5  
Unit  
Power Supply Voltage  
V
DD  
V
V
Voltage Relative to V  
for Any Pin  
V , V  
in out  
SS  
DD  
Except V  
DD  
Output Current  
I
± 30  
mA  
W
out  
Power Dissipation  
P
D
0.6  
Temperature Under Bias  
Operating Temperature  
T
bias  
– 10 to + 85  
0 to + 70  
°C  
°C  
°C  
T
A
Storage Temperature — Plastic  
T
stg  
– 55 to + 125  
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are  
exceeded. Functional operation should be restricted to RECOMMENDED OPER-  
ATING CONDITIONS. Exposure to higher than recommended voltages for  
extended periods of time could affect device reliability.  
DC OPERATING CONDITIONS AND CHARACTERISTICS  
(V  
= 3.3 V + 10%, – 5%, T = 0 to 70°C, Unless Otherwise Noted)  
DD  
A
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
Min  
3.135  
2.2  
Typ  
3.3  
Max  
Unit  
V
Supply Voltage (Operating Voltage Range)  
Input High Voltage  
V
DD  
3.6  
V
IH  
V
V
+ 0.3**  
DD  
Input Low Voltage  
V
IL  
0.8  
V
– 0.5*  
*V (min) = – 0.5 V dc; V (min) = – 2.0 V ac (pulse width 2.0 ns) for I 20.0 mA.  
IL  
**V (max) = V  
IL  
+ 0.3 V dc; V (max) = V + 2 V ac (pulse width 2.0 ns) for I 20.0 mA.  
DD  
IH  
DD  
IH  
DC CHARACTERISTICS  
Parameter  
Symbol  
Min  
Max  
± 1.0  
± 1.0  
0.4  
Unit  
µA  
µA  
V
Input Leakage Current (All Inputs, V = 0 to V  
)
I
lkg(I)  
in  
DD  
Output Leakage Current (E = V , V  
= 0 to V  
)
I
lkg(O)  
IH out  
DD  
Output Low Voltage (I  
= + 8.0 mA)  
V
OL  
OL  
Output High Voltage (I  
= – 4.0 mA)  
V
OH  
2.4  
V
OH  
MCM6926A  
2
MOTOROLA FAST SRAM  
For More Information On This Product,  
Go to: www.freescale.com  
Freescale Semiconductor, Inc.  
POWER SUPPLY CURRENTS (See Note 1)  
6926A–8  
6926A–10  
6926A–12  
6926A–15  
Parameter  
Symbol  
Unit  
Notes  
Typ  
Max  
Typ  
Max  
Typ  
Max  
Typ  
Max  
AC Active Supply Current  
I
100  
100  
100  
100  
mA  
2, 3, 4  
DDA  
(I  
out  
= 0 mA) (V  
= max, f = f  
)
max  
DD  
Active Quiescent Current  
(E = V , V = max, f = 0 MHz)  
I
80  
50  
20  
80  
80  
80  
mA  
mA  
mA  
DD2  
IL DD  
AC Standby Current  
(E = V , V = max, f = f  
I
45  
40  
35  
2, 3, 4  
SB1  
SB2  
)
max  
IH DD  
CMOS Standby Current  
(V = max, f = 0 MHz,  
I
20  
20  
20  
DD  
E V  
V
– 0.2 V,  
DD  
V  
+ 0.2 V, or V – 0.2 V)  
DD  
in  
NOTES:  
1. Typical current = 25°C @ 3.3 V.  
2. Reference AC Operating Conditions and Characteristics for input and timing (V /V , t /t , pulse level 0 to 3.0 V, V = 3.0 V).  
SS  
IH IL r f IH  
3. All address transition simultaneously low (LSB) and then high (MSB).  
4. Data states are all zero.  
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T = 25°C, Periodically Sampled Rather Than 100% Tested)  
A
Parameter  
Symbol  
Typ  
Max  
Unit  
pF  
Address Input Capacitance  
Control Pin Input Capacitance  
Input/Output Capacitance  
C
C
6
6
8
in  
in  
pF  
C
pF  
I/O  
MCM6926A  
3
MOTOROLA FAST SRAM  
For More Information On This Product,  
Go to: www.freescale.com  
Freescale Semiconductor, Inc.  
