MHT2000GNR1 [NXP]
RF LDMOS Integrated Power Amplifiers;
| 型号： | MHT2000GNR1 |
| 厂家： | 
NXP |
| 描述： | RF LDMOS Integrated Power Amplifiers |
| 文件： | 总21页 (文件大小：1070K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MHT2000N
Rev. 0, 5/2014
Freescale Semiconductor
Technical Data
RF LDMOS Integrated Power Amplifiers
Wideband integrated circuit is suitable for industrial heating applications
operating at 2450 MHz. This multi--stage structure is rated for 26 to 32 V
operation in both CW and pulse applications.
MHT2000NR1
MHT2000GNR1
Typical CW Performance: VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA,
Pout = 25 W CW, f = 2450 MHz
Power Gain — 27.7 dB
Power Added Efficiency — 43.8%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 W CW Output
Power
2450 MHz, 25 W CW, 28 V
INDUSTRIAL HEATING, RUGGED
RF LDMOS INTEGRATED
POWER AMPLIFIERS
Features
Multi--stage structure is rated for 26 to 32 V Operation
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
Excellent Thermal Stability
225C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
TO--270WB--16
PLASTIC
MHT2000NR1
TO--270WBG--16
PLASTIC
MHT2000GNR1
GND
DS1
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
V
V
DS1
RF
RF /V
out DS2
in
RF
6
14
RF /V
out DS2
in
7
8
NC
GS1
GS2
DS1
GND
V
V
V
GS1
GS2
Quiescent Current
Temperature Compensation
V
9
(1)
10
11
13
12
NC
GND
V
V
DS1
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.
Freescale Semiconductor, Inc., 2014. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +65
–0.5, +10
32, +0
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
V
DS
V
GS
V
DD
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
T
stg
–65 to +150
150
T
C
C
(1,2)
T
225
C
J
P
20
dBm
in
Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture)
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
(Case Temperature 80C, P = 25 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 55 mA
= 195 mA
6.1
1.2
out
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
1B
A
II
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 1 -- On Characteristics
Gate Threshold Voltage
V
V
1.2
—
1.9
2.7
2.7
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V = 10 Vdc, I = 20 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 55 mA)
(4)
DS
DQ1
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 55 mAdc)
V
10.3
11.2
12.6
(4,5)
DD
DQ1
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Measured in Freescale Narrowband Test Fixture.
5. See Appendix A for functional test measurements and test fixture.
(continued)
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
C
Characteristic
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 2 -- On Characteristics
Gate Threshold Voltage
V
V
1.2
—
1.9
2.7
2.7
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V = 10 Vdc, I = 80 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 195 mAdc)
(1)
DS
DQ2
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 195 mAdc)
V
9.5
0.15
10.5
0.47
11.5
0.8
(1,2)
DD
DQ2
Drain--Source On--Voltage
(V = 10 Vdc, I = 800 mAdc)
V
GS
D
(3)
Stage 2 -- Dynamic Characteristics
Output Capacitance
C
oss
—
111
—
pF
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(4)
(1)
Narrowband Performance Specifications
(In Freescale Narrowband Test Fixture, 50 ohm system) V = 28 Vdc, I
= 55 mA,
DQ1
DD
I
= 195 mA, P = 25 W CW, f = 2450 MHz
DQ2
out
Power Gain
G
25.5
41.5
—
27.7
43.8
–18
30.5
—
dB
%
ps
Power Added Efficiency
PAE
IRL
Input Return Loss
–10
dB
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 77 mA, I
= 275 mA, P = 4 W Avg., f = 2700 MHz,
DQ2 out
DD
DQ1
3
WiMAX, OFDM 802.16d, 64 QAM / , 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
