MMRF1006HR5 [NXP]
RF Power Field Effect Transistors;
| 型号： | MMRF1006HR5 |
| 厂家： | 
NXP |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总13页 (文件大小：754K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMRF1006H
Rev. 1, 11/2015
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MMRF1006HR5
MMRF1006HSR5
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for pulse and CW wideband applications with frequencies up to
500 MHz. Devices are unmatched and are suitable for use in communications,
radar and industrial applications.
10--500 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
•
Typical Pulse Performance at 450 MHz: VDD = 50 Vdc, IDQ = 150 mA,
P
out = 1000 W Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 W Peak
Power
Features
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--1230H--4S
MMRF1006HR5
•
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
NI--1230S--4S
MMRF1006HSR5
PARTS ARE PUSH--PULL
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +120
-- 6 , + 1 0
-- 65 to +150
150
Unit
Drain--Source Voltage
V
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1)
T
J
225
°C
(2)
Total Device Dissipation @ T = 25°C, CW only
P
1333
W
C
D
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to Fig. 12, Transient Thermal Impedance, for information to calculate value for pulsed operation.
© Freescale Semiconductor, Inc., 2013, 2015. All rights reserved.
Table 2. Thermal Characteristics
(1)
Characteristic
Symbol
Value
Unit
Thermal Impedance, Junction to Case
Z
θ
0.03
°C/W
JC
Pulse: Case Temperature 80°C, 1000 W Peak, 100 μsec Pulse Width, 20% Duty Cycle,
(2)
450 MHz
Thermal Resistance, Junction to Case
R
θ
0.15
°C/W
JC
CW: Case Temperature 84°C, 1000 W CW, 352.2 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 2000 V
A, passes 125 V
IV, passes 2000 V
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(3)
Off Characteristics
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
—
120
—
—
—
—
—
10
—
μAdc
Vdc
GSS
GS
DS
Drain--Source Breakdown Voltage
(I = 300 mA, V = 0 Vdc)
V
(BR)DSS
D
GS
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
100
5
μAdc
mA
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(3)
Gate Threshold Voltage
(V = 10 Vdc, I = 1600 μAdc)
V
1
1.68
2.2
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(4)
Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
V
1.5
—
3.5
—
DD
D
(3)
Drain--Source On--Voltage
(V = 10 Vdc, I = 4 Adc)
V
0.28
GS
D
(3)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
3.3
147
506
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(4)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 450 MHz,
DD DQ out
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G
19
60
—
20
64
22
—
-- 9
dB
%
ps
Drain Efficiency
η
D
Input Return Loss
IRL
-- 1 8
dB
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
2. Refer to Fig. 12, Transient Thermal Impedance, for other pulsed conditions.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
2
B1
V
SUPPLY
+
+
V
BIAS
+
L3
C25 C26 C27 C28
C29 C30
C1
C2
C3
C4
L1
Z14
COAX3
COAX1
C22
C23
Z12 Z16 Z18
Z20 Z22
Z8
Z2
Z3
Z4 Z6
Z10
RF
RF
OUTPUT
INPUT
C5
Z1
Z24
DUT
C15 C16 C17 C18 C19
C24
C7 C8
Z5 Z7
C9
C10
Z11
C6
Z13
Z17 Z19
Z21 Z23
Z9
L2
C21
C20
Z15
L4
COAX2
COAX4
B2
V
SUPPLY
V
BIAS
+
+
+
C31 C32 C33 C34 C35 C36
C11
C12 C13 C14
Z1
0.366″ x 0.082″ Microstrip
0.170″ x 0.100″ Microstrip
0.220″ x 0.451″ Microstrip
0.117″ x 0.726″ Microstrip
0.792″ x 0.058″ Microstrip
0.316″ x 0.726″ Microstrip
0.262″ x 0.507″ Microstrip
Z14*, Z15*
Z16, Z17
Z18, Z19
Z20, Z21, Z22, Z23
Z24
0.764″ x 0.150″ Microstrip
0.290″ x 0.430″ Microstrip
0.100″ x 0.430″ Microstrip
0.080″ x 0.430″ Microstrip
0.257″ x 0.215″ Microstrip
Z2*, Z3*
Z4*, Z5*
Z6, Z7
Z8*, Z9*
Z10, Z11
Z12, Z13
PCB
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
* Line length includes microstrip bends
Figure 2. MMRF1006HR5(HSR5) Pulse Test Circuit Schematic — 450 MHz
Table 5. MMRF1006HR5(HSR5) Pulse Test Circuit Component Designations and Values — 450 MHz
Part
Description
47 Ω, 100 MHz Short Ferrite Beads
47 μF, 50 V Electrolytic Capacitors
0.1 μF Chip Capacitors
Part Number
Manufacturer
B1, B2
2743019447
Fair--Rite
C1, C11
476KXM063M
Illinois
C2, C12, C28, C34
CDR33BX104AKYS
C1812C224K5RAC
C1825C225J5RAC
ATC100B270JT500XT
27291SL
Kemet
C3, C13, C27, C33
220 nF, 50 V Chip Capacitors
2.2 μF, 50 V Chip Capacitors
27 pF Chip Capacitors
Kemet
C4, C14
C5, C6, C8, C15
C7, C10
C9
Kemet
ATC
0.8--8.0 pF Variable Capacitors
33 pF Chip Capacitor
Johanson Components
ATC100B330JT500XT
ATC100B120JT500XT
ATC100B100JT500XT
ATC100B9R1CT500XT
ATC100B8R2CT500XT
ATC100B241JT200XT
ATC
ATC
ATC
ATC
ATC
ATC
C16
12 pF Chip Capacitor
C17
10 pF Chip Capacitor
C18
9.1 pF Chip Capacitor
C19
8.2 pF Chip Capacitor
C20, C21, C22, C23,
C25, C32
240 pF Chip Capacitors
C24