AC OPERATING CONDITIONS AND CHARACTERISTICS  
(V  
= 3.3 V + 10%, – 5%, T = 0 to +70°C, Unless Otherwise Noted)  
DD  
A
Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V  
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V  
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ns  
Output Timing Measurement Reference Level . . . . . . . . . . . . . 1.5 V  
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1  
READ CYCLE TIMING (See Notes 1 and 2)  
6926A–8  
6926A–10  
6926A–12  
6926A–15  
Parameter  
Read Cycle Time  
Symbol  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Notes  
Min  
8
Max  
8
Min  
10  
3
Max  
Min  
12  
3
Max  
Min  
15  
3
Max  
t
10  
10  
5
12  
12  
6
15  
15  
7
3
AVAV  
Address Access Time  
t
3
AVQV  
Enable Access Time  
t
8
ELQV  
GLQV  
AXQX  
Output Enable Access Time  
Output Hold from Address Change  
Enable Low to Output Active  
Output Enable Low to Output Active  
Enable High to Output High–Z  
Output Enable High to Output High–Z  
t
t
4
4
5
6
7
t
3
3
3
3
4, 5, 6  
4, 5, 6  
4, 5, 6  
4, 5, 6  
ELQX  
GLQX  
EHQZ  
GHQZ  
t
t
0
0
0
0
t
4
5
6
7
NOTES:  
1. W is high for read cycle.  
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.  
3. All read cycle timings are referenced from the last valid address to the first transitioning address.  
4. At any given voltage and temperature, t  
to device.  
max < t  
min, and t  
max < t min, both for a given device and from device  
EHQZ  
ELQX  
GHQZ  
GLQX  
5. Transition is measured 200 mV from steady–state voltage.  
6. This parameter is sampled and not 100% tested.  
7. Device is continuously selected (E = V , G = V ).  
IL IL  
8. Addresses valid prior to or coincident with E going low.  
TIMING LIMITS  
The table of timing values shows either a minimum  
or a maximum limit for each parameter. Input require-  
ments are specified from the external system point of  
view. Thus, address setup time is shown as a mini-  
mum since the system must supply at least that much  
time. On the other hand, responses from the memory  
are specified from the device point of view. Thus, the  
access time is shown as a maximum since the device  
never provides data later than that time.  
R
= 50 Ω  
L
OUTPUT  
Z
= 50 Ω  
0
V
= 1.5 V  
L
Figure 1. AC Test Load  
MCM6926A  
4
MOTOROLA FAST SRAM  
For More Information On This Product,  
Go to: www.freescale.com  
Freescale Semiconductor, Inc.  
READ CYCLE 1 (See Note 7)  
t
AVAV  
A (ADDRESS)  
Q (DATA OUT)  
t
AXQX  
PREVIOUS DATA VALID  
DATA VALID  
t
AVQV  
READ CYCLE 2 (See Note 8)  
t
AVAV  
A (ADDRESS)  
t
AVQV  
t
ELQV  
E (CHIP ENABLE)  
t
EHQZ  
t
ELQX  
G (OUTPUT ENABLE)  
t
GHQZ  
t
GLQV  
t
GLQX  
Q (DATA OUT)  
DATA VALID  
MCM6926A  
5
MOTOROLA FAST SRAM  
For More Information On This Product,  
Go to: www.freescale.com  
Freescale Semiconductor, Inc.  
WRITE CYCLE 1 (W Controlled, See Notes 1 and 2)  
6926A–8  
Min Max  
6926A–10  
6926A–12  
6926A–15  
Parameter  
Write Cycle Time  
Symbol  
Unit  
ns  
Notes  
Min  
10  
0
Max  
Min  
12  
0
Max  
Min  
15  
0
Max  
t
8
0
8
7
8
3
AVAV  
Address Setup Time  
t
ns  
AVWL  
Address Valid to End of Write  
Address Valid to End of Write, G High  
Write Pulse Width  
t
9
10  
9
12  
10  
12  
ns  
AVWH  
AVWH  
t
8
ns  
t
t
,
9
10  
ns  
WLWH  
WLEH  
Write Pulse Width, G High  
t
t
,
7
8
9
10  
ns  
WLWH  
WLEH  
Data Valid to End of Write  
Data Hold Time  
t
t
4
0
5
0
6
0
7
0
ns  
ns  
ns  
ns  
ns  
DVWH  
WHDX  
Write Low to Data High–Z  
Write High to Output Active  
Write Recovery Time  
NOTES:  
t
3
3.5  
3
3.5  
3
3.5  
3
3.5  
4, 5, 6  
4, 5, 6  
WLQZ  
t
WHQX  
t
0
0
0
0
WHAX  
1. A write occurs during the overlap of E low and W low.  
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.  
3. All write cycle timings are referenced from the last valid address to the first transitioning address.  
4. Transition is measured 200 mV from steady–state voltage.  
5. This parameter is sampled and not 100% tested.  
6. At any given voltage and temperature, t  
max < t  
min both for a given device and from device to device.  
WHQX  
WLQZ  
WRITE CYCLE 1  
t
AVAV  
A (ADDRESS)  
t
t
WHAX  
AVWH  
E (CHIP ENABLE)  
t
WLEH  
t
WLWH  
W (WRITE ENABLE)  
D (DATA IN)  
t
t
AVWL  
t
WHDX  
DVWH  
DATA VALID  
HIGH–Z  
t
WLQZ  
HIGH–Z  
Q (DATA OUT)  
t
WHQX  
MCM6926A  
6
MOTOROLA FAST SRAM  
For More Information On This Product,  
Go to: www.freescale.com  
Freescale Semiconductor, Inc.  
