MRF284SR1 [NXP]

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN;


型号：	MRF284SR1
厂家：	NXP
描述：	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN 放大器 CD 晶体管
文件：	总12页 (文件大小：420K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF284/D

The RF Sub–Micron MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFETs

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Designed for PCN and PCS base station applications with frequencies from

1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

applications. To be used in Class A and Class AB for PCN–PCS/cellular radio

and wireless local loop.

2000 MHz, 30 W, 26 V

LATERAL N–CHANNEL

BROADBAND

• Specified Two–Tone Performance @ 2000 MHz, 26 Volts

Output Power = 30 Watts PEP

Power Gain = 9 dB

RF POWER MOSFETs

Efficiency = 30%

Intermodulation Distortion = –29 dBc

• Typical Single–Tone Performance at 2000 MHz, 26 Volts

Output Power = 30 Watts CW

Power Gain = 9.5 dB

Efficiency = 45%

CASE 360B–05, STYLE 1

NI–360

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW

Output Power

MRF284R1

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

CASE 360C–05, STYLE 1

NI–360S

MRF284SR1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

87.5

0.5

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

2.0

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

—

1.0

Vdc

µAdc

(BR)DSS

(V = 0, I = 10 µAdc)

Zero Gate Voltage Drain Current

(V = 20 Vdc, V = 0)

DSS

Gate–Source Leakage Current

(V = 20 Vdc, V = 0)

GSS

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 11

MOTOROLA RF DEVICE DATA

MRF284R1 MRF284SR1

 Motorola, Inc. 2002

ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

3.0

—

3.0

4.0

0.3

1.5

4.0

5.0

0.6

—

Vdc

GS(th)

(V = 10 Vdc, I = 150 µAdc)

Gate Quiescent Voltage

(V = 26 Vdc, I = 200 mAdc)

GS(q)

Drain–Source On–Voltage

(V = 10 Vdc, I = 1.0 Adc)

DS(on)

Forward Transconductance

(V = 10 Vdc, I = 1.0 Adc)

—

DYNAMIC CHARACTERISTICS

Input Capacitance

(V = 26 Vdc, V = 0, f = 1.0 MHz)

—

iss

Output Capacitance

(V = 26 Vdc, V = 0, f = 1.0 MHz)

oss

Reverse Transfer Capacitance

(V = 26 Vdc, V = 0, f = 1.0 MHz)

1.4

rss

FUNCTIONAL TESTS (in Motorola Test Fixture, 50 ohm system)

Common–Source Power Gain

—

10.5

—

(V = 26 Vdc, P = 30 W, I = 200 mA,

out

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Drain Efficiency

(V = 26 Vdc, P = 30 W, I = 200 mA,

out

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Intermodulation Distortion

IMD

IRL

–32

–15

10.4

–29

–9

—

dBc

(V = 26 Vdc, P = 30 W, I = 200 mA,

out

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Input Return Loss

(V = 26 Vdc, P = 30 W, I = 200 mA,

out

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Common–Source Amplifier Power Gain

(V = 26 Vdc, P = 30 W PEP, I = 200 mA,

out

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Drain Efficiency

—

8.5

—

(V = 26 Vdc, P = 30 W PEP, I = 200 mA,

out

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Intermodulation Distortion

IMD

IRL

–34

–15

9.5

—

dBc

(V = 26 Vdc, P = 30 W PEP, I = 200 mA,

out

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Input Return Loss

–9

—

(V = 26 Vdc, P = 30 W PEP, I = 200 mA,

out

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Common–Source Amplifier Power Gain

(V = 26 Vdc, P = 30 W CW, I = 200 mA,

out

f1 = 2000.0 MHz)

Drain Efficiency

—

(V = 26 Vdc, P = 30 W CW, I = 200 mA,

out

f1 = 2000.0 MHz)

