MKW37Z512VFT4_技术文档

NXP Semiconductors

MKW39A512

Data Sheet: Technical Data

Rev. 7, 03/2020

MKW39/38/37 Data Sheet

MKW39A512VFT4

An ultra low-power, highly integrated Bluetooth® Low

Energy 5.0 wireless microcontroller

MKW38A512VFT4

MKW38Z512VFT4

MKW37A512VFT4

MKW37Z512VFT4

48 "Wettable" HVQFN

7x7 mm Pitch 0.5 mm

Multi-Standard Radio

System peripherals

• 2.4 GHz Bluetooth Low Energy (Bluetooth LE) version

5.0 compliant supporting up to 8 simultaneous

hardware connections and all optional features

including:

• Nine MCU low-power modes to provide power

optimization based on application requirements

• DC-DC Converter supporting Buck and Bypass

operating modes

• High speed (2M PHY)

• Long range

• Advertising Extension

• High duty cycle non-connectable advertising

• Channel selection algorithm #2

• Direct Memory Access (DMA) controller

• Computer Operating Properly (COP) watchdog

• Serial Wire Debug (SWD) Interface and Micro Trace

buffer

• Bit Manipulation Engine (BME)

• Typical Bluetooth LE Receiver Sensitivity

• Bluetooth LE 2 Mbit/s: –95.5 dBm

• Bluetooth LE 1 Mbit/s: –98 dBm

• Bluetooth LE LR 500 kbit/s: –101 dBm

• Bluetooth LE LR 125 kbit/s: –105 dBm

• Generic FSK modulation

Timers

• 16-bit Low-power Timer (LPTMR)

• 3 Timer/PWM Modules(TPM): One 4 channel TPM

and two 2 channel TPMs

• Programmable Interrupt Timer (PIT)

• Real-Time Clock (RTC)

• Data Rate: 250, 500, 1000 and 2000 kbit/s

• Modulations: GFSK BT = 0.5, MSK

• Modulation Index: 0.32, 0.5, 0.7, and 1.0

• Typical Receiver Sensitivity (250 kbit/s GFSK-

BT=0.5, h=0.5) = –101 dBm

Communication interfaces

• 2 Serial Peripheral Interface (SPI) modules

• 2 Inter-integrated Circuit (I2C) modules

• Low-power UART (LPUART) module with LIN

support (2x LPUART on KW38)

• Carrier Modulator Timer (CMT)

• FlexCAN module (with CAN FD support up to 3.2

Mbit/s baudrate) on KW38

• Programmable Transmitter Output Power: –30 dBm to

+5 dBm

• Low external component count for low-cost application

• On-chip balun with single ended bidirectional RF port

NXP reserves the right to change the production detail specifications as may be

required to permit improvements in the design of its products.

Analog Modules

Security

• AES-128 Hardware Accelerator (AESA)

• 16-bit Analog-to-Digital Converter (ADC)

• 6-bit High-Speed Analog Comparator (CMP)

• 1.2 V Voltage Reference (VREF)

• True Random Number Generator (TRNG)

• Advanced flash security on Program Flash

• 80-bit unique identification number per chip

• 40-bit unique Media Access Control (MAC) sub-

address

MCU and Memories

• 256 KB program flash memory plus 256 KB FlexNVM

on KW39/38

• LE Secure Connections

• 512 KB program flash memory on KW37

• 8 KB FlexRAM supporting EEPROM emulation on

KW39/38

• 8 KB program acceleration RAM on KW37

• On-chip 64 KB SRAM

Clocks

• 26 and 32 MHz supported for Bluetooth LE and

Generic FSK modes

• 32.768 kHz Crystal Oscillator

• Up to 48 MHz Arm® Cortex®-M0+ core

Operating Characteristics

Low-power Consumption

• Voltage range: 1.71 V to 3.6 V

• Ambient temperature range: –40 to 105 °C

• AEC Q100 Grade 2 Automotive Qualification

• Industrial Qualification

• Transceiver current (DC-DC buck mode, 3.6 V supply)

• Typical Rx current: 6.3 mA

• Typical Tx current: 5.7 mA

• Low-power Mode (VLLS0) Current: 266.6 nA

Human-machine Interface (HMI)

• General-purpose input/output (GPIO)

KW39/38/37 Part Numbers

256 KB P-

512 KB Flash/256 Second LPUART

8 KB

Qualification

Tier

Device

CAN FD

FlexRAM Package

EEPROM

P-Flash

KB

with LIN

FlexNVM

MKW39A512VFT4 Auto AEC-Q100

Grade 2

N

Y

N

Y

N

Y

7X7 mm 48-

pin "Wettable"

HVQFN

MKW38A512VFT4 Auto AEC-Q100

Grade 2

Y

MKW38Z512VFT4

Industrial

Y

N

Y

N

Y

N

Y

N

MKW37A512VFT4 Auto AEC-Q100

Grade 2

MKW37Z512VFT4

Industrial

N

Y

N

Related Resources

Type

Product Selector

Fact Sheet

Description

The Product Selector lets you find the right Kinetis part for your design.

The Fact Sheet gives overview of the product key features and its uses.

Reference Manual The Reference Manual contains a comprehensive description of the structure and function

(operation) of a device.

Data Sheet

Chip Errata

The Data Sheet includes electrical characteristics and signal connections.

The chip mask set Errata provides additional or corrective information for a particular device mask

set.

Package drawing

Package dimensions are available in package drawings.

2

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

3

NXP Semiconductors

Table of Contents

1

2

Introduction........................................................................... 5

6.4.1 Thermal operating requirements....................... 51

6.4.2 Thermal attributes..............................................51

6.5 Peripheral operating requirements and behaviors.........52

6.5.1 Core modules.................................................... 52

6.5.2 System modules................................................53

6.5.3 Clock modules...................................................54

6.5.4 Memories and memory interfaces..................... 57

6.5.5 Security and integrity modules.......................... 61

6.5.6 Analog............................................................... 61

6.5.7 Timers................................................................68

6.5.8 Communication interfaces................................. 68

6.5.9 Human-machine interfaces (HMI)......................73

6.6 DC-DC Converter Operating Requirements.................. 73

6.7 Ratings...........................................................................75

6.7.1 Thermal handling ratings...................................75

6.7.2 Moisture handling ratings.................................. 75

6.7.3 ESD handling ratings.........................................76

6.7.4 Voltage and current operating ratings............... 76

Pin Diagrams and Pin Assignments......................................76

7.1 KW39/37 Signal Multiplexing and Pin Assignments...... 77

7.2 KW38 Signal Multiplexing and Pin Assignments........... 79

7.3 KW39/38/37 Pinouts......................................................82

7.4 Module Signal Description Tables................................. 83

7.4.1 Core Modules.................................................... 83

7.4.2 Radio Modules...................................................84

7.4.3 System Modules................................................85

7.4.4 Clock Modules...................................................85

7.4.5 Analog Modules.................................................86

7.4.6 Timer Modules...................................................87

7.4.7 Communication Interfaces.................................87

7.4.8 Human-Machine Interfaces(HMI)...................... 89

Package Information............................................................. 89

8.1 Obtaining package dimensions......................................89

Part identification...................................................................90

9.1 Description.....................................................................90

9.2 Format........................................................................... 90

9.3 Fields............................................................................. 90

9.4 Example.........................................................................91

Feature Descriptions.............................................................6

2.1 Block Diagram............................................................... 6

2.2 Radio features............................................................... 8

2.3 Microcontroller features................................................. 9

2.4 System features.............................................................10

2.5 Peripheral features........................................................ 12

2.6 Security Features...........................................................17

Transceiver Description........................................................ 18

3.1 Transceiver Functions................................................... 18

3.2 Key Specifications......................................................... 19

3.3 Channel Map Frequency Plans .................................... 19

3.3.1 Channel Plan for Bluetooth Low Energy............19

3.3.2 Other Channel Plans ........................................ 21

Transceiver Electrical Characteristics...................................21

4.1 Radio operating conditions............................................ 21

4.2 Receiver Feature Summary...........................................22

4.3 Transmit and PLL Feature Summary.............................26

System and Power Management..........................................31

5.1 Power Management.......................................................31

5.1.1 DC-DC Converter.............................................. 32

5.2 Modes of Operation....................................................... 32

5.2.1 Power modes.....................................................32

KW39/38/37 Electrical Characteristics..................................35

6.1 AC electrical characteristics...........................................35

6.2 Nonswitching electrical specifications............................35

6.2.1 Voltage and current operating requirements..... 35

6.2.2 LVD and POR operating requirements..............36

6.2.3 Voltage and current operating behaviors...........37

6.2.4 Power mode transition operating behaviors...... 38

6.2.5 Power consumption operating behaviors.......... 39

6.2.6 Diagram: Typical IDD_RUN operating behavior46

6.2.7 SoC Power Consumption.................................. 48

6.2.8 Designing with radiated emissions in mind........49

6.2.9 Capacitance attributes.......................................49

6.3 Switching electrical specifications..................................49

6.3.1 Device clock specifications................................49

6.3.2 General switching specifications....................... 50

6.4 Thermal specifications...................................................51

3

4

5

7

6

8

9

10 Revision History.................................................................... 91

4

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Introduction

1 Introduction

The KW39/38/37 wireless microcontrollers (MCU), which includes the KW39A,

KW38A/Z and KW37A/Z families of devices, are highly integrated single-chip

devices that enable Bluetooth Low Energy 5.0 and Generic FSK connectivity for

automotive, and industrial embedded systems. To meet the stringent requirements of

automotive applications, the KW39/38/37 is fully AEC Q100 Grade 2 Automotive

Qualified. The target applications center on wirelessly bridging the embedded world

with mobile devices to enhance the human interface experience, share embedded data

between devices and the cloud and enable wireless firmware updates. Leading the

automotive applications is the Digital Key, where a smartphone can be used by the

owner as an alternative to the key FOB for unlocking and personalizing the driving

experience. For a car sharing experience, the owner can provide selective, temporary

authorization for access to the car allowing the authorized person to unlock, start, and

operate the car using their mobile device using Bluetooth LE.

The KW39/38/37 Wireless MCU integrates an Arm® Cortex-M0+ CPU with up to

512 KB flash and 64 KB SRAM and a 2.4 GHz radio that supports Bluetooth LE 5.0

and Generic FSK modulations. The Bluetooth LE radio supports up to 8 simultaneous

connections in any master/slave combination.

The KW38 includes an integrated FlexCAN module enabling seamless integration

into a cars in-vehicle or an industrial CAN communication network, enabling

communication with external control and sensor monitoring devices over Bluetooth

LE. The FlexCAN module can support CAN’s flexible data-rate (CAN FD) protocol

for increased bandwidth and lower latency required by many automotive applications.

The KW39/38/37 devices can be used as a "BlackBox" modem to add Bluetooth LE

or Generic FSK connectivity to an existing host MCU or MPU (microprocessor). The

devices may also be used as a standalone smart wireless sensor with embedded

application where no host controller is required.

The RF circuit of the KW39/38/37 is optimized to require very few external

components, achieving the smallest RF footprint possible on a printed circuit board.

Extremely long battery life is achieved through the efficiency of code execution in the

Cortex-M0+ CPU core and the multiple low-power operating modes of the

KW39/38/37. For power critical applications, an integrated DC-DC converter enables

operation from a single coin cell or Li-ion battery with a significant reduction of peak

receive and transmit current consumption.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

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NXP Semiconductors

Feature Descriptions

2 Feature Descriptions

This section provides a simplified block diagram and highlights the KW39/38/37

features.

2.1 Block Diagram

32K Osc

32M Osc

IRC

MCG

Arm Cortex M0+ Core

4 MHz

DMA MUX

4ch DMA

IRC

32 kHz

Serial Wire Debug

DAP MDM

NVIC

WIC

FLL

DWT

MTB

IOPORT

Unified Bus

Data stream

AHBLite

M2A

M3

M0

Crossbar-Lite Switch (AXBS)

S3

S2

S0

S1

SIM

ADC

PIT

I2C x2

GPIO

Flash

Controller

64 KByte

SRAM

SMC

RCM

PMC

CMP

TPM x3

LPTMR

RTC

LPUART

SPI x2

BME

LTC(AESA)

Flash

256 KB

Radio

FlexNVM

256 KB

AIPS-Lite

TRNG

FlexRAM

8 KB

IPS

(for RSIM)

IPS

VREF

VDCDC_IN

DCDC

CMT

Figure 1. KW39 Detailed Block Diagram

32K Osc

32M Osc

IRC

MCG

Arm Cortex M0+ Core

DMA MUX

4 MHz

IRC

32 kHz

Serial Wire Debug

DAP MDM

NVIC

WIC

FLL

DWT

MTB

IOPORT

Unified Bus

4ch DMA

Data stream

AHBLite

M2A

M3

M0

Crossbar-Lite Switch (AXBS)

S3

S2

S0

S1

SIM

ADC

FlexCAN

PIT

I2C x2

GPIO

Flash

Controller

64 KByte

SRAM

SMC

RCM

PMC

CMP

TPM x3

LPTMR

RTC

LPUART x2

SPI x2

BME

LTC(AESA)

Flash

256 KB

FlexNVM

256 KB

Radio

AIPS-Lite

TRNG

FlexRAM

8 KB

IPS

(for RSIM)

IPS

VREF

VDCDC_IN

DCDC

CMT

Figure 2. KW38 Detailed Block Diagram

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MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Feature Descriptions

32K Osc

32M Osc

IRC

MCG

Arm Cortex M0+ Core

4 MHz

DMA MUX

4ch DMA

IRC

32 kHz

Serial Wire Debug

DAP MDM

NVIC

WIC

FLL

DWT

MTB

IOPORT

Unified Bus

Data stream

M3

AHBLite

M2A

M0

Crossbar-Lite Switch (AXBS)

S3

S2

S0

S1

SIM

ADC

PIT

I2C x2

GPIO

Flash

Controller

64 KByte

SRAM

SMC

RCM

PMC

CMP

TPM x3

LPTMR

RTC

LPUART

SPI x2

BME

LTC(AESA)

Flash

512 KB

Radio

Prg Acc RAM

8 KB

AIPS-Lite

TRNG

IPS

(for RSIM)

IPS

VREF

VDCDC_IN

DCDC

CMT

Figure 3. KW37 Detailed Block Diagram

Table 1. List of IPs in block diagrams

Acronym

Definition

Analog-to-Digital Converter

ADC

AESA

AIPS

BME

CMP

CMT

DAP

DMA

Advanced Encryption Standard Accelerator

Peripheral Bridge

Bit Manipulation Engine

Comparator

Carrier Modulator Timer

Debug Access Port

Direct Memory Access

Direct Memory Access Multiplexer

Data Watchpoint and Trace

Frequency-Locked Loop

General Purpose Input/Output

Inter-integrated Circuit

Internal Reference Clock

Low-Power Timer

DMAMUX

DWT

FLL

GPIO

I2C

IRC

LPTMR

LPUART

LTC

Low-Power UART

LP Trusted Cryptography

Multipurpose Clock Generator

Miscellaneous Debug Module

Micro Trace Buffer

MCG

MDM

MTB

NVIC

OSC

Nested Vectored Interrupt Controller

Oscillator

PIT

Periodic Interrupt Timer

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

7

NXP Semiconductors

Feature Descriptions

Table 1. List of IPs in block diagrams (continued)

Acronym

Definition

Power Management Control

PMC

PORT

Prg Acc RAM

RCM

Port Control and Interrupt

Flash Programming Acceleration RAM

Reset Control Module

RSIM

RTC

Radio System Integration Module

Real-Time Clock

SIM

System Integration Module

System Mode Controller

Serial Peripheral Interface

True Random Number Generator

Voltage Reference

SMC

SPI

TRNG

VREF

2.2 Radio features

Operating frequencies:

• 2.4 GHz ISM band (2400-2483.5 MHz)

• Medical Body Area Network frequency band (MBAN) 2360-2400 MHz

Supported standards:

• Bluetooth Low Energy Version 5.0 compliant radio supporting all mandatory and

optional features including:

• Bluetooth LE 4.2 errata

• 2 Mbit/s high-speed mode

• Long range coded PHY (125/500 kbit/s)

• Advertising Extensions

• High duty cycle non-connectable advertising

• Channel selection algorithm #2

• Support for up to 8 simultaneous Bluetooth LE hardware connections in any

master, slave combination

• Bluetooth LE Application Profiles

• Generic FSK modulation supporting data rates of 250, 500, 1000 and 2000 kbit/s

Other features:

• Programmable transmit output power up to +5 dBm with greater than 30 dB power

control dynamic range

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MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Feature Descriptions

• 26 MHz and 32 MHz crystals supported for Bluetooth LE and Generic FSK

modes

• Up to 26 devices supported by whitelist in hardware

• Up to 8 private resolvable addresses supported in hardware

• Supports DMA capture of IQ data and phase for localization applications

• Support for distance estimation and direction finding applications

• Integrated on-chip balun

• Single ended bidirectional RF port shared by transmit and receive

• Low external component count

• Supports transceiver range extension using external PA and/or LNA

2.3 Microcontroller features

Arm Cortex-M0+ CPU

• Up to 48 MHz CPU

• As compared to Cortex-M0, the Cortex-M0+ uses an optimized 2-stage pipeline

microarchitecture for reduced power consumption and improved architectural

performance (cycles per instruction)

• Supports up to 32 interrupt request sources

• Binary compatible instruction set architecture with the Cortex-M0 core

• Thumb instruction set combines high code density with 32-bit performance

• Serial Wire Debug (SWD) reduces the number of pins required for debugging

• Micro Trace Buffer (MTB) provides lightweight program trace capabilities using

system RAM as the destination memory

Nested Vectored Interrupt Controller (NVIC)

• 32 vectored interrupts, 4 programmable priority levels

• Includes a single non-maskable interrupt

Wake-up Interrupt Controller (WIC)

• Supports interrupt handling when system clocking is disabled in low-power

modes

• Takes over and emulates the NVIC behavior when correctly primed by the NVIC

on entry to very-deep-sleep

• A rudimentary interrupt masking system with no prioritization logic signals for

wake-up as soon as a non-masked interrupt is detected

Debug Controller

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

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NXP Semiconductors

Feature Descriptions

• Two-wire Serial Wire Debug (SWD) interface

• Hardware breakpoint unit for 2 code addresses

• Hardware watchpoint unit for 2 data items

• Micro Trace Buffer for program tracing

On-Chip Memory

• Up to 512 KB Flash

• KW39/38 contains 256 KB program flash with ECC and 256 KB FlexNVM

enabling EEPROM emulation.

• KW37 contains 512 KB program flash with ECC.

• Flash implemented as two equal blocks each of 256 KB block. Code can

execute or read from one block while the other block is being erased or

programmed on KW37 only.

• Firmware distribution protection. Program flash can be marked execute-only

on a per-sector (8 KB) basis to prevent firmware contents from being read by

third parties.

• 64 KB SRAM

• KW39/38 contains 8 KB FlexRAM enabling EEPROM emulation.

• KW37 contains 8 KB program acceleration RAM.

• Security circuitry to prevent unauthorized access to RAM and flash contents

through the debugger

2.4 System features

Power Management Control Unit (PMC)

• Programmable power saving modes

• Available wake-up from power saving modes via internal and external sources

• Integrated Power-on Reset (POR)

• Integrated Low Voltage Detect (LVD) with reset (brownout) capability

• Selectable LVD trip points

• Programmable Low Voltage Warning (LVW) interrupt capability

• Individual peripheral clocks can be gated off to reduce current consumption

• Internal Buffered bandgap reference voltage

• Factory programmed trim for bandgap and LVD

• 1 kHz Low-power Oscillator (LPO)

DC-DC Converters

10

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Feature Descriptions

• Internal switched mode power supply supporting Buck and Bypass operating

modes

• Buck operation supports external voltage sources of 2.1 V to 3.6 V

• When DC-DC is not used, the device supports an external voltage range of 1.5 V

to 3.6 V (1.5 - 3.6 V on VDD_RF1, VDD_RF2, VDD_RF3 and

VDD_1P5OUT_PMCIN pins. 1.71 - 3.6 V on VDD_0, VDD_1, and VDDA pins)

• An external inductor is required to support the Buck mode

• The DC-DC Converter VDD_1P8OUT current drive for external devices (MCU

in RUN mode, Radio is enabled, other peripherals are disabled)

• Up to 45 mA in buck mode with VDD_1P8OUT = 1.8 V

• Up to 27 mA in buck mode with VDD_1P8OUT = 3.0 V

Direct Memory Access (DMA) Controller

• All data movement via dual-address transfers: read from source, write to

destination

• Programmable source and destination addresses and transfer size

• Support for enhanced addressing modes

• 4-channel implementation that performs complex data transfers with minimal

intervention from a host processor

• Internal data buffer, used as temporary storage to support 16- and 32-byte

transfers

• Connections to the crossbar switch for bus mastering the data movement

• Transfer Control Descriptor (TCD) organized to support two-deep, nested transfer

operations

• 32-byte TCD stored in local memory for each channel

• An inner data transfer loop defined by a minor byte transfer count

• An outer data transfer loop defined by a major iteration count

• Channel activation via one of three methods:

• Explicit software initiation

• Initiation via a channel-to-channel linking mechanism for continuous

transfers

• Peripheral-paced hardware requests, one per channel

• Fixed-priority and round-robin channel arbitration

• Channel completion reported via optional interrupt requests

• One interrupt per channel, optionally asserted at completion of major iteration

count

• Optional error terminations per channel and logically summed together to form

one error interrupt to the interrupt controller

• Optional support for scatter/gather DMA processing

• Support for complex data structures

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

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NXP Semiconductors

Feature Descriptions

DMA Channel Multiplexer (DMA MUX)

• 4 independently selectable DMA channel routers

• 2 periodic trigger sources available

• Each channel router can be assigned to 1 of the peripheral DMA sources

COP Watchdog Module

• Independent clock source input (independent from CPU/bus clock)

• Choice between two clock sources

• LPO oscillator

• Bus clock

System Clocks

• Both 26 MHz and 32 MHz crystal reference oscillator supported for Bluetooth LE

and Generic FSK modes

• MCU can derive its clock either from the crystal reference oscillator or the

Frequency-locked Loop (FLL)¹

• 32.768 kHz crystal reference oscillator used to maintain precise Bluetooth Low

Energy timing in low-power modes

• Multipurpose Clock Generator (MCG)

• Internal reference clocks — Can be used as a clock source for other on-chip

peripherals

• On-chip RC oscillator range of 31.25 kHz to 39.0625 kHz with 3% accuracy

across full temperature range

• On-chip 4 MHz oscillator with 11% accuracy across full temperature range

• Frequency-locked Loop (FLL) controlled by internal or external reference

• 20 MHz to 48 MHz FLL output

Unique Identifiers

• 80-bit Unique ID represents a unique identifier for each chip

• 40-bit unique Media Access Control (MAC) address, which can be used to build a

unique 48-bit Bluetooth Low Energy MAC address

2.5 Peripheral features

16-bit Analog-to-Digital Converter (ADC)