WRITE CYCLE 2 (E Controlled, See Notes 1 and 2)  
6926A–8  
Min Max  
6926A–10  
6926A–12  
6926A–15  
Parameter  
Write Cycle Time  
Symbol  
Unit  
ns  
Notes  
Min  
10  
0
Max  
Min  
12  
0
Max  
Min  
15  
0
Max  
t
8
0
7
7
3
AVAV  
Address Setup Time  
t
ns  
AVEL  
Address Valid to End of Write  
Enable to End of Write  
t
8
9
10  
10  
ns  
AVEH  
t
t
,
8
9
ns  
4,5  
ELEH  
ELWH  
Data Valid to End of Write  
Data Hold Time  
t
t
4
0
0
5
0
0
6
0
0
7
0
0
ns  
ns  
ns  
DVEH  
EHDX  
Write Recovery Time  
NOTES:  
t
EHAX  
1. A write occurs during the overlap of E low and W low.  
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.  
3. All write cycle timings are referenced from the last valid address to the first transitioning address.  
4. If E goes low coincident with or after W goes low, the output will remain in a high impedance condition.  
5. If E goes high coincident with or before W goes high, the output will remain in a high impedance condition.  
WRITE CYCLE 2  
t
AVAV  
A (ADDRESS)  
t
AVEH  
t
ELEH  
E (CHIP ENABLE)  
t
t
t
EHAX  
AVEL  
ELWH  
W (WRITE ENABLE)  
t
t
EHDX  
DVEH  
D (DATA IN)  
DATA VALID  
HIGH–Z  
Q (DATA OUT)  
ORDERING INFORMATION  
(Order by Full Part Number)  
MCM 6926A WJ XX  
X
Motorola Memory Prefix  
Part Number  
Shipping Method (R = Tape and Reel, Blank = Rails)  
Speed (8 = 8 ns, 10 = 10 ns, 12 = 12 ns, 15 = 15 ns)  
Package (WJ = 400 mil SOJ)  
Full Part Numbers — MCM6926AWJ8  
MCM6926AWJ8R  
MCM6926AWJ10  
MCM6926AWJ10R  
MCM6926AWJ12  
MCM6926AWJ12R  
MCM6926AWJ15  
MCM6926AWJ15R  
MCM6926A  
7
MOTOROLA FAST SRAM  
For More Information On This Product,  
Go to: www.freescale.com  
Freescale Semiconductor, Inc.  
PACKAGE DIMENSIONS  
32–LEAD  
400 MIL SOJ  
CASE 857A–02  
F 32 PL  
NOTES:  
32  
1
17  
16  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
S
S
S
0.17 (0.007)  
T
B
A
2. CONTROLLING DIMENSION: INCH.  
3. TO BE DETERMINED AT PLANE –T–.  
4. DIMENSION A AND D DO NOT INCLUDE MOLD  
PROTRUSION. MOLD PROTRUSION SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
N
D 32 PL  
5. DIMENSION A AND B INCLUDE MOLD MISMATCH  
AND ARE DETERMINED AT THE PARTING LINE.  
S
S
S
NOTE 3  
0.17 (0.007)  
T
B
A
DETAIL Z  
INCHES  
MILLIMETERS  
DIM  
A
B
C
D
E
MIN  
MAX  
0.830  
0.405  
0.148  
0.020  
0.098  
0.032  
MIN  
20.83  
10.03  
3.26  
0.41  
2.24  
0.67  
1.27 BSC  
0.89  
0.64 BSC  
MAX  
21.08  
10.29  
3.75  
0.50  
2.48  
0.820  
0.395  
0.128  
0.016  
0.088  
0.026  
0.050 BSC  
0.035  
0.025 BSC  
0.030  
0.435  
0.365  
0.030  
P
–A–  
S
S
S
0.17 (0.007)  
T
A
B
L
–B–  
G
F
0.81  
G
K
L
N
P
0.045  
1.14  
C
E
0.045  
0.445  
0.375  
0.040  
0.76  
11.05  
9.27  
1.14  
11.30  
9.52  
0.10 (0.040)  
K
–T–  
R
S
SEATING PLANE  
R
DETAIL Z  
S
RADIUS  
0.77  
1.01  
S
S
S
0.25 (0.010)  
T
A
B
NOTE 3  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola  
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,includingTypicals”  
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of  
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury  
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
Motorola was negligent regarding the design or manufacture of the part. Motorola and  
Opportunity/Affirmative Action Employer.  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal  
Mfax is a trademark of Motorola, Inc.  
How to reach us:  
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CUSTOMER FOCUS CENTER: 1-800-521-6274  
MCM6926A/D  
For More Information On This Product,  
Go to: www.freescale.com  

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SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

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SI9130_11

Pin-Programmable Dual Controller - Portable PCs

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SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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