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MMRF1005H [NXP]

RF Power Field Effect Transistors;
MMRF1005H
型号： MMRF1005H
厂家： NXP    NXP
描述：

RF Power Field Effect Transistors
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Document Number: MMRF1005H  
Rev. 1, 4/2015  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MMRF1005HR5  
MMRF1005HSR5  
RF power transistors designed for CW and pulse applications operating at  
1300 MHz. These devices are suitable for use in defense and commercial CW  
and pulse applications, such as DME/IFF systems.  
Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA  
P
(W)  
f
G
(dB)  
(%)  
IRL  
(dB)  
out  
ps  
D
1300 MHz, 250 W, 50 V  
LATERAL N--CHANNEL  
RF POWER MOSFETs  
Signal Type  
(MHz)  
Pulse (200 sec,  
10% Duty Cycle)  
250 Peak  
1300  
22.7  
57.0  
-- 1 8  
Typical CW Performance: VDD = 50 Vdc, IDQ = 10 mA, TC = 61C  
P
(W)  
f
G
(dB)  
(%)  
IRL  
(dB)  
out  
ps  
D
Signal Type  
(MHz)  
CW  
230 CW  
1300  
20.0  
53.0  
-- 2 5  
NI--780H--2L  
MMRF1005HR5  
Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz  
at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 sec  
Features  
Characterized with series equivalent large--signal impedance parameters  
Internally matched for ease of use  
Qualified up to a maximum of 50 VDD operation  
Characterized from 20 to 50 V for extended power range  
Integrated ESD protection  
Greater negative gate--source voltage range for improved Class C  
operation  
NI--780S--2L  
MMRF1005HSR5  
In tape and reel. R5 suffix = 50 units, 56 mm tape width, 13--inch reel.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +120  
--6.0, +10  
-- 65 to +150  
150  
Unit  
Vdc  
Vdc  
C  
Drain--Source Voltage  
V
DSS  
Gate--Source Voltage  
V
GS  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
T
C
C  
(1)  
T
J
225  
C  
Total Device Dissipation @ T = 25C  
P
476  
W
C
D
Derate above 25C  
2.38  
W/C  
Table 2. Thermal Characteristics  
(2)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
C/W  
Pulse: Case Temperature 65C, 250 W Peak, 200 sec Pulse Width, 10% Duty  
Cycle, 50 Vdc, I = 100 mA, 1300 MHz  
CW: Case Temperature 77C, 235 W CW, 50 Vdc, I  
Z
R
JC  
0.07  
0.42  
DQ  
JC  
= 10 mA, 1300 MHz  
DQ  
1. Continuous use at maximum temperature will affect MTTF.  
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.  
Freescale Semiconductor, Inc., 2013, 2015. All rights reserved.  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
2
B
IV  
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Off Characteristics  
Gate--Source Leakage Current  
I
—
120  
—
—
—
—
—
1
Adc  
Vdc  
GSS  
(V = 5 Vdc, V = 0 Vdc)  
GS  
DS  
Drain--Source Breakdown Voltage  
(V = 0 Vdc, I = 50 mA)  
V
—
10  
20  
(BR)DSS  
GS  
D
Zero Gate Voltage Drain Leakage Current  
(V = 50 Vdc, V = 0 Vdc)  
I
Adc  
Adc  
DSS  
DSS  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
I
—
(V = 90 Vdc, V = 0 Vdc)  
DS  
GS  
On Characteristics  
Gate Threshold Voltage  
(V = 10 Vdc, I = 640 Adc)  
V
V
1.0  
2.0  
0.1  
1.8  
2.4  
2.7  
3.0  
0.3  
Vdc  
Vdc  
Vdc  
GS(th)  
GS(Q)  
DS(on)  
DS  
D
Gate Quiescent Voltage  
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)  
DD  
D