Output Mismatch Stress

(V = 26 Vdc, P = 30 W CW, I = 200 mA,

f1 = 2000.0 MHz, VSWR = 10:1,

at All Phase Angles)

out

No Degradation In Output Power

MRF284R1 MRF284SR1

MOTOROLA RF DEVICE DATA

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0.530″ x 0.080″ Microstrip

0.255″ x 0.080″ Microstrip

0.600″ x 0.080″ Microstrip

0.525″ x 0.080″ Microstrip

0.015″ x 0.325″ Microstrip

0.085″ x 0.325″ Microstrip

0.165″ x 0.325″ Microstrip

0.110″ x 0.515″ Microstrip

0.095″ x 0.515″ Microstrip

0.050″ x 0.515″ Microstrip

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Raw Board

Material

0.155″ x 0.515″ Microstrip

0.120″ x 0.325″ Microstrip

0.150″ x 0.325″ Microstrip

0.010″ x 0.325″ Microstrip

0.505″ x 0.080″ Microstrip

0.865″ x 0.080″ Microstrip

0.525″ x 0.080″ Microstrip



0.030″ Glass Teflon , 2 oz Copper,

3″ x 5″ Dimensions,

Z10

Arlon GX0300–55–22, ε = 2.55

Figure 1. 1.93–2.0 GHz Broadband Test Circuit Schematic

MOTOROLA RF DEVICE DATA

MRF284R1 MRF284SR1

Table 1. 1.93 – 2.0 GHz Broadband Test Circuit Component Designations and Values

Designators

Description

Ferrite Beads, Round, Ferroxcube #56–590–65–3B

B1 – B3

C1, C2, C8

0.8–8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL

22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394

0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS

220 pF Chip Capacitor, B Case, ATC #100B221KP500X

1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X

5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X

1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X

2.7 pF Chip Capacitor, B Case, ATC #100B2R7CCA500X

0.6–4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL

200 pF Chip Capacitors, B Case, ATC #100B201KP500X

10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394

4 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (12.5 nH), Coilcraft #A04T–5

2 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (5.0 nH), Coilcraft #A02T–5

12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT

560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″

C3, C17

C4, C14

C6, C12

C7, C13

C10

C11

C15, C16

C18

L1, L2

R1, R2, R3, R5, R6, R7

W1, W2, W3

WS1, WS2

Solid Copper Buss Wire, 16 AWG

Berrylium Copper Wear Blocks 0.005″ x 0.250″ x 0.250″

Brass Banana Jack and Nut

Red Banana Jack and Nut

Green Banana Jack and Nut

Type “N” Jack Connectors, Omni–Spectra #3052–1648–10

4–40 Ph Head Screws, 0.125″ Long

4–40 Ph Head Screws, 0.188″ Long

4–40 Ph Head Screws, 0.312″ Long

4–40 Ph Rec. Hd. Screws, 0.438″ Long



RF Circuit Board

3″ x 5″ Copper Clad PCB, Glass Teflon

MRF284R1 MRF284SR1

MOTOROLA RF DEVICE DATA

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MRF284

Rev–0

Figure 2. 1.93–2.0 GHz Broadband Test Circuit Component Layout

MRF284

Rev–0

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Figure 3. MRF284 Test Circuit Photomaster

(Reduced 18% in printed data book, DL110/D)