4
measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain
G
25.5
15
—
28.5
17
30.5
—
dB
%
ps
Power Added Efficiency
PAE
PAR
ACPR
IRL
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
9
—
dB
dBc
dB
—
–50
–15
–46
–10
—
1. Measured in Freescale Narrowband Test Fixture.
2. See Appendix A for functional test fixture documentation.
3. Part internally matched both on input and output.
4. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
V
V
D2
B1
DD1
28 V
C17
C16
C9
C8
C7
C15
C14
C13
NC
1
2
3
4
5
DUT
16
15
NC
NC
C12
Z11
NC
NC
NC
Z13
Z12 Z14
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5 Z6
Z7
Z8 Z9 Z10
14
6
C11
7
8
9
NC
NC
C4
C10
Quiescent Current
Temperature
Compensation
C5
C6
NC
NC
13
12
10
11
C1
V
G1
C2
C3
R4
R1
R5
R6
V
G2
R2
R3
Z1
0.500 x 0.027 Microstrip
0.075 x 0.127 Microstrip
1.640 x 0.027 Microstrip
0.100 x 0.042 Microstrip
0.151 x 0.268 Microstrip
0.025 x 0.268 x 0.056 Taper
0.100 x 0.056 Microstrip
0.306 x 0.056 Microstrip
Z9
0.040 x 0.061 Microstrip
0.020 x 0.050 Microstrip
0.050 x 0.050 Microstrip
0.050 x 0.027 Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
Z11
Z12
Z13* 0.338 x 0.020 Microstrip
Z14
PCB
1.551 x 0.027 Microstrip
Rogers R04350B, 0.0133, = 3.48
r
* Line length includes microstrip bends
Figure 3. MHT2000NR1 Narrowband Test Circuit Schematic
Table 6. MHT2000NR1 Narrowband Test Circuit Component Designations and Values
Part
Description
47 , 100 MHz Short Ferrite Bead
6.8 pF Chip Capacitors
Part Number
Manufacturer
Fair--Rite
B1
2743019447
C1, C4, C7, C12, C15
C2, C5, C8, C13
C3, C6, C9, C14
C10
ATC600S6R8CT250XT
C0603C103J5RAC
ATC
10 nF Chip Capacitors
Kemet
Murata
ATC
1 F, 50 V Chip Capacitors
2.4 pF Chip Capacitor
GRM32RR71H105KA01B
ATC600S2R4BT250XT
ATC600S3R3BT250XT
GRM55DR61H106KA88B
CRCW12061202FKEA
CRCW12061001FKEA
C11
3.3 pF Chip Capacitor
ATC
C16, C17
10 F, 50 V Chip Capacitors
12 K, 1/4 W Chip Resistors
1 K, 1/4 W Chip Resistors
Murata
Vishay
Vishay
R1, R4
R2, R3, R5, R6
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
B1
C16
C12
C15
C14
C13
C17
C9
C8
C7
C4
C5
R6
C11
C10
C1
C2
R4
R5
V
V
C6
G1
G2
R2
R1
R3
C3
Figure 4. MHT2000NR1 Narrowband Test Circuit Component Layout
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — NARROWBAND
30
29
28
27
26
25
50
49
48
47
46
45
44
Ideal
P3dB = 44.9 dBm (30.9 W)
P1dB = 44.5 dBm (28.05 W)
40
30
20
10
0
Actual
V
I
I
= 28 Vdc
= 55 mA
= 195 mA
DD
DQ1
DQ2
43
42
41
V
= 28 Vdc, I
= 55 mA
= 195 mA, f = 2450 MHz
DD
DQ1
I
DQ2
f = 2450 MHz
1
10
100
13
14
15
16
17
18
19
20
P , INPUT POWER (dBm)
in
P
, OUTPUT POWER (WATTS) CW
out
Figure 5. Power Gain and Power Added Efficiency
versus CW Output Power
Figure 6. CW Output Power versus Input Power
30
50
40
29
V
= 32 V
D1
28
27
26
25
30
20
30 V
28 V
V
= 28 Vdc
= 55 mA
= 195 mA
D2
10
0
I
I
DQ1
DQ2
f = 2450 MHz
0.1
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 7. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD1
30
29
28
27
26
25
50
28 V
40
30 V
32 V
30
20
10
0
V
= 28 V
D2
30 V
32 V
V
= 28 Vdc
= 55 mA
= 195 mA
D1
I
I
DQ1
DQ2
f = 2450 MHz
0.1
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 8. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD2
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS — NARROWBAND
30
29
28
27
26
25
50
I
varied from
DQ1
45 mA to 65 mA
in 5 mA steps
40
I
= 65 mA
DQ1
30
20
10
0
60 mA
55 mA
45 mA
50 mA
V
I
= 28 Vdc
= 195 mA
DD
DQ2
f = 2450 MHz
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 9. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of IDQ1
29
28
27
26
25
50
40
30
20
10
I
= 235 mA
DQ2
215 mA
195 mA
175 mA
155 mA
I
varied from
155 mA to 235 mA
in 20 mA steps
DQ2
V
= 28 Vdc
= 55 mA
DD
I
DQ1
f = 2450 MHz
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of IDQ2
9
10
10
10
8
1st Stage
7
2nd Stage
6
10
10
10
5
4
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 25 W CW, and PAE = 43.8%.
