MMBTA42-AE3-R [UTC]
HIGH VOLTAGE RANSISTOR; 高压RANSISTOR
| 型号： | MMBTA42-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE RANSISTOR |
| 文件： | 总4页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBTA42
NPN SILICON TRANSISTOR
HIGH VOLTAGE RANSISTOR
DESCRIPTION
The UTC MMBTA42 are high voltage transistors, designed for
telephone switch and high voltage switch.
FEATURES
* Collector-Emitter voltage: VCEO=300V
* High current gain
* Collector Dissipation: Pc (max) =350mW
* Pb-free plating product number: MMBTA42L
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
SOT-23
Normal
Lead Free Plating
MMBTA42L-AE3-R
1
2
3
MMBTA42-AE3-R
E
B
C
Tape Reel
MMBTA42L-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
1D
Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-004,C
MMBTA42
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
PC
RATINGS
300
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (TA=25℃)
Collector Current
300
V
6
V
350
mW
mA
℃
IC
500
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
℃
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
TEST CONDITIONS
Ic=100μA, IE=0
Ic=1mA, IB=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
300
300
6
V
V
IE=100μA, Ic=0
Ic=20mA, IB=2mA
Ic=20mA, IB=2mA
VCB=200V, IE=0
VBE=6V, Ic=0
V
0.2
0.90
100
100
V
V
nA
nA
Emitter Cut-Off Current
IEBO
VCE=10V, Ic=1mA
80
80
80
50
DC Current Gain
hFE
V
V
CE=10V, Ic=10mA
CE=10V, Ic=30mA
300
3
Current Gain Bandwidth Product
Collector Base Capacitance
fT
VCE=20V, Ic=10mA, f=100MHz
VCB=20V, IE=0, f=1MHz
MHz
pF
Ccb
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-004,C
www.unisonic.com.tw
MMBTA42
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain vs. Output Current
VCE=5V
DC Current Gain vs. Output Current
VCE=10V
1K
1K
500
500
Ta=150℃
Ta=25℃
Ta=150℃
Ta=25℃
200
100
50
200
100
50
Ta=-50℃
Ta=-50℃
20
10
5
20
10
5
2
1
2
1
1
2
5
10 20 50 100 200 500
1
2
5
10 20 50 100 200 500
Collector Current, IC (mA)
Collector Current, IC (mA)
Collector Emitter Saturation vs.
Collector Current
Collector Emitter Saturation vs.
Collector Current
2.0
1.8
1.0
VCE=5V
IC/IB=10
0.9
0.8
0.7
Ta=-50℃
Ta=25℃
1.6
1.4
1.2
1.0
0.6
05
Ta=150℃
Ta=25℃
0.8
0.6
0.4
0.2
0.0
0.4
0.3
0.2
0.1
0.0
Ta=150℃
Ta=-50℃
0.1
1
10
1 2
5
10 20 50 100 200 500
100
Collector Current, IC (mA)
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-004,C
www.unisonic.com.tw
MMBTA42
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-004,C
www.unisonic.com.tw
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