MOTOROLA RF DEVICE DATA

MRF284R1 MRF284SR1

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Z10

0.363″ x 0.080″ Microstrip

0.080″ x 0.080″ Microstrip

0.916″ x 0.080″ Microstrip

0.517″ x 0.080″ Microstrip

0.050″ x 0.325″ Microstrip

0.071″ x 0.325″ Microstrip

0.125″ x 0.325″ Microstrip

0.210″ x 0.515″ Microstrip

Z11

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0.235″ x 0.325″ Microstrip

0.02″ x 0.325″ Microstrip

0.510″ x 0.080″ Microstrip

0.990″ x 0.080″ Microstrip

0.390″ x 0.080″ Microstrip



Raw Board

Material

0.030″ Glass Teflon , 2 oz Copper,

3″ x 5″ Dimensions,

Arlon GX0300–55–22, ε = 2.55

Figure 4. 2.0 GHz Class A Test Circuit Schematic

MRF284R1 MRF284SR1

MOTOROLA RF DEVICE DATA

Table 2. 2.0 GHz Class A Test Circuit Component Designations and Values

Designators

Description

B1 – B5

C1, C9, C16

C2, C13

C3, C14

C4, C11

Ferrite Beads, Round, Ferroxcube # 56–590–65–3B

100 µF, 50 V Electrolytic Capacitors, Mallory #SME50VB101M12X25L

51 pF Chip Capacitors, B Case, ATC #100B510JCA500x

10 pF Chip Capacitors, B Case, ATC #100B100JCA500X

12 pF Chip Capacitors, B Case, ATC #100B120JCA500X

0.8 – 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL

4.7 pF Chip Capacitor, B Case, ATC #100B4R7CCA500X

C7, C15

91 pF Chip Capacitors, B Case, ATC #100B910KP500X

1000 pF Chip Capacitor, B Case, ATC #100B102JCA50X

C10

0.1 µF Chip Capacitor, Kemet #CDR33BX104AKWS

C12, C17

0.6 – 4.5 pF Variable Capacitors, Johansen Gigatrim #27271SL

4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH

5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID, 0.128″ Long, 12.5 nH

9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH

1000 Ω Potentiometer, 1/2 W, 10 Turns, Bourns

L3, L4

Transistor, NPN, Motorola P/N: MJD31, Case 369A–10

Transistor, PNP, Motorola P/N: MJD32, Case 369A–10

360 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B361JT

2 x 12 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B122JT

1 Ω, Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00

4 x 6.8 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B682JT

2 x 1500 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B152JT

270 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B271JT

12 Ω, Fixed Film Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT

R7 – R11

MOTOROLA RF DEVICE DATA

MRF284R1 MRF284SR1

TYPICAL CHARACTERISTICS

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Figure 5. Output Power & Power Gain

versus Input Power

Figure 6. Output Power versus Frequency

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Figure 7. Intermodulation Distortion Products