DD
out
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
Z = 50
o
Z
load
Z
source
f = 2450 MHz
f = 2450 MHz
V
= 28 Vdc, I
= 55 mA, I
= 195 mA, P = 25 W CW
out
DD
DQ1
DQ2
f
Z
Z
load
source
MHz
2450
32 – j6.256
6.2 – j1.17
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 12. Series Equivalent Source and Load Impedance — Narrowband
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
8
PACKAGE DIMENSIONS
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
10
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
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MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
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MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
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MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
16
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2014
Initial Release of Data Sheet
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
18
APPENDIX A
MHT2000NR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA
B1
C16
C17
C15
C9
C2
C8
C7
C14
C13
C12
C4
C5
C1
R6
C11
C10
R4
R1
R5
R2
V
V
C6
C3
G1
G2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.500 x 0.027 Microstrip
0.075 x 0.127 Microstrip
1.640 x 0.027 Microstrip
0.100 x 0.042 Microstrip
0.151 x 0.268 Microstrip
0.025 x 0.268 x 0.056 Taper
0.050 x 0.056 Microstrip
0.356 x 0.056 Microstrip
Z9
0.040 x 0.061 Microstrip
0.020 x 0.050 Microstrip
0.050 x 0.050 Microstrip
0.050 x 0.027 Microstrip
Z10
Z11
Z12
Z13* 0.338 x 0.020 Microstrip
Z14
PCB
1.551 x 0.027 Microstrip
Rogers R04350B, 0.0133, = 3.48
r
* Line length includes microstrip bends
Figure A--1. MHT2000NR1 Test Circuit Component Layout
Table A--1. Electrical Characteristics (T = 25C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 77 mA, I
= 275 mA, P = 4 W Avg., f = 2700 MHz,
DD
DQ1
DQ2
out
3
WiMAX, OFDM 802.16d, 64 QAM / , 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
4
measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain
G
25.5
15
—
28.5
17
30.5
—
dB
ps
Power Added Efficiency
PAE
PAR
ACPR
IRL
%
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
9
—
—
–50
–15
–46
–10
dBc
—
dB
(continued)
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
APPENDIX A
MHT2000NR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued)
Table A--1. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 -- On Characteristics
Gate Quiescent Voltage
V
—
2.7
—
Vdc
Vdc
GS(Q)
(V = 28 Vdc, I
DS
= 77 mA)
DQ1
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 77 mAdc, Measured in Functional Test)
V
12.5
15.8
19.5
GG(Q)
DD
DQ1
Stage 2 -- On Characteristics
Gate Quiescent Voltage
V
—
11
2.7
14
—
Vdc
Vdc
GS(Q)
(V = 28 Vdc, I
DS
= 275 mAdc)
DQ2
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 275 mAdc, Measured in Functional Test)
V
18
GG(Q)
DD
DQ2
Table A--2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
(Case Temperature 81C, P = 25 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 77 mA
= 275 mA
5.5
1.3
out
DQ1
DQ2
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
20
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E 2014 Freescale Semiconductor, Inc.
Document Number: MHT2000N
Rev. 0, 5/2014
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