• Linear successive approximation algorithm with 16-bit resolution

• Output formatted in differential-ended 16-, 13-, 11-, and 9-bit mode

1. Clock options can have restrictions based on the chosen SoC configuration.

12

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Feature Descriptions

• Output formatted in single-ended 16-, 12-, 10-, and 8-bit mode

• Single or continuous conversion

• Configurable sample time and conversion speed/power

• Conversion rates in 16-bit mode with no averaging up to ~500Ksamples/sec

• Input clock selection

• Operation in low-power modes for lower noise operation

• Asynchronous clock source for lower noise operation

• Selectable asynchronous hardware conversion trigger

• Automatic compare with interrupt for less-than, or greater than, or equal to

programmable value

• Temperature sensor

• Battery voltage measurement

• Hardware average function

• Selectable voltage reverence

• Self-calibration mode

High-Speed Analog Comparator (CMP)

• 6-bit DAC programmable reference generator output

• Up to eight selectable comparator inputs; each input can be compared with any

input by any polarity sequence

• Selectable interrupt on rising edge, falling edge, or either rising or falling edges of

comparator output

• Two performance modes:

• Shorter propagation delay at the expense of higher power

• Low-power, with longer propagation delay

• Operational in all MCU power modes except VLLS0 mode

Voltage Reference(VREF1)

• Programmable trim register with 0.5 mV steps, automatically loaded with factory

trimmed value upon reset

• Programmable buffer mode selection:

• Off

• Bandgap enabled/standby (output buffer disabled)

• High-power buffer mode (output buffer enabled)

• 1.2 V output at room temperature

• VREF_OUT output signal

Low-power Timer (LPTMR)

• One channel

• Operation as timer or pulse counter

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

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Feature Descriptions

• Selectable clock for prescaler/glitch filter

• 1 kHz internal LPO

• External low-power crystal oscillator

• Internal reference clock

• Configurable glitch filter or prescaler

• Interrupt generated on timer compare

• Hardware trigger generated on timer compare

• Functional in all power modes

Timer/PWM (TPM)

• TPM0: 4 channels, TPM1 and TPM2: 2 channels each

• Selectable source clock

• Programmable prescaler

• 16-bit counter supporting free-running or initial/final value, and counting is up or

up-down

• Input capture, output compare, and edge-aligned and center-aligned PWM modes

• Input capture and output compare modes

• Generation of hardware triggers

• TPM1 and TPM2: Quadrature decoder with input filters

• Global time base mode shares single time base across multiple TPM instances

Programmable Interrupt Timer (PIT)

• Up to 2 interrupt timers for triggering ADC conversions

• 32-bit counter resolution

• Clocked by bus clock frequency

Real-Time Clock (RTC)

• 32-bit seconds counter with 32-bit alarm

• Can be invalidated on detection of tamper detect

• 16-bit prescaler with compensation

• Register write protection

• Hard Lock requires MCU POR to enable write access

• Soft lock requires POR or software reset to enable write/read access

• Capable of waking up the system from low-power modes

Inter-Integrated Circuit (I²C)

• Two channels

• Compatible with I2C bus standard and SMBus Specification Version 2 features

• Up to 400 kHz operation

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MKW39/38/37 Data Sheet, Rev. 7, 03/2020

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Feature Descriptions

• Multi-master operation

• Software programmable for one of 64 different serial clock frequencies

• Programmable slave address and glitch input filter

• Interrupt driven byte-by-byte data transfer

• Arbitration lost interrupt with automatic mode switching from master to slave

• Calling address identification interrupt

• Bus busy detection broadcast and 10-bit address extension

• Address matching causes wake-up when processor is in low-power mode

LPUART

• One channel (2 channels on KW38)

• Full-duplex operation

• Standard mark/space Non-return-to-zero (NRZ) format

• 13-bit baud rate selection with fractional divide of 32

• Programmable 8-bit or 9-bit data format

• Programmable 1 or 2 stop bits

• Separately enabled transmitter and receiver

• Programmable transmitter output polarity

• Programmable receive input polarity

• 13-bit break character option

• 11-bit break character detection option

• Two receiver wake-up methods:

• Idle line wake-up

• Address mark wake-up

• Address match feature in receiver to reduce address mark wake-up ISR overhead

• Interrupt or DMA driven operation

• Receiver framing error detection

• Hardware parity generation and checking

• Configurable oversampling ratio to support from 1/4 to 1/32 bit-time noise

detection

• Operation in low-power modes

• Hardware Flow Control RTS\CTS

• Functional in Stop/VLPS modes

• Break detect supporting LIN

Serial Peripheral Interface (SPI)

• Two independent SPI channels

• Master and slave mode

• Full-duplex, three-wire synchronous transfers

• Programmable transmit bit rate

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

15

NXP Semiconductors

Feature Descriptions

• Double-buffered transmit and receive data registers

• Serial clock phase and polarity options

• Slave select output

• Control of SPI operation during wait mode

• Selectable MSB-first or LSB-first shifting

• Support for both transmit and receive by DMA

Carrier Modulator Timer (CMT)

• Four modes of operation

• Time; with independent control of high and low times

• Baseband

• Frequency shift key (FSK)

• Direct software control of CMT_IRO signal

• Extended space operation in time, baseband, and FSK modes

• Selectable input clock divider

• Interrupt on end of cycle

• Ability to disable CMT_IRO signal and use as timer interrupt

General Purpose Input/Output (GPIO)

• Hysteresis and configurable pull up device on all input pins

• Independent pin value register to read logic level on digital pin

• All GPIO pins can generate IRQ and wake-up events

• Configurable drive strength on some output pins

• GPIO can be configured to function as a interrupt driven keyboard scanning matrix;

in the 48-pin package there are a total of 25 digital pins

FlexCAN (for KW38 only)

• Full implementation of the CAN with Flexible Data Rate (CAN FD) protocol

specification and CAN protocol specification, Version 2.0 B

• Flexible Message Buffers (MBs); there are total 32 MBs of 8 bytes data length

each, configurable as Rx or Tx, all supporting standard and extended messages

• Programmable clock source to the CAN Protocol Interface, either peripheral clock

or oscillator clock

• Capability to select priority between mailboxes and Rx FIFO during matching

process

16

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Feature Descriptions

• Powerful Rx FIFO ID filtering, capable of matching incoming IDs against either

128 extended, 256 standard, or 512 partial (8 bit) IDs, with up to 32 individual

masking capability

• Each individual MB forms by 16, 24, 40, or 72 bytes, depending on the quantity

of data bytes allocated for the message payload: 8, 16, 32, or 64 data bytes,

respectively

2.6 Security Features

Advanced Encryption Standard Accelerator(AES-128 Accelerator)

The Advanced Encryption Standard Accelerator (AESA) module is a standalone

hardware coprocessor capable of accelerating the 128-bit advanced encryption

standard (AES) cryptographic algorithms.

The AESA engine supports the following cryptographic features.

LTC includes the following features:

• Cryptographic authentication

• Message Authentication Codes (MAC)

• Cipher-based MAC (AES-CMAC)

• Extended cipher block chaining message authentication code (AES-

XCBC-MAC)

• Auto padding

• Integrity Check Value(ICV) checking

• Authenticated encryption algorithms

• Counter with CBC-MAC (AES-CCM)

• Symmetric key block ciphers

• AES (128-bit keys)

• Cipher modes:

• AES-128 modes

• Electronic Codebook (ECB)

• Cipher Block Chaining (CBC)

• Counter (CTR)

• Secure scan

True Random Number Generator (TRNG)

True Random Number Generator (TRNG) is a hardware accelerator module that

constitutes a high-quality entropy source.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

17

NXP Semiconductors

Transceiver Description

• TRNG generates a 512-bit (4x 128-bit) entropy as needed by an entropy-consuming

module, such as a deterministic random number generator.

• TRNG output can be read and used by a deterministic pseudo-random number

generator (PRNG) implemented in software.

• TRNG-PRNG combination achieves NIST-compliant true randomness and

cryptographic-strength random numbers using the TRNG output as the entropy

source.

• A fully FIPS 180 compliant solution can be realized using the TRNG together with

a FIPS-compliant deterministic random number generator and the SoC-level

security.

Flash Memory Protection

The on-chip flash memory controller enables the following useful features:

• Program flash protection scheme prevents accidental program or erase of stored

data.

• Automated, built-in, program and erase algorithms with verify.

• Read access to one program flash block is possible while programming or erasing

data in the other program flash block.

3 Transceiver Description

• Direct Conversion Receiver (Zero IF)

• Constant Envelope Transmitter

• Low Transmit and Receive Current Consumption

• Low bill of material (BOM) radio

3.1 Transceiver Functions

Receive

The receiver architecture is Zero IF (ZIF) where the received signal after passing

through RF front end is down-converted to a baseband signal. The signal is filtered and

amplified before it is fed to analog-to-digital converter. The digital signal then

decimates to a baseband clock frequency before it digitally processes, demodulates and

passes on to packet processing/link-layer processing.

Transmit

18

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Transceiver Description

The transmitter transmits GFSK/FSK modulation having power and channel selection

adjustment per user application. After the channel of operation is determined, coarse

and fine-tuning is executed within the Frac-N PLL to engage signal lock. After signal

lock is established, the modulated buffered signal is routed to a multi-stage amplifier

for transmission..

3.2 Key Specifications

KW39/38/37 meets or exceeds all Bluetooth Low Energy version 5.0 performance

specifications. The key specifications for the KW39/38/37 are:

Frequency Band:

• ISM Band: 2400 to 2483.5 MHz

• MBAN Band: 2360 to 2400 MHz

Full Bluetooth Low Energy version 5.0 modulation scheme:

• Symbol rate: Uncoded PHY (1, 2 Mbit/s), Coded PHY (125, 500 kbit/s)

• Modulation: GFSK BT=0.5, h=0.5

• Receiver sensitivity: –98 dBm, typical for Bluetooth LE 1 Mbit/s, –105 dBm for

Bluetooth LE-LR 125 kbit/s; for all other modes, refer Receiver Feature

Summary.

• Programmable transmitter output power: –30 dBm to +5 dBm

Generic FSK modulation scheme:

• Symbol rate: 250, 500, 1000, and 2000 kbit/s

• Modulation(s): GFSK (modulation index = 0.32, 0.5, 0.7, and 1.0, BT = 0.5), and

MSK

• Receiver Sensitivity: Mode and data rate dependent. –101 dBm typical for GFSK

(r=250 kbit/s, BT = 0.5, h = 0.5)

3.3 Channel Map Frequency Plans

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

19

NXP Semiconductors

Transceiver Description

3.3.1 Channel Plan for Bluetooth Low Energy

This section describes the frequency plan / channels associated with 2.4 GHz ISM and

MBAN bands for Bluetooth Low Energy.

2.4 GHz ISM Channel numbering:

• Fc=2402 + k * 2 MHz, k=0,.........,39.

MBAN Channel numbering:

• Fc=2360 + k in MHz, for k=0,.....,39

where k is the channel number.

Table 2. 2.4 GHz ISM and MBAN frequency plan and channel designations

2.4 GHz ISM¹

MBAN²

2.4GHz ISM + MBAN

Channel

Freq (MHz)

2402

2404

2406

2408

2410

2412

2414

2416

2418

2420

2422

2424

2426

2428

2430

2432

2434

2436

2438

2440

2442

2444

2446

2448

Channel

Freq (MHz)

2360

2361

2362

2363

2364

2365

2366

2367

2368

2369

2370

2371

2372

2373

2374

2375

2376

2377

2378

2379

2380

2381

2382

2383

Freq (MHz)

2390

2391

2392

2393

2394

2395

2396

2397

2398

2402

2404

2406

2408

2410

2412

2414

2416

2418

2420

2422

2424

2426

2428

2430

0

1

0

1

28

29

30

31

32

33

34

35

36

0

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

10

11

12

13

14

15

16

17

18

19

20

21

22

23

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Table continues on the next page...

20

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

Transceiver Electrical Characteristics

Table 2. 2.4 GHz ISM and MBAN frequency plan and channel designations (continued)

2.4 GHz ISM¹

MBAN²

2.4GHz ISM + MBAN

Channel

Freq (MHz)

2450

2452

2454

2456

2458

2460

2462

2464

2466

2468

2470

2472

2474

2476

2478

2480

Channel

24

Freq (MHz)

2384

2385

2386

2387

2388

2389

2390

2391

2392

2393

2394

2395

2396

2397

2398

2399

Freq (MHz)

2432

2434

2436

2438

2440

2442

2444

2446

2448

2450

2452

2454

2456

2476

2478

2480

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

15

16

17

18

19

20

21

22

23

24

25

26

27

37

38

39

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

1. ISM frequency of operation spans from 2400.0 MHz to 2483.5 MHz

2. Per FCC guideline rules, Bluetooth Low Energy single mode operation is allowed in these channels.

3.3.2 Other Channel Plans

The RF synthesizer can be configured to use any channel frequency between 2.36 and

2.487 GHz.

4 Transceiver Electrical Characteristics

4.1 Radio operating conditions

Table 3. Radio operating conditions

Characteristic

Symbol

Min

Typ

Max

Unit

Input Frequency

f_in

2.360

—

2.480

GHz

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

21

NXP Semiconductors

Transceiver Electrical Characteristics

Table 3. Radio operating conditions (continued)

Characteristic

Symbol

T_A

Min

–40

—

Typ

25

Max

105

10

Unit

°C

Ambient Temperature Range

Maximum RF Input Power

P_max

f_ref

—

dBm

Crystal Reference Oscillator Frequency

26 MHz or 32 MHz

1

1. The recommended crystal accuracy is 40 ppm including initial accuracy, mechanical, temperature, and aging factors.

4.2 Receiver Feature Summary

Table 4. Top-Level Receiver Specifications (TA=25 °C, nominal process unless otherwise

noted)

Characteristic¹

Symbol

Min.

Typ.

Max.

Unit

Receiver General Specifications

Supply current power down on VDD_RFx supplies

I_pdn

—

200

1000

—

nA

Supply current Rx On with DC-DC converter enable

(Buck; V_{DCDC_IN}= 3.6 V) ^{, 2}

I_Rxon

6.36

mA

Supply current Rx On with DC-DC converter disabled

(Bypass) ²

I_Rxon

—

17.78

—

mA

Input RF Frequency

f_in

2.360

—

–101

—

2.4835

—

GHz

dBm

dB

GFSK Rx Sensitivity(250 kbit/s GFSK-BT=0.5, h=0.5)

Max Rx RF Input Signal Level

SENS_GFSK

RF_in,max

NF_HG

—

10

Noise Figure for maximum gain mode @ typical

sensitivity

—

7.5

—

Receiver Signal Strength Indicator Range³

Receiver Signal Strength Indicator Resolution

Typical RSSI variation over frequency

Typical RSSI variation over temperature

Narrowband RSSI accuracy⁵

RSSI_Range

RSSI_Res

–100

—

1

5⁴

—

2

dBm

dB

–2

—

–54

dB

–2

2

dB

RSSI_Acc

—

–3

3

dB

Spurious Emission < 1.6 MHz offset (Measured with 100

kHz resolution and average detector. Device transmit on

RF channel with center frequency fc and spurious power

measured in 1 MHz at RF frequency f), where |f-fc|< 1.6

MHz

—

dBc

Spurious Emission > 2.5 MHz offset (Measured with 100

kHz resolution and average detector. Device transmit on

RF channel with center frequency fc and spurious power

measured in 1 MHz at RF frequency f), where |f-fc|> 2.5

MHz⁶

—

–70

—

dBc

Bluetooth LE coded 125 kbit/s (Long Range, 8x Spreading)

Bluetooth LE LR 125 kbit/s Sensitivity⁷

SENS_BLELR125

Table continues on the next page...

–105

dBm

22

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Transceiver Electrical Characteristics

Table 4. Top-Level Receiver Specifications (TA=25 °C, nominal process unless otherwise

noted) (continued)

Characteristic¹

Symbol

Min.

Typ.

Max.

Unit

Bluetooth LE LR 125 kbit/s Co-channel Interference

(Wanted signal at –67 dBm, BER <0.1%. Measurement

resolution 1 MHz).

COSEL_BLELR125

–2

dB

Adjacent/Alternate Channel Performance⁸

Bluetooth LE LR 125 kbit/s Adjacent +/–1 MHz

Interference offset (Wanted signal at –67 dBm, BER

<0.1%. Measurement resolution 1 MHz.)

SEL_{BLELR125, 1}

—

10

50

55

60

—

dB

MHz

Bluetooth LE LR 125 kbit/s Adjacent +/–2 MHz

Interference offset (Wanted signal at –67 dBm, BER

<0.1%. Measurement resolution 1 MHz.)

SEL_{BLELR125, 2}

MHz

Bluetooth LE LR 125 kbit/s Alternate +/–3 MHz

Interference offset (Wanted signal at –67 dBm, BER

<0.1%. Measurement resolution 1 MHz.)

SEL_{BLELR125, 3}

MHz

Bluetooth LE LR 125 kbit/s Alternate > +/–5 MHz

Interference offset (Wanted signal at –67 dBm, BER

<0.1%. Measurement resolution 1 MHz.)

SEL_{BLELR125, 5+}

MHz

Bluetooth LE coded 500 kbit/s (Long Range, 2x Spreading)

Bluetooth LE LR 500 kbit/s Sensitivity⁷

SENS_BLELR500

—

–101

–4

—

dBm

dB

Bluetooth LE LR 500 kbit/s Co-channel Interference

(Wanted signal at –67 dBm, BER <0.1%. Measurement

resolution 1 MHz).

COSEL_BLELR500

Adjacent/Alternate Channel Performance⁸

Bluetooth LE LR 500 kbit/s Adjacent +/–1 MHz

Interference offset (Wanted signal at –67 dBm, BER

<0.1%. Measurement resolution 1 MHz.)

SEL_{BLELR500, 1}

—

9

—

dB

MHz

Bluetooth LE LR 500 kbit/s Adjacent +/–2 MHz

Interference offset (Wanted signal at –67 dBm, BER

<0.1%. Measurement resolution 1 MHz.)

SEL_{BLELR500, 2}

50

55

60

MHz

Bluetooth LE LR 500 kbit/s Alternate +/–3 MHz

Interference offset (Wanted signal at –67 dBm, BER

<0.1%. Measurement resolution 1 MHz.)

SEL_{BLELR500, 3}

MHz

Bluetooth LE LR 500 kbit/s Alternate > +/–5 MHz

Interference offset (Wanted signal at –67 dBm, BER

<0.1%. Measurement resolution 1 MHz.)

SEL_{BLELR500, 5+}

MHz

Bluetooth LE uncoded 1 Mbit/s

Bluetooth LE 1 Mbit/s Sensitivity⁷

SENS_BLE1M

—

–98

–7

—

dBm

dB

Bluetooth LE 1 Mbit/s Co-channel Interference (Wanted

signal at –67 dBm, BER <0.1%. Measurement resolution

1 MHz).

Adjacent/Alternate Channel Selectivity Performance⁸

COSEL_BLE1M

Bluetooth LE 1 Mbit/s Selectivity +/–1 MHz Interference

offset (Wanted signal at –67 dBm, BER <0.1%.

Measurement resolution 1 MHz.)

SEL_{BLE1M, 1 MHz}

0

dB

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

23

NXP Semiconductors

Transceiver Electrical Characteristics

Table 4. Top-Level Receiver Specifications (TA=25 °C, nominal process unless otherwise

noted) (continued)

Characteristic¹

Symbol

Min.

Typ.

Max.

Unit

Bluetooth LE 1 Mbit/s Adjacent +/–2 MHz Interference

offset (Wanted signal at –67 dBm, BER <0.1%.

Measurement resolution 1 MHz.)

SEL_{BLE1M, 2 MHz}

—

42

—

dB

Bluetooth LE 1 Mbit/s Selectivity +/–3 MHz Interference

offset (Wanted signal at –67 dBm, BER <0.1%.

Measurement resolution 1 MHz.)

SEL_{BLE1M, 3 MHz}

—

50

55

—

dB

Bluetooth LE 1 Mbit/s Alternate ≥ +/–5 MHz Interference SEL_{BLE1M, 5+ MHz}

offset (Wanted signal at –67 dBm, BER <0.1%.

Measurement resolution 1 MHz.)

Intermodulation Performance

Bluetooth LE 1 Mbit/s Intermodulation with continuous

wave interferer at 3 MHz and modulated interferer is at

6 MHz (Wanted signal at –67 dBm, BER<0.1%.)

IM3-6_BLE1M

—

–42

–23

—

dBm

Bluetooth LE 1 Mbit/s Intermodulation with continuous

wave interferer at 5 MHz and modulated interferer is at

10 MHz (Wanted signal at –67 dBm, BER<0.1%.)

IM5-10_BLE1M

Blocking Performance

Bluetooth LE 1 Mbit/s Out of band blocking from 30 MHz

to 1000 MHz and 4000 MHz to 5000 MHz (Wanted

signal at –67 dBm, BER<0.1%. Interferer continuous

wave signal.)^{, 9, 10}

—

3

—

dBm

Bluetooth LE 1 Mbit/s Out of band blocking from 1000

MHz to 2000 MHz and 3000 MHz to 4000 MHz (Wanted

signal at –67 dBm, BER<0.1%. Interferer continuous

wave signal.)

Bluetooth LE 1 Mbit/s Out of band blocking from 2001

MHz to 2339 MHz and 2484 MHz to 2999 MHz (Wanted

signal at –67 dBm, BER<0.1%. Interferer continuous

wave signal.)¹⁰

–12

5

Bluetooth LE 1 Mbit/s Out of band blocking from 5000

MHz to 12750 MHz (Wanted signal at –67 dBm,

BER<0.1%. Interferer continuous wave signal.)¹⁰

Bluetooth LE uncoded 2 Mbit/s (High Speed)

Bluetooth LE 2 Mbit/s Sensitivity⁷

SENS_BLE2M

—

–95.5

–7

—

dBm

dB

Bluetooth LE 2 Mbit/s Co-channel Interference (Wanted

signal at –67 dBm, BER <0.1%. Measurement resolution

2 MHz).

COSEL_BLE2M

Adjacent/Alternate Channel Performance⁸

Bluetooth LE 2 Mbit/s Adjacent +/–2 MHz Interference

offset (Wanted signal at –67 dBm, BER <0.1%.

Measurement resolution 2 MHz.)

SEL_{BLE2M, 2 MHz}

—

3

—

dB

Bluetooth LE 2 Mbit/s Alternate +/–4 MHz Interference

offset (Wanted signal at –67 dBm, BER <0.1%.

Measurement resolution 2 MHz.)