versus Output Power

Figure 8. Power Gain and Intermodulation

Distortion versus Supply Voltage

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ꢊ

ꢙ

ꢹ

ꢪ

ꢊ

ꢙ

ꢹ

ꢪ

ꢍ

ꢸ ꢊ ꢑ ꢍ ꢫꢝ

ꢘ

ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢮꢙ ꢰꢱ ꢲ

ꢉ

ꢙ

ꢹ

ꢪ

ꢘ

ꢂ

ꢘ

ꢸ ꢌ ꢙꢙ ꢹꢪ

ꢤ

ꢉ

ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢮꢉ ꢰꢱ ꢲ

ꢊ

ꢗ

ꢙ ꢮ ꢉ

ꢙ

ꢮ

ꢉ

ꢮ

ꢙ

ꢉ

ꢙ

ꢉ

ꢮ

ꢙ

ꢉ

ꢙ

ꢄ ꢧ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇꢒꢩ ꢀ ꢜ ꢒꢪꢆꢆ ꢛꢢ ꢄ ꢩꢄ

ꢳꢴ ꢵ

ꢄ ꢧ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢒꢩ ꢀ ꢜꢒꢪꢆꢆꢛ ꢢ ꢄ ꢩ ꢄ

ꢳ ꢴ ꢵ

Figure 9. Intermodulation Distortion

versus Output Power

Figure 10. Power Gain versus Output Power

MRF284R1 MRF284SR1

MOTOROLA RF DEVICE DATA

ꢸ

ꢊ

ꢑ

ꢍ

ꢫ

ꢝ

ꢶ

ꢉ

ꢙ

ꢋ

ꢻ

ꢫ

ꢇ

ꢻ

ꢫ

ꢠ

ꢻ

ꢋ ꢮꢙ

ꢊ ꢮꢙ

ꢶ

ꢂ

ꢰ

ꢘ

ꢶ

ꢊ ꢙ

ꢋ ꢙ

TYPICAL CHARACTERISTICS

ꢋ

ꢊ

ꢉ ꢙꢙ

ꢆ ꢸ ꢕ ꢐ°ꢏ

ꢯ ꢟꢞꢭ ꢺꢠ

ꢏ

ꢬ ꢦ ꢦ

ꢆ ꢸ ꢉꢙ ꢙ°ꢏ

ꢯ ꢟꢞꢭ ꢺꢠ

ꢏ

ꢳꢦ ꢦ

ꢉ ꢙ

ꢉ

ꢙ

ꢆ ꢸ ꢉ ꢕꢐ °ꢏ

ꢏ

ꢻ ꢦ ꢦ

ꢾ

ꢉ

ꢙ

ꢌ

ꢗ

ꢉꢊ

ꢉꢑ

ꢊꢙ

ꢊꢌ

ꢊ ꢗ

ꢙ

ꢌ

ꢗ

ꢉ ꢊ

ꢍ ꢧ ꢘꢀꢪ ꢂ ꢃ ꢛ ꢇ ꢅꢀꢏꢩ ꢍ ꢇ ꢖꢆꢪ ꢎ ꢩ ꢜꢍ ꢇ ꢖꢆꢛ ꢢ

ꢘ ꢛ

ꢉ ꢑ

ꢊ ꢙ

ꢊ ꢌ

ꢊ ꢗ

ꢍ

ꢘ

ꢧ ꢘꢀ ꢪꢂ ꢃ ꢛ ꢅꢄ ꢄꢖꢣ ꢍ ꢇꢖꢆꢪ ꢎꢩ ꢜ ꢍꢫ ꢝꢢ

ꢘ

Figure 11. DC Safe Operating Area

Figure 12. Capacitance versus

Drain Source Voltage

ꢑ ꢙ

ꢐ ꢙ

ꢌ ꢙ

ꢋ ꢙ

ꢊ ꢙ

ꢉ ꢙ

ꢙ

ꢉ ꢉ

ꢉ ꢙ

ꢚ

ꢌ ꢐ

ꢌ ꢙ

ꢋ ꢐ

ꢋ ꢙ

ꢶꢋ ꢊ

ꢎ

ꢥ ꢦ

ꢁ ꢅꢃ ꢘꢪ ꢰꢩꢃ ꢆꢪ ꢖ

ꢍ

ꢘ

ꢵ

ꢗ

ꢄ

ꢳ

ꢸ ꢋ ꢙ ꢒ ꢜꢄ ꢩ ꢄ ꢢꢧ ꢂ ꢸ ꢊ ꢙꢙ ꢹꢪ

ꢘ ꢤ

ꢴ

ꢆꢿꢳ ꢶ ꢆꢳ ꢭꢠ

ꢁꢻ ꢠꣀ ꢴ ꢠꢭ ꢝꣁ ꢘꢠ ꢟꢵ ꢞ ꢸ ꢉ ꢙꢙ ꣂꢱꢲ

ꢕ

ꢑ

ꢶ ꢷꢌ ꢙ

ꢶ ꢷ ꢐꢙ

ꢑ ꢙ

ꢶꢕ ꢙ

ꢗ ꢙ

ꢶꢽ ꢚꢙ

ꢍ

