MRF8P20165WHSR3 [NXP]
RF Power Field Effect Transistors;
| 型号： | MRF8P20165WHSR3 |
| 厂家： | 
NXP |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总16页 (文件大小：802K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF8P20165WH
Rev. 0, 4/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P20165WHR3
MRF8P20165WHSR3
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 1880 to 2025 MHz.
•
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
1930--1995 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
G
(dB)
η
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
D
LATERAL N--CHANNEL
RF POWER MOSFETs
Frequency
1930 MHz
1960 MHz
1995 MHz
16.1
16.3
16.3
47.0
47.7
46.0
7.1
7.1
7.0
--27.7
--29.7
--33.3
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout
Typical Pout @ 3 dB Compression Point ≃ 190 Watts (1)
)
Features
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
•
•
•
•
•
Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 100 MHz.
Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
MRF8P20165WHR3
•
•
•
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20165WHSR3
•
•
•
•
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Symbol
Value
--0.5, +65
--6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
RF /V
inB GSB
RF /V
outB DSB
V
DSS
Gate--Source Voltage
V
V
GS
DD
Operating Voltage
(Top View)
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
125
T
C
°C
Figure 1. Pin Connections
(2)
T
J
225
°C
Table 2. Thermal Characteristics
(3)
Characteristic
Symbol
Value
Unit
°C/W
Thermal Resistance, Junction to Case
R
θ
JC
Case Temperature 80°C, 37 W CW, 28 Vdc, I
Case Temperature 114°C, 160 W CW, 28 Vdc, I
= 550 mA, V
= 1.3 Vdc, 1960 MHz
GSB
0.79
0.53
DQA
= 550 mA, V
= 1.3 Vdc, 1960 MHz
DQA
GSB
1. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
1C (Minimum)
B (Minimum)
III (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
5
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
(2)
On Characteristics
(1)
Gate Threshold Voltage
(V = 10 Vdc, I = 232 μAdc)
V
V
1.2
2.0
1.8
2.7
3.5
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 550 mAdc, Measured in Functional Test)
2.7
DD
DA
(1)
Drain--Source On--Voltage
V
0.05
0.2
(V = 10 Vdc, I = 1.5 Adc)
GS
D
(2,3,4)
Functional Tests
(In Freescale Doherty Production Test Fixture, 50 ohm system) V = 28 Vdc, I
= 550 mA, V
= 1.3 Vdc,
GSB
DD
DQA
P
= 37 W Avg., f1 = 1980 MHz, f2 = 2010 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
out
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G
14.2
40.6
5.2
14.8
44.3
5.8
17.2
—
dB
%
ps
D
Drain Efficiency
η
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
—
dB
Adjacent Channel Power Ratio
ACPR
—
--31.0
--28.7
dBc
(4)
Typical Broadband Performance — (In Freescale Doherty Characterization Test Fixture, 50 ohm system) V = 28 Vdc, I
= 550 mA,
DQA
DD
V
= 1.3 Vdc, P = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
GSB
out
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
G
η
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
(dB)
16.1
16.3
16.3
(%)
47.0
47.7
46.0
1930 MHz
7.1
7.1
7.0
--27.7
--29.7
--33.3
1960 MHz
1995 MHz
1. Side A and Side B are tied together for this measurement.
2. V
and V
must be tied together and powered by a single DC power supply.
DDA
DDB
3. Part internally matched both on input and output.
4. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Typical Performances
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V = 28 Vdc, I
= 550 mA,
DQA
DD
V
= 1.3 Vdc, 1930--1995 MHz Bandwidth
GSB
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
—
104
190
—
—
W
W
out
out
(2)
@ 3 dB Compression Point
IMD Symmetry @ 74 W PEP, P where IMD Third Order
IMD
MHz
out
sym
—
—
20
—
—
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
100
0.2
MHz
res
Gain Flatness in 65 MHz Bandwidth @ P = 37 W Avg.
G
—
—
—
—
dB
out
F
Gain Variation over Temperature
∆G
0.017
dB/°C
(--30°C to +85°C)
Output Power Variation over Temperature
∆P1dB
—
0.01
—
dB/°C
(--30°C to +85°C)
1. Measurement made with device in a Symmetrical Doherty configuration.
2. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
3
V
GGA
C22
C8
C10
Z1
V
DDA
C24
C6
C28
R2
C1
C18
C14
C3
R1
C30
C
C12
C13
C15
C16
P
C4
C2
C19
C23
C29
R3
C9
C7
C25
C26
C27
V
DDB
C11
MRF8P20165W
Rev. 1
V
GGB
Note 1: Component numbers C5, C17, C20 and C21 are not used.
Note 2: V and V must be tied together and powered by a single DC power supply.