SEL_{BLE2M, 4 MHz}

42

Table continues on the next page...

24

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Transceiver Electrical Characteristics

Table 4. Top-Level Receiver Specifications (TA=25 °C, nominal process unless otherwise

noted) (continued)

Characteristic¹

Symbol

Min.

Typ.

Max.

Unit

Bluetooth LE 2 Mbit/s Selectivity +/–6 MHz Interference

offset (Wanted signal at –67 dBm, BER <0.1%.

Measurement resolution 2 MHz.)

SEL_{BLE2M, 6 MHz}

—

50

—

dB

Bluetooth LE 2 Mbit/s Selectivity ≥ +/–10 MHz

Interference offset (Wanted signal at –67 dBm, BER

<0.1%. Measurement resolution 2 MHz.)

SEL_{BLE2M, 10+ MHz}

—

55

—

dB

Intermodulation Performance

Bluetooth LE 2 Mbit/s Intermodulation with continuous

wave interferer at 6 MHz and modulated interferer is at

12 MHz (Wanted signal at –67 dBm, BER<0.1%.)

IM6-12_BLE2M

IM10-20_BLE2M

—

–23

–24

—

dBm

Bluetooth LE 2 Mbit/s Intermodulation with continuous

wave interferer at 10 MHz and modulated interferer is

at 20 MHz (Wanted signal at –67 dBm, BER<0.1%.)

Blocking Performance

Bluetooth LE 2 Mbit/s Out of band blocking from 30 MHz

to 1000 MHz and 4000 MHz to 5000 MHz (Wanted

signal at –67 dBm, BER<0.1%. Interferer continuous

wave signal.)⁹,¹⁰

—

3

–6

–12

5

—

dBm

Bluetooth LE 2 Mbit/s Out of band blocking from 1000

MHz to 2000 MHz and 3000 MHz to 4000 MHz (Wanted

signal at –67 dBm, BER<0.1%. Interferer continuous

wave signal.)

Bluetooth LE 2 Mbit/s Out of band blocking from 2001

MHz to 2339 MHz and 2484 MHz to 2999 MHz (Wanted

signal at –67 dBm, BER<0.1%. Interferer continuous

wave signal.)¹⁰

Bluetooth LE 2 Mbit/s Out of band blocking from 5000

MHz to 12750 MHz (Wanted signal at –67 dBm,

BER<0.1%. Interferer continuous wave signal.)¹⁰

1. All the Rx parameters are measured at the KW39/38/37 RF pins.

2. Transceiver power consumption.

3. Narrow-band RSSI mode.

4. With RSSI_CTRL_0.RSSI_ADJ field calibrated to account for antenna to RF input losses.

5. With one point calibration over frequency and temperature.

6. Exceptions allowed for twice the reference clock frequency(fref) multiples.

7. Measured at 0.1% BER using 37 byte long packets in maximum gain mode and nominal conditions.

8. Bluetooth LE adjacent and alternate selectivity performance is measured with modulated interference signals.

9. Exceptions allowed for carrier frequency sub harmonics.

10. Exceptions allowed for carrier frequency harmonics.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

25

NXP Semiconductors

Transceiver Electrical Characteristics

Table 5. Receiver Specifications with Generic FSK Modulations

Adjacent/Alternate channel selectivity (dB)¹

Modulation

type

Data

rate

(kb/s)

Channel

BW (kHz) sensitivity

(dBm)

Typical

Desired Interferer Interferer Interferer Interferer

Co-

channel

signal

level

at 1ꢀ

channel

at 2ꢀ

channel

at 3ꢀ

channel

at 4ꢀ

channel

(dBm) BW offset BW offset BW offset BW offset

GFSK BT =

0.5, h = 0.32

2000

1000

2000

1000

500

2000

1000

4000

2000

1000

500

–90.5

–93.5

–94

–67

–85

39

36

46

44

43

39

44

47

50

48

47

56

49

43

53

55

58

52

50

59

56

46

56

59

61

54

53

60

57

50

59

61

64

–9

–8

–7

–6

–5

–4

GFSK BT =

0.5, h = 0.5

–97

–98.5

–100

–95

250

GFSK, BT =

0.5, h = 0.7

2000

1000

4000

2000

1600

–97.5

–96

GFSK, BT =

0.5, h = 1.0

1. Selectivity measured with an unmodulated blocker.

4.3 Transmit and PLL Feature Summary

• Supports constant envelope modulation of 2.4 GHz ISM and 2.36 GHz MBAN

frequency bands

• Fast PLL Lock time: < 25 µs

• Reference Frequency:

• 26 MHz and 32 MHz crystals supported for Bluetooth LE and Generic FSK

modes

Table 6. Top-Level Transmitter Specifications (TA=25 °C, nominal process unless otherwise

noted)

Characteristic¹

Symbol

Min.

Typ.

Max.

Unit

Transmitter General Specifications

Supply current power down on VDD_RFx supplies

I_pdn

—

200

5.7

—

nA

Supply current Tx On with P_RF= 0 dBm and DC-DC

converter enabled (Buck; VDD_{DCDC_in}= 3.6 V) ^{, 2}

I_TX0dBm

mA

Supply current Tx On with P_RF= 0 dBm and DC-DC

converter disabled (Bypass) ²

I_TX0dBmb

I_TX3.5dBm

I_TX3.5dBmb

—

16

6.9

19

—

mA

Supply current Tx On with P_RF= +3.5 dBm and DC-DC

converter enabled (Buck; VDD_{DCDC_in}= 3.6 V)²

Supply current Tx On with P_RF= +3.5 dBm and DC-DC

converter disabled (Bypass)²

Table continues on the next page...

26

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Transceiver Electrical Characteristics

Table 6. Top-Level Transmitter Specifications (TA=25 °C, nominal process unless otherwise

noted) (continued)

Characteristic¹

Symbol

Min.

Typ.

Max.

Unit

Supply current Tx On with P_RF= +5 dBm and DC-DC

converter enabled (Buck; VDD_{DCDC_in}= 3.6 V, LDO-HF

bumped)²

I_TX5dBm

—

8.0

—

mA

Supply current Tx On with P_RF= +5 dBm and DC-DC

converter disabled (Bypass, LDO-HF bumped)²

I_TX5dBmb

—

21

—

mA

Output RF Frequency

f_RFout

2.360

—

+5

2.4835

—

GHz

dBm

dB

Maximum RF Output Power; LDO-HF bumped ³

Maximum RF Output power, nominal power supply ⁴

Minimum RF Output power, nominal power supply ⁴

RF Output power control range

P_RF,maxV

P_RF,maxn

P_RF,minn

P_RFCR

—

+3.5

–30

35

—

Bluetooth LE Maximum Deviation of the Center

Frequency⁵

F_cdev,BLE

—

3

—

kHz

Bluetooth LE Frequency Hopping Support

YES

–46

Second Harmonic of Transmit Carrier Frequency (P_out

=

TXH2

TXH3

—

dBm/MHz

, 6

P_RF,max

)

Third Harmonic of Transmit Carrier Frequency (P_out

=

–50

6

P_RF,max

)

Bluetooth LE uncoded 1 Mbit/s / coded 125 kbit/s / coded 500 kbit/s

Bluetooth LE 1 Mbit/s Tx Output Spectrum 20dB BW

TXBW_BLE1M

1.0

—

MHz

kHz

Bluetooth LE 1 Mbit/s average frequency deviation using

a 00001111 modulation sequence

Δf1_avg,BLE1M

250

220

Bluetooth LE 1 Mbit/s average frequency deviation using

a 01010101 modulation sequence

Δf2_avg,BLE1M

kHz

Bluetooth LE 1 Mbit/s RMS FSK Error

FSK_err,BLE1M

3%

—

Bluetooth LE 1 Mbit/s Adjacent Channel Transmit Power

at 2 MHz offset^{, 7}

P_RF2MHz,BLE1M

—

–53

–59

dBm

Bluetooth LE 1 Mbit/s Adjacent Channel Transmit Power

at >= 3 MHz offset⁷

P_RF3MHz,BLE1M

—

Bluetooth LE uncoded 2 Mbit/s

Bluetooth LE 2 Mbit/s Tx Output Spectrum 20dB BW

TXBW_BLE2M

2.2

—

MHz

kHz

Bluetooth LE 2 Mbit/s average frequency deviation using

a 00001111 modulation sequence

Δf1_avg,BLE2M

500

420

Bluetooth LE 2 Mbit/s average frequency deviation using

a 01010101 modulation sequence

Δf2_avg,BLE2M

kHz

Bluetooth LE RMS FSK Error

FSK_err,BLE2M

4%

—

Bluetooth LE 2 Mbit/s Adjacent Channel Transmit Power

at 4 MHz offset⁷

P_RF2MHz,BLE2M

—

–57

–60

dBm

Bluetooth LE 2 Mbit/s Adjacent Channel Transmit Power

at >= 6 MHz offset⁷

P_RF3MHz,BLE2M

—

1. All the Tx parameters are measured at test hardware SMA connector.

2. Transceiver power consumption.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

27

NXP Semiconductors

Transceiver Electrical Characteristics

3. Measured at KW39/38/37 RF pins, with Vdd_RFx over 1.44 V and assuming an average T_xduty cycle <=24%. For T_x

output over +3.5 dBm, powered Vdd_RFx has to be higher than 1.44 V.

4. Measured at the KW39/38/37 RF pins.

5. Maximum drift of carrier frequency of the PLL during a Bluetooth LE packet with a nominal 32 MHz reference crystal.

6. Harmonic levels based on recommended 2 component match. Transmit harmonic levels depend on the quality of

matching components. Additional harmonic margin using a third matching component (1x shunt capacitor) is possible.

7. Measured at P_out= +5 dBm and recommended Tx match.

Transmit PA driver output as a function of the PA_POWER[5:0] field when measured

at the IC pins is as follows:

Figure 4. TX Pout (dBm) as function TX-PA Power Code at RF pins

Table 7. Transmit Output Power as a function of PA_POWER[5:0]

TX Pout (dBm)¹

PA_POWER[5:0]

T = –40 °C

–30.15

–24.05

–18.06

–14.56

–12.08

T = 25 °C

–31.38

–25.25

–19.26

–15.76

–13.29

T = 105 °C

–32.25

–26.09

–20.11

–16.61

–14.15

1

2

4

6

8

Table continues on the next page...

28

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

Transceiver Electrical Characteristics

Table 7. Transmit Output Power as a function of PA_POWER[5:0] (continued)

TX Pout (dBm)¹

PA_POWER[5:0]

T = –40 °C

–10.16

–8.59

–7.27

–6.16

–5.15

–4.25

–3.44

–2.70

–2.02

–1.39

–0.81

–0.34

0.18

T = 25 °C

–11.39

–9.82

–8.50

–7.39

–6.38

–5.48

–4.67

–3.94

–3.26

–2.64

–2.06

–1.58

–1.07

–0.59

–0.15

0.27

T = 105 °C

–12.24

–10.67

–9.36

–8.24

–7.24

–6.34

–5.53

–4.81

–4.14

–3.52

–2.95

–2.45

–1.95

–1.48

–1.04

–0.64

–0.24

0.14

10

12

14

16

18

20

22

24

26

28

30

32

34

36

38

40

42

44

46

48

50

52

54

56

58

60

62

0.66

1.10

1.52

1.92

0.65

2.30

1.03

2.67

1.39

0.49

2.99

1.71

0.80

3.32

2.04

1.14

3.63

2.35

1.44

3.92

2.64

1.74

4.19

2.91

2.00

4.44

3.17

2.27

4.68

3.41

2.51

4.90

3.64

2.74

1. Tx continuous wave power output at the RF pins with the recommended matching components mounted on PCB.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

29

NXP Semiconductors

Transceiver Electrical Characteristics

Figure 5. TX Pout (dBm) as function TX-PA Power Code at RF pins (LDO-HF bumped)

Table 8. Transmit Output Power as a function of PA_POWER[5:0] at elevated PA supply

TX Pout (dBm)¹

PA_POWER[5:0]

T = –40 °C

–28.48

–22.37

–16.39

–12.88

–10.38

–8.46

T = 25 °C

–29.55

–23.43

–17.45

–13.94

–11.45

–9.53

T = 105 °C

–30.38

–24.23

–18.26

–14.75

–12.27

–10.36

–8.79

1

2

4

6

8

10

12

14

16

18

20

22

24

–6.89

–7.96

–5.56

–6.63

–7.47

–4.43

–5.50

–6.34

–3.41

–4.49

–5.33

–2.51

–3.59

–4.43

–1.69

–2.77

–3.62

–0.94

–2.03

–2.89

Table continues on the next page...

30

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

System and Power Management

Table 8. Transmit Output Power as a function of PA_POWER[5:0] at elevated PA supply

(continued)

TX Pout (dBm)¹

PA_POWER[5:0]

T = –40 °C

–0.26

0.36

0.96

1.44

1.95

2.42

2.88

3.32

3.74

4.14

4.50

4.83

5.16

5.46

5.75

6.02

6.26

6.49

6.71

T = 25 °C

–1.35

–0.72

–0.14

0.34

T = 105 °C

–2.22

–1.60

–1.03

–0.54

–0.04

0.44

26

28

30

32

34

36

38

40

42

44

46

48

50

52

54

56

58

60

62

0.85

1.32

1.77

0.88

2.20

1.31

2.62

1.71

3.01

2.09

3.38

2.45

3.71

2.78

4.04

3.11

4.35

3.41

4.64

3.70

4.91

3.96

5.16

4.22

5.40

4.45

5.62

4.67

1. Tx continuous wave power output at the RF pins with the recommended matching components mounted on PCB.

5 System and Power Management

5.1 Power Management

The KW39/38/37 includes internal power management features that can be used to

control the power usage. The power management of the KW39/38/37 includes Power

Management Controller (PMC) and a DC-DC converter which can operate in a buck

or bypass configuration. The PMC is designed such that the RF radio remains in state-

retention while the core is in various stop modes. It makes sure that the device can

stay in low current consumption mode while the RF radio can wake-up quick enough

for communication.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

31

NXP Semiconductors

System and Power Management

5.1.1 DC-DC Converter

The features of the DC-DC converter include the following:

• Single inductor, multiple outputs.

• Buck mode (pin selectable; CFG=VDCDC_IN).

• Continuous or pulsed operation (hardware/software configurable).

• Power switch input to allow external control of power up, and to select DC-DC

bypass mode in which all the SoC power supplies (see Table 4) are externally

provided.

• Output signal to indicate power stable. Purpose is for the rest of the chip to be used

as a POR.

• Scaled battery output voltage suitable for SAR ADC utilization.

• Internal oscillator for support when the reference oscillator is not present.

5.2 Modes of Operation

The Arm Cortex-M0+ core in the KW39/38/37 has three primary modes of operation:

Run, Wait, and Stop modes. For each run mode, there is a corresponding wait and stop

mode. Wait modes are similar to Arm sleep modes. Stop modes are similar to Arm deep

sleep modes. The very low-power run (VLPR) operation mode can drastically reduce

runtime power when the maximum bus frequency is not required to handle the

application needs.

The WFI instruction invokes both wait and stop modes. The primary modes are

augmented in a number of ways to provide lower power based on application needs.

5.2.1 Power modes

The power management controller (PMC) provides multiple power options to allow the

user to optimize power consumption for the level of functionality needed.

Depending on the stop requirements of the user application, various stop modes are

available that provide state retention, partial power down, or full power down of certain

logic and/or memory. I/O states are held in all modes of operation. The following table

compares the various power modes available.

32

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

System and Power Management

For each run mode, there is a corresponding wait and stop mode. Wait modes are

similar to Arm sleep modes. Stop modes (VLPS, STOP) are similar to Arm sleep deep

mode. The very-low-power run (VLPR) operating mode can drastically reduce

runtime power when the maximum bus frequency is not required to handle the

application needs.

The three primary modes of operation are run, wait, and stop. The WFI instruction

invokes either wait or stop depending on the SLEEPDEEP bit in Cortex-M0+ System

Control Register. The primary modes are augmented in a number of ways to provide

lower power based on application needs.

Table 9. Power modes (At 25 deg C)

Power mode

Description

CPU

Radio

recovery

method

Normal Run (all

Allows maximum performance of chip.

—

Radio can be active

peripherals clock off)

Normal Wait - via

WFI

Allows peripherals to function, while allowing CPU

to go to sleep reducing power.

Interrupt

Normal Stop - via

WFI

Places chip in static state. Lowest power mode that

retains all registers while maintaining LVD

protection.

PStop2 (Partial Stop Core and system clocks are gated. Bus clock

Interrupt

2)

remains active. Masters and slaves clocked by bus

clock remain in Run or VLPRun mode. The clock

generators in MCG and the on-chip regulator in the

PMC also remain in Run or VLPRun mode.

PStop1 (Partial Stop Core, system clocks, and bus clock are gated. All

Interrupt

—

1)

bus masters and slaves enter Stop mode. The clock

generators in MCG and the on-chip regulator in the

PMC also remain in Run or VLPRun mode.

VLPR (Very Low-

power Run) (all

peripherals off)

Reduced frequency (1 MHz) Flash access mode,

regulator in low-power mode, LVD off. Internal

oscillator can provide low-power 4 MHz source for

core. (Values @2 MHz core/ 1 MHz bus and flash,

module off, execution from flash).

Radio operation is possible

only when DC-DC is

configured for continuous

mode.¹However, there may

be insufficient MIPS with a 4

MHz MCU to support much

in the way of radio operation.

Biasing is disabled when DC-DC is configured for

continuous mode in VLPR/W

VLPW (Very Low-

Similar to VLPR, with CPU in sleep to further reduce

Interrupt

power Wait) - via WFI power. (Values @4 MHz core/ 1 MHz bus, module

(all peripherals off)

off)

Biasing is disabled when DC-DC is configured for

continuous mode in VLPR/W

VLPS (Very Low-

Places MCU in static state with LVD operation off.

power Stop) via WFI Lowest power mode with ADC and all pin interrupts

functional. LPTMR, RTC, CMP can be operational.

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

33

NXP Semiconductors

System and Power Management

Table 9. Power modes (At 25 deg C) (continued)

Power mode

Description

CPU

Radio

recovery

method

Biasing is disabled when DC-DC is configured for

continuous mode in VLPS.

LLS3 (Low Leakage State retention power mode. LLWU, LPTMR, RTC,

Wake-up

Interrupt

Radio SOG is in state

retention in LLSx. The

Bluetooth LE/Generic FSK

DSM²logic can be active

using the 32 kHz clock

Stop)

CMP can be operational. All of the radio Sea of

Gates(SOG) logic is in state retention.

LLS2 (Low Leakage State retention power mode. LLWU, LPTMR, RTC,

Wake-up

Interrupt

Stop)

CMP can be operational. 16 KB or 32 KB of

programmable RAM can be powered on. All of the

radio SOG logic is in state retention.

VLLS3 (Very Low

Leakage Stop3)

Full SRAM retention. LLWU, LPTMR, RTC, CMP

can be operational. Radio SoG logic is power gated

and Radio Tx/Rx RAM keeps state retention.

Wake-up

Reset

Radio SoG is power gated in

VLLS3/2. Radio Tx/Rx RAM

keeps state retention in

VLLS3 and can be

configurable power gated in

VLLS2. The Bluetooth LE/

Generic FSK DSM logic can

be active using the 32 KHz

clock.

VLLS2 (Very Low

Leakage Stop2)

Partial SRAM retention. 16 KB or 32 KB of

programmable RAM can be powered on. LLWU,

LPTMR, RTC, CMP can be operational. All of the

Radio SoG logic is power gated. Radio Tx/Rx

SRAM can be configurable power gated.

Wake-up

Reset

VLLS1 (Very Low

All SRAM powered off. The 32-byte system register

Wake-up

Reset

Radio operation not

supported. The Radio SOG

is power-gated in VLLS1.

Radio state is lost at VLLS1

and lower power states.

Leakage Stop1) with file remains powered for customer-critical data.

RTC + 32 kHz OSC LLWU, LPTMR, RTC, CMP can be operational.

Radio logic is power gated.

VLLS1 (Very Low

Leakage Stop1) with file remains powered for customer-critical data.

All SRAM powered off. The 32-byte system register

Wake-up

Reset

LPTMR + LPO

LLWU, LPTMR, RTC, CMP can be operational.

VLLS0 is not supported with DC-DC.

VLLS0 (Very Low

Wake-up

Reset

Radio operation not

supported. The Radio digital

is power-gated in VLLS0.

Leakage Stop0) with

Brown-out Detection

The 32-byte system register file remains powered

for customer-critical data. Disable all analog

modules in PMC and retains I/O state and DGO

state. LPO disabled, POR brown-out detection

enabled, Pin interrupt only. Radio logic is power

gated.

VLLS0 (Very Low

Leakage Stop0)

without Brown-out

Detection

VLLS0 is not supported with DC-DC buck

configuration but is supported with bypass

configuration.

Wake-up

Reset

The 32-byte system register file remains powered

for customer-critical data. Disable all analog

modules in PMC and retains I/O state and DGO

state. LPO disabled, POR brown-out detection

disabled, Pin interrupt only. Radio logic is power

gated.

1. Biasing is disabled, but the Flash is in a low-power mode for VLPx, so this configuration can realize some power savings

over use of Run/Wait/Stop.

2. DSM refers to Radio's deep sleep mode. DSM does not refer to the Arm sleep deep mode.

34

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

KW39/38/37 Electrical Characteristics

6 KW39/38/37 Electrical Characteristics

6.1 AC electrical characteristics

Unless otherwise specified, propagation delays are measured from the 50% to the 50%

point, and rise and fall times are measured at the 20% and 80% points, as shown in the

following figure.

High

Low

V_IH

80%

50%

20%

Input Signal

Midpoint1

V_IL

Fall Time

Rise Time

The midpoint is V_IL+ (V_IH- V_IL) / 2

Figure 6. Input signal measurement reference

All digital I/O switching characteristics, unless otherwise specified, assume that the

output pins have the following characteristics.

• C_L=30 pF loads

• Slew rate disabled

• Normal drive strength

6.2 Nonswitching electrical specifications

6.2.1 Voltage and current operating requirements

Table 10. Voltage and current operating requirements

Symbol

Description

Min.

1.71

1.425

1.71

–0.1

Max.

3.6

0.1

Unit

V

Notes

V_DD

Supply voltage

V_{DD_1P5}DCDC V_{DD_1P5}output pin

V_DDAAnalog supply voltage

V

1

V

V_DD– V_DDAV_DD-to-V_DDAdifferential voltage

V_SS– V_SSAV_SS-to-V_SSAdifferential voltage

V

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

35

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 10. Voltage and current operating requirements (continued)

Symbol

Description

Min.

Max.