ꢸ ꢊꢑ ꢍ ꢫꢝ

ꢘ

ꢐ

ꢶꢋ ꢑ

ꢶꢌ ꢙ

ꢘ

ꢂ

ꢸ ꢉꢮ ꢗ ꢪ ꢫꢝ

ꢤ

ꢯ ꢸ ꢊꢙ ꢙꢙꢮ ꢙ ꢰꢱ ꢲ

ꢘ

ꢌ

ꢋ

ꢉ

ꢍ ꢛ ꢒꢀ

ꢉ ꢚꢌ ꢙ

ꢯ ꢸ ꢊꢙ ꢙꢙꢮ ꢉ ꢰꢱ ꢲ

ꢊ

ꢉ

ꢮ

ꢙ

ꢐ

ꢉ ꢙ ꢉ ꢐ ꢊꢙ ꢊꢐ ꢋꢙ ꢋꢐ ꢌꢙ ꢌ ꢐ ꢐꢙ ꢐ ꢐ ꢑ ꢙ

ꢄ ꢧ ꢂ ꢃꢄ ꢅꢆ ꢄ ꢇꢒꢩ ꢀ ꢜ ꢫꢔ ꢹ ꢢ

ꢉ

ꢚ

ꢊ

ꢙ

ꢉ

ꢚ

ꢑ

ꢙ

ꢉ

ꢚ

ꢗ

ꢙ

ꢊ

ꢙ

ꢯ

ꢧ

ꢁ

ꢀ

ꢩ

ꢤ

ꢅ

ꢩ

ꢃ

ꢏ

ꢣ

ꢜ

ꢰ

ꢱ

ꢲ

ꢢ

ꢬ

ꢭ

Figure 13. Class A Third Order Intercept Point

Figure 14. 1.92–2.0 GHz Broadband Circuit Performance

ꢉ

ꢮ

ꢩ

ꢓ

ꢉ

ꢙ

ꢉꢮ ꢩꢓ ꢙ ꢚ

ꢉꢮ ꢩꢓ ꢙ ꢗ

ꢉꢮ ꢩꢓ ꢙ ꢕ

ꢉꢮ ꢩꢓ ꢙ ꢑ

ꢉꢮ ꢩꢓ ꢙ ꢐ

ꢉꢮ ꢩ ꢓꢙ ꢌ

ꢙ

ꢐ

ꢙ

ꢉ

ꢙ

ꢉ

ꢐ

ꢙ

ꢊ

ꢙ

ꢊ

ꢐ

ꢙ

ꢆ ꢧ ꢾꢅꢃ ꢏꢆꢂ ꢇ ꢃ ꢆꢩ ꢰꢄ ꢩ ꢀꢪꢆꢅꢀ ꢩ ꢜ°ꢏꢢ

ꢾ

ꢊ

ꢆꢼ ꢬꢦ ꢺꢻ ꢞ ꢥꢼ ꢫꢬ ꢦꢥꢟ ꢞ ꣁꢦ ꢝꢞ ꢟꢝꢴ ꢟꢞ ꢵ ꢠꢫ ꢰꢆꢔ ꢁ ꢬꢭ ꢼ ꢳꢴ ꢻꢦ ꣄ ꢞ ꢹꢥ ꢠꢻ ꢠ ꢫ ꢻꢞ ꢬꢭ ꢝꢴ ꢻꢻ ꢠꢭ ꢵ ꢮ

ꢖꢬ ꢯ ꢠ ꢵ ꢠꢦꢵ ꢦ ꢞꢵ ꢠꢟ ꢠꣅꢞ ꢵꢠ ꢫ ꢵ ꢠꢹ ꢥ ꢠꢻ ꢞꢵ ꢴ ꢻꢠ ꢼ ꢞꣅꢠ ꢝꢳ ꢻꢻ ꢠꢟ ꢞꢵ ꢠ ꢫ ꢵ ꢳ ꣆ ꢠꢵ ꢵ ꢠ ꢻ ꢵ ꢼ ꢞꢭ ꢉ ꢙꣃ

ꢊ

ꢳꢯ ꢵ ꢼꢠ ꢵ ꢼꢠꢳ ꢻ ꢠꢵꢬ ꢝꢞ ꢟ ꢥꢻ ꢠꢫ ꢬꢝꢵ ꢬ ꢳꢭ ꢯ ꢳ ꢻ ꢹꢠ ꢵ ꢞ ꢟ ꢯ ꢞ ꢬꢟꢴ ꢻꢠ ꢮ ꢘꢬ ꣅꢬꢫ ꢠ ꢰꢆ ꢔꢁ ꢯ ꢞꢝ ꢵꢳ ꢻ ꣆ ꣁ ꢂ

ꢯ ꢳꢻ ꢰ ꢆꢔ ꢁ ꢬ ꢭ ꢞ ꢥꢞ ꢻ ꢵꢬ ꢝꢴ ꢟꢞ ꢻ ꢞ ꢥꢥ ꢟꢬ ꢝꢞꢵ ꢬ ꢳꢭ ꢮ

ꢘ

Figure 15. MTBF Factor versus Junction Temperature

MOTOROLA RF DEVICE DATA

MRF284R1 MRF284SR1

ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢰꢱ ꢲ

ꢈ

ꢬ

ꢭ

ꢈ ꢸ ꢐ Ω

ꢳ

ꢈ

꣇

ꢇ ꢖ

ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢰꢱ ꢲ

ꢉ ꢗꢙ ꢙ ꢰꢱ ꢲ

ꢍ

ꢏ

ꢸ ꢊꢑ ꢍ ꢧ ꢂ ꢸ ꢊ ꢙꢙ ꢹꢪ ꢧ ꢄ ꢸ ꢉ ꢐ ꢒ ꢪꣅꢺ ꢮ

ꢘ ꢤ ꢳ ꢴ ꢵ

ꢏ

Z (1)

MHz

Ohms

1800

1860

1900

1960

2000

1.0 + j0.4

1.0 + j0.8

1.0 + j1.1

1.0 + j1.4

1.0 + j2.3

2.1 – j0.4

2.2 + j0.2

2.3 + j0.5

2.5 + j0.9

2.6 + j0.92

Z (1) = Complex conjugate of source impedance.