Drain--Source On--Voltage  
(V = 10 Vdc, I = 1.58 Adc)  
V
0.25  
GS  
D
(1)  
Dynamic Characteristics  
Reverse Transfer Capacitance  
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
C
—
—
—
1.2  
58  
—
—
—
pF  
pF  
pF  
rss  
GS  
Output Capacitance  
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
C
oss  
GS  
Input Capacitance  
C
340  
iss  
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)  
DS  
GS  
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.), f = 1300 MHz  
DD  
DQ  
out  
Pulse, 200 sec Pulse Width, 10% Duty Cycle  
Power Gain  
G
21.5  
53.5  
—
22.7  
57.0  
-- 1 8  
24.0  
—
dB  
%
ps  
D
Drain Efficiency  
Input Return Loss  
IRL  
-- 9  
dB  
Typical CW Performance (In Freescale CW Application Circuit, 50 ohm system) V = 50 Vdc, I = 10 mA, P = 230 W CW, f = 1300 MHz,  
DD  
DQ  
out  
T
C
= 61C  
Power Gain  
G
—
20.0  
—
—
—
dB  
%
ps  
Drain Efficiency  
Input Return Loss  
—
—
53.0  
-- 2 5  
D
IRL  
dB  
Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 250 W Peak (25 W Avg.),  
DD  
DQ  
out  
f = 1300 MHz, Pulse, 200 sec Pulse Width, 10% Duty Cycle  
VSWR 10:1 at all Phase Angles  
No Degradation in Output Power  
1. Part internally input matched.  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
2
Z19  
Z10  
R1  
V
V
SUPPLY  
BIAS  
+
+
+
C7  
C8  
C9  
C10 C11  
C12  
C1  
C2  
C3  
Z4  
C4  
Z7  
Z18  
RF  
OUTPUT  
Z9  
Z11  
Z12  
Z13  
Z14  
Z15 Z16  
Z17  
RF  
INPUT  
C6  
Z1  
Z2  
Z3  
Z5  
Z6  
Z8  
C5  
DUT  
Z20  
Z21  
V
SUPPLY  
+
C18  
C17 C16 C15 C14  
C13  
Z1  
0.447x 0.063Microstrip  
0.030x 0.084Microstrip  
0.120x 0.063Microstrip  
0.855x 0.293Microstrip  
0.369x 0.825Microstrip  
0.203x 0.516Microstrip  
0.105x 0.530Microstrip  
0.105x 0.530Microstrip  
0.116x 0.050Microstrip  
0.122x 0.050Microstrip  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
Z17  
Z18, Z20  
Z19*, Z21*  
0.162x 1.160Microstrip  
0.419x 1.160Microstrip  
0.468x 0.994Microstrip  
0.131x 0.472Microstrip  
0.264x 0.222Microstrip  
0.500x 0.111Microstrip  
0.291x 0.063Microstrip  
0.105x 0.388Microstrip  
0.854x 0.052Microstrip  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z8  
Z9*  
Z10  
*Line length includes microstrip bends.  
Figure 1. MMRF1005HR5(HSR5) Test Circuit Schematic — 1300 MHz, Pulse  
Table 5. MMRF1005HR5(HSR5) Test Circuit Component Designations and Values — 1300 MHz, Pulse  
Part  
Description  
22 F, 35 V Tantalum Capacitors  
0.1 F, 50 V Chip Capacitors  
100 pF Chip Capacitors  
Part Number  
Manufacturer  
C1, C2  
T491X226K035AT  
Kemet  
C3, C11, C14  
C4, C6, C7, C18  
C5  
CDR33BX104AKWS  
ATC800B101JT500XT  
ATC100B4R7CT500XT  
ATC100B102JT50XT  
ATC700B102FT50XT  
ATC200B103KT50XT  
MCGPR63V477M13X26--RH  
CRCW120615R0FKEA  
—
AVX  
ATC  
4.7 pF Chip Capacitor  
ATC  
C8, C17  
C9, C16  
C10, C15  
C12, C13  
R1  
1000 pF Chip Capacitors  
1000 pF Chip Capacitors  
10K pF Chip Capacitors  
ATC  
ATC  
ATC  
470 F, 63 V Electrolytic Capacitors  
15 , 1/4 W Chip Resistor  
Multicomp  
Vishay  
MTL  
PCB  
Rogers RO4350B, 0.030, = 3.66  
r
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
3
C7  
C9 C11  
C3  
C4  
C12  
R1  
C1 C2  
C8 C10  
C5  
C6  
C17 C15  
C18  
C13  
C16 C14  