Unit

Notes

V_IH

Input high voltage

• 2.7 V ≤ V_DD≤ 3.6 V

• 1.7 V ≤ V_DD≤ 2.7 V

0.7 × V_DD

—

V

0.75 × V_DD

V_IL

Input low voltage

• 2.7 V ≤ V_DD≤ 3.6 V

• 1.7 V ≤ V_DD≤ 2.7 V

—

0.35 × V_DD

0.3 × V_DD

V

V_HYS

I_ICIO

Input hysteresis

0.06 × V_DD

–3

—

V

IO pin negative DC injection current — single pin

• V_IN< V_SS–0.3V

2

mA

I_ICcont

Contiguous pin DC injection current —regional limit,

includes sum of negative injection currents of 16

contiguous pins

–25

—

mA

• Negative current injection

V_ODPU

V_RAM

Open drain pullup voltage level

V_DD

1.2

V_DD

—

V

3

V_DDvoltage required to retain RAM

1. This limit applies in any DCDC mode.

2. All I/O pins are internally clamped to V_SSthrough an ESD protection diode. There is no diode connection to V_DD. If V_IN

greater than V_{IO_MIN}(= V_SS–0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If

this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting

resistor is calculated as R = (V_{IO_MIN}- V_IN)/|I_ICIO|.

3. Open drain outputs must be pulled to V_DD

.

6.2.2 LVD and POR operating requirements

Table 11. V_DDsupply LVD and POR operating requirements

Symbol Description

Min.

0.8

Typ.

1.1

Max.

1.5

Unit

V

Notes

V_POR

Falling V_DDPOR detect voltage

V_{POR_VDD_}V_{DD_1P5}POR threshold

1.25

1.31

1.37

V

1P5

V_LVDH

Falling low-voltage detect threshold — high

2.48

2.56

2.64

V

range (LVDV = 01)

Low-voltage warning thresholds — high range

• Level 1 falling (LVWV = 00)

• Level 2 falling (LVWV = 01)

• Level 3 falling (LVWV = 10)

• Level 4 falling (LVWV = 11)

1

V_LVW1H

V_LVW2H

V_LVW3H

V_LVW4H

2.62

2.72

2.82

2.92

2.70

2.80

2.90

3.00

2.78

2.88

2.98

3.08

V

Table continues on the next page...

36

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

Table 11. V_DDsupply LVD and POR operating requirements (continued)

Symbol Description

Min.

Typ.

Max.

Unit

Notes

V_HYSHLow-voltage inhibit reset/recover hysteresis —

—

60

—

mV

high range

V_LVDL

Falling low-voltage detect threshold — low

range (LVDV=00)

1.54

1.60

1.66

V

Low-voltage warning thresholds — low range

• Level 1 falling (LVWV = 00)

1

V_LVW1L

V_LVW2L

V_LVW3L

V_LVW4L

1.74

1.84

1.94

2.04

—

1.80

1.90

2.00

2.10

40

1.86

1.96

2.06

2.16

—

V

• Level 2 falling (LVWV = 01)

• Level 3 falling (LVWV = 10)

V

• Level 4 falling (LVWV = 11)

V

V_HYSL

Low-voltage inhibit reset/recover hysteresis —

low range

mV

V_BG

t_LPO

Bandgap voltage reference

0.97

900

1.00

1.03

V

Internal low-power oscillator period — factory

trimmed

1000

1100

μs

1. Rising thresholds are falling threshold + hysteresis voltage

6.2.3 Voltage and current operating behaviors

Table 12. Voltage and current operating behaviors

Symbol

Description

Min.

Max.

Unit

Notes

1, 2

V_OH

Output high voltage — Normal drive pad (except

RESET_b)

V_DD– 0.5

V_DD– 0.35

—

V

• 2.7 V ≤ V_DD≤ 3.6 V, I_OH= -5 mA

• 1.71 V ≤ V_DD≤ 2.7 V, I_OH= -2.5 mA

• 1.71 V ≤ V_DD≤ 2.7 V, I_OH= -1 mA

V_OH

Output high voltage — High drive pad (except

RESET_b)

1, 2

V_DD– 0.5

—

V

• 2.7 V ≤ V_DD≤ 3.6 V, I_OH= -20 mA

• 1.71 V ≤ V_DD≤ 2.7 V, I_OH= -10 mA

I_OHT

V_OL

Output high current total for all ports

Output low voltage — Normal drive pad

• 2.7 V ≤ V_DD≤ 3.6 V, I_OL= 5 mA

• 1.71 V ≤ V_DD≤ 2.7 V, I_OL= 2.5 mA

100

mA

1

—

0.5

V

V_OL

Output low voltage — High drive pad

—

0.5

V

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

37

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 12. Voltage and current operating behaviors (continued)

Symbol

Description

• 2.7 V ≤ V_DD≤ 3.6 V, I_OL= 20 mA

Min.

Max.

Unit

Notes

—

0.5

V

• 1.71 V ≤ V_DD≤ 2.7 V, I_OL= 10 mA

I_OLT

I_IN

Output low current total for all ports

—

100

500

mA

nA

Input leakage current (per pin) for full temperature

range

3

I_IN

Input leakage current (per pin) at 25 °C

—

0.025

5

μA

3

Input leakage current (total all pins) for full

temperature range

R_PU

Internal pullup resistors

20

50

kΩ

4

1. PTB0-1, PTC1-4, PTC6-7, PTC16-19 I/O have both high drive and normal drive capability selected by the associated

PTx_PCRn[DSE] control bit. All other GPIOs are normal drive only.

2. The reset pin only contains an active pull-up device when configured as the RESET signal or as a GPIO. When

configured as a GPIO output, it acts as a pseudo open drain output.

3. Measured at V_DD= 3.6 V.

4. Measured at V_DDsupply voltage = V_DDmin and V_input= V_SS

.

6.2.4 Power mode transition operating behaviors

All specifications except t_PORand VLLSx→RUN recovery times in the following table

assume this clock configuration:

• CPU and system clocks = 48 MHz

• Bus and flash clock = 24 MHz

• FEI clock mode

POR and VLLSx→RUN recovery use FEI clock mode at the default CPU and system

frequency of 21 MHz, and a bus and flash clock frequency of 10.5 MHz.

Table 13. Power mode transition operating behaviors

Symbol

Description

Max.

Unit

Notes

t_POR

After a POR event, amount of time from the point V_DD

reaches 1.8 V to execution of the first instruction across the

operating temperature range of the chip.

300

μs

1

• VLLS0 → RUN

169.0

168.9

97.3

μs

• VLLS1 → RUN

• VLLS2 → RUN

Table continues on the next page...

38

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

Table 13. Power mode transition operating behaviors (continued)

Symbol

Description

Max.

97.3

6.3

Unit

Notes

• VLLS3 → RUN

μs

• LLS → RUN

• VLPS → RUN

• STOP → RUN

μs

6.2

μs

6.2

μs

1. Normal boot (FTFA_FOPT[LPBOOT]=11). When the DC-DC converter is in bypass mode, TPOR will not meet the 300

µs spec when 1) VDD_1P5 < 1.6 V at 25 °C and 125 °C. 2) 1.5V ≤ VDD_1P5 ≤ 1.8 V. For the bypass mode special

case where VDD_1P5 = VDD_1P8, TPOR did not meet the 300 µs maximum spec when the supply slew rate <=100

V/s.

6.2.5 Power consumption operating behaviors

Table 14. Power consumption operating behaviors - Bypass Mode

Mode#

Symbol

Description

Typ.

Max.

Unit

Notes

1

0

1

I_DDA

Analog supply current

—

See note

mA

I_{DD_RUNCO_CM}Run mode current in compute operation - 48

MHz core / 24 MHz flash / bus disabled,

LPTMR running using LPO clock at 1kHz,

CoreMark benchmark code executing from

flash at 3.0 V

2, 3

6.73

3.84

9.94

6.95

mA

2

3

I_{DD_RUNCO}

Run mode current in compute operation - 48

MHz core / 24 MHz flash / bus clock disabled,

code of while(1) loop executing from flash at

3.0 V

3, 4

2, 3

I_{DD_RUN_CM}Run mode current - 48 MHz core/24 MHz bus

and flash, all peripheral clocks disabled,

CoreMark benchmark code executing from

flash at 3.0 V

6.72

4.46

9.93

7.50

mA

4

5

I_{DD_RUN}

Run mode current - 48 MHz core / 24 MHz bus

and flash, all peripheral clocks disabled, code

of while(1) loop executing from flash at 3.0 V

3, 4

I_{DD_RUN}

Run mode current - 48 MHz core / 24 MHz bus

and flash, all peripheral clocks enabled, code of

while(1) loop executing from flash at 3.0 V

3, 4, 5

5.59

5.72

6.22

6.03

6.96

8.60

mA

at 25 °C

at 70 °C

at 105 °C

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

39

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 14. Power consumption operating behaviors - Bypass Mode (continued)

Mode#

Symbol

Description

Typ.

Max.

Unit

Notes

6

I_{DD_WAIT}

Wait mode current - core disabled / 48 MHz

system / 24 MHz bus / flash disabled (flash

doze enabled), all peripheral clocks disabled at

3.0 V

4

2.48

5.70

mA

7

I_{DD_WAIT}

Wait mode current - core disabled / 24 MHz

system / 24 MHz bus / flash disabled (flash

doze enabled), all peripheral clocks disabled at

3.0 V

4

1.95

5.20

mA

8

9

I_{DD_PSTOP2}Stop mode current with partial stop 2 clocking

option - core and system disabled / 10.5 MHz

bus at 3.0 V

4

6

2.31

5.60

mA

μA

I_{DD_VLPRCO_CM}Very-low-power run mode current in compute

operation - 4 MHz core / 0.8 MHz flash / bus

clock disabled, LPTMR running using LPO

750.90

2162.15

clock at 1 kHz reference clock, CoreMark

benchmark code executing from flash at 3.0 V

10

11

12

13

14

15

I_{DD_VLPRCO}Very-low-power run mode current in compute

operation - 4 MHz core / 0.8 MHz flash / bus

clock disabled, code of while(1) loop executing

from flash at 3.0 V

7

157.56

1197.82

μA

I_{DD_VLPR_CM}Very-low-power run mode current -4 MHz

core/0.8 MHz bus and flash, all peripheral

clocks disabled, CoreMark benchmark code

executing from flash at 3.0 V

749.12

176.75

2169.25

1217.35

μA

I_{DD_VLPR}

I_{DD_VLPW}

I_{DD_STOP}

Very-low-power run mode current - 4 MHz

core / 0.8 MHz bus and flash, all peripheral

clocks disabled, code of while(1) loop

executing from flash at 3.0 V

7

Very-low-power run mode current - 4 MHz

core / 0.8 MHz bus and flash, all peripheral

clocks enabled, code of while(1) loop executing

from flash at 3.0 V

5, 7

7

225.92

115.97

1261.85

988.58

μA

Very-low-power wait mode current - core

disabled / 4 MHz system / 0.8 MHz bus / flash

disabled (flash doze enabled), all peripheral

clocks disabled at 3.0 V

Stop mode current at 3.0 V

at 25 °C

233.19

334.36

714.91

395.00

1238.67

2854.74

μA

at 70 °C

at 105 °C

16

I_{DD_VLPS}

Very-low-power stop mode current at Bypass

mode(3.0 V),

5.99

44.41

181.39

37.86

239.01

740.69

μA

at 25 °C

at 70 °C

at 105 °C

Table continues on the next page...

40

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

Table 14. Power consumption operating behaviors - Bypass Mode (continued)

Mode#

Symbol

Description

Typ.

Max.

Unit

Notes

17

I_{DD_LLS3}

Low-leakage stop mode 3 current at Bypass

mode(3.0 V),

3.04

16.27

61.37

7.96

54.57

185.22

μA

at 25 °C

at 70 °C

at 105 °C

18

19

20

21

I_{DD_LLS2}

Low-leakage stop mode 2 current at Bypass

mode(3.0 V),

2.67

13.39

50.32

6.17

49.00

142.43

μA

at 25 °C

at 70 °C

at 105 °C

I_{DD_VLLS3}

Very-low-leakage stop mode 3 current at

Bypass mode(3.0 V),

2.23

12.14

46.73

5.35

46.10

126.37

μA

at 25 °C

at 70 °C

at 105 °C

I_{DD_VLLS2_16KB}Very-low-leakage stop mode 2 current at

Bypass mode(3.0 V),

1.67

6.58

2.53

25.82

57.92

μA

at 25 °C

at 70 °C

at 105 °C

25.32

I_{DD_VLLS2_32KB}Very-low-leakage stop mode 2 current at

Bypass mode (3.0 V) (set

SMC_STOPCTRL[RAM2PO]=1 based on

IDD_VLLS2_16KB configuration),

1.84

8.10

—

μA

at 25 °C

at 70 °C

29.47

at 105 °C

22

I_{DD_VLLS2_16KB}Very-low-leakage stop mode 2 current at

Bypass mode (3.0 V) (set

_RF_Tx_RAM

RSIM_CONTROL[TXRAMPO]=1 based on

IDD_VLLS2_16KB configuration),

1.75

7.83

—

μA

at 25 °C

at 70 °C

28.32

at 105 °C

23

I_{DD_VLLS2_16KB}Very-low-leakage stop mode 2 current at

Bypass mode (3.0 V) (set

_RF_Rx_RAM

RSIM_CONTROL[RXRAMPO]=1 based on

IDD_VLLS2_16KB configuration),

1.75

7.65

—

μA

at 25 °C

at 70 °C

at 105 °C

27.73

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

41

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 14. Power consumption operating behaviors - Bypass Mode (continued)

Mode#

Symbol

Description

Typ.

Max.

Unit

Notes

24

I_{DD_VLLS1}

Very-low-leakage stop mode 1 current at

Bypass mode(3.0 V),

917.42

3.24

1355.71

13.32

nA

μA

at 25 °C

at 70 °C

at 105 °C

15.62

32.08

25

26

I_{DD_VLLS0}

Very-low-leakage stop mode 0 current

(SMC_STOPCTRL[PORPO] = 0) at 3.0 V

467.55

2.78

998.32

13.05

31.48

nA

μA

at 25 °C

at 70 °C

at 105 °C

15.11

I_{DD_VLLS0}

Very-low-leakage stop mode 0 current

(SMC_STOPCTRL[PORPO] = 1) at 3.0 V

8

266.64

2.54

737.22

13.02

31.12

nA

μA

at 25 °C

at 70 °C

at 105 °C

14.78

1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See

specifications of each module for its supply current.

2. MCG configured for FEI mode. CoreMark benchmark compiled using IAR 7.70 with optimization level high, optimized for

balanced.

3. Radio is off.

4. MCG configured for FEI mode.

5. Incremental current consumption from peripheral activity is not included.

6. MCG configured for BLPI mode. CoreMark benchmark compiled using IAR 7.70 with optimization level high, optimized

for balanced.

7. MCG configured for BLPI mode.

8. No brownout.

Table 15. Power consumption operating behaviors - Buck Mode

Mode#

Symbol

Description

Typ.

Max.

Unit

Notes

1

0

1

I_DDA

Analog supply current

—

See note

mA

I_{DD_RUNCO_CM}Run mode current in compute operation - 48

MHz core / 24 MHz flash / bus clock disabled,

LPTMR running using LPO clock at 1 kHz,

CoreMark benchmark code executing from flash

at 3.0 V

2, 3

4.97

3.13

—

mA

2

3

I_{DD_RUNCO}Run mode current in compute operation - 48

MHz core / 24 MHz flash / bus clock disabled,

code of while(1) loop executing from flash at 3.0

V

2, 3

I_{DD_RUN_CM}Run mode current - 48 MHz core/24 MHz bus

and flash, all peripheral clocks disabled,

CoreMark benchmark code executing from flash

at 3.0 V

4.88

—

mA

Table continues on the next page...

42

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

Table 15. Power consumption operating behaviors - Buck Mode (continued)

Mode#

Symbol

Description

Typ.

Max.

Unit

Notes

4

I_{DD_RUN}

Run mode current - 48 MHz core / 24 MHz bus

and flash, all peripheral clocks disabled, code of

while(1) loop executing from flash at 3.0 V

2, 3

3.37

—

mA

5

I_{DD_RUN}

Run mode current - 48 MHz core / 24 MHz bus

and flash, all peripheral clocks enabled, code of

while(1) loop executing from flash at 3.0 V

2, 3, 4

4.09

4.22

4.60

—

mA

at 25 °C

at 70 °C

at 105 °C

6

7

8

9

I_{DD_WAIT}

Wait mode current - core disabled / 48 MHz

system / 24 MHz bus / flash disabled (flash doze

enabled), all peripheral clocks disabled at 3.0 V

2

5

2.36

2.09

2.32

—

mA

I_{DD_WAIT}

Wait mode current - core disabled / 24 MHz

system / 24 MHz bus / flash disabled (flash doze

enabled), all peripheral clocks disabled at 3.0 V

I_{DD_PSTOP2}Stop mode current with partial stop 2 clocking

option - core and system disabled / 10.5 MHz

bus at 3.0 V

I_{DD_VLPRCO_C}Very-low-power run mode current in compute

operation - 4 MHz core / 0.8 MHz flash / bus

M

clock disabled, CoreMark benchmark code

executing from flash at 3.0 V

563.18

152.88

—

μA

10

11

12

13

14

15

I_{DD_VLPRCO}Very-low-power run mode current in compute

operation - 4 MHz core / 0.8 MHz flash / bus

clock disabled, code of while(1) loop executing

from flash at 3.0 V

5

I_{DD_VLPR_CM}Very-low-power run mode current - 4 MHz

core/0.8 MHz bus and flash, all peripheral clocks

disabled, CoreMark benchmark code executing

from flash at 3.0 V

558.88

150.33

—

μA

I_{DD_VLPR}

I_{DD_VLPW}

I_{DD_STOP}

Very-low-power run mode current - 4 MHz core /

0.8 MHz bus and flash, all peripheral clocks

disabled, code of while(1) loop executing from

flash at 3.0 V

5

Very-low-power run mode current - 4 MHz core /

0.8 MHz bus and flash, all peripheral clocks

enabled, code of while(1) loop executing from

flash at 3.0 V

4, 5

5

207.02

113.53

—

μA

Very-low-power wait mode current - core

disabled / 4 MHz system / 0.8 MHz bus / flash

disabled (flash doze enabled), all peripheral

clocks disabled at 3.0 V

Stop mode current at 3.0 V

at 25 °C

1.65

1.82

2.15

2.712

4.728

7.686

mA

at 70 °C

at 105 °C

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

43

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 15. Power consumption operating behaviors - Buck Mode (continued)

Mode#

Symbol

Description

Typ.

Max.

Unit

Notes

16

I_{DD_VLPS}

Very-low-power stop mode current at Buck

mode(3.0 V),

7.34

58.34

276.96

39.203

252.935

836.252

μA

at 25 °C

at 70 °C

at 105 °C

17

18

19

20

21

I_{DD_LLS3}

I_{DD_LLS2}

I_{DD_VLLS3}

Low-leakage stop mode 3 current at Buck

mode(3.0 V),

2.95

20.42

86.84

7.547

58.722

210.696

μA

at 25 °C

at 70 °C

at 105 °C

Low-leakage stop mode 2 current at Buck

mode(3.0 V),

2.61

13.90

47.87

5.975

49.512

139.983

μA

at 25 °C

at 70 °C

at 105 °C

Very-low-leakage stop mode 3 current at Buck

mode(3.0 V),

2.17

11.14

40.37

5.283

45.099

120.006

μA

at 25 °C

at 70 °C

at 105 °C

I_{DD_VLLS2_16KB}Very-low-leakage stop mode 2 current at Buck

mode(3.0 V),

1.41

5.69

2.236

24.923

53.843

μA

at 25 °C

at 70 °C

at 105 °C

21.24

I_{DD_VLLS2_32KB}Very-low-leakage stop mode 2 current at Buck

mode (3.0 V) (set

SMC_STOPCTRL[RAM2PO]=1 based on

IDD_VLLS2_16KB configuration),

1.85

7.92

—

μA

at 25 °C

at 70 °C

28.84

at 105 °C

22

I_{DD_VLLS2_16KB}Very-low-leakage stop mode 2 current at Buck

mode (3.0 V) (set

_RF_Tx_RAM

RSIM_CONTROL[TXRAMPO]=1 based on

IDD_VLLS2_16KB configuration),

1.68

7.56

—

μA

at 25 °C

at 70 °C

at 105 °C

27.97

Table continues on the next page...

44

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

Table 15. Power consumption operating behaviors - Buck Mode (continued)

Mode#

Symbol

Description

Typ.

Max.

Unit

Notes

23

I_{DD_VLLS2_16KB}Very-low-leakage stop mode 2 current at Buck

mode (3.0 V) (set

_RF_Rx_RAM

RSIM_CONTROL[RXRAMPO]=1 based on

IDD_VLLS2_16KB configuration),

1.91

6.81

—

μA

at 25 °C

at 70 °C

at 105 °C

25.64

24

I_{DD_VLLS1}

Very-low-leakage stop mode 1 current at Buck

mode(3.0 V),

976.17

2.98

1414.459

13.053

nA

μA

at 25 °C

at 70 °C

at 105 °C

13.18

29.640

1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device.

See specification of each module for its supply current.

2. MCG configured for FEI mode.

3. Radio is off.

4. Incremental current consumption from peripheral activity is not included.

5. MCG configured for BLPI mode.

Table 16. Low power mode peripheral adders — typical value (Bypass Mode)

Adder#

Symbol

Description

Temperature (°C)

25 50 70

Unit

–40

85

1

I_IREFSTEN4MHz4 MHz internal reference clock (IRC)

adder. Measured by entering STOP or

47.50 47.50 47.51 47.39 47.12

µA

VLPS mode with 4 MHz IRC enabled.

2

3

I_{IREFSTEN32KHz}32 kHz internal reference clock (IRC)

adder. Measured by entering STOP

92.82 92.82 92.61 91.89 91.91

µA

mode with the 32 kHz IRC enabled.

I_{EREFSTEN32KHz}External 32 kHz crystal clock adder by

means of the RTC bits. Measured by

entering all modes with the crystal

enabled.

1.24

1.23

1.22

1.21

1.23

1.22

1.21

1.25

1.23

1.12

1.22

1.29

1.16

1.28

1.32

1.25

1.26

1.21

1.30

1.26

VLLS1

VLLS2

VLLS3

LLS2

μA

µA

LLS3

4

I_CMP

CMP peripheral adder measured by

placing the device in VLLS1 mode with

CMP enabled using the 6-bit DAC and

a single external input for compare.

Includes 6-bit DAC power

21.15 21.15 21.39 21.55 21.76

consumption.

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

45

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 16. Low power mode peripheral adders — typical value (Bypass Mode) (continued)

Adder#

Symbol

Description

Temperature (°C)

Unit

–40

25

1.24

50

70

1.32

85

5

I_RTC

RTC peripheral adder measured by

placing the device in VLLS1 mode with

external 32 kHz crystal enabled by

means of the RTC_CR[OSCE] bit and

the RTC ALARM set for 1 minute.