* = Conjugate of the optimum load impedance at

given output power, voltage, bias current and

frequency.

ꢇ ꢴ ꢵꢥ ꢴ ꢵ

ꢰꢞ ꢵ ꢝꢼ ꢬꢭ ꢺ

ꢃꢠ ꢵ ꢿꢳ ꢻꣂ

ꢂ ꢭꢥꢴ ꢵ

ꢰ ꢞꢵ ꢝꢼꢬ ꢭꢺ

ꢃꢠ ꢵ ꢿꢳꢻ ꣂ

ꢘꢠ ꣅꢬꢝꢠ

ꢅꢭ ꢫ ꢠꢻ ꢆꢠ ꢦꢵ

Figure 16. Series Equivalent Input and Output Impedence

MRF284R1 MRF284SR1

MOTOROLA RF DEVICE DATA

PACKAGE DIMENSIONS

ꢰ

ꢔ

ꢃ ꢇ ꢆꢩ ꢛ ꢡ

ꢉꢮ ꢂ ꢃ ꢆꢩ ꢀ ꢄꢀ ꢩ ꢆ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂ ꢇꢃ ꢛ ꢪ ꢃꢘ ꢆꢇ ꢖꢩ ꢀ ꢪꢃ ꢏ ꢩꢛ

ꢄ ꢩꢀ ꢪ ꢛꢰꢩ ꢣ ꢉꢌꢮ ꢐꢰꢶꢉ ꢚꢚꢌꢮ

ꢞ

ꢆ ꢪ

ꢊꢮ ꢏ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢎ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂꢇ ꢃ ꢡ ꢂ ꢃ ꢏꢱ ꢮ

ꢋꢮ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂꢇ ꢃ ꢱ ꢂ ꢛ ꢰꢩ ꢪꢛ ꢅ ꢀ ꢩꢘ ꢙꢮ ꢙꢋꢙ ꢜꢙ ꢮꢕꢑ ꢊꢢ ꢪ ꢒ ꢪꢣ

ꢁ ꢀ ꢇꢰ ꢄꢪ ꢏ ꣈ꢪ ꢎ ꢩ ꢔ ꢇꢘ ꢣꢮ

INCHES

DIM MIN MAX

MILLIMETERS

MIN

ꢊꢙꢮ ꢉꢚ

ꢐꢮ ꢕꢊ

ꢋꢮ ꢉꢗ

ꢐꢮ ꢋꢋ

ꢉꢮ ꢌꢙ

ꢙꢮ ꢉꢙ

MAX

ꢊꢙꢮ ꢌ ꢐ

ꢐꢮ ꢚ ꢕ

ꢌꢮ ꢌ ꢐ

ꢐꢮ ꢐ ꢚ

ꢉꢮ ꢑ ꢐ

ꢙꢮ ꢉ ꢐ

(FLANGE)

ꢙꢮ ꢕꢚꢐ

ꢙꢮ ꢊꢊꢐ

ꢙꢮ ꢉꢊꢐ

ꢙꢮ ꢊꢉꢙ

ꢙꢮ ꢙꢐꢐ

ꢙꢮ ꢙꢙꢌ

ꢙꢮ ꢗꢙꢐ

ꢙꢮ ꢊꢋꢐ

ꢙꢮ ꢉꢕꢐ

ꢙꢮ ꢊꢊꢙ

ꢙꢮ ꢙꢑꢐ

ꢙꢮ ꢙꢙꢑ

2X K

^2XD

꣆ ꣆ ꣆

ꢰ

ꢆ ꢪ

ꢔ

(LID)

