MRF8P8300HR6 [NXP]
N-Channel Enhancement-Mode Lateral MOSFET;
| 型号： | MRF8P8300HR6 |
| 厂家： | 
NXP |
| 描述： | N-Channel Enhancement-Mode Lateral MOSFET 局域网 放大器 CD 晶体管 |
| 文件： | 总14页 (文件大小：538K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF8P8300H
Rev. 1, 4/2013
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 750 to 820 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
MRF8P8300HR6
MRF8P8300HSR6
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ
2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel
=
750--820 MHz, 96 W AVG., 28 V
SINGLE W--CDMA
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
LATERAL N--CHANNEL
RF POWER MOSFETs
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
790 MHz
805 MHz
820 MHz
(dB)
20.9
21.0
20.9
(%)
35.2
35.5
35.7
6.2
6.2
6.1
--38.1
--38.1
--38.2
Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
NI--1230--4H
MRF8P8300HR6
Typical Pout @ 1 dB Compression Point ≃ 340 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--1230--4S
MRF8P8300HSR6
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
Symbol
Value
--0.5, +70
--6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
Gate--Source Voltage
V
DSS
RF /V
inB GSB
RF /V
outB DSB
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
150
(Top View)
T
C
C
Figure 1. Pin Connections
(1,2)
T
J
225
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
C/W
Thermal Resistance, Junction to Case
R
JC
Case Temperature 80C, 96 W CW, 28 Vdc, I = 2000 mA, 820 MHz
0.26
0.21
DQ
Case Temperature 85C, 300 W CW, 28 Vdc, I = 2000 mA, 820 MHz
DQ
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2011, 2013. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2
A
IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 70 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
(1)
Gate Threshold Voltage
(V = 10 Vdc, I = 400 Adc)
V
V
1.5
2.3
0.1
2.3
3.1
0.2
3.0
3.8
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 2000 mA, Measured in Functional Test)
DD
DQ
(1)
Drain--Source On--Voltage
V
(V = 10 Vdc, I = 3 Adc)
GS
D
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 2000 mA, P = 96 W Avg., f = 820 MHz,
DD DQ out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
20.0
34.5
5.9
—
20.9
35.7
6.1
23.5
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
dB
dBc
dB
--38.2
-- 1 2
--36.5
-- 9
—
Typical Performance over Frequency (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 2000 mA, P = 96 W Avg.,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
790 MHz
805 MHz
820 MHz
(dB)
20.9
21.0
20.9
(%)
35.2
35.5
35.7
6.2
6.2
6.1
--38.1
--38.1
--38.2
-- 11
-- 1 2
-- 1 2
1. Each side of device measured separately.
2. Part internally matched both on input and output.
(continued)
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 2000 mA, 790--820 MHz Bandwidth
DD
DQ
P
@ 1 dB Compression Point, CW
P1dB
—
340
—
W
out
IMD Symmetry @ 290 W PEP, P where IMD Third Order
IMD
MHz
out
sym
—
35
—
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
—
35
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 30 MHz Bandwidth @ P = 96 W Avg.
G
—
—
0.5
—
—
dB
out
F
Gain Variation over Temperature
G
0.0185
dB/C
(--30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.0076
—
dB/C
(--30C to +85C)
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
3
B1
C27
C25
C29
C53
C55
C23
C57
C11 C13
R1
C37
C39
C9
C15
C19
C31
C33
C4
C5*
C6*
C47*
C48*
C49
C17
C35 C41
C21
C22
C43 C45
C44 C46
C7
C8
C36 C42
C1
C2 C3
C51 C52
C50
C18
C10
C34
C32
C20
C16
C40
MRF8P8300H
Rev. 2
C38
C56
C54
R2
C12 C14
C58
C26
C28
C24
C30
B2
*C5, C6, C47, and C48 are mounted vertically.
Figure 2. MRF8P8300HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8P8300HR6(HSR6) Test Circuit Component Designations and Values
Part
Description
Short Ferrite Beads
Part Number
MPZ2012S300AT000
ATC100B2R1BT500XT
ATC100B1R0BT500XT
ATC100B121JT500XT
ATC100B390JT500XT
ATC100B1R1BT500XT
C4532X5R1H475KT
ATC100B100JT500XT
ATC100B4R7CT500XT
ATC100B4R3CT500XT
ATC100B8R2CT500XT
UUD1V220MCL1GS
ATC100B200JT500XT
ATC100B300JT500XT
ATC100B130JT500XT
ATC100B7R5CT500XT
ATC100B1R5BT500XT
ATC100B0R8BT500XT
ATC100B2R0BT500XT
C5750JF1H226ZT
Manufacturer
TDK
ATC
ATC
ATC
ATC
ATC
TDK
ATC
ATC
ATC
ATC
Nichicon
ATC
ATC
ATC
ATC
ATC
B1, B2
C1, C2, C39, C40, C41, C42
C3, C49, C50
C4
C5, C6, C11, C12, C47, C48
C7, C8, C45, C46
C9, C10
C13, C14, C19, C20, C25, C26
C15, C16, C35, C36
C17, C18
2.1 pF Chip Capacitors
1.0 pF Chip Capacitors
120 pF Chip Capacitor
39 pF Chip Capacitors
1.1 pF Chip Capacitors
4.7 F, 50 V Chip Capacitors
10 pF Chip Capacitors
4.7 pF Chip Capacitors
4.3 pF Chip Capacitors
8.2 pF Chip Capacitors
22 F Electrolytic Capacitors
20 pF Chip Capacitors
30 pF Chip Capacitors
13 pF Chip Capacitors
7.5 pF Chip Capacitors
1.5 pF Chip Capacitors
0.8 pF Chip Capacitors
2.0 pF Chip Capacitors
22 F, 50 V Chip Capacitors
470 F, 63 V Electrolytic Capacitors
3 Chip Resistors
C21, C22
C23, C24
C27, C28
C29, C30
C31, C32
C33, C34
C37, C38
C43, C44
ATC
ATC
TDK
Multicomp
Vishay
Taconic
C51, C52
C53, C54, C55, C56
C57, C58
MCGPR63V477M13X26--RH
CRCW12063R00FNEA
RF35A2
R1, R2
PCB
0.030, = 3.5
r
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
25
24
23
22
21
20
19
18
17
36
34
D
V
= 28 Vdc, P = 96 W (Avg.), I = 2000 mA
out DQ
DD
32
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
30
28
-- 3 0
-- 3 2
-- 3 4
-- 3 6
-- 3 8
-- 4 0
G
-- 1
0
ps
-- 1 . 3
-- 4
PARC
-- 1 . 6
-- 1 . 9
-- 2 . 2
-- 2 . 5
-- 8
IRL
-- 1 2
-- 1 6
-- 2 0
16
15
730
ACPR
750 770
790
810
830
850
870
890
f, FREQUENCY (MHz)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 96 Watts Avg.
