MRF8P20160HSR3 [NXP]
RF Power Field Effect Transistors;
| 型号： | MRF8P20160HSR3 |
| 厂家： | 
NXP |
| 描述： | RF Power Field Effect Transistors 放大器 晶体管 |
| 文件： | 总17页 (文件大小：874K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF8P2160H
Rev. 1, 7/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P20160HR3
MRF8P20160HSR3
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
1880--2025 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
G
η
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1880 MHz
1900 MHz
1920 MHz
(dB)
16.5
16.6
16.5
(%)
44.8
45.3
45.8
7.0
6.9
6.9
--29.8
--30.1
--30.6
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout
Typical Pout @ 3 dB Compression Point ≃ 160 Watts CW
)
MRF8P20160HR3
2025 MHz
•
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
CASE 465H--02, STYLE 1
NI--780S--4
G
(dB)
η
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
D
MRF8P20160HSR3
Frequency
2025 MHz
15.3
44.0
6.8
--30.0
Features
•
•
•
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
•
•
•
RF /V
inB GSB
RF /V
outB DSB
(Top View)
•
•
•
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +65
--6.0, +10
32, +0
Unit
Drain--Source Voltage
V
Vdc
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
-- 65 to +150
150
T
C
°C
(1,2)
T
J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 37 W CW, 28 Vdc, I
= 550 mA, V
= 1.3 Vdc, 1900 MHz
R
θ
JC
0.75
°C/W
DQA
GSB
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(3)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
(3)
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 116 μAdc)
V
V
1.2
1.9
0.1
1.8
2.7
2.7
3.4
0.5
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 550 mAdc, Measured in Functional Test)
DD
DA
Drain--Source On--Voltage
V
0.27
(V = 10 Vdc, I = 1.5 Adc)
GS
D
(4,5)
Functional Tests
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 550 mA, V
= 1.6 Vdc, P = 37 W Avg.,
GSB out
DD
DQA
f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G
15.5
43.5
6.4
16.5
45.8
6.9
18.5
—
dB
%
ps
D
Drain Efficiency
η
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
—
dB
Adjacent Channel Power Ratio
ACPR
—
--30.6
--28.5
dBc
(5)
Typical Broadband Performance
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 550 mA, V = 1.6 Vdc,
GSB
DD
DQA
P
= 37 W Avg., f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
out
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
G
η
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1880 MHz
1900 MHz
1920 MHz
(dB)
16.5
16.6
16.5
(%)
44.8
45.3
45.8
7.0
6.9
6.9
--29.8
--30.1
--30.6
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
5. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
= 550 mA, V = 1.6 Vdc,
GSB
Max
Unit
(1)
Typical Performance
1880--1920 MHz Bandwidth
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQA
P
P
@ 1 dB Compression Point, CW
@ 3 dB Compression Point, CW
P1dB
P3dB
—
—
107
160
—
—
W
W
out
out
IMD Symmetry @ 40 W PEP, P where IMD Third Order
IMD
MHz
out
sym
—
—
13
50
—
—
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P = 37 W Avg.
G
—
—
0.2
—
—
dB
out
F
Gain Variation over Temperature
∆G
0.01
dB/°C
(--30°C to +85°C)
Output Power Variation over Temperature
∆P1dB
—
0.009
—
dB/°C
(--30°C to +85°C)
(1)
Typical Broadband Performance — 2025 MHz
(In Freescale 2025 Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 550 mA,
DQA
DD
V
= 1.6 Vdc, P = 37 W Avg., f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
GSB
out
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
G
(dB)
η
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
2025 MHz
15.3
44.0
6.8
-- 3 0 . 0
1. Measurement made with device in a Symmetrical Doherty configuration.
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
3
V
GA
C20 C22
C8
C10
C24
V
DA
C6
R2
C18
C16
C5
C3
C2
C
C12
Z1
R1
C26
C14
C1
C15
P
C13
C17
C4
C19
R3
C7
V
DB
C25
C11
C9
MRF8P20160H
Rev. 1
C21 C23
V
GB
Figure 2. MRF8P20160HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
10 pF Chip Capacitors
Part Number
ATC600F100JT250XT
ATC600F0R3BT250XT
ATC600F1R1BT250XT
ATC600F120JT250XT
GRM55DR61H106KA88L
T491X226K035AT
Manufacturer
ATC
C1, C2, C12, C13
C3
0.3 pF Chip Capacitor
ATC
C4, C5
1.1 pF Chip Capacitors
ATC
C6, C7, C18, C19
12 pF Chip Capacitors
ATC
C8, C9, C20, C21, C22, C23
10 μF, 50 V Chip Capacitors
22 μF, 35 V Tantalum Capacitors
2.0 pF Chip Capacitors
Murata
Kemet
ATC
C10, C11
C14, C15
C16, C17
C24, C25
C26
ATC600F2R0BT250XT
ATC600F2R2BT250XT
227CKS505M
2.2 pF Chip Capacitors
ATC
220 μF, 50 V Electrolytic Capacitors
0.8 pF Chip Capacitor
Illinois Cap
ATC
ATC600F0R8BT250XT
CW12010T0050GBK
CRCW12068R25FKEA
GCS351--HYB1900
RO4350B
R1
50 Ω, 4 W Chip Resistor
ATC
R2, R3
Z1
8.25 Ω, 1/4 W Chip Resistors
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
Vishay
Soshin
Rogers
PCB
0.020″, ε = 3.5
r
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
4
Single--ended
λ
4
Quadrature combined
λ
4
λ
4
Doherty
λ
λ
2
Push--pull
2
Figure 3. Possible Circuit Topologies
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
18
49
V
V
= 28 Vdc, P = 37 W (Avg.), I
GSB
= 550 mA
DD
out
DQA
17.5
17
48
= 1.6 Vdc, Single--Carrier W--CDMA
η
D
47
46
16.5
16
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
45
G
ps
-- 2 8
-- 2 9
-- 3 0
-- 3 1
-- 3 2
-- 3 3
15.5
15
-- 2 . 5
-- 3
-- 1 0
-- 1 3
-- 1 6
-- 1 9
-- 2 2
-- 2 5
PARC
IRL
14.5
14
-- 3 . 5
-- 4
-- 4 . 5
-- 5
13.5
13
ACPR
1850 1875 1900 1925 1950 1975 2000 2025 2050
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 37 Watts Avg.