ꢰ

ꢔ

ꢝꢝꢝ

ꢆ ꢪ

ꢙꢮ ꢐꢑꢊ ꢨꢔ ꢛꢏ

ꢉꢌꢮ ꢊꢗ ꢨꢔ ꢛꢏ

ꢙꢮ ꢙꢕꢕ

ꢙꢮ ꢊꢊꢙ

ꢙꢮ ꢋꢐꢐ

ꢙꢮ ꢋꢐꢕ

ꢙꢮ ꢉꢊꢐ

ꢙꢮ ꢊꢊꢕ

ꢙꢮ ꢊꢊꢐ

ꢙꢮ ꢙꢗꢕ

ꢙꢮ ꢊꢐꢙ

ꢙꢮ ꢋꢑꢐ

ꢙꢮ ꢋꢑꢋ

ꢙꢮ ꢉꢋꢐ

ꢙꢮ ꢊꢋꢋ

ꢙꢮ ꢊꢋꢐ

ꢉꢮ ꢚꢑ

ꢐꢮ ꢐꢚ

ꢚꢮ ꢙꢊ

ꢚꢮ ꢙꢕ

ꢋꢮ ꢉꢗ

ꢐꢮ ꢕꢕ

ꢐꢮ ꢕꢊ

ꢊꢮ ꢊ ꢉ

ꢑꢮ ꢋ ꢐ

ꢚꢮ ꢊ ꢕ

ꢚꢮ ꢊ ꢊ

ꢋꢮ ꢌ ꢋ

ꢐꢮ ꢚ ꢊ

ꢐꢮ ꢚ ꢕ

ꢰ

ꢔ

ꢝꢝꢝ

ꢆ ꢪ

(LID)

aaa

bbb

ccc

ꢙꢮ ꢙꢙꢐ ꢨꢀ ꢩ ꢁ

ꢙꢮ ꢙꢉꢙ ꢨꢀ ꢩ ꢁ

ꢙꢮ ꢙꢉꢐ ꢨꢀ ꢩ ꢁ

ꢙꢮ ꢉꢋꢨ ꢀ ꢩꢁ

ꢙꢮ ꢊꢐꢨ ꢀ ꢩꢁ

ꢙꢮ ꢋꢗꢨ ꢀ ꢩꢁ

(INSULATOR)

ꢰ

ꢔ

ꢞ ꢞꢞ

ꢆ

ꢪ

SEATING

PLANE

ꢛ

ꢆ

ꢣ

ꢖ

ꢩ

ꢉ

ꢡ

ꢄ ꢂꢃ ꢉꢮ ꢘ ꢀ ꢪꢂ ꢃ

ꢊꢮ ꢎ ꢪꢆ ꢩ

ꢋꢮ ꢛ ꢇꢅ ꢀ ꢏ ꢩ

ꢰ

ꢔ

꣆

ꢆ ꢪ

(INSULATOR)

CASE 360B–05

ISSUE F

NI–360

MRF284R1

(FLANGE)

ꢃ ꢇ ꢆꢩ ꢛ ꢡ

ꢉꢮ ꢂ ꢃ ꢆꢩ ꢀ ꢄꢀ ꢩ ꢆ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂ ꢇꢃ ꢛ ꢪ ꢃꢘ ꢆꢇ ꢖꢩ ꢀ ꢪꢃ ꢏ ꢩꢛ

ꢄ ꢩꢀ ꢪ ꢛꢰꢩ ꢣ ꢉꢌꢮ ꢐꢰꢶꢉ ꢚꢚꢌꢮ

ꢊꢮ ꢏ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢎ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂꢇ ꢃ ꢡ ꢂ ꢃ ꢏꢱ ꢮ

ꢋꢮ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂꢇ ꢃ ꢱ ꢂ ꢛ ꢰꢩ ꢪꢛ ꢅ ꢀ ꢩꢘ ꢙꢮ ꢙꢋꢙ ꢜꢙ ꢮꢕꢑ ꢊꢢ ꢪ ꢒ ꢪꢣ

ꢁ ꢀ ꢇꢰ ꢄꢪ ꢏ ꣈ꢪ ꢎ ꢩ ꢔ ꢇꢘ ꢣꢮ

^2XK

(FLANGE)