Figure 2. MMRF1005HR5(HSR5) Test Circuit Component Layout — 1300 MHz, Pulse  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
4
TYPICAL CHARACTERISTICS — PULSE  
1000  
100  
10  
60  
V
= 50 Vdc, I = 100 mA, f = 1300 MHz  
DQ  
DD  
Ideal  
Pulse Width = 200 sec, Duty Cycle = 10%  
59  
58  
57  
C
iss  
P3dB = 55.4 dBm  
(345 W)  
C
oss  
P2dB = 55.1 dBm  
(326 W)  
56  
55  
P1dB = 54.7 dBm  
(293 W)  
Measured with 30 mV(rms)ac @ 1 MHz  
= 0 Vdc  
Actual  
V
GS  
C
rss  
54  
53  
1
0
10  
20  
30  
40  
50  
30  
31  
32  
33  
34  
35  
36  
37  
V
, DRAIN--SOURCE VOLTAGE (VOLTS)  
P , INPUT POWER (dBm) PEAK  
in  
DS  
Figure 3. Capacitance versus Drain--Source Voltage  
Figure 4. Output Power versus Input Power  
24  
23  
70  
60  
25  
23  
V
= 50 Vdc, I = 100 mA, f = 1300 MHz  
DQ  
DD  
Pulse Width = 200, sec Duty Cycle = 10%  
21  
19  
22  
21  
50  
40  
V
= 50 V  
DD  
45 V  
G
ps  
40 V  
30  
20  
17  
20  
19  
35 V  
200  
30 V  
150  
15  
13  
11  
D
I
= 100 mA, f = 1300 MHz  
Pulse Width = 200 sec  
DQ  
25 V  
10  
0
18  
17  
Duty Cycle = 10%  
20 V  
100  
1
10  
100  
500  
0
50  
250  
300  
350  
400  
P
, OUTPUT POWER (WATTS) PEAK  
P , OUTPUT POWER (WATTS) PEAK  
out  
out  
Figure 6. Power Gain versus Output Power  
Figure 5. Power Gain and Drain Efficiency  
versus Output Power  
24  
23  
70  
70  
-- 3 0 _C  
V
= 50 Vdc  
= 100 mA  
DD  
V
= 50 V  
DD  
45 V  
I
DQ  
40 V  
60  
60  
50  
35 V  
f = 1300 MHz  
Pulse Width = 200 sec  
Duty Cycle = 10%  
G
ps  
30 V  
50  
22  
21  
20  
19  
25 V  
40  
30  
20 V  
85_C  
25_C  
40  
30  
20  
10  
T
= --30_C  
C
D
20  
25_C  
I
= 100 mA, f = 1300 MHz  
Pulse Width = 200 sec  
DQ  
10  
0
18  
17  
Duty Cycle = 10%  
85_C  
3
10  
100  
500  
0
50  
100  
150  
200  
250  
300  
350  
400  
P
, OUTPUT POWER (WATTS) PEAK  
P
, OUTPUT POWER (WATTS) PEAK  
out  
out  
Figure 7. Efficiency versus Output Power  
Figure 8. Power Gain and Drain Efficiency  
versus Output Power  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
5
TYPICAL CHARACTERISTICS — CW  
25  
24  
23  
22  
21  
20  
19  
60  
55  
50  
45  
10 mA  
G
I
= 700 mA  
300 mA  
ps  
DQ  
700 mA  
300 mA  
40  
35  
30  
25  
10 mA  
D
V
= 50 Vdc  
DD  
18  
17  
16  
f = 1300 MHz  
(1)  
T
= 61C  
20  
15  
C
20 40 60 80 100 120 140 160 180 200 220 240 260 280  
P
, OUTPUT POWER (WATTS) CW  
out  
1. Data for graph was collected in a water--cooled test  
fixture. The water inlet temperature = 25C.  
Figure 9. CW Power Gain and Drain Efficiency  
versus Output Power  
9
8
7
6
5
4
10  
10  
10  
10  
10  
10  
V
P
= 50 Vdc  
= 230 W CW  
= 53%  
DD  
out  
D
90  
110  
130  
150  
170  
190  
210  
230  
250  
T , JUNCTION TEMPERATURE (C)  
J
MTTF calculator available at http://www.freescale.com/rf/calculators.  
Figure 10. MTTF versus Junction Temperature — CW  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
6
Z = 10   
o
Z
source  
Z
load  
f = 1300 MHz  
f = 1300 MHz  
V
= 50 Vdc, I = 100 mA, P = 250 W Peak  
DQ out  
DD  
f
Z
Z
load  
source  
MHz  
1300  
5.32 + j4.11  
1.17 + j1.48  
Z
=
Test circuit impedance as measured from  
gate to ground.  
source  
Z
load  
=
Test circuit impedance as measured from  
drain to ground.  