Includes ERCLK32K (32 kHz external

crystal) power consumption.

1.25

1.31

µA

6

7

8

I_LPUART

I_LPTMR

I_TPM

LPUART peripheral adder measured

by placing the device in STOP or

VLPS mode with selected clock source

waiting for Rx data at 115200 baud

rate. Includes selected clock source

power consumption.

58.73 58.73 59.13 59.32 59.67

µA

MCGIRCLK (4 MHz internal reference

clock)

LPTMR peripheral adder measured by

placing the device in VLLS1 mode with

LPTMR enabled using LPO.

31.32 31.30 34.49 65.73 100.58 nA

TPM peripheral adder measured by

placing the device in STOP or VLPS

mode with selected clock source

configured for output compare

generating 100 Hz clock signal. No

load is placed on the I/O generating

the clock signal. Includes selected

clock source and I/O switching

currents.

56.93 56.92 56.99 56.92 56.84

90.49 90.48 91.85 91.74 88.16

µA

MCGIRCLK (4 MHz internal reference

clock)

9

I_BG

Bandgap adder when BGEN bit is set

and device is placed in VLPx, LLS, or

VLLSx mode.

10

I_ADC

ADC peripheral adder combining the

measured values at V_DDand V_DDAby

placing the device in STOP or VLPS

mode. ADC is configured for low-

power mode using the internal clock

and continuous conversions.

347.96 347.96 346.12 347.88 346.43 µA

46

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

6.2.6 Diagram: Typical IDD_RUN operating behavior

The following data is measured from previous devices with same MCU core (Arm®

Cortex-M0+) under these conditions:

• No GPIOs toggled

• Code execution from flash with cache enabled

• For the ALLOFF curve, all peripheral clocks are disabled except FTFA

NOTE

The results in the following graphs are obtained using the

device in Bypass mode.

Figure 7. Run mode supply current vs. core frequency

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

47

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Figure 8. VLPR mode current vs. core frequency

6.2.7 SoC Power Consumption

Full KW39/38/37 system-on-chip (SoC) power consumption is a function of the many

configurations possible for the MCU platform and its peripherals including the 2.4 GHz

radio and the DC-DC converter. A few measured SoC configurations are as follows:

Table 17. SoC Power Consumption

MCU State

Flash State

Radio State

DC-DC State

Typical

Average IC

current

Unit

STOP

Doze

Rx

Buck (V_{DCDC_IN}=3.6 V)

8.5

7.8

9.2

mA

Tx (at 0 dBm)

Tx (at +3.5

dBm)

STOP

RUN

Doze

Tx (at +5 dBm)¹

Buck (V_{DCDC_IN}=3.6 V)

10.3

10.4

9.9

mA

Enabled

Rx

Tx (at 0 dBm)

Table continues on the next page...

48

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

Table 17. SoC Power Consumption (continued)

MCU State

Flash State

Radio State

DC-DC State

Typical

Average IC

current

Unit

RUN

Enabled

Tx (at +3.5

dBm)

Buck (V_{DCDC_IN}=3.6 V)

11.7

mA

RUN

STOP

Enabled

Doze

Tx (at +5 dBm)¹

Buck (V_{DCDC_IN}=3.6 V)

Disabled/Bypass

12.8

17.3

15.9

18.3

mA

Rx

Doze

Tx (at 0 dBm)

Doze

Tx (at +3.5

dBm)

STOP

RUN

Doze

Tx (at +5 dBm)¹

Disabled/Bypass

20.3

21.5

19.9

22.4

mA

Enabled

Rx

Tx (at 0 dBm)

Tx (at +3.5

dBm)

RUN

Enabled

Tx (at +5 dBm)¹

Disabled/Bypass

24.4

mA

1. MCU configured to use an FLL-based 20 MHz clock.

6.2.8 Designing with radiated emissions in mind

To find application notes that provide guidance on designing your system to minimize

interference from radiated emissions:

1. Go to www.nxp.com

2. Perform a keyword search for “KW38, HW guideline, RF system evaluation.”

6.2.9 Capacitance attributes

Table 18. Capacitance attributes

Symbol

Description

Min.

Max.

Unit

C_IN

Input capacitance

—

7

pF

6.3 Switching electrical specifications

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

49

NXP Semiconductors

KW39/38/37 Electrical Characteristics

6.3.1 Device clock specifications

Table 19. Device clock specifications

Symbol

Description

Min.

Max.

Unit

Normal run mode

f_SYS

f_BUS

f_FLASH

f_LPTMR

System and core clock

Bus clock

—

48

24

MHz

Flash clock

LPTMR clock

VLPR and VLPS modes¹

f_SYS

f_BUS

System and core clock

Bus clock

—

4

1

MHz

f_FLASH

f_LPTMR

f_ERCLK

Flash clock

LPTMR clock²

1

24

16

8

External reference clock

f_{LPTMR_ERCLK}LPTMR external reference clock

f_TPM

TPM asynchronous clock

f_LPUART0

LPUART0 asynchronous clock

12

1. The frequency limitations in VLPR and VLPS modes here override any frequency specification listed in the timing

specification for any other module. These same frequency limits apply to VLPS, whether VLPS entered from RUN or

from VLPR.

2. The LPTMR can be clocked at this speed in VLPR or VLPS only when the source is an external pin.

6.3.2 General switching specifications

These general-purpose specifications apply to all signals configured for GPIO,

LPUART, CAN (for KW38 only), CMT and I²C signals.

Table 20. General switching specifications

Description

Min.

Max.

Unit

Notes

GPIO pin interrupt pulse width (digital glitch filter disabled)

— Synchronous path

1.5

—

Bus clock cycles

1, 2

NMI_b pin interrupt pulse width (analog filter enabled) —

Asynchronous path

200

20

—

ns

3

GPIO pin interrupt pulse width (digital glitch filter disabled,

analog filter disabled) — Asynchronous path

External RESET_b input pulse width (digital glitch filter

disabled)

100

Port rise and fall time(high drive strength)

• Slew enabled

4, 5

—

25

16

ns

Table continues on the next page...

50

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 20. General switching specifications (continued)

Description

• 1.71 ≤ VDD ≤ 2.7 V

• 2.7 ≤ VDD ≤ 3.6 V

• Slew disabled

Min.

Max.

Unit

Notes

—

8

ns

—

6

ns

• 1.71 ≤ VDD ≤ 2.7 V

• 2.7 ≤ VDD ≤ 3.6 V

Port rise and fall time(low drive strength)

6, 7

• Slew enabled

• 1.71 ≤ VDD ≤ 2.7 V

• 2.7 ≤ VDD ≤ 3.6 V

• Slew disabled

—

24

16

10

6

ns

• 1.71 ≤ VDD ≤ 2.7 V

• 2.7 ≤ VDD ≤ 3.6 V

—

ns

1. This is the minimum pulse width that guarantees to pass through the pin synchronization circuitry in run modes.

2. The greater of synchronous and asynchronous timing must be met.

3. This is the minimum pulse width that guarantees to be recognized.

4. PTB0, PTB1, PTC1, PTC2, PTC3, PTC4, PTC6, PTC7, PTC16, PTC17, PTC18, PTC19.

5. 75 pF load.

6. Ports A, B, and C.

7. 25 pF load.

6.4 Thermal specifications

6.4.1 Thermal operating requirements

Table 21. Thermal operating requirements

Symbol

T_J

Description

Min.

–40

Max.

125

Unit

°C

Notes

Die junction temperature

Ambient temperature

T_A

105

°C

1

1. Maximum T_Acan be exceeded only if the user ensures that T_Jdoes not exceed the maximum. The simplest method to

determine T_Jis: T_J= T_A+ R_θJA× chip power dissipation.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

51

NXP Semiconductors

KW39/38/37 Electrical Characteristics

6.4.2 Thermal attributes

Table 22. Thermal attributes

Board type

Symbol

Description

48-pin

"Wettable"

HVQFN

Unit

Notes

Four-layer (2s2p)

—

R_θJA

Thermal resistance, junction to

ambient (natural convection)

21.4

°C/W

1, 2

1, 3

Ψ_JT

Thermal characterization parameter,

junction to package top (natural

convection)

0.2

1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site

(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board

construction.

2. Determined according to JEDEC Standard JESD51-2A.

3. Thermal characterization parameter indicating the temperature difference between the package top and the junction

temperature per JEDEC JESD51-2A.

The thermal characterization parameter (Ψ_JT) is used to determine the junction

temperature with a measurement of the temperature at the top of the package case using

the following equation:

T_J= T_T+ Ψ_JTx chip power dissipation

where T_Tis the thermocouple temperature at the top of the package.

6.5 Peripheral operating requirements and behaviors

6.5.1 Core modules

6.5.1.1 SWD electricals

Table 23. SWD full voltage range electricals

Symbol

Description

Min.

Max.

Unit

Operating voltage

1.71

3.6

V

J1

SWD_CLK frequency of operation

• Serial wire debug

0

25

—

MHz

ns

J2

J3

SWD_CLK cycle period

SWD_CLK clock pulse width

• Serial wire debug

1/J1

20

—

3

ns

J4

SWD_CLK rise and fall times

Table continues on the next page...

52

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

Table 23. SWD full voltage range electricals (continued)

Symbol

J9

Description

SWD_DIO input data setup time to SWD_CLK rise

Min.

10

Max.

Unit

ns

—

J10

SWD_DIO input data hold time after SWD_CLK rise

SWD_CLK high to SWD_DIO data valid

SWD_CLK high to SWD_DIO high-Z

0

—

5

—

32

—

ns

J11

ns

J12

ns

J2

J4

J3

SWD_CLK (input)

J4

Figure 9. Serial wire clock input timing

SWD_CLK

SWD_DIO

J9

J10

Input data valid

J11

Output data valid

J12

J11

Output data valid

Figure 10. Serial wire data timing

6.5.2 System modules

There are no specifications necessary for the device's system modules.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

53

NXP Semiconductors

KW39/38/37 Electrical Characteristics

6.5.3 Clock modules

6.5.3.1 MCG specifications

Table 24. MCG specifications

Symbol Description

Min.

Typ.

Max.

Unit

Notes

f_{ints_ft}Internal reference frequency (slow clock) —

—

32.768

—

kHz

factory trimmed at nominal V_DDand 25 °C

f_{ints_t}

Internal reference frequency (slow clock) —

user trimmed

31.25

—

39.0625

0.6

kHz

Δ_{fdco_res_t}Resolution of trimmed average DCO output

frequency at fixed voltage and temperature —

using C3[SCTRIM] and C4[SCFTRIM]

0.3

%f_dco

1

Δf_{dco_t}

Total deviation of trimmed average DCO output

frequency over voltage and temperature

—

+0.5/–0.7

0.4

3

%f_dco

1, 2

Δf_{dco_t}

Total deviation of trimmed average DCO output

frequency over fixed voltage and temperature

range of 0–70 °C

1.5

f_{intf_ft}

Internal reference frequency (fast clock) —

factory trimmed at nominal V_DDand 25 °C

—

4

—

MHz

Δf_{intf_ft}

Frequency deviation of internal reference clock

(fast clock) over temperature and voltage —

factory trimmed at nominal V_DDand 25 °C

+1/–2

11

%f_{intf_ft}

2

f_{intf_t}

Internal reference frequency (fast clock) — user

trimmed at nominal V_DDand 25 °C

3

—

5

MHz

kHz

f_{loc_low}

Loss of external clock minimum frequency —

RANGE = 00

(3/5) x

f_{ints_t}

—

f_{loc_high}Loss of external clock minimum frequency —

RANGE = 01, 10, or 11

(16/5) x

f_{ints_t}

FLL

FLL reference frequency range

31.25

20

—

39.0625

25

kHz

f_{fll_ref}

f_dco

DCO output

Low range (DRS = 00)

20.97

MHz

3, 4

5, 6

frequency range

640 × f_{fll_ref}

Mid range (DRS = 01)

1280 × f_{fll_ref}

40

—

41.94

23.99

47.97

180

48

—

1

MHz

ps

f_{dco_t_DMX3}DCO output

Low range (DRS = 00)

732 × f_{fll_ref}

frequency

2

Mid range (DRS = 01)

1464 × f_{fll_ref}

J_{cyc_fll}

FLL period jitter

• f_VCO= 48 MHz

7

8

t_{fll_acquire}FLL target frequency acquisition time

—

ms

54

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock

mode).

2. The deviation is relative to the factory trimmed frequency at nominal V_DDand 25 °C, f_{ints_ft}

.

3. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 0.

4. The resulting system clock frequencies must not exceed their maximum specified values. The DCO frequency

deviation (Δf_{dco_t}) over voltage and temperature must be considered.

5. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 1.

6. The resulting clock frequency must not exceed the maximum specified clock frequency of the device.

7. This specification is based on standard deviation (RMS) of period or frequency.

8. This specification applies to any time the following changes: FLL reference source or reference divider, trim value,

DMX32 bit, DRS bits, or FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is

used as the reference, this specification assumes it is already running.

6.5.3.2 Reference Oscillator Specification

The KW39/38/37 has been designed to meet targeted standard specifications for

frequency error over the life of the part, which includes the temperature, mechanical

and aging effects.

The table below lists the recommended crystal specifications. Note that these are

recommendations only and deviation may be allowed. However, deviations may result

in degraded RF performance or possibly a failure to meet RF protocol certification

standards. Designers must ensure that the crystal(s) they use meet the requirements of

their application.

Table 25. Recommended Crystal and Oscillator Specification

Symbol

Description

F0 = 32.0 MHz

F0 = 26.0 MHz

Unit

Notes

Min

Typ

Max

Min

Typ

Max

T_A

Operating

–40

—

105

–40

—

105

°C

1

Temperature

Crystal initial

frequency

tolerance

–10

—

10

25

–10

–25

—

10

24

ppm

2,3

2,4

Crystal frequency –25

stability and aging

—

ppm

Oscillator variation –12

—

15

50

–12

–50

—

16

50

ppm

5

6

Total reference

oscillator tolerance

for Bluetooth LE

applications

–50

C_L

Load capacitance

7

10

13

7

10

13

pF

fF

2, 7

2,7

C₀

Shunt capacitance 0.469

0.67

2.05

0.871

2.665

0.42

1.435

0.6

2.05

0.78

2.665

Cm1

Motional

1.435

capacitance

Lm1

Motional

8.47

12.1

15.73

12.81

18.3

23.79

mH

2,7

inductance

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

55

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 25. Recommended Crystal and Oscillator Specification (continued)

Symbol

Description

F0 = 32.0 MHz

F0 = 26.0 MHz

Unit

Notes

Min

Typ

Max

Min

Typ

Max

Rm1

ESR

P_d

Motional

resistance

—

25

50

—

35

—

10

50

Ohms

uW

2

Equivalent series

resistance

—

60

—

60

2,8

2

Maximum crystal

drive

10

200

T_S

Trim sensitivity

6.30

—

9.00

500

11.70

—

6.39

—

9.12

500

11.86

—

ppm/pF 2,7

μs

T_OSC

Oscillator Startup

Time

9

1. Full temperature range of this device. A reduced range can be chosen to meet application needs.

2. Recommended crystal specification.

3. Measured at 25 °C.

4. Combination of frequency stability variation over desired temperature range and frequency variation due to aging over

desired lifetime of system.

5. Variation due to temperature, process, and aging of MCU.

6. Sum of crystal initial frequency tolerance, crystal frequency stability and aging, oscillator variation, and PCB

manufacturing variation must not exceed this value.

7. Typical is target. 30% tolerances shown.

8. ESR = Rm1 * (1 + [C₀/C_L])^2.

9. Time from oscillator enable to clock ready. Dependent on the complete hardware configuration of the oscillator.

Figure 11. Crystal Electrical Model

56

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

KW39/38/37 Electrical Characteristics

6.5.3.3 32 kHz Oscillator Frequency Specifications

Table 26. 32 kHz Crystal and Oscillator Specifications

Symbol

Description

Min.

Typ.

Max.

Unit

Notes

f_{osc_lo}

Crystal

—

32.768

—

kHz

frequency

T_A

Operating

temperature

–40

—

105

500

°C

1

Total crystal

frequency

tolerance

–500

ppm

2,3

C_L

Load

capacitance

—

12.5

—

pF

2

ESR

Equivalent

series

80

kOhms

resistance

t_start

Crystal start-up

time

—

1000

32.768

—

ms

kHz

V

4

5

6

f_{ec_extal32}

v_{ec_extal32}

External input

clock frequency

—

External input

0.7

V_DD

clock amplitude

1. Full temperature range of this device. A reduced range can be chosen to meet application needs.

2. Recommended crystal specification.

3. Sum of crystal initial frequency tolerance, crystal frequency stability, and aging tolerances given by crystal vendor.

4. Time from oscillator enable to clock stable. Dependent on the complete hardware configuration of the oscillator.

5. External oscillator connected to EXTAL32K. XTAL32K must be unconnected.

6. The parameter specified is a peak-to-peak value and V_IHand V_ILspecifications do not apply. The voltage of the

applied clock must be within the range of VSS to VDD.

6.5.4 Memories and memory interfaces

6.5.4.1 Flash (FTFE) electrical specifications

This section describes the electrical characteristics of the FTFE module.

6.5.4.1.1 Flash timing specifications — commands

Table 27. Flash command timing specifications

Symbol Description1

Read 1s Block execution time

• 256 KB program/data flash

Min.

Typ.

Max.

Unit

Notes

t_rd1blk256k

—

2

ms

t_rd1sec2kRead 1s Section execution time (2 KB flash)

t_pgmchkProgram Check execution time

—

75

95

μs

Table continues on the next page...

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

57

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 27. Flash command timing specifications (continued)

Symbol Description1

t_rdrsrcRead Resource execution time

t_pgm8

Min.

—

Typ.

—

Max.

40

Unit

μs

Notes

Program Phrase execution time

Erase Flash Block execution time

• 256 KB program/data flash

—

90

225

μs

2

t_ersblk256k

t_ersscr

—

125

2125

ms

Erase Flash Sector execution time

—

12

10

130

—

ms

t_pgmsec2kProgram Section execution time (2 KB flash)

Read 1s All Blocks execution time

t_rd1allx

t_rd1alln

• FlexNVM devices

—

3.5

ms

• Program flash only devices

t_rdonce

Read Once execution time

—

90

30

—

μs

t_pgmonceProgram Once execution time

t_ersall

t_vfykey

t_ersallu

Erase All Blocks execution time

Verify Backdoor Access Key execution time

Erase All Blocks Unsecure execution time

Swap Control execution time

• control code 0x01

262

—

4380

35

ms

μs

2

262

4380

ms

t_swapx01

t_swapx02

t_swapx04

t_swapx08

t_swapx10

—

280

100

—

μs

• control code 0x02

235

35

• control code 0x04

• control code 0x08

• control code 0x10

100

235

Program Partition for EEPROM execution time

• 32 KB EEPROM backup

t_pgmpart32k

t_pgmpart256k

—

252

262

—

ms

• 256 KB EEPROM backup

Set FlexRAM Function execution time:

• Control Code 0xFF

t_setramff

t_setram32k

t_setram256k

—

115

0.8

—

μs

ms

• 32 KB EEPROM backup

• 256 KB EEPROM backup

1.2

4.5

6.1

Byte-write to FlexRAM execution time:

• 32 KB EEPROM backup

3

t_eewr8b32k

—

385

1700

3800

μs

t_eewr8b256k

• 256 KB EEPROM backup

1015

16-bit write to FlexRAM execution time:

• 32 KB EEPROM backup

t_eewr16b32k

t_eewr16b256k

—

385

1700

μs

• 256 KB EEPROM backup

1015

360

3800

2000

t_eewr32bers32-bit write to erased FlexRAM location

execution time

—

μs

Table continues on the next page...

58

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

KW39/38/37 Electrical Characteristics

Table 27. Flash command timing specifications (continued)

Symbol Description1

32-bit write to FlexRAM execution time:

Min.

Typ.

Max.

Unit

Notes

3

t_eewr32b32k

t_eewr32b256k

• 32 KB EEPROM backup

• 256 KB EEPROM backup

—

630

2000

4100

μs

1890

1. All command times assume 25 MHz or greater flash clock frequency (for synchronization time between internal/

external clocks).

2. Maximum times for erase parameters based on expectations at cycling end-of-life.

3. First time EERAM writes after a Reset or SETRAM command may incur additional overhead for EEE cleanup,

resulting in up to 2x the times shown.

NOTE

Under certain circumstances maximum times for writes to

FlexRAM may be exceeded. In this case the user or

application may wait, or assert reset to the FTFE module to

stop the operation.

6.5.4.1.2 Reliability specifications (Automotive)

Table 28. NVM reliability specifications

Symbol Description

Min.

Typ.

Max.

Unit

Notes

Program and Data Flash

t_nvmret1kData retention after up to 1 K cycles

n_nvmcycCycling endurance

20

—

years

1

2

1 K

cycles

FlexRAM as Emulated EEPROM

5

t_nvmreteeData retention

Write endurance

n_nvmwree16

—

years

1, 3

4, 5, 6

• EEPROM backup to FlexRAM used ratio =

100 K

1.6 M

—

writes

16

n_nvmwree256

• EEPROM backup to FlexRAM used ratio =

256

1. Data retention period per block begins upon initial user factory programming or after each subsequent erase.

2. Program and Erase are supported across product temperature specification. Cycling endurance is per flash sector.

3. Background maintenance operations during normal FlexRAM usage extend effective data retention life beyond 5

years.

4. FlexMemory write endurance specified for 16-bit and/or 32-bit writes to FlexRAM and is supported across product

temperature specification. Greater write endurance may be achieved with larger ratios of EEPROM backup to

FlexRAM.

5. For usage of any EEE driver other than the FlexMemory feature, the endurance specification falls back to the Data

Flash endurance value of 1 K.

6. FlexMemory calculator tool is available on the NXP web site for help in estimating the maximum write endurance

achievable at specific EEPROM/FlexRAM ratios. The "In Spec" portions of the online calculator refer to the NVM

reliability specifications section of the data sheet. This calculator only applies to the Kinetis FlexMemory feature.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

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KW39/38/37 Electrical Characteristics

6.5.4.1.3 Reliability specifications (Industrial)

Table 29. NVM reliability specifications

Symbol Description

Min.

Typ.¹

Max.