DDA
DDB
Figure 2. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Layout
Table 5. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Designations and Values
Part
C1, C2, C6, C7, C12, C13
C3, C4
Description
15 pF Chip Capacitors
Part Number
ATC600F150JT250XT
ATC600F1R8BT250XT
GRM55DR61H106KA88L
T491X226K035AT
Manufacturer
ATC
1.8 pF Chip Capacitors
ATC
C8, C9, C24, C25
C10, C11
C14
10 μF, 50 V Chip Capacitors
22 μF, 35 V Tantalum Capacitors
0.3 pF Chip Capacitor
Murata
Kemet
ATC
ATC600F0R3BT250XT
ATC600F1R0BT250XT
ATC600F2R0BT250XT
ATC600F180JT250XT
ATC600F0R1BT250XT
227CKS050M
C15, C16
C18, C19
C22, C23
C26, C27
C28, C29
C30
1.0 pF Chip Capacitors
ATC
2.0 pF Chip Capacitors
ATC
18 pF Chip Capacitors
ATC
0.1 pF Chip Capacitors
ATC
220 μF, 50 V Electrolytic Capacitors
0.8 pF Chip Capacitor
Illinois Capacitor
ATC
ATC600F0R8BT250XT
CW12010T0050GBK
CRCW12062R37FNEA
GSC351--HYB1900
RO4350B
R1
50 Ω, 4 W Chip Resistor
ATC
R2, R3
2.37 Ω, 1/4 W Chip Resistors
1750 MHz Band 90°, 3 dB Hybrid Coupler
Vishay
Soshin
Rogers
Z1
PCB
0.020″, ε = 3.5
r
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
4
V
GGA
C25
V
C7
DDA
C21
C19
R1
C10
C23
C5
C27
C29
C9
C3
Z1
C12
C1
C2
C17
C18
C
C11
C30
C13
C15
R3
C14
P
C4
C28
C6
C24
C16
C20
C22
R2
V
DDB
C8
C26
V
GGB
MRF8P20165W
Rev. 0
Note: V
and V
must be tied together and powered by a single DC power supply.
DDB
DDA
Figure 3. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Layout
Table 6. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Designations and Values
Part
Description
1.6 pF Chip Capacitor
Part Number
ATC600S1R6BT250XT
ATC600S1R8BT250XT
ATC600S100JT250XT
Manufacturer
ATC
C1
C2
1.8 pF Chip Capacitor
10 pF Chip Capacitors
ATC
ATC
C3, C4, C5, C6, C21, C22
C29, C30
C7, C8, C23, C24
10 μF, 50 V Chip Capacitors
2.7 pF Chip Capacitors
GRM55DR61H106KA88L
ATC600S2R7BT250XT
ATC600S1R0BT250XT
ATC600S0R6BT250XT
ATC600S1R5BT250XT
MCGPR35V337M10X16--RH
ATC600S0R5BT250XT
CRCW12062R37FNEA
CRCW120651R0FKEA
GSC351--HYB1900
Murata
ATC
C9, C11, C13, C15
C10, C12, C14, C16, C17
1 pF Chip Capacitors
ATC
C18, C28
C19, C20
C25, C26
C27
0.6 pF Chip Capacitors
ATC
1.5 pF Chip Capacitors
ATC
330 μF, 35 V Electrolytic Capacitors
0.5 pF Chip Capacitor
Multicomp
ATC
R1, R2
R3
2.37 Ω, 1/4 W Chip Resistors
51 Ω, 1/4 W Chip Resistor
1900 MHz Band 90°, 3 dB Hybrid Coupler
Vishay
Vishay
Soshin
Rogers
Z1
PCB
0.030″, ε = 3.48
RO4350
r
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
5
Single--ended
λ
4
Quadrature combined
λ
4
λ
4
Doherty
λ
λ
2
Push--pull
2
Figure 4. Possible Circuit Topologies
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
20
19
18
17
16
15
14
13
12
11
10
52
V
= 28 Vdc, P = 37 W (Avg.), I
= 550 mA, V
= 1.3 Vdc
GSB
DD
out
DQA
50
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
48
η
D
46
44
G
ps
30 MHz Carrier Spacing, Input Signal
PAR = 9.8 dB @ 0.01% Probability on CCDF
-- 2 7
-- 2 9
-- 3 1
-- 3 3
-- 3 5
-- 3 7
-- 2 1
-- 2 2
-- 2 . 5
--2.75
-- 3
-- 2 3
-- 2 4
-- 2 5
-- 2 6
PARC
ACPR
--3.25
-- 3 . 5
--3.75
IM3
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 5. 2--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 37 Watts Avg.
20
19
18
17
16
15
14
13
12
11
10
52
V
= 28 Vdc, P = 37 W (Avg.), I
= 550 mA, V
= 1.3 Vdc
GSB
DD
out
DQA
50
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
48
η
D
46
G
ps
44
-- 2 6
-- 2 8
-- 3 0
-- 3 2
-- 3 4
-- 3 6
-- 2 . 5
--2.75
-- 3
PARC
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
--3.25
-- 3 . 5
--3.75
ACPR
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 6. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 37 Watts Avg.