Output  
Matching  
Network  
Device  
Under  
Test  
Input  
Matching  
Network  
Z
Z
source  
load  
Figure 11. Series Equivalent Source and Load Impedance — Pulse  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
7
Z19  
Z10  
R1  
V
V
SUPPLY  
BIAS  
+
+
+
C8  
C9  
C10 C11 C12  
C13  
C1  
C2  
C3  
Z4  
C4  
Z18  
RF  
OUTPUT  
Z9  
C7  
Z11  
Z12  
Z13  
Z14  
Z15 Z16  
Z17  
RF  
INPUT  
Z1  
Z2  
Z3  
Z5  
Z6  
Z7  
Z8  
C6  
C5  
DUT  
Z20  
Z21  
V
SUPPLY  
+
C19  
C18 C17 C16 C15  
C14  
Z1  
0.447x 0.063Microstrip  
0.030x 0.084Microstrip  
0.120x 0.063Microstrip  
0.855x 0.293Microstrip  
0.369x 0.825Microstrip  
0.203x 0.516Microstrip  
0.105x 0.530Microstrip  
0.105x 0.530Microstrip  
0.116x 0.050Microstrip  
0.122x 0.050Microstrip  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
Z17  
Z18, Z20  
Z19*, Z21*  
0.162x 1.160Microstrip  
0.419x 1.160Microstrip  
0.468x 0.994Microstrip  
0.131x 0.472Microstrip  
0.264x 0.222Microstrip  
0.500x 0.111Microstrip  
0.291x 0.063Microstrip  
0.105x 0.388Microstrip  
0.854x 0.052Microstrip  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z8  
Z9*  
Z10  
*Line length includes microstrip bends.  
Figure 12. MMRF1005HR5(HSR5) Application Circuit Schematic — 1300 MHz, CW  
Table 6. MMRF1005HR5(HSR5) Application Circuit Component Designations and Values — 1300 MHz, CW  
Part  
Description  
22 F, 35 V Tantalum Capacitors  
0.1 F, 50 V Chip Capacitors  
100 pF Chip Capacitors  
Part Number  
Manufacturer  
C1, C2  
T491X226K035AT  
Kemet  
C3, C12, C15  
C4, C6, C7, C8, C19  
C5  
CDR33BX104AKWS  
ATC800B101JT500XT  
ATC100B4R7CT500XT  
ATC100B102JT50XT  
ATC700B102FT50XT  
ATC200B103KT50XT  
MCGPR63V477M13X26--RH  
CRCW120615R0FKEA  
—
AVX  
ATC  
4.7 pF Chip Capacitor  
ATC  
C9, C18  
C10, C17  
C11, C16  
C13, C14  
R1  
1000 pF Chip Capacitors  
1000 pF Chip Capacitors  
10K pF Chip Capacitors  
ATC  
ATC  
ATC  
470 F, 63 V Electrolytic Capacitors  
15 , 1/4 W Chip Resistor  
Multicomp  
Vishay  
MTL  
PCB  
Rogers RO4350B, 0.030, = 3.66  
r
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
8
C8  
C10 C12  
C3  
C4  
C13  
R1  
C1 C2  
C9 C11  
C7  
C6  
C5  
C18 C16  
C19  
C14  
C17 C15  
Figure 13. MMRF1005HR5(HSR5) Application Circuit Component Layout — 1300 MHz, CW  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
9
PACKAGE DIMENSIONS  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
10  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
11  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
12  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
13  
PRODUCT DOCUMENTATION  
Refer to the following resources to aid your design process.  
Application Notes  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
Engineering Bulletins  
EB212: Using Data Sheet Impedances for RF LDMOS Devices  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
1
Dec. 2013  
Apr. 2015  
Initial Release of Data Sheet  
Tables 5 and 6, Test Circuit Component Designations and Values: updated PCB description to reflect most  
current board specifications from Rogers, pp. 3, 8  
Added CW application circuit for 1300 MHz as follows: schematic, component designations and values,  
and component layout, pp. 8--9  
MMRF1005HR5 MMRF1005HSR5  
RF Device Data  
Freescale Semiconductor  
14  
Information in this document is provided solely to enable system and software  
implementers to use Freescale products. There are no express or implied copyright  
licenses granted hereunder to design or fabricate any integrated circuits based on the  
information in this document.  
How to Reach Us:  
Home Page:  
freescale.com  
Web Support:  
freescale.com/support  
Freescale reserves the right to make changes without further notice to any products  
herein. Freescale makes no warranty, representation, or guarantee regarding the  
suitability of its products for any particular purpose, nor does Freescale assume any  
liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation consequential or incidental  
damages. “Typical” parameters that may be provided in Freescale data sheets and/or  
specifications can and do vary in different applications, and actual performance may  
vary over time. All operating parameters, including “typicals,” must be validated for  
each customer application by customer’s technical experts. Freescale does not convey  
any license under its patent rights nor the rights of others. Freescale sells products  
pursuant to standard terms and conditions of sale, which can be found at the following  
address: freescale.com/SalesTermsandConditions.  
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,  
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their  
respective owners.  
E 2013, 2015 Freescale Semiconductor, Inc.  
Document Number: MMRF1005H  
Rev. 1,4/2015

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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