Unit

Notes

Program Flash

t_nvmretp10kData retention after up to 10 K cycles

t_nvmretp1kData retention after up to 1 K cycles

n_nvmcycpCycling endurance

5

50

—

years

cycles

20

100

50 K

10 K

2

Data Flash

t_nvmretd10kData retention after up to 10 K cycles

t_nvmretd1kData retention after up to 1 K cycles

n_nvmcycdCycling endurance

5

50

—

years

cycles

20

100

50 K

10 K

FlexRAM as EEPROM

t_nvmretee100Data retention up to 100% of write endurance

t_nvmretee10Data retention up to 10% of write endurance

n_nvmcyceeCycling endurance for EEPROM backup

Write endurance

5

50

—

years

cycles

20

100

50 K

20 K

2

3

n_nvmwree16

n_nvmwree128

n_nvmwree512

n_nvmwree2k

• EEPROM backup to FlexRAM ratio = 16

• EEPROM backup to FlexRAM ratio = 128

• EEPROM backup to FlexRAM ratio = 512

• EEPROM backup to FlexRAM ratio = 2,048

140 K

1.26 M

5 M

400 K

3.2 M

12.8 M

50 M

—

writes

20 M

1. Typical data retention values are based on measured response accelerated at high temperature and derated to a

constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in

Engineering Bulletin EB619.

2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ T_j≤ 125 °C.

3. Write endurance represents the number of writes to each FlexRAM location at -40 °C ≤Tj ≤ 125 °C influenced by the

cycling endurance of the FlexNVM and the allocated EEPROM backup. Minimum and typical values assume all 16-bit or

32-bit writes to FlexRAM; all 8-bit writes result in 50% less endurance.

6.5.4.1.4 Write endurance to FlexRAM for EEPROM

When the FlexNVM partition code is not set to full data flash, the EEPROM data set

size can be set to any of several non-zero values.

The bytes not assigned to data flash via the FlexNVM partition code are used by the

FTFE to obtain an effective endurance increase for the EEPROM data. The built-in

EEPROM record management system raises the number of program/erase cycles that

can be attained prior to device wear-out by cycling the EEPROM data through a larger

EEPROM NVM storage space.

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KW39/38/37 Electrical Characteristics

While different partitions of the FlexNVM are available, the intention is that a single

choice for the FlexNVM partition code and EEPROM data set size is used throughout

the entire lifetime of a given application.

6.5.5 Security and integrity modules

There are no specifications necessary for the device's security and integrity modules.

6.5.6 Analog

6.5.6.1 ADC electrical specifications

All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy

specifications. The following specification is defined with the DC-DC converter

operating in Bypass mode.

6.5.6.1.1 16-bit ADC operating conditions

Table 30. 16-bit ADC operating conditions

Symbol Description

V_DDASupply voltage

ΔV_DDASupply voltage

Conditions

Min.

1.71

–100

1.13

Typ.¹

Max.

3.6

Unit

V

Notes

Absolute

—

Delta to V_DD(V_DD– V_DDA

)

0

+100

V_DDA

mV

V

2

3

ΔV_SSA

Ground voltage Delta to V_SS(V_SS– V_SSA

)

0

V_REFH

ADC reference

voltage high

V_DDA

V_REFL

V_ADIN

ADC reference

voltage low

V_SSA

V

3

Input voltage

• 16-bit differential mode

• All other modes

• 16-bit mode

VSSA

—

31/32 ×

VREFH

C_ADIN

Input

capacitance

—

8

4

10

5

pF

kΩ

• 8-bit / 10-bit / 12-bit

modes

R_ADIN

R_AS

Input series

resistance

—

2

5

Analog source

resistance

(external)

13-bit / 12-bit modes

f_ADCK< 4 MHz

4

5

—

5

kΩ

f_ADCK

ADC conversion ≤ 13-bit mode

clock frequency

1.0

18.0

MHz

Table continues on the next page...

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KW39/38/37 Electrical Characteristics

Table 30. 16-bit ADC operating conditions (continued)

Symbol Description

Conditions

Min.

Typ.¹

Max.

Unit

Notes

f_ADCK

ADC conversion 16-bit mode

clock frequency

2.0

—

12.0

MHz

5

C_rate

ADC conversion ≤ 13-bit modes

rate

6

No ADC hardware averaging

20.000

37.037

—

818.330

461.467

kS/s

Continuous conversions

enabled, subsequent

conversion time

C_rate

ADC conversion 16-bit mode

6

rate

No ADC hardware averaging

Continuous conversions

enabled, subsequent

conversion time

1. Typical values assume V_DDA= 3.0 V, Temp = 25 °C, f_ADCK= 1.0 MHz, unless otherwise stated. Typical values are for

reference only, and are not tested in production.

2. DC potential difference.

3. For packages without dedicated VREFH and VREFL pins, V_REFHis internally tied to V_DDA, and V_REFLis internally tied to

V_SSA

.

4. This resistance is external to MCU. To achieve the best results, the analog source resistance must be kept as low as

possible. The results in this data sheet are derived from a system that had < 8 Ω analog source resistance. The R_AS/C_AS

time constant should be kept to < 1 ns.

5. To use the maximum ADC conversion clock frequency, CFG2[ADHSC] must be set and CFG1[ADLPC] must be clear.

6. For guidelines and examples of conversion rate calculation, download the ADC calculator tool.

SIMPLIFIED

INPUT PIN EQUIVALENT

ZADIN

CIRCUIT

SIMPLIFIED

CHANNEL SELECT

CIRCUIT

Pad

leakage

ZAS

ADC SAR

ENGINE

RAS

RADIN

VADIN

CAS

VAS

RADIN

INPUT PIN

CADIN

Figure 12. ADC input impedance equivalency diagram

62

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

KW39/38/37 Electrical Characteristics

6.5.6.1.2 16-bit ADC electrical characteristics

Table 31. 16-bit ADC characteristics (V_REFH= V_DDA, V_REFL= V_SSA

)

Symbol Description

Conditions¹

Min.

0.215

1.2

Typ.²

Max.

1.7

3.9

6.1

7.3

9.5

Unit

Notes

I_{DDA_ADC}Supply current

—

mA

3

ADC asynchronous

clock source

• ADLPC=1, ADHSC=0

• ADLPC=1, ADHSC=1

• ADLPC=0, ADHSC=0

• ADLPC=0, ADHSC=1

2.4

4.0

5.2

6.2

MHz t_ADACK=

1/f_ADACK

2.4

f_ADACK

3.0

4.4

Sample Time

See Reference Manual chapter for sample times

TUE Total unadjusted

error

• 12-bit modes

• <12-bit modes

—

4

6.8

2.1

LSB⁴

5

1.4

DNL Differential non-

linearity

• 12-bit mode; Buck

Mode⁶

• 12-bit mode; Bypass

Mode

—

0.7

0.5

–1.1 to +1.9

INL

Integral non-

linearity

• 12-bit mode; Buck

Mode⁶

• 12-bit mode; Bypass

Mode

—

1.0

0.6

–2.7 to +1.9

LSB⁴

5

E_FS

E_Q

Full-scale error

• 12-bit modes

• <12-bit modes

• 16-bit modes

• ≤13-bit modes

—

–4

–1.4

–1 to 0

—

–5.4

–1.8

—

LSB⁴V_ADIN

V_DDA

=

5

Quantization error

LSB⁴

0.5

ENOB Effective number of 16-bit differential mode; Buck

7

bits

Mode⁶

12

12.75

11.75

—

bits

• Avg = 32

• Avg = 4

11.25

16-bit single-ended mode;

Buck Mode⁶

• Avg = 32

• Avg = 4

11

11.5

10.5

—

9.5

16-bit differential mode;

Bypass Mode

• Avg = 32

• Avg = 4

12.5

13

12

—

11.25

16-bit single-ended mode;

Bypass Mode

11

11.75

—

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Table 31. 16-bit ADC characteristics (V_REFH= V_DDA, V_REFL= V_SSA) (continued)

Symbol Description

Conditions¹

Min.

Typ.²

Max.

Unit

Notes

• Avg = 32

• Avg = 4

10

10.5

—

Signal-to-noise

SINAD

See ENOB

6.02 × ENOB + 1.76

dB

plus distortion

THD Total harmonic

distortion

16-bit differential mode; Buck

Mode⁶

8

• Avg = 32

—

–90

–88

—

dB

16-bit single-ended mode;

Buck Mode⁶

• Avg = 32

—

16-bit differential mode;

Bypass Mode

• Avg = 32

—

–89

16-bit single-ended mode;

Bypass Mode

• Avg = 32

See ENOB

–87

Signal-to-noise

SINAD

6.02 × ENOB + 1.76

dB

plus distortion

SFDR Spurious free

dynamic range

distortion

16-bit differential mode; Buck

Mode⁶

8

• Avg = 32

85

89

87

—

16-bit single-ended mode;

Buck Mode⁶

• Avg = 32

—

16-bit differential mode;

Bypass Mode

• Avg = 32

87

85

94

16-bit single-ended mode;

Bypass Mode

• Avg = 32

88

E_IL

Input leakage error

I_In× R_AS

mV

I_In=

leakage

current

(see

Voltage

and

current

operating

ratings)

Temp sensor slope Across the full temperature

range of the device

1.67

1.74

1.81

mV/°

C

9

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Table 31. 16-bit ADC characteristics (V_REFH= V_DDA, V_REFL= V_SSA) (continued)

Symbol Description

Conditions¹

Min.

Typ.²

Max.

Unit

Notes

V_TEMP25Temp sensor

voltage

25 °C

706

716

726

mV

9

1. All accuracy numbers assume that the ADC is calibrated with V_REFH= V_DDA

.

2. Typical values assume V_DDA= 3.0 V, Temp = 25 °C, f_ADCK= 2.0 MHz unless otherwise stated. Typical values are for

reference only and are not tested in production.

3. The ADC supply current depends on the ADC conversion clock speed, conversion rate and ADC_CFG1[ADLPC] (low-

power). For lowest power operation, ADC_CFG1[ADLPC] must be set, the ADC_CFG2[ADHSC] bit must be clear with

1 MHz ADC conversion clock speed.

4. 1 LSB = (V_REFH- V_REFL)/2^N.

5. ADC conversion clock < 16 MHz, maximum hardware averaging (AVGE = %1, AVGS = %11).

6. VREFH = Output of Voltage Reference(VREF).

7. Input data is 100 Hz sine wave. ADC conversion clock < 12 MHz.

8. Input data is 1 kHz sine wave. ADC conversion clock < 12 MHz.

9. ADC conversion clock < 3 MHz.

6.5.6.2 Voltage reference electrical specifications

Table 32. VREF full-range operating requirements

Symbol

V_DDA

T_A

Description

Min.

Max.

Unit

V

Notes

Supply voltage

Temperature

1.71

3.6

–40 to 105

100

°C

nF

C_L

Output load capacitance

1, 2

1. C_Lmust be connected to VREF_OUT if the VREF_OUT functionality is being used for either an internal or external

reference.

2. The load capacitance should not exceed +/–25% of the nominal specified C_Lvalue over the operating temperature

range of the device.

Table 33. VREF full-range operating behaviors

Symbol Description

Min.

Typ.

Max.

Unit

Notes

V_out

Voltage reference output with factory trim at

1.190

1.1950

1.2

V

1

nominal V_DDAand temperature=25 °C

V_out

Voltage reference output with user trim at

nominal V_DDAand temperature=25 °C

1.1945

1.1950

1.1955

V

1

V_step

V_tdrift

Voltage reference trim step

—

0.5

—

mV

1

Temperature drift (V_max-V_minacross the full

temperature range)

20

I_bg

I_lp

Bandgap only current

—

80

360

1

µA

uA

mA

µV

Low-power buffer current

High-power buffer current

1

I_hp

ΔV_LOADLoad regulation

1, 2

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Table 33. VREF full-range operating behaviors (continued)

Symbol Description

• current = 1.0 mA

Min.

Typ.

Max.

Unit

Notes

—

200

—

T_stup

Buffer startup time

—

100

35

µs

T_{chop_osc_st}Internal bandgap start-up delay with chop

ms

oscillator enabled

up

V_vdrift

Voltage drift (V_max–V_minacross the full voltage

range)

—

2

—

mV

1

1. See the chip's Reference Manual for the appropriate settings of the VREF Status and Control register.

2. Load regulation voltage is the difference between the VREF_OUT voltage with no load vs. voltage with defined load

Table 34. VREF limited-range operating requirements

Symbol

Description

Min.

Max.

Unit

Notes

T_A

Temperature

0

70

°C

Table 35. VREF limited-range operating behaviors

Symbol

Description

Min.

Max.

Unit

Notes

V_tdrift

Temperature drift (V_max–V_minacross the limited

temperature range)

—

15

mV

6.5.6.3 CMP and 6-bit DAC electrical specifications

Table 36. Comparator and 6-bit DAC electrical specifications

Symbol

V_DD

Description

Min.

1.71

—

Typ.

—

Max.

3.6

Unit

V

Supply voltage

I_DDHS

I_DDLS

V_AIN

Supply current, High-speed mode (EN=1, PMODE=1)

Supply current, low-speed mode (EN=1, PMODE=0)

Analog input voltage

—

200

20

μA

V

—

V_SS– 0.3

—

V_DD

20

V_AIO

Analog input offset voltage

Analog comparator hysteresis¹

• CR0[HYSTCTR] = 00

—

mV

V_H

—

5

—

mV

10

20

30

• CR0[HYSTCTR] = 01

• CR0[HYSTCTR] = 10

• CR0[HYSTCTR] = 11

V_CMPOh

V_CMPOl

Output high

Output low

V_DD– 0.5

—

V

0.5

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Table 36. Comparator and 6-bit DAC electrical specifications (continued)

Symbol

t_DHS

Description

Min.

20

Typ.

50

250

—

Max.

200

600

40

Unit

ns

Propagation delay, high-speed mode (EN=1, PMODE=1)

Propagation delay, low-speed mode (EN=1, PMODE=0)

Analog comparator initialization delay²

6-bit DAC current adder (enabled)

t_DLS

80

ns

—

μs

I_DAC6b

INL

—

7

—

μA

LSB³

6-bit DAC integral non-linearity

–0.5

–0.3

—

0.5

0.3

DNL

6-bit DAC differential non-linearity

—

LSB

1. Typical hysteresis is measured with input voltage range limited to 0.6 to V_DD–0.6 V.

2. Comparator initialization delay is defined as the time between software writes to change control inputs (Writes to

CMP_DACCR[DACEN], CMP_DACCR[VRSEL], CMP_DACCR[VOSEL], CMP_MUXCR[PSEL], and

CMP_MUXCR[MSEL]) and the comparator output settling to a stable level.

3. 1 LSB = V_reference/64

0.08

0.07

0.06

HYSTCTR

Setting

0.05

0.04

0.03

00

01

10

11

0.02

0.01

0

0.1

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

Vin level (V)

Figure 13. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 0)

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0.18

0.16

0.14

0.12

HYSTCTR

Setting

0.1

00

01

10

11

0.08

0.06

0.04

0.02

0

0.1

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

Vin level (V)

Figure 14. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 1)

6.5.7 Timers

See General switching specifications.

6.5.8 Communication interfaces

6.5.8.1 CAN switching specifications

See General switching specifications.

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6.5.8.2 DSPI switching specifications (limited voltage range)

The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with

master and slave operations. Many of the transfer attributes are programmable. The

tables below provide DSPI timing characteristics for classic SPI timing modes. See

the DSPI chapter of the Reference Manual for information on the modified transfer

formats used for communicating with slower peripheral devices.

Table 37. Master mode DSPI timing (limited voltage range)

Num

Description

Min.

2.7

Max.

3.6

12

Unit

V

Notes

Operating voltage

Frequency of operation

—

MHz

ns

DS1

DS2

DS3

DSPI_SCK output cycle time

DSPI_SCK output high/low time

DSPI_PCSn valid to DSPI_SCK delay

2 x t_BUS

—

(t_SCK/2) − 2 (t_SCK/2) + 2

ns

(t_BUSx 2) −

2

—

ns

1

2

DS4

DSPI_SCK to DSPI_PCSn invalid delay

(t_BUSx 2) −

2

—

ns

DS5

DS6

DS7

DS8

DSPI_SCK to DSPI_SOUT valid

DSPI_SCK to DSPI_SOUT invalid

DSPI_SIN to DSPI_SCK input setup

DSPI_SCK to DSPI_SIN input hold

—

–2

8.5

—

ns

16.2

0

1. The delay is programmable in SPIx_CTARn[PCSSCK] and SPIx_CTARn[CSSCK].

2. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC].

SPI_PCSn

DS1

DS3

DS2

DS4

SPI_SCK

(CPOL=0)

DS8

DS7

Data

Last data

First data

SPI_SIN

DS5

DS6

First data

Data

Last data

SPI_SOUT

Figure 15. DSPI classic SPI timing — master mode

Table 38. Slave mode DSPI timing (limited voltage range)

Num

Description

Min.

Max.

3.6

6

Unit

V

Operating voltage

2.7

Frequency of operation

MHz

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Table 38. Slave mode DSPI timing (limited voltage range) (continued)

Num

DS9

Description

DSPI_SCK input cycle time

Min.

Max.

Unit

ns

4 x t_BUS

—

DS10

DS11

DS12

DS13

DS14

DS15

DS16

DSPI_SCK input high/low time

(t_SCK/2) − 2

(t_SCK/2) + 2

DSPI_SCK to DSPI_SOUT valid

—

0

21.4

—

DSPI_SCK to DSPI_SOUT invalid

DSPI_SIN to DSPI_SCK input setup

DSPI_SCK to DSPI_SIN input hold

DSPI_SS active to DSPI_SOUT driven

DSPI_SS inactive to DSPI_SOUT not driven

2.6

7.0

—

14

SPI_SS

DS10

DS9

SPI_SCK

(POL=0)

DS15

DS12

DS16

DS11

First data

DS14

Last data

SPI_SOUT

Data

DS13

First data

Last data

SPI_SIN

Figure 16. DSPI classic SPI timing — slave mode

6.5.8.3 DSPI switching specifications (full voltage range)

The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with

master and slave operations. Many of the transfer attributes are programmable. The

tables below provide DSPI timing characteristics for classic SPI timing modes. See the

DSPI chapter of the Reference Manual for information on the modified transfer formats

used for communicating with slower peripheral devices.

Table 39. Master mode DSPI timing (full voltage range)

Num

Description

Min.

1.71

Max.

3.6

12

Unit

V

Notes

Operating voltage

1

Frequency of operation

—

MHz

ns

DS1

DS2

DSPI_SCK output cycle time

DSPI_SCK output high/low time

2 x t_BUS

—

(t_SCK/2) – 4 (t_SCK/2)+ 4

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Table 39. Master mode DSPI timing (full voltage range) (continued)

Num

Description

Min.

Max.

Unit

Notes

DS3

DSPI_PCSn valid to DSPI_SCK delay

(t_BUSx 2) −

4

—

ns

2

DS4

DSPI_SCK to DSPI_PCSn invalid delay

(t_BUSx 2) −

4

—

ns

3

DS5

DS6

DS7

DS8

DSPI_SCK to DSPI_SOUT valid

DSPI_SCK to DSPI_SOUT invalid

DSPI_SIN to DSPI_SCK input setup

DSPI_SCK to DSPI_SIN input hold

—

–1.2

23.3

0

10

—

ns

1. The DSPI module can operate across the entire operating voltage for the processor, but to run across the full voltage

range the maximum frequency of operation is reduced.

2. The delay is programmable in SPIx_CTARn[PCSSCK] and SPIx_CTARn[CSSCK].

3. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC].

SPI_PCSn

DS1

DS3

DS2

DS4

SPI_SCK

(CPOL=0)

DS8

DS7

Data

Last data

First data

SPI_SIN

DS5

DS6

First data

Data

Last data

SPI_SOUT

Figure 17. DSPI classic SPI timing — master mode

Table 40. Slave mode DSPI timing (full voltage range)

Num

Description

Min.

Max.

Unit

V

Operating voltage

1.71

3.6

Frequency of operation

—

6

MHz

ns

DS9

DSPI_SCK input cycle time

4 x t_BUS

—

DS10

DS11

DS12

DS13

DS14

DS15

DS16

DSPI_SCK input high/low time

(t_SCK/2) – 4

(t_SCK/2)+ 4

ns

DSPI_SCK to DSPI_SOUT valid

DSPI_SCK to DSPI_SOUT invalid

DSPI_SIN to DSPI_SCK input setup

DSPI_SCK to DSPI_SIN input hold

DSPI_SS active to DSPI_SOUT driven

DSPI_SS inactive to DSPI_SOUT not driven

—

0

29.1

—

ns

3.2

7.0

—

ns

—

ns

25

ns

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SPI_SS

DS10

DS9

SPI_SCK

DS15

DS12

DS16

DS11

(POL=0)

First data

DS14

Last data

SPI_SOUT

Data

DS13

First data

Last data

SPI_SIN

Figure 18. DSPI classic SPI timing — slave mode

6.5.8.4 Inter-Integrated Circuit Interface (I²C) timing

Table 41. I ²C timing

Characteristic

Symbol

Standard Mode

Minimum Maximum

100

Fast Mode

Unit

Minimum

Maximum

400

SCL Clock Frequency

f_SCL

0

kHz

µs

Hold time (repeated) START condition.

After this period, the first clock pulse is

generated.

t_HD; STA

4

—

0.6

—

LOW period of the SCL clock

HIGH period of the SCL clock

t_LOW

t_HIGH

4.7

4

—

1.3

0.6

—

µs

Set-up time for a repeated START

condition

t_SU; STA

4.7

Data hold time for I²C bus devices

t_HD; DAT

t_SU; DAT

t_r

0¹

250⁴

—

3.45²

—

0³

100^{2, 5}

0.9¹

—

µs

ns

Data set-up time

5,

Rise time of SDA and SCL signals

1000

20 +0.1C_b

300

6

Fall time of SDA and SCL signals

Set-up time for STOP condition

t_f

—

300

20 +0.1C_b

300

ns

6

t_SU; STO

t_BUF

4

—

0.6

1.3

—

µs

Bus free time between STOP and

START condition

4.7

Pulse width of spikes that must be

suppressed by the input filter

t_SP

N/A

0

50

ns

1. The master mode I²C deasserts ACK of an address byte simultaneously with the falling edge of SCL. If no slaves

acknowledge this address byte, then a negative hold time can result, depending on the edge rates of the SDA and SCL

lines.

2. The maximum t_HD; DAT must be met only if the device does not stretch the LOW period (t_LOW) of the SCL signal.

3. Input signal Slew = 10 ns and Output Load = 50 pF.

4. Set-up time in slave-transmitter mode is 1 IP Bus clock period, if the TX FIFO is empty.

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5. A Fast mode I²C bus device can be used in a Standard mode I²C bus system, but the requirement t_{SU; DAT}≥ 250 ns

must then be met. This is automatically the case if the device does not stretch the LOW period of the SCL signal. If

such a device does stretch the LOW period of the SCL signal, then it must output the next data bit to the SDA line t_rmax

+ t_{SU; DAT}= 1000 + 250 = 1250 ns (according to the Standard mode I²C bus specification) before the SCL line is

released.