-- 20
IM3--U
-- 30
IM3--L
-- 40
IM5--U
IM5--L
-- 50
-- 60
-- 7 0
IM7--L
IM7--U
= 1.6 Vdc, Two--Tone Measurements
V
= 28 Vdc, P = 40 W (PEP)
out
DD
I
= 550 mA, V
DQA
GSB
(f1 + f2)/2 = Center Frequency of 1900 MHz
1
10
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
0
18
17
16
15
14
13
12
0
60
η
D
-- 1 d B = 1 6 W
-- 2 d B = 2 6 W
50
-- 1
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
G
-- 2
-- 3
40
30
20
10
0
ps
ACPR
-- 3 d B = 3 6 W
-- 4
-- 5
V
V
= 28 Vdc, I
GSB
= 550 mA
= 1.6 Vdc, f = 1900 MHz
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
DD
DQA
PARC
PAR = 9.9 dB @ 0.01% Probability on CCDF
20 40 60
, OUTPUT POWER (WATTS)
-- 6
0
80
100
P
out
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
18
60
0
η
D
V
= 28 Vdc, I
= 550 mA, V = 1.6 Vdc
GSB
DD
DQA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
17
16
15
14
13
12
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
50
40
30
20
10
0
1920 MHz
1900 MHz
ACPR
1880 MHz
1880 MHz
1900 MHz
1920 MHz
G
ps
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1
10
100
300
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
0
Gain
IRL
-- 7
15
12
9
-- 1 4
-- 2 1
-- 2 8
--35
-- 4 2
6
V
P
= 28 Vdc
= 0 dBm
DD
in
I
= 550 mA
= 1.6 Vdc
DQA
3
0
V
GSB
1660 1720 1780 1840 1900 1960
2020 2080 2140
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
10
0
100
10
-- 1 0
-- 2 0
-- 3 0
-- 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
-- 5 0
-- 6 0
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
-- 7 0
-- 8 0
0.0001
0
2
4
6
8
10
12
-- 9 0
PEAK--TO--AVERAGE (dB)
--100
-- 9 -- 7 . 2 -- 5 . 4 -- 3 . 6 -- 1 . 8
0
1.8 3.6
5.4 7.2
9
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
7
V
= 28 Vdc, I
= 550 mA
DD
DQA
(1)
Max P
out
f
Z
Z
load
source
MHz
Watts
dBm
49.9
49.9
49.9
Ω
Ω
1880
1900
1920
98
98
97
5.14 -- j9.41
7.59 -- j9.88
8.90 -- j9.65
1.56 -- j5.24
1.58 -- j5.37
1.57 -- j5.48
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Z
Z
=
=
Test circuit impedance as measured from gate contact to ground.
Test circuit impedance as measured from drain contact to ground.
source
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 11. Maximum Output Power — Doherty Load Pull Optimization for Carrier Side
V
= 28 Vdc, I
= 550 mA
DD
DQA
(1)
f
Max Eff.
Z
Z
load
source
MHz
%
Ω
Ω
1880
1900
1920
65.1
64.6
64.6
5.14 -- j9.41
7.59 -- j9.88
8.90 -- j9.65
3.04 -- j3.65
4.13 -- j2.87
4.12 -- j3.15
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression.
Z
Z
=
=
Test circuit impedance as measured from gate contact to ground.