-- 10
V
= 28 Vdc, P = 74 W (PEP), I
= 550 mA, V
= 1.3 Vdc
GSB
DD
out
DQA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 1960 MHz
-- 20
-- 30
-- 40
-- 50
-- 6 0
IM3--L
IM3--U
IM5--L
IM5--U
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
200
Figure 7. Intermodulation Distortion Products
versus Two--Tone Spacing
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
-- 3 5
-- 4 0
17.5
17
1
0
60
50
V
= 28 Vdc, I
= 550 mA, V
= 1.3 Vdc
GSB
DD
DQA
f = 1960 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
η
D
16.5
16
-- 1
-- 2
40
30
20
10
0
G
ps
ACPR
-- 1 d B = 1 7 W
-- 2 d B = 2 8 W
15.5
15
-- 3
-- 4
PARC
-- 3 d B = 3 9 W
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
14.5
-- 5
10
20
30
40
50
60
P
, OUTPUT POWER (WATTS)
out
Figure 8. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
18
60
0
V
= 28 Vdc, I
= 550 mA, V
= 1.3 Vdc
GSB
DD
DQA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
17
16
15
14
13
12
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
50
40
30
20
10
0
1930 MHz
1960 MHz
1995 MHz
η
D
G
ps
ACPR
1930 MHz
1960 MHz
1995 MHz
1930 MHz
1960 MHz
1995 MHz
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
10
1
100
200
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 9. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
18
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
V
= 28 Vdc, I
= 550 mA, V
= 1.3 Vdc, f1 = 1945 MHz
GSB
DD
DQA
f2 = 1975 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
17
16
15
14
13
12
15
12
9
G
ps
IM5--L
IM5--U
V
P
= 28 Vdc
= 0 dBm
DD
IM3--U
IM7--L
in
6
IM3--L
I
V
= 550 mA
= 1.3 Vdc
DQA
GSB
3
0
Input Signal PAR = 9.8 dB @
0.01% Probability on CCDF
IM7--U
1
10
, OUTPUT POWER (WATTS) AVG.
100
200
1800 1835 1870 1905 1940 1975
2010 2045 2080
P
f, FREQUENCY (MHz)
out
Figure 10. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7
versus Output Power
Figure 11. Broadband Frequency Response
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
8
W--CDMA TEST SIGNAL
-- 2 0
100
10
3.84 MHz
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 9 0
--100
Channel BW
1
Input Signal
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
-- I M 3 i n
3.84 MHz BW
+IM3 in
3.84 MHz BW
0.001
-- 11 0
--120
0.0001
--75 -- 6 0 -- 4 5 -- 3 0 -- 1 5
0
15
30
45
60 75
0
2
4
6
8
10
12
f, FREQUENCY (MHz)
PEAK--TO--AVERAGE (dB)
Figure 13. 2-Carrier W-CDMA Spectrum
Figure 12. CCDF W--CDMA IQ Magnitude
Clipping, 2--Carrier Test Signal
100
10
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
-- 5 0
-- 6 0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
0.001
-- 7 0
-- 8 0
0.0001
0
2
4
6
8
10
12
-- 9 0
PEAK--TO--AVERAGE (dB)
--100
Figure 14. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
-- 9 -- 7 . 2 -- 5 . 4 -- 3 . 6 -- 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 15. Single--Carrier W--CDMA Spectrum
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
9
V
= 28 Vdc, I
= 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
DD
DQA
Max Output Power
P1dB
P3dB
(W)
(1)
f
Z
Z
load
(Ω)
source
(Ω)
(MHz)
(dBm)
50.4
(W)
110
110
110
η
(%)
(dBm)
51.2
η (%)
D
D
1930
1960
1990
16.0 -- j8.99
17.2 -- j2.43
18.6 + j3.55
1.58 -- j5.68
1.55 -- j6.08
1.93 -- j5.82
55.3
54.4
54.4
132
135
132
55.8
53.5
55.4
50.4
51.3
50.4
51.2
(1) Load impedance for optimum P1dB power.
Z
Z
= Impedance as measured from gate contact to ground.
= Impedance as measured from drain contact to ground.
source
load
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 16. Carrier Side Load Pull Performance — Maximum P1dB Tuning
V
= 28 Vdc, I
= 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
DD
DQA
P3dB
(W)
91
(1)
f
Z
Z
load
source
(Ω)
(MHz)
(Ω)
(dBm)
48.5
(W)
71
η
(%)
(dBm)
49.6
η
(%)
D
D
1930
1960
1990
16.0-- j8.99
17.2 -- j2.43
18.6 + j3.55
3.45 -- j3.43
3.68 -- j3.88
2.95-- j3.99
65.8
65.6
65.1
66.5
48.7
74
49.6
91
66.1
65.3
48.2
66
49.6
91
(1) Load impedance for optimum P1dB efficiency.
Z
Z
= Impedance as measured from gate contact to ground.
= Impedance as measured from drain contact to ground.
source
load
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 17. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
11
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
12
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
13
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
14
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, Software and Tools to aid your design process.
Application Notes
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
.s2p File
•
•
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8P20165WH and MRF8P20165WHS parts will be available for 2 years after release of
MRF8P20165WH and MRF8P20165WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8P20165WH and MRF8P20165WHS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Apr. 2011
• Initial Release of Data Sheet
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
15
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Document Number: MRF8P20165WH
Rev. 0, 4/2011
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