6. C_b= total capacitance of the one bus line in pF.

SDA

t_{SU; DAT}

t_f

t_r

t_BUF

t_f

t_r

t_{HD; STA}

t_SP

t_LOW

SCL

t_{SU; STA}

t_{SU; STO}

HD; STA

S

SR

P

S

t_{HD; DAT}

t_HIGH

Figure 19. Timing definition for fast and standard mode devices on the I²C bus

6.5.8.5 LPUART

See General switching specifications.

6.5.9 Human-machine interfaces (HMI)

6.5.9.1 GPIO

The maximum input voltage on PTC0/1/2/3 is VDD+0.3V. For rest of the GPIO

specification, see General switching specifications.

6.6 DC-DC Converter Operating Requirements

Table 42. DC-DC Converter operating conditions

Characteristic

Symbol

Min

Typ

Max

Unit

Bypass Mode Supply Voltage (RF and Analog)

VDD_RF1

VDD_RF2

,

1.425

—

3.6

Vdc

VDD_RF3, V_{DD_1P5}

Bypass Mode Supply Voltage (Digital)

VDD_X, V_{DCDC_IN}

VDD_A

,

1.71

2.1

—

3.6

Vdc

Buck Mode Supply Voltage ^{1, 2}

DC-DC Inductor

Value

V_{DCDC_IN}

—

10

—

μH

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Table 42. DC-DC Converter operating conditions (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ESR

—

<0.2

<0.5

Ohms

1. In Buck mode, DC-DC converter needs 2.1 V minimum to start, the supply can drop to 1.8 V after DC-DC converter

settles.

2. In Buck mode, DC-DC converter generates 1.8 V at VDD_1P8OUT and 1.5 V at VDD_1P5OUT_PMCIN pins.

VDD_1P8OUT should supply to VDD₁, VDD₂and VDD_A. VDD_1P5OUT_PMCIN should supply to VDD_RF₁and

VDD_RF₂. VDD_RF₃can be either supplied by 1.5 V or 1.8 V.

Table 43. DC-DC Converter Specifications

Characteristics

Conditions

Symbol

Min

—

Typ

—

Max

195¹

140¹

Unit

mW

DC-DC Converter Output

Power (total power output of

1p8V and 1p5V)

V_{DCDC_IN}above 2.7 V Pdcdc_out1

V_{DCDC_IN}below 2.7 V Pdcdc_out2

—

Switching Frequency²

Half FET Threshold

Double FET Threshold

Buck Mode

DCDC_FREQ

I_half_FET

—

2

5

—

MHz

mA

I_double_FET

40

mA

DC-DC Conversion Efficiency

DCDC_EFF_buck

VDD_1P8_buck

—

90%

—

1.71

min(VDCD Vdc

C_IN_buck

, 3.5)^{3, 4}

1.8 V Output Voltage

VDD_1P8 = 3.0 V

IDD_1P8_buck1

IDD_1P8_buck2

IDD_1P8_buck3

—

39

45

35

mA

1.5 V <= VDC_1P5

<= 1.7 V

V_{DCDC_IN}=3.1 V

VDD_1P8 = 2.65 V

1.5 V <= VDC_1P5

<= 1.7 V

1.8 V Output Current^{5, 6}

V_{DCDC_IN}=2.7 V

VDD_1P8 = 1.8 V

1.5 V <= VDC_1P5

<= 1.7 V

V_{DCDC_IN}=2.1 V

7

1.5 V Output Voltage

1.5 V Output Current^{5, 8}

Consumed by Radio VDD_1P5_buck

IDD_1P5_buck

1.5

—

1.8

45

—

Vdc

mA

μs

—

DC-DC Transition Operating

Behavior

LSS➔Run

t_DCDCbuck_LSS➔R

—

50

UN

DC-DC Turn on Time

T_{DCDC_ON}

T_{DCDC_SETTLE_buck}

—

2.2⁹

3.11

—

ms

DC-DC Settling Time for

increasing voltage

ms/V

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Table 43. DC-DC Converter Specifications (continued)

Characteristics

Conditions

Symbol

Min

Typ

Max

Unit

DC-DC Settling Time for

decreasing voltage

C = capacitance

attached to the DC-

DC V1P8 output rail.

T_{DCDC_SETTLE_buck}

—

(C*(V1–

V2)/I2

—

s

V1 = the initial output

voltage of the DC-DC

V2 = the final output

voltage of the DC-DC

I2 = the load on the

DC-DC output

expressed in

Amperes.

1. This is the steady state DC output power. Excessive transient current load from external device will cause 1p8V and

1P5 output voltage unregulated temporary.

2. This is the frequency that is observed at LN and LP pins.

3. The voltage output level can be controlled by programming DCDC_VDD1P8CTRL_TRG field in DCDC_REG3.

4. In Buck mode, the maximum VDD_1P8 output is the minimum of either VDCDC_IN_BUCK minus 50 mV or 3.5 V. For

example, if VDCDC_IN = 2.1 V, maximum VDD_1P8 is 2.05 V. If VDCDC_IN = 3.6 V, maximum VDD_1P8 is 3.5 V.

5. The output current specification in buck mode represents the maximum current the DC-DC converter can deliver. The

KW39/38/37 radio and MCU blocks current consumption is not excluded. The maximum output power of the DC-DC

converter is 140 mW when V_{DCDC_IN}is below 2.7 V and 195 mW when V_{DCDC_IN}is above 2.7 V. The available supply

current for external device depends on the energy consumed by the internal peripherals in KW39/38/37.

6. When using DC-DC in low-power mode (pulsed mode), current load must be less than 1 mA.

7. User needs to program DCDC_VDD1P5CTRL_TRG_BUCK field in DCDC_REG3 register to ensure that a worst case

minimum of 1.5 V is available as VDD_1P5_buck. VDD_1P5 must not be programmed higher than VDD_1P8.

8. 1.5 V is intended to supply power to KW39/38/37. It is not designed to supply power to an external device.

9. Turn on time is measured from the application of power (to DCDC_IN) till the DCDC_REG0[DCDC_STS_DC_OK] bit

is set. Code execution may begin before the DCDC_REG0[DCDC_STS_DC_OK] bit is set. The full device

specification is not guaranteed until the bit sets.

6.7 Ratings

6.7.1 Thermal handling ratings

Table 44. Thermal handling ratings

Symbol

T_STG

Description

Min.

–55

—

Max.

150

Unit

°C

Notes

Storage temperature

Solder temperature, lead-free

1

2

T_SDR

260

°C

1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.

2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic

Solid State Surface Mount Devices.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

75

NXP Semiconductors

Pin Diagrams and Pin Assignments

6.7.2 Moisture handling ratings

Table 45. Moisture handling ratings

Symbol

Description

Min.

Max.

Unit

Notes

MSL

Moisture sensitivity level

—

3

—

1

1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic

Solid State Surface Mount Devices.

6.7.3 ESD handling ratings

Table 46. ESD handling ratings

Symbol Description

Min.

Max.

Unit

Notes

V_HBM

V_CDM

Electrostatic discharge voltage, human body model

–2000

+2000

V

1

2

Electrostatic discharge voltage, charged-device model

All pins except the corner pins

–500

–750

–100

500

750

V

Corner pins only

I_LAT

Latch-up current at ambient temperature of 105 °C

+100

mA

3

1. Determined according to JEDEC Standard JS001, Electrostatic Discharge (ESD) Sensitivity Testing Human Body

Model (HBM).

2. Determined according to JEDEC Standard JS002, Field-Induced Charged-Device Model Test Method for Electrostatic-

Discharge-Withstand Thresholds of Microelectronic Components.

3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.

6.7.4 Voltage and current operating ratings

Table 47. Voltage and current operating ratings

Symbol

V_DD

I_DD

Description

Min.

–0.3

—

Max.

3.8

Unit

V

Digital supply voltage

Digital supply current

IO pin input voltage

120

mA

V

V_IO

–0.3

–25

V_DD+ 0.3

25

I_D

Instantaneous maximum current single pin limit (applies to

all port pins)

mA

V_DDA

Analog supply voltage

V_DD– 0.3

GND

V_DD+ 0.3

VDCDC

V

V_{IO_DCDC}

IO pins in the DC-DC voltage domain (DCDC_CFG and

PSWITCH)

7 Pin Diagrams and Pin Assignments

76

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Pin Diagrams and Pin Assignments

7.1 KW39/37 Signal Multiplexing and Pin Assignments

The following table shows the signals available on each pin and the locations of these

pins on the devices supported by this document. The Port Control and Interrupt

module is used to select the functionality for each GPIO pin. ALT0 is reserved for

analog functions on some GPIO pins. ALT1 – ALT9 are assigned to the available

digital functions on each GPIO pin. GPIO pins with a default of “disabled” are high

impedance after reset – their input and output buffers are disabled.

48

Pin Name

Default

ALT0

ALT1

ALT2

ALT3

ALT4

ALT5

ALT6

ALT7

ALT8

ALT9

"Wett

able"

HVQ

FN

1

PTA0

PTA1

SWD_DIO

SWD_CLK

PTA0/

RF_ACTIVE

SPI0_PCS1

SPI1_PCS0

TPM1_CH0

TPM1_CH1

SWD_DIO

SWD_CLK

2

PTA1/

RF_

STATUS

3

4

PTA2

RESET_b

PTA2

TPM0_CH3

TPM0_CH0

RESET_b

PTA16

DISABLED

PTA16/

LLWU_P4

SPI1_SOUT

SPI1_SIN

5

6

7

PTA17

DISABLED

ADC0_SE5

PSWITCH

PTA17/

LLWU_P5

TPM_

CLKIN1

PTA18

PTA18/

LLWU_P6

SPI1_SCK

SPI1_PCS0

TPM2_CH0

TPM2_CH1

PTA19

ADC0_SE5

PSWITCH

PTA19/

LLWU_P7

8

9

PSWITCH

DCDC_

CFG/

DCDC_

CFG/

DCDC_

CFG/

VDCDC_IN

10

11

12

13

DCDC_LP

DCDC_GND DCDC_GND DCDC_GND

DCDC_LN

VDD_

1P8OUT

14

15

DCDC_LN

VDD_

1P5OUT_

PMCIN

1P5OUT_

PMCIN

1P5OUT_

PMCIN

16

PTB0

DISABLED

PTB0/

I2C0_SCL

CMP0_OUT TPM0_CH1

CLKOUT

LLWU_P8/

RF_

RFOSC_EN

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

77

NXP Semiconductors

Pin Diagrams and Pin Assignments

48

Pin Name

Default

ALT0

ALT1

ALT2

ALT3

ALT4

ALT5

ALT6

ALT7

ALT8

ALT9

"Wett

able"

HVQ

FN

17

PTB1

PTB2

ADC0_SE1/ ADC0_SE1/ PTB1/

DTM_RX

I2C0_SDA

DTM_TX

LPTMR0_

ALT1

TPM0_CH2

TPM1_CH0

CMT_IRO

CMP0_IN5

RF_

PRIORITY

18

ADC0_SE3/ ADC0_SE3/ PTB2/

TPM0_CH0

TPM2_CH0

TPM2_CH1

CMP0_IN3

RF_NOT_

ALLOWED/

LLWU_P9

19

PTB3

ADC0_SE2/ ADC0_SE2/ PTB3/

TPM0_CH1

CLKOUT

TPM1_CH1

RTC_

CMP0_IN4

ERCLK32K/

RF_ACTIVE

CLKOUT

20

21

22

23

VDD_0

PTB16

PTB17

PTB18

VDD_0

EXTAL32K

XTAL32K

NMI_b

EXTAL32K

XTAL32K

PTB16

PTB17

I2C1_SCL

I2C1_SDA

I2C1_SCL

TPM2_CH0

TPM2_CH1

TPM0_CH0

ADC0_SE4/ PTB18

CMP0_IN2

TPM_

CLKIN0

NMI_b

24

25

26

27

ADC0_DP0

ADC0_DM0

ADC0_DP0/ ADC0_DP0/

CMP0_IN0 CMP0_IN0

ADC0_DM0/ ADC0_DM0/

CMP0_IN1

VREFL/

VSSA

VREFL/

VSSA

VREFL/

VSSA

VREFH/

VREF_OUT

28

29

30

31

32

33

34

35

36

37

VDDA

XTAL_OUT

EXTAL

XTAL

XTAL_OUT

EXTAL

XTAL_OUT

EXTAL

XTAL

VDD_RF3

ANT

VDD_RF3

ANT

VDD_RF3

ANT

GANT

VDD_RF2

VDD_RF1

PTC1

VDD_RF2

VDD_RF1

DISABLED

VDD_RF2

VDD_RF1

PTC1/

RF_EARLY_

WARNING

ANT_B

I2C0_SDA

LPUART0_

RTS_b

TPM0_CH2

SPI1_SCK

38

39

40

PTC2

PTC3

PTC4

DISABLED

PTC2/

LLWU_P10

TX_

SWITCH

I2C1_SCL

I2C1_SDA

EXTRG_IN

LPUART0_

RX

CMT_IRO

DTM_RX

DTM_TX

I2C0_SCL

SPI1_SOUT

SPI1_SIN

PTC3/

LLWU_P11

RX_

SWITCH

LPUART0_

TX

TPM0_CH1

TPM1_CH0

PTC4/

LLWU_P12/

RF_ACTIVE

ANT_A

LPUART0_

CTS_b

SPI1_PCS0

78

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

Pin Diagrams and Pin Assignments

48

Pin Name

Default

ALT0

ALT1

ALT2

ALT3

ALT4

ALT5

ALT6

ALT7

ALT8

ALT9

"Wett

able"

HVQ

FN

41

PTC5

DISABLED

PTC5/

LPTMR0_

ALT2

LPUART0_

RTS_b

TPM1_CH1

LLWU_P13/

RF_NOT_

ALLOWED/

RF_

PRIORITY

42

43

PTC6

PTC7

DISABLED

PTC6/

LLWU_P14/

RF_

I2C1_SCL

LPUART0_

RX

TPM2_CH0

RFOSC_EN

PTC7/

LLWU_P15

SPI0_PCS2

SPI0_SCK

I2C1_SDA

I2C0_SDA

LPUART0_

TX

TPM2_CH1

TPM0_CH3

44

45

VDD_1

PTC16

VDD_1

DISABLED

PTC16/

LLWU_P0/

RF_

LPUART0_

RTS_b

STATUS

46

PTC17

DISABLED

PTC17/

SPI0_SOUT I2C1_SCL

LPUART0_

RX

DTM_RX

DTM_TX

LLWU_P1/

RF_EXT_

OSC_EN

47

48

PTC18

PTC19

DISABLED

PTC18/

LLWU_P2

SPI0_SIN

I2C1_SDA

I2C0_SCL

LPUART0_

TX

PTC19/

SPI0_PCS0

LPUART0_

CTS_b

LLWU_P3/

RF_EARLY_

WARNING

49

Ground

NA

7.2 KW38 Signal Multiplexing and Pin Assignments

The following table shows the signals available on each pin and the locations of these

pins on the devices supported by this document. The Port Control and Interrupt

module is used to select the functionality for each GPIO pin. ALT0 is reserved for

analog functions on some GPIO pins. ALT1 – ALT9 are assigned to the available

digital functions on each GPIO pin. GPIO pins with a default of “disabled” are high

impedance after reset – their input and output buffers are disabled.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

79

NXP Semiconductors

Pin Diagrams and Pin Assignments

48

Pin Name

Default

ALT0

ALT1

ALT2

ALT3

ALT4

ALT5

ALT6

ALT7

ALT8

ALT9

"Wett

able"

HVQ

FN

1

PTA0

SWD_DIO

SWD_CLK

PTA0/

RF_ACTIVE

SPI0_PCS1

SPI1_PCS0

TPM1_CH0

TPM1_CH1

SWD_DIO

SWD_CLK

RESET_b

2

PTA1

PTA1/

RF_STATUS

3

4

PTA2

RESET_b

PTA2

TPM0_CH3

TPM0_CH0

PTA16

DISABLED

PTA16/

LLWU_P4

SPI1_SOUT

SPI1_SIN

LPUART1_

RTS_b

5

6

7

PTA17

DISABLED

ADC0_SE5

PSWITCH

PTA17/

LLWU_P5

LPUART1_

RX

CAN0_TX

CAN0_RX

TPM_

CLKIN1

PTA18

PTA18/

LLWU_P6

SPI1_SCK

SPI1_PCS0

LPUART1_

TX

TPM2_CH0

PTA19

ADC0_SE5

PSWITCH

PTA19/

LLWU_P7

LPUART1_

CTS_b

TPM2_CH1

8

9

PSWITCH

DCDC_CFG/ DCDC_CFG/ DCDC_CFG/

VDCDC_IN

10

11

12

13

DCDC_LP

DCDC_GND DCDC_GND DCDC_GND

DCDC_LN

VDD_

1P8OUT

14

15

DCDC_LN

VDD_

1P5OUT_

PMCIN

1P5OUT_

PMCIN

1P5OUT_

PMCIN

16

PTB0

DISABLED

PTB0/

I2C0_SCL

CMP0_OUT

TPM0_CH1

CLKOUT

CAN0_TX

LLWU_P8/

RF_

RFOSC_EN

17

18

PTB1

PTB2

ADC0_SE1/

CMP0_IN5

ADC0_SE1/

CMP0_IN5

PTB1/

RF_

PRIORITY

DTM_RX

I2C0_SDA

DTM_TX

LPTMR0_

ALT1

TPM0_CH2

TPM1_CH0

CMT_IRO

CAN0_RX

ADC0_SE3/

CMP0_IN3

ADC0_SE3/

CMP0_IN3

PTB2/

TPM0_CH0

TPM2_CH0

RF_NOT_

ALLOWED/

LLWU_P9

19

PTB3

ADC0_SE2/

CMP0_IN4

ADC0_SE2/

CMP0_IN4

PTB3/

ERCLK32K/

RF_ACTIVE

LPUART1_

RTS_b

TPM0_CH1

CLKOUT

TPM1_CH1

RTC_

CLKOUT

TPM2_CH1

20

21

VDD_0

PTB16

VDD_0

EXTAL32K

PTB16

PTB17

LPUART1_

RX

I2C1_SCL

I2C1_SDA

TPM2_CH0

TPM2_CH1

22

PTB17

XTAL32K

LPUART1_

TX

80

NXP Semiconductors

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

Pin Diagrams and Pin Assignments

48

Pin Name

Default

ALT0

ALT1

ALT2

ALT3

ALT4

ALT5

ALT6

ALT7

ALT8

ALT9

"Wett

able"

HVQ

FN

23

24

25

26

27

PTB18

NMI_b

ADC0_SE4/

CMP0_IN2

PTB18

LPUART1_

CTS_b

I2C1_SCL

TPM_

CLKIN0

TPM0_CH0

NMI_b

ADC0_DP0

ADC0_DM0

ADC0_DP0/

CMP0_IN0

ADC0_DP0/

CMP0_IN0

ADC0_DM0/ ADC0_DM0/

CMP0_IN1

VREFL/

VSSA

VREFL/

VSSA

VREFL/

VSSA

VREFH/

VREF_OUT

28

29

30

31

32

33

34

35

36

37

VDDA

XTAL_OUT

EXTAL

XTAL

XTAL_OUT

EXTAL

XTAL_OUT

EXTAL

XTAL

VDD_RF3

ANT

VDD_RF3

ANT

VDD_RF3

ANT

GANT

VDD_RF2

VDD_RF1

PTC1

VDD_RF2

VDD_RF1

DISABLED

VDD_RF2

VDD_RF1

PTC1/

RF_EARLY_

WARNING

ANT_B

I2C0_SDA

LPUART0_

RTS_b

TPM0_CH2

SPI1_SCK

38

39

40

PTC2

PTC3

PTC4

DISABLED

PTC2/

LLWU_P10

TX_SWITCH I2C1_SCL

LPUART0_

RX

CMT_IRO

DTM_RX

DTM_TX

I2C0_SCL

SPI1_SOUT

SPI1_SIN

PTC3/

LLWU_P11

RX_

I2C1_SDA

EXTRG_IN

LPUART0_

TX

TPM0_CH1

TPM1_CH0

CAN0_TX

CAN0_RX

SWITCH

PTC4/

LLWU_P12/

RF_ACTIVE

ANT_A

LPUART0_

CTS_b

SPI1_PCS0

41

PTC5

DISABLED

PTC5/

LPTMR0_

ALT2

LPUART0_

RTS_b

TPM1_CH1

LLWU_P13/

RF_NOT_

ALLOWED/

RF_

PRIORITY

42

PTC6

DISABLED

PTC6/

LLWU_P14/

RF_

I2C1_SCL

I2C1_SDA

LPUART0_

RX

TPM2_CH0

TPM2_CH1

RFOSC_EN

43

44

PTC7

DISABLED

VDD_1

PTC7/

LLWU_P15

SPI0_PCS2

LPUART0_

TX

VDD_1

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

81

NXP Semiconductors

Pin Diagrams and Pin Assignments

48

Pin Name

Default

ALT0

ALT1

ALT2

ALT3

ALT4

ALT5

ALT6

ALT7

ALT8

ALT9

"Wett

able"

HVQ

FN

45

PTC16

PTC17

DISABLED

PTC16/

LLWU_P0/

RF_STATUS

SPI0_SCK

I2C0_SDA

I2C1_SCL

LPUART0_

RTS_b

TPM0_CH3

LPUART1_

RTS_b

46

PTC17/

SPI0_SOUT

LPUART0_

RX

DTM_RX

DTM_TX

LPUART1_

RX

LLWU_P1/

RF_EXT_

OSC_EN

47

48

PTC18

PTC19

DISABLED

PTC18/

LLWU_P2

SPI0_SIN

I2C1_SDA

I2C0_SCL

LPUART0_

TX

LPUART1_

TX

PTC19/

SPI0_PCS0

LPUART0_

CTS_b

LPUART1_

CTS_b

LLWU_P3/

RF_EARLY_

WARNING

49

Ground

NA

7.3 KW39/38/37 Pinouts

KW39/38/37 device pinouts are shown in the figure below.

82

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Pin Diagrams and Pin Assignments

VDD_RF1

VDD_RF2

GANT

36

35

34

33

32

31

30

29

28

27

26

25

PTA0

PTA1

1

2

49

PTA2

3

ANT

PTA16

4

VDD_RF3

XTAL

PTA17

5

PTA18

6

PTA19

EXTAL

7

PSWITCH

DCDC_CFG/VDCDC_IN

DCDC_LP

DCDC_GND

DCDC_LN

XTAL_OUT

VDDA

8

9

VREFH/VREF_OUT

VREFL/VSSA

ADC0_DM0

10

11

12

*pin 49 is ground

Figure 20. 48-pin "Wettable" HVQFN pinout diagram

7.4 Module Signal Description Tables

The following sections correlate the chip-level signal name with the signal name used

in the chapter of the module. They also briefly describe the signal function and

direction.