Test circuit impedance as measured from drain contact to ground.
source
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 12. Maximum Efficiency — Doherty Load Pull Optimization for Carrier Side
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
8
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
V
= 28 Vdc, I
= 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
DD
DQA
56
55
54
53
52
51
50
49
48
47
46
Ideal
1920 MHz
1880 MHz
Actual
1900 MHz
1880 MHz
1900 MHz
1920 MHz
45
26 27 28 29 30 31 32 33 34 35 36 37
P , INPUT POWER (dBm)
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
Watts
P3dB
Watts
f
dBm
50.1
50.2
50.2
dBm
50.9
50.8
50.7
(MHz)
1880
1900
1920
103
104
104
122
120
118
Test Impedances per Compression Level
f
Z
Z
load
source
(MHz)
Ω
Ω
1880
1900
1920
P1dB
P1dB
P1dB
5.14 -- j9.41
7.59 -- j9.88
8.90 -- j9.65
1.65 -- j5.46
1.67 -- j5.43
1.66 -- j5.50
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
9
ALTERNATE CHARACTERIZATION — 2025 MHz
V
GA
C22 C24
C8
C20
C10
C26
C28
V
GA
C6
C4
R2
C18*
C14
C3
C
C16
C12
Z1
R1
C1 C2
C15
C17
P
C13
C5
R3
C19*
C21
C7
V
GB
C27
C11
C9
MRF8P20160H
Rev. 1
C23 C25
V
GB
* Stacked
Figure 14. MRF8P20160HR3(HSR3) Test Circuit Component Layout — 2025 MHz
Table 6. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values — 2025 MHz
Part
Description
15 pF Chip Capacitors
Part Number
Manufacturer
C1, C2, C6, C7, C12, C13,
C20, C21
ATC600F150JT250XT
ATC
C3, C14, C15
0.3 pF Chip Capacitors
ATC600F0R3BT250XT
ATC600F2R4BT250XT
GRM55DR61H106KA88L
T491X226K035AT
ATC
C4, C5
2.4 pF Chip Capacitors
ATC
C8, C9, C22, C23, C24, C25
10 μF, 50 V Chip Capacitors
22 μF, 35 V Tantalum Capacitors
0.6 pF Chip Capacitors
Murata
Kemet
ATC
C10, C11
C16, C17
C18, C19
C26, C27
C28
ATC600F0R6BT250XT
ATC600F1R1BT250XT
227CKS505M
1.1 pF Chip Capacitors
ATC
220 μF, 50 V Electrolytic Capacitors
0.8 pF Chip Capacitors
Illinois Cap
ATC
ATC600F0R8BT250XT
CW12010T0050GBK
CRCW12068R25FKEA
GCS351--HYB1900
RO4350B
R1
50 Ω, 4 W Chip Resistor
ATC
R2, R3
Z1
8.25 Ω, 1/4 W Chip Resistors
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
Vishay
Soshin
Rogers
PCB
0.020″, ε = 3.5
r
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
10
TYPICAL CHARACTERISTICS — 2025 MHz
15.7
44
η
D
15.6
15.5
15.4
15.3
43
V
V
= 28 Vdc, P = 37 W (Avg.), I
= 550 mA
DD
out
DQA
= 1.6 Vdc, Single--Carrier W--CDMA
GSB
42
3.84 MHz Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
41
40
G
ps
-- 2 9
-- 3 0
-- 3 1
-- 3 2
-- 3 3
-- 3 4
15.2
15.1
15
-- 2 . 5
-- 3
-- 1 6
PARC
IRL
--16.5
-- 1 7
-- 3 . 5
-- 4
14.9
--17.5
-- 1 8
-- 4 . 5
-- 5
14.8
14.7
ACPR
--18.5
1995 2000 2005 2010 2015 2020 2025 2030 2035
f, FREQUENCY (MHz)
Figure 15. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 20 Watts Avg.
17
60
0
V
= 28 Vdc, I
= 550 mA, V
= 1.6 Vdc
GSB
DD
DQA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
η
D
16
15
14
13
12
11
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
50
40
30
20
10
0
2025 MHz
2010 MHz
ACPR
2025 MHz
2010 MHz
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
G
ps
1
10
100
300
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 16. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
0
Gain
IRL
-- 5
15
12
9
-- 1 0
-- 1 5
-- 2 0
--25
-- 3 0
6
V
P
= 28 Vdc
= 0 dBm
DD
in
3
0
I
= 550 mA
= 1.6 Vdc
DQA
V
GSB
1850
1900
1950
2000
2050
2100
2150
2200
f, FREQUENCY (MHz)
Figure 17. Broadband Frequency Response
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
12
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
13
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
14
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
15
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Apr. 2010
July 2010
•
Initial Release of Data Sheet
Added part number MRF8P20160HR3 (NI--780--4), p. 1
Corrected I value from 554 to 550 mA in Thermal Characteristics table and changed thermal
•
•
DQ1A
resistance value from 0.95 to 0.75°C/W. Thermal value now reflects the use of the combined dissipated
power from the carrier amplifier and peaking amplifier, p. 2
•
•
•
Changed V
values from 0.05 to 0.1 Min, 0.11 to 0.27 Typ and 0.15 to 0.5 Max. Revised numbers
DS(on)
reflect per side measurement versus previous combined measurements, p. 2
Replaced Fig. 4, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ P
37 Watts Avg. to show a wider bandwidth capability, p. 6
=
out
Replaced Fig. 15, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ P
20 Watts Avg. to show more detailed RF performance capability, p. 11
=
out
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
16
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Document Number: MRF8P2160H
Rev. 1,7/2010
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