^2XD

ꢰ

꣆

ꢆ

ꢪ

ꢔ

INCHES

DIM MIN MAX

MILLIMETERS

MIN

ꢚꢮ ꢐꢋ

ꢐꢮ ꢕꢊ

ꢊꢮ ꢑꢕ

ꢐꢮ ꢋꢋ

ꢙꢮ ꢗꢚ

ꢙꢮ ꢉꢙ

ꢉꢮ ꢌꢐ

ꢊꢮ ꢉꢑ

ꢚꢮ ꢙꢊ

ꢚꢮ ꢙꢕ

ꢐꢮ ꢕꢕ

ꢐꢮ ꢕꢊ

MAX

ꢚꢮ ꢕꢗ

ꢐꢮ ꢚꢕ

ꢋꢮ ꢚꢌ

ꢐꢮ ꢐꢚ

ꢉꢮ ꢉꢌ

ꢙꢮ ꢉꢐ

ꢉꢮ ꢕꢙ

ꢊꢮ ꢚꢊ

ꢚꢮ ꢊꢕ

ꢚꢮ ꢊꢊ

ꢐꢮ ꢚꢊ

ꢐꢮ ꢚꢕ

(LID)

ꢙꢮ ꢋꢕꢐ

ꢙꢮ ꢊꢊꢐ

ꢙꢮ ꢉꢙꢐ

ꢙꢮ ꢊꢉꢙ

ꢙꢮ ꢙꢋꢐ

ꢙꢮ ꢙꢙꢌ

ꢙꢮ ꢙꢐꢕ

ꢙꢮ ꢙꢗꢐ

ꢙꢮ ꢋꢐꢐ

ꢙꢮ ꢋꢐꢕ

ꢙꢮ ꢊꢊꢕ

ꢙꢮ ꢊꢊꢐ

ꢙꢮ ꢋꢗꢐ

ꢙꢮ ꢊꢋꢐ

ꢙꢮ ꢉꢐꢐ

ꢙꢮ ꢊꢊꢙ

ꢙꢮ ꢙꢌꢐ

ꢙꢮ ꢙꢙꢑ

ꢙꢮ ꢙꢑꢕ

ꢙꢮ ꢉꢉꢐ

ꢙꢮ ꢋꢑꢐ

ꢙꢮ ꢋꢑꢋ

ꢙꢮ ꢊꢋ

ꢰ

ꢝ

ꢆ

ꢪ

ꢔ

(LID)

ꢰ

ꢔ

ꢝ

ꢆ

ꢪ

(INSULATOR)

ꢙ

ꢮ

ꢊ

ꢋ

ꢐ

aaa

bbb

ccc

ꢙꢮ ꢙꢙꢐ ꢨꢀ ꢩ ꢁ

ꢙꢮ ꢙꢉꢙ ꢨꢀ ꢩ ꢁ

ꢙꢮ ꢙꢉꢐ ꢨꢀ ꢩ ꢁ

ꢙꢮ ꢉꢋꢨ ꢀ ꢩꢁ

ꢙꢮ ꢊꢐꢨ ꢀ ꢩꢁ

ꢙꢮ ꢋꢗꢨ ꢀ ꢩꢁ

ꢰ

ꢔ

ꢞ

ꢆ

ꢪ

SEATING

PLANE

PIN 3

(INSULATOR)

ꢛ ꢆꢣ ꢖꢩ ꢉꢡ

ꢰ

꣆ ꣆꣆

ꢆ

ꢪ

ꢔ

ꢄ ꢂꢃ ꢉꢮ ꢘ ꢀ ꢪꢂ ꢃ

ꢊꢮ ꢎ ꢪꢆ ꢩ

ꢋꢮ ꢛ ꢇꢅ ꢀ ꢏ ꢩ

CASE 360C–05

ISSUE D

NI–360S

MRF284SR1

MOTOROLA RF DEVICE DATA

MRF284R1 MRF284SR1

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MOTOROLA and the

logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.

E Motorola, Inc. 2002.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447

JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334

Technical Information Center: 1–800–521–6274

HOME PAGE: http://www.motorola.com/semiconductors/

MRF284R1 MRF284SR1

MOTOROLA RF DEVICE DAMTRAF284/D

◊

MRF284SR1 [NXP]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E