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
2225X7R225KT3AB
EMVY630GTR331MMH0S
UT--141C--25
ATC
C26, C31
C29, C30, C35, C36
Coax1, 2, 3, 4
L1, L2
2.2 μF, 100 V Chip Capacitors
330 μF, 63 V Electrolytic Capacitors
25 Ω Semi Rigid Coax, 2.2″ Shield Length
2.5 nH, 1 Turn Inductors
ATC
Nippon Chemi--Con
Micro--Coax
Coilcraft
A01TKLC
L3, L4
43 nH, 10 Turn Inductors
B10TJLC
Coilcraft
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
3
C29
C27
C1
C2 C3
B1
C30
C28
C4
C25
C26
L1
COAX1
COAX3
L3
C22
C23
C19
C18
C7
C10
C5
C8 C9
C16
C15
C17
C6
L2
C20
C21
C24
L4
COAX2
COAX4
C32
C31
C35
C36
C33
B2
C14
C12
C11
C13
C34
Figure 3. MMRF1006HR5(HSR5) Pulse Test Circuit Component Layout — 450 MHz
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
1000
100
10
100
C
iss
C
oss
T = 200°C
J
T = 175°C
J
T = 150°C
J
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
10
V
GS
C
rss
T
= 25°C
C
1
1
0
10
20
30
40
50
1
10
V , DRAIN--SOURCE VOLTAGE (VOLTS)
DS
100
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
21
80
70
60
50
40
30
20
10
0
65
Ideal
P3dB = 60.70 dBm (1174.89 W)
V
= 50 Vdc
= 150 mA
DD
64
63
62
61
60
59
58
57
20
19
18
17
16
15
14
13
I
DQ
G
ps
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
P1dB = 60.33 dBm (1078.94 W)
Actual
η
D
V
= 50 Vdc
DD
I
= 150 mA
DQ
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
56
55
1
10
100
1000 2000
34
35
36
37
38
39
40
41
42
43
44
P
, OUTPUT POWER (WATTS) PEAK
P , INPUT POWER (dBm) PEAK
in
out
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Figure 7. Output Power versus Input Power
23
22
22
20
18
I
= 6000 mA
DQ
3600 mA
21
20
19
18
17
1500 mA
50 V
45 V
750 mA
375 mA
16
14
40 V
35 V
V
= 30 V
DD
V
= 50 Vdc
DD
I
= 150 mA, f = 450 MHz
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
150 mA
Pulse Width = 100 μsec
Duty Cycle = 20%
12
10
100
, OUTPUT POWER (WATTS) PEAK
1000
2000
0
200
400
600
800
1000
1200
1400
P
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 9. Power Gain versus Output Power
Figure 8. Power Gain versus Output Power
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
65
60
55
50
45
40
35
22
100
V
= 50 Vdc
= 150 mA
DD
T
= --30_C
21
90
80
70
60
50
C
T
= --30_C
85_C
C
I
DQ
20 f = 450 MHz
25_C
Pulse Width = 100 μsec
Duty Cycle = 20%
19
18
17
16
15
14
85_C
25_C
G
ps
40
30
20
10
0
V
= 50 Vdc
DD
η
D
I
= 150 mA
DQ
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
13
12
20
25
30
35
40
45
1
10
100
1000 2000
P , INPUT POWER (dBm) PEAK
in
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 10. Output Power versus Input Power
Figure 11. Power Gain and Drain Efficiency
versus Output Power
9
8
7
10
0.18
0.16
0.14
0.12
0.1
f = 450 MHz
D = 0.7
V
P
η
= 50 Vdc
= 1000 W CW
= 67%
DD
out
10
10
D
P
D
t
1
D = 0.5
D = 0.3
0.08
0.06
0.04
0.02
0
t
2
T
Z
= Case Temperature
C
JC
6
10
10
= Thermal Impedance (from graph)
= Peak Power Dissipation
P
D
D = 0.1
D = Duty Factor = t /t
1 2
2
θ
t = Pulse Width; t = Pulse Period
1
J
5
T (peak) = P * Z + T
D
JC
C
90
110
130
150
170
190
210
230
250
0.00001 0.0001
0.001
0.01
0.1
1
10
T , JUNCTION TEMPERATURE (°C)
J
RECTANGULAR PULSE WIDTH (S)
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. Transient Thermal Impedance
NOTE: For pulse applications or CW conditions, use the MTTF
calculator referenced above.
Figure 13. MTTF versus Junction Temperature -- CW
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
6
Z = 2 Ω
o
f = 450 MHz
f = 450 MHz
Z
source
Z
load
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
450
0.86 + j1.06
1.58 + j1.22
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 14. Series Equivalent Source and Load Impedance — 450 MHz
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
7
PACKAGE DIMENSIONS
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
8
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
9
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
10
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
•
•
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Dec. 2013
Nov. 2015
•
•
Initial Release of Data Sheet
Maximum Ratings table: changed Drain--Source Voltage value from +110 to +120 to reflect the true
performance of the device, p. 1
•
Off Characteristics: changed Drain--Source Breakdown Voltage minimum value from 110 to 120 to reflect
the true performance of the device, p. 2
MMRF1006HR5 MMRF1006HSR5
RF Device Data
Freescale Semiconductor, Inc.
12
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
How to Reach Us:
Home Page:
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Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
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Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their
respective owners.
E 2013, 2015 Freescale Semiconductor, Inc.
Document Number: MMRF1006H
Rev. 1,11/2015
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