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

83

NXP Semiconductors

Pin Diagrams and Pin Assignments

7.4.1 Core Modules

This section contains tables describing the core module signal descriptions.

Table 48. SWD Module Signal Descriptions

SoC Signal Name

SWD_DIO

Module Signal Name

SWD_DIO

Description

I/O

Serial Wire Debug Data

Input/Output¹

Serial Wire Clock²

I/O

I

SWD_CLK

1. Pulled up internally by default

2. Pulled down internally by default

7.4.2 Radio Modules

This section contains tables describing the radio signals.

Table 49. Radio Module Signal Descriptions

Module Signal Name

ANT

Pin Direction

Pin Name

Pin Description

O

ANT

Antenna

ANT_A

ANT_B

Antenna selection A for Front End Module support

Antenna selection B for Front End Module support

ANT_B

RF_ACTIVE

An output which is asserted prior to any Radio event

and remains asserted for the duration of the event.

DTM_RX

DTM_TX

GANT

I

DTM_RX

DTM_TX

GANT

Direct Test Mode Receive

Direct Test Mode Transmit

Antenna ground

O

I

RF_STATUS

O

RF_STATUS

An output which indicates when the Radio is in an

Rx or Tx event; software can also control this signal

directly.

RF_PRIORITY

O

RF_PRIORITY

An output which indicates to the external WiFi

device that the Radio event is a high priority and it

needs access to the 2.4 GHz antenna.

RF_EARLY_WARNING

RF_EARLY_WARNING Bluetooth LE LL generated signal which can be

used to wake an external sensor to make a

measurement before a Bluetooth LE event.

RF_NOT_ALLOWED

RF_TX_CONF

I

RF_NOT_ALLOWED

RF_TX_CONF

External signal which causes the internal Radio to

cease radio activity.

Signal from an external Radio which indicates the

availability of the 2.4 GHz antenna to the internal

Radio.

NOTE: This is a GPIO, not a dedicated PIN.

RX_SWITCH

TX_SWITCH

O

RX_SWITCH

TX_SWITCH

Front End Module receive mode signal.

Front End Module transmit mode signal.

84

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Pin Diagrams and Pin Assignments

Table 50. Radio Module Miscellaneous Pin Descriptions

Pin Name

Pad Direction

Pin Name

Pin Description

RF_INT_OSC_EN

I

RF_RFOSC_EN

External request to turn on the Radio's internal RF

oscillator.

RF_EXT_OSC_EN

O

RF_EXT_OSC_EN

Internal request to turn on an External oscillator for

use by the internal Radio. The request can also be

from the SoC if it is using the RF oscillator as its

clock.

7.4.3 System Modules

This section contains tables describing the system signals.

Table 51. System Module Signal Descriptions

SoC Signal Name

NMI_b

Module Signal Name

Description

Non-maskable interrupt

Reset bidirectional signal

Power supply

I/O

—

I

RESET_b

I/O

VDD_[1:0]

Ground

VDD

I

VSS

Ground

I

VDD_RF[3:1]

VDCDC_IN

VDD_1P8OUT

VDD_RF

VDCDC_IN

VDD_1P8

Radio power supply

VDCDC_IN

I

DC-DC 1.8 V Regulated

Output / Input in bypass

I/O

VDD_1P5OUT_PMCIN

VDD_1P5/VDD_PMC

DC-DC 1.5 V Regulated

Output / PMC Input in

bypass

I/O

PSWITCH

DCDC_CFG

DCDC_LP

PSWITCH

DCDC_CFG

DCDC_LP

DC-DC enable switch

I

DC-DC switch mode select

I

DC-DC inductor input

positive

I/O

DCDC_LN

DC-DC inductor input

negative

I/O

I

DCDC_GND

DC-DC ground

Table 52. LLWU Module Signal Descriptions

SoC Signal Name

Module Signal Name

LLWU_P[15:0]

Description

Wake-up inputs

I/O

LLWU_P[15:0]

I

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

85

NXP Semiconductors

Pin Diagrams and Pin Assignments

7.4.4 Clock Modules

This section contains tables for Clock signal descriptions.

Table 53. Clock Module Signal Descriptions

SoC Signal Name

EXTAL

Module Signal Name

EXTAL

Description

I/O

26 MHz/32 MHz External

clock/Oscillator input

I

XTAL

26 MHz/32 MHz Oscillator

input

XTAL_OUT

26 MHz/32 MHz Clock output O

XTAL_OUT_EN

XTAL_OUT_ENABLE

26 MHz/32 MHz Clock output I

enable for XTAL_OUT

EXTAL32K

32 kHz External clock/

Oscillator input

I

XTAL32K

CLKOUT

XTAL32K

CLKOUT

32 kHz Oscillator input

Internal clocks monitor

I

O

7.4.5 Analog Modules

This section contains tables for Analog signal descriptions.

Table 54. ADC0 Signal Descriptions

SoC Signal Name

ADC0_DM0

Module Signal Name

DADM0

Description

I/O

ADC Channel 0 Differential

Input Negative

I

ADC0_DP0

ADC0_SE[5:1]

VREFH

DADP0

AD[5:1]

V_REFSH

ADC Channel 0 Differential

Input Positive

ADC Channel 0 Single-ended I

Input n

Voltage Reference Select

High

I

VDDA

VSSA

V_DDA

V_SSA

Analog Power Supply

Analog Ground

I

Table 55. CMP0 Signal Descriptions

SoC Signal Name

Module Signal Name

IN[5:0]

CMP0

Description

Analog voltage inputs

Comparator output

I/O

CMP0_IN[5:0]

CMP0_OUT

I

O

86

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors

Pin Diagrams and Pin Assignments

Table 56. VREF Signal Descriptions

SoC Signal Name

VREF_OUT

Module Signal Name

VREF_OUT

Description

I/O

Internally generated voltage

reference output

O

7.4.6 Timer Modules

This section contains tables describing timer module signals.

Table 57. TPM0 Module Signal Descriptions

SoC Signal Name

TPM_CLKIN[1:0]

TPM0_CH[3:0]

Module Signal Name

TPM_EXTCLK

TPM_CH[3:0]

Description

External clock

TPM channel

I/O

I

I/O

Table 58. TPM1 Module Signal Descriptions

SoC Signal Name

Module Signal Name

TPM_EXTCLK

TPM_CH[1:0]

Description

External clock

TPM channel

TPM_CLKIN[1:0]

TPM1_CH[1:0]

I

I/O

Table 59. TPM2 Module Signal Descriptions

SoC Signal Name

Module Signal Name

TPM_EXTCLK

TPM_CH[1:0]

Description

External clock

TPM channel

TPM_CLKIN[1:0]

TPM2_CH[1:0]

I

I/O

Table 60. LPTMR0 Module Signal Descriptions

SoC Signal Name

LPTMR0_ALT[2:1]

Module Signal Name

Description

I/O

LPTMR0_ALT[2:1]

Pulse counter input pin

I

Table 61. RTC Module Signal Descriptions

SoC Signal Name

RTC_CLKOUT

Module Signal Name

RTC_CLKOUT

Description

1 Hz square-wave output

O

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

87

NXP Semiconductors

Pin Diagrams and Pin Assignments

7.4.7 Communication Interfaces

This section contains tables for the signal descriptions for the communication modules.

Table 62. SPI0 Module Signal Descriptions

SoC Signal Name

SPI0_PCS0

Module Signal Name

PCS0/SS

Description

Chip Select/Slave Select

Chip Select

I/O

O

SPI0_PCS[2:1]

SPI0_SCK

PCS[2:1]

SCK

Serial Clock

I/O

I

SPI0_SIN

SIN

Data In

SPI0_SOUT

SOUT

Data Out

O

Table 63. SPI1 Module Signal Descriptions

SoC Signal Name

Module Signal Name

SPI1_PCS0

Description

Chip Select/Slave Select

Serial Clock

I/O

SPI1_PCS0

SPI1_SCK

SPI1_SIN

I/O

I

SCK

SIN

Data In

SPI1_SOUT

SOUT

Data Out

O

Table 64. I2C0 Module Signal Descriptions

SoC Signal Name

Module Signal Name

SCL

SDA

Description

I2C serial clock line

I2C serial data line

I/O

I2C0_SCL

I2C0_SDA

I/O

Table 65. I2C1 Module Signal Descriptions

SoC Signal Name

Module Signal Name

SCL

SDA

Description

I2C serial clock line

I2C serial data line

I2C1_SCL

I2C1_SDA

I/O

Table 66. CAN0 Signal Descriptions (KW38 only)

SoC Signal Name

Module Signal Name

CAN RX

CAN TX

Description

CAN Receive Pin

CAN Transmit Pin

CAN0_RX

CAN0_TX

I

O

88

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NXP Semiconductors

Package Information

Table 67. LPUART0 Module Signal Descriptions

SoC Signal Name

LPUART0_CTS_b

Module Signal Name

LPUART CTS

Description

Clear To Send

I/O

I

LPUART0_RTS_b

LPUART0_RX

LPUART0_TX

LPUART RTS

LPUART RxD

LPUART TxD

Request To Send

Receive Data

Transmit Data¹

O

I

I/O

1. This pin is normally an output, but is an input (tristated) in single wire mode whenever the transmitter is disabled or

transmit direction is configured for receive data

Table 68. LPUART1 Module Signal Descriptions (KW38 only)

SoC Signal Name

LPUART1_CTS_b

Module Signal Name

LPUART CTS

Description

Clear To Send

I/O

I

LPUART1_RTS_b

LPUART1_RX

LPUART1_TX

LPUART RTS

LPUART RxD

LPUART TxD

Request To Send

Receive Data

Transmit Data¹

O

I

I/O

1. This pin is normally an output, but is an input (tristated) in single wire mode whenever the transmitter is disabled or

transmit direction is configured for receive data

7.4.8 Human-Machine Interfaces(HMI)

This section contains tables describing the HMI signals.

Table 69. GPIO Module Signal Descriptions

SoC Signal Name

PTA[19:16][2:0]

Module Signal Name

Description

I/O

PORTA19-16, 2-0

General Purpose Input/

Output

I/O

PTB[18:16][3:0]

PTC[19:16][7:1]

PORTB18-16, 3-0

PORTC19-16, 7-1

General Purpose Input/

Output

General Purpose Input/

Output

8 Package Information

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NXP Semiconductors

Part identification

8.1 Obtaining package dimensions

Package dimensions are available in package drawings.

To find a package drawing, go to nxp.com and perform a keyword search for the

document number of the drawing:

Table 70. Packaging Dimensions

If you want the drawing for this package

48-pin "Wettable" HVQFN (7x7)

Then use this document number

98ASA01307D

9 Part identification

9.1 Description

Part numbers for the chip have fields that identify the specific part. You can use the

values of these fields to determine the specific part you have received.

9.2 Format

Part numbers for this device have the following format:

Q KW## A FFF R T PP CC N

9.3 Fields

This table lists the possible values for each field in the part number (not all

combinations are valid):

Table 71. Part number fields descriptions

Field

Description

Values

Q

Qualification status

• M = Fully qualified, general market flow

• P = Prequalification

KW##

Kinetis Wireless family

• KW39

• KW38

• KW37

Table continues on the next page...

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Revision History

Table 71. Part number fields descriptions (continued)

Field

Description

Values

A

Key attribute

• A = Automotive Qualification

• Z = Industrial Qualification

FFF

T

Program flash memory size

Temperature range (°C)

• 512 = 512 KB

• V = –40 to 105

• C = –40 to 85

PP

CC

N

Package identifier

• FT = 48 "Wettable" HVQFN (7 mm x 7 mm)

• 4 = 48 MHz

Maximum CPU frequency (MHz)

Packaging type

• (Blank) = Tray

• R = Tape and reel

9.4 Example

This is an example part number:

MKW38A512VFT4

10 Revision History

Table 72. Revision History

Rev. No.

Date

Substantial Changes

Rev 7

03/2020

• Replaced VDD_XTAL with VDD_RF3.

• Preceded Tx output power value, 5 dBM, with a plus "+" sign.

• Added "256 KB P-Flash" to the fifth column name in the KW39/38/37 Part Numbers table.

• Corrected Figure 3 to show Prg Acc RAM 8 KB in place of FlexRAM 8 KB. Also added

"Prg Acc RAM" entry in Table 1.

• Corrected accuracy percentage of on-chip 4 MHz oscillator to 11% in System Clocks.

• Updated minimum and typical values in Table 4 - Top-Level Receiver Specifications.

• Updated maximum and typical values in Table 6 - Top-Level Transmitter Specifications.

Also updated footnote 3 as follows: "Measured at KW39/38/37 RF pins, with Vdd_RFx

over 1.44 V and assuming an average T_xduty cycle <=24%. For T_xoutput over +3.5 dBm,

powered Vdd_RFx has to be higher than 1.44 V.".

• Added V_{DD_1P5}specification in Voltage and current operating requirements.

• Added V_{POR_VDD_1P5}specification in LVD and POR operating requirements.

• Updated maximum value of Frequency deviation of internal reference clock to 11 in

MCG specifications.

• In Power consumption operating behaviors :

• Removed the following note: "The maximum values specified in the following tables

represent characterized results equivalent to the mean plus three times the standard

deviation (mean + 3 sigma)."

• Updated maximum values of Power consumption operating behaviors - Bypass and

Buck Modes in Table 14 and Table 15.

Table continues on the next page...

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91

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Revision History

Table 72. Revision History (continued)

Rev. No.

Date

Substantial Changes

• Added V_{DD_1P5}symbol to "Bypass Mode Supply Voltage (RF and Analog)" in DC-

DC Converter operating conditions.

• Updated minimum value to 1.5 V and removed typical value in "1.5 V Voltage

Output" in Table 43. Also updated the corresponding footnote with the correct value

of 1.5 V.

Rev 6

01/2020

• Updated Low-power Mode (VLLS0) current value to 266.6 nA in front page features under

"Low-power Consumption" section.

• Updated through out typical value of Bluetooth LE Receiver Sensitivity (2 Mbit/s and 1

Mbit/s) to -95.5 dBm and -98 dBm respectively.

• Updated typical values of Top-level receiver specifications in Table 4.

• Updated typical and maximum values in Table 14 and Table 15.

• Updated typical values of Tx (at 5 dBm) radio state at STOP and RUN MCU states in SoC

Power Consumption.

• Updated V_CDMratings in ESD handling ratings. Also updated the JEDEC standard to

JS001 and JS002.

Rev 5

12/2019

• Editorial fixes.

• Specified typical value of Rx current as 6.3 mA in front page features of the Data sheet

(under Low-power Consumption section). Also added 256 KB FlexNVM column in

KW39/38/37 Part Numbers table.

• Added Table 1.

• Corrected accuracy percentage of RC oscillator and on-chip 4 MHz oscillator to 3% and

6% respectively in System Clocks.

• Updated receiver sensitivity value to -101 dBm in Key Specifications.

• In section 4.2 - Receiver Feature Summary:

• Specified typical values of I_Rxonwith respect to DC-DC converter buck and bypass

modes in Table 4.

• Updated receiver specifications with generic FSK modulations in Table 5.

• Updated V_OH- Normal drive pad in Voltage and current operating behaviors to include

output high voltage at -1 mA.

• Added the following paragraph to Power consumption operating behaviors : "The

maximum values specified in the following tables represent characterized results

equivalent to the mean plus three times the standard deviation (mean + 3 sigma)." Also

updated units of I_{DD_VLLS1}typical values in Table 15.

• Updated maximum values in Table 14 and Table 15. Also updated mode# 20 and 21,

IDD_VLLS2 and IDD_VLLS2_16KB_16KB, to IDD_VLLS2_16KB and IDD_VLLS2_32KB.

• Updated Run mode supply current/VLPR mode current vs. core frequency images in

Diagram: Typical IDD_RUN operating behavior.

• Updated Table 26 to include operating temperature (T_A), load capacitance (C_L), and ESR

specifications.

• Updated value of V_{DCDC_IN}to 2.1 V for IDD_1P8_buck3 in 1.8V Output Current row in

Table 43.

Rev 4

08/2019

• Updated value of Typical Receiver Sensitivity to -101 dBm.

• Corrected radio block in KW39 Detailed Block Diagram. Also M1 port (connected from

AXBS to Data Stream) corrected to M3.

• Added new item ("Each individual MB is formed by 16, 24, .....") to the list of features in

FlexCAN section in Peripheral features.

• Updated typical values in Receiver Feature Summary.

• In Transmit and PLL Feature Summary :

• Specified typical value of "Bluetooth LE 2 Mbit/s Adjacent Channel Transmit Power

at 4 MHz and >=6 MHz offset".

• Updated Figure 4. TX Pout (dBm) as function TX-PA Power Code at RF pins.

Table continues on the next page...

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NXP Semiconductors

Revision History

Table 72. Revision History (continued)

Rev. No.

Date

Substantial Changes

• Updated numbers of "Transmit Output Power as a function of PA_POWER[5:0]" in

Table 7 and Table 8.

• Added Figure 5. TX Pout (dBm) as function TX-PA Power Code at RF pins (LDO-HF

bumped).

• Updated numbers in Table 16.

• Replaced "EMC design" with "KW38, HW guideline, RF system evaluation" in Designing

with radiated emissions in mind.

• Updated maximum value of Δf_{intf_ft}to 6 in MCG specifications.

• Updated Table 43 with the following:

• Added conditions, V_{DCDC_IN}above 2.7 V and below 2.7 V, in the first row, "DC-DC

Converter Output Power".

• Updated conditions in the "1.8 V Output Current" row. Also added IDD_1P8_buck3

condition to the row and updated maximum values.

• Updated "1.5 V Output Current" maximum value to 45 mA.

• Updated footnote 5 as follows: "The output current specification in buck mode

represents..... Note that the maximum output power of the DC-DC converter is 140

mW when V_{DCDC_IN}is below 2.7 V and 195 mW when V_{DCDC_IN}is above 2.7 V......".

Rev 3

Rev 2

06/2019

04/2019

• Removed "Input Voltage High/Low" rows from Radio operating conditions.

• Removed the following footnote from Table 14 - "Supported through the connectivity

software in its pre-defined Deep Sleep Modes". Also updated Typical values in Table 14

and Table 15.

• Removed "Flash timing specifications – program and erase" and "Flash high voltage

current behaviors" tables.

• Updated 48-pin "Wettable" HVQFN pinout diagram - added ground pin 49 to the diagram.

• Updated typical value of Bluetooth LE Receiver sensitivity at 2 Mbit/s from -94 to -95 dBm.

• Updated pin package drawing.

• Updated Low-power Mode (VLLS0) Current value to 252 nA and typical value of Tx

current to 5.7 mA.

• Added "512 KB P-Flash" column to this table. Also modified column name to "8 KB

FlexRAM EEPROM" from 8 KB EEPROM.

• Replaced "Prg Acc RAM 8 KB" with "FlexRAM 8 KB" in KW37 Detailed Block Diagram.

• Removed "Galois counter mode (AES-GCM)" and "DES modes" features of LTC from

Security Features.

• Updated typical values in Receiver Feature Summary. Also updated measurement

resolution to 2 MHz from 1 MHz in "Bluetooth LE uncoded 2 Mbit/s (High Speed)" section.

• Updated typical values in Table 5.

• Updated typical values of I_TX0dBm, I_TX0dBmb, I_TX3.5dBm, I_TX3.5dBmb, I_TX5dBm, and I_TX5dBmb

Also updated minimum value of TXBW_BLE2Mto 2.2 MHz in Table 6.

• Removed 48-pin LQFN package from Thermal attributes and specified values for

HVQFN48. Also replaced JESD51-2 standard with JESD51-2A in footnotes.

• In Table 14 and Table 15 :

.

• Added "Mode#" column.

• Added the following measurements—IDD_RUN_CM, IDD_VLPR_CM,

IDD_VLLS2_16KB_16KB, IDD_VLLS2_16KB_RF_Tx_RAM,

IDD_VLLS2_16KB_RF_Rx_RAM.

• Updated typical values.

• Added "Adder#" column to Table 16.

• Updated minimum and maximum values of "1.5 V Output Voltage" in Table 43. Also

specified the condition as "Consumed by Radio.".

• Removed support of DIAG1-3 signals and updated "DEFAULT" column to correct

"DISABLED" status of PTA19, PTB1/2/3 pin names in Signal Multiplexing and Pin

Assignments tables.

Table continues on the next page...

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93

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Revision History

Table 72. Revision History (continued)

Rev. No.

Date

12/2018

Substantial Changes

Rev 1

• Updated Features list on the front page:

• Updated Typical Receiver Sensitivity value of BLE LR 500 kbit/s from -99 to -101

dBm.

• Added 0.7 in the Generic FSK modulation index.

• Updated topic Radio features.

• Restructured section 3 Transceiver Description.

• Updated Full Bluetooth Low Energy version 5.0 modulation and Generic FSK modulation

values in Key Specifications.

• Updated Table 4, Table 5, and Table 6. Added Table 8.

• Added the following footnote in : "Tx continuous wave power output at the RF pins with the

recommended matching components mounted on PCB.".

Rev 1

Draft

11/2018

• Removed the following part numbers: MKW38A512VHT4, MKW38Z512VHT4, and

MKW37Z512VHT4.

• Added the following part numbers: MKW38Z512VFT4 and MKW37Z512VFT4.

• Removed 48-pin LQFN package.

• Changed 48 "Wettable" QFN to 48 "Wettable" HVQFN throughout.

• Applied new NXP Brand Guidelines for Bluetooth Low Energy. Removed references of

BLE and replaced with Bluetooth LE.

• Updated Features list on the front page:

• Corrected Typical Receiver Sensitivity value of BLE LR 500 kbit/s from -100.5 to -99

dBm.

• Corrected Typical Receiver Sensitivity (250 kbit/s GFSK-BT=0.5, h=0.5) from -100

to -103 dBm.

• Added 8 KB program acceleration RAM on KW37 to MCU and Memories section.

• Updated topic 2.2 Radio Features.

• Updated topic 2.3 Microcontroller features in the "On-Chip Memory" section to include

support of EEPROM emulation.

• Updated values of VDD_1P8OUT=1.8 V and VDD_1P8OUT=3.0 V to 45 mA and 27 mA.

• Updated maximum value of Programmable transmitter output power to 5 dBm.

• Updated typical value of RF Output power control range to 35 dB in Table 5. Top level

Transmitter Specifications.

• Removed silicon revision (R) field from Table 71. Part number fields descriptions.

Rev 0

09/2018

Initial Internal Release

94

MKW39/38/37 Data Sheet, Rev. 7, 03/2020

NXP Semiconductors


型号：	MKW37Z512VFT4
厂家：	NXP
描述：	An ultra low-power, highly integrated BluetoothÂ® Low Energy 5.0 wireless microcontroller
文件：	总95页 (文件大小：1140K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MKW37Z512VFT4 [NXP]

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