-- 1 0
V
= 28 Vdc, P = 290 W (PEP), I = 2000 mA
out DQ
DD
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 805 MHz
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--U
IM7--L
1
10
100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 2 5
22
21.5
21
1
0
56
V
= 28 Vdc, I = 2000 mA, f = 805 MHz
DQ
DD
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
50
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
ACPR
-- 1
-- 2
44
38
32
26
20
D
--1 dB = 75.1 W
20.5
20
--3 dB = 153.4 W
--2 dB = 110.5 W
G
ps
-- 3
-- 4
PARC
19.5
19
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
-- 5
40
70
100
130
160
190
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
23
66
55
44
0
790 MHz
805 MHz
820 MHz
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
22 790 MHz
805 MHz
820 MHz
D
21
20
G
ps
ACPR
33
22
11
0
V
= 28 Vdc, I = 2000 mA, Single--Carrier
DQ
DD
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
19
18
17
820 MHz
805 MHz
790 MHz
10
1
100
400
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
10
Gain
5
20
0
16
12
8
-- 5
IRL
-- 1 0
-- 1 5
-- 2 0
V
P
= 28 Vdc
= 0 dBm
= 2000 mA
DD
4
0
in
I
DQ
580
640
700
760
820
880
940
1000 1060
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
-- 5 0
-- 6 0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
0.001
-- 7 0
-- 8 0
0.0001
0
1
2
3
4
5
6
7
8
9
10
-- 9 0
PEAK--TO--AVERAGE (dB)
--100
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
-- 9 -- 7 . 2 -- 5 . 4 -- 3 . 6 -- 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
6
V
= 28 Vdc, I = 2000 mA, P = 96 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
730
750
770
790
810
830
850
870
890
1.07 -- j1.15
1.06 -- j0.97
1.11 -- j0.78
1.05 -- j0.62
1.11 -- j0.45
1.19 -- j0.26
1.95 + j0.48
1.35 -- j1.66
0.95 -- j1.07
0.86 -- j0.18
0.90 + j0.04
1.07 + j0.46
1.28 -- j0.67
0.88 -- j0.12
0.87 + j0.04
0.82 + j0.05
0.71 + j0.12
0.59 + j0.22
Z
Z
=
=
Test circuit impedance as measured from
gate to ground, gate leads are tied together.
source
Test circuit impedance as measured from
drain to ground, drain leads are tied together.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 10. Series Equivalent Source and Load Impedance
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
V
= 28 Vdc, I
= 1000 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQA
61.5
60
58.5
57
Ideal
Actual
55.5
54
822 MHz
52.5
51
806 MHz
790 MHz
790 MHz
806 MHz
49.5
48
822 MHz
46.5
45
25 26.5 28 29.5 31 32.5 34 35.5 37 38.5 40 41.5
P , INPUT POWER (dBm)
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
Watts
P3dB
Watts
f
dBm
54.6
54.8
54.6
dBm
55.6
55.6
55.4
(MHz)
790
806
822
288
299
287
363
366
349
Test Impedances per Compression Level
f
Z
Z
load
source
(MHz)
790
806
822
P1dB
P1dB
P1dB
1.04 -- j0.98
1.16 -- j1.39
1.24 -- j1.73
0.78 -- j0.73
0.76 -- j0.71
0.76 -- j0.74
Figure 11. Pulsed CW Output Power
versus Input Power @ 28 V
Note: Measurement made on a per side basis.
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
8
PACKAGE DIMENSIONS
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
10
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
12
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, tools and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Jan. 2011
Apr. 2013
Initial Release of Data Sheet
Changed operating frequency from 790--820 MHz to 750--820 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
Replaced Case Outline 98ASB16977C, Issue E with Issue F, p. 9, 10. Changed dimension C from
0.150--0.200 to CC 0.170--0.190.
Replaced Case Outline 98ARB18247C, Issue F with Issue G, p. 11, 12. Changed dimension C from
0.150--0.200 to CC 0.170--0.190. Added minimum Z dimension R0.00.
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2011, 2013 Freescale Semiconductor, Inc.
Document Number: MRF8P8300H
Rev. 1, 4/2013
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