MMBTA42,215 [NXP]
MMBTA42 - NPN high-voltage transistor TO-236 3-Pin;
| 型号： | MMBTA42,215 |
| 厂家： | 
NXP |
| 描述： | MMBTA42 - NPN high-voltage transistor TO-236 3-Pin 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
MMBTA42
NPN high-voltage transistor
Product specification
2000 Apr 11
Philips Semiconductors
Product specification
NPN high-voltage transistor
MMBTA42
FEATURES
PINNING
• Low current (max. 100 mA)
• High voltage (max. 300 V).
PIN
DESCRIPTION
1
2
3
base
emitter
APPLICATIONS
collector
• Telephony
• Professional communication equipment.
handbook, halfpage
DESCRIPTION
3
3
2
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: MMBTA92.
1
MARKING
1
2
TYPE NUMBER
MMBTA42
MARKING CODE(1)
Top view
MAM255
7D
Note
Fig.1 Simplified outline (SOT23) and symbol.
1.
= p: made in Hong Kong.
= t: made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
CONDITIONS
open emitter
MIN.
MAX.
300
UNIT
−
−
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
open base
300
6
open collector
100
200
100
250
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tamb ≤ 25 °C; note 1
−65
−
junction temperature
operating ambient temperature
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Apr 11
2
Philips Semiconductors
Product specification
NPN high-voltage transistor
MMBTA42
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to ambient note 1
500
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
MIN.
MAX.
100
UNIT
nA
IE = 0; VCB = 200 V
IC = 0; VEB = 6 V
VCE = 10 V
−
−
100
nA
IC = 1 mA
25
40
40
−
−
IC = 10 mA
−
IC = 30 mA
−
VCEsat
VBEsat
Cre
collector-emitter saturation voltage
base-emitter saturation voltage
feedback capacitance
IC = 20 mA; IB = 2 mA
IC = 20 mA; IB = 2 mA
500
900
3
mV
mV
pF
−
IC = ic = 0; VCB = 20 V;
f = 1 MHz
−
fT
transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
50
−
MHz
2000 Apr 11
3
Philips Semiconductors
Product specification
NPN high-voltage transistor
MMBTA42
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2000 Apr 11
4
Philips Semiconductors
Product specification
NPN high-voltage transistor
MMBTA42
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Apr 11
5
Philips Semiconductors
Product specification
NPN high-voltage transistor
MMBTA42
NOTES
2000 Apr 11
6
Philips Semiconductors
Product specification
NPN high-voltage transistor
MMBTA42
NOTES
2000 Apr 11
7
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Printed in The Netherlands
603506/01/pp8
Date of release: 2000 Apr 11
Document order number: 9397 750 06939
相关型号：
MMBTA42-13
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES
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