MRF8P9040NR1 [NXP]
N-Channel Enhancement-Mode Lateral MOSFET;
| 型号： | MRF8P9040NR1 |
| 厂家： | 
NXP |
| 描述： | N-Channel Enhancement-Mode Lateral MOSFET 局域网 放大器 光电二极管 晶体管 |
| 文件： | 总23页 (文件大小：910K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF8P9040N
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P9040NR1
MRF8P9040GNR1
MRF8P9040NBR1
Designed for CDMA, W--CDMA and LTE base station applications with
frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
Driver Application — 900 MHz
•
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ
320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel
=
728--960 MHz, 4.0 W AVG., 28 V
CDMA, W--CDMA, LTE
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
LATERAL N--CHANNEL
RF POWER MOSFETs
G
η
ACPR
(dBc)
ps
D
Frequency
920 MHz
940 MHz
960 MHz
(dB)
18.9
19.1
19.1
(%)
18.9
19.5
19.9
--49.6
--50.1
--48.8
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
PLASTIC
MRF8P9040NR1
Typical Pout @ 1 dB Compression Point ≃ 42 Watts CW
Driver Application — 700 MHz
•
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ
320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel
=
CASE 1487--05, STYLE 1
T O -- 2 7 0 W B -- 4 G U L L
PLASTIC
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
MRF8P9040GNR1
G
η
ACPR
(dBc)
ps
D
Frequency
728 MHz
748 MHz
768 MHz
(dB)
19.9
20.1
20.0
(%)
18.7
19.1
19.5
--49.9
--50.0
--49.9
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
Features
PLASTIC
MRF8P9040NBR1
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
•
•
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RF /V
RF /V
outA DSA
inA GSA
3
4
2
1
•
•
•
•
•
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RF /V
inB GSB
RF /V
outB DSB
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
© Freescale Semiconductor, Inc., 2010. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +70
--6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
150
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
(4)
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 77°C, 4.0 W CW, 28 Vdc, I = 320 mA, 960 MHz
1.5
1.3
DQ
Case Temperature 81°C, 40 W CW, 28 Vdc, I = 320 mA, 960 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 70 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
(4)
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 170 μAdc)
V
V
1.5
2.3
0.1
2.3
3.1
3.0
3.8
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 320 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 0.55 Adc)
V
0.17
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies)
(continued)
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2,3)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 320 mA, P = 4.0 W Avg., f = 960 MHz,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G
17.5
18.0
—
19.1
19.9
--48.8
-- 1 3
20.5
—
dB
%
ps
D
Drain Efficiency
η
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
--46.0
-- 9
dBc
dB
—
(1)
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 320 mA, P = 4.0 W Avg.,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
G
η
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
920 MHz
940 MHz
960 MHz
(dB)
18.9
19.1
19.1
(%)
18.9
19.5
19.9
--49.6
--50.1
--48.8
-- 1 2
-- 1 3
-- 1 3
(1)
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 320 mA, 920--960 MHz Bandwidth
DD DQ
Characteristic
@ 1 dB Compression Point, CW
Symbol
P1dB
IMD
Min
Typ
Max
Unit
W
P
—
42
—
out
IMD Symmetry @ 45 W PEP, P where IMD Third Order
MHz
out
sym
—
—
22
70
—
—
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P = 4.0 W Avg.
G
—
—
0.2
—
—
dB
out
F
Gain Variation over Temperature
∆G
0.016
dB/°C
(--30°C to +85°C)
Output Power Variation over Temperature
∆P1dB
—
0.001
—
dB/°C
(--30°C to +85°C)
(1)
Typical Broadband Performance — 700 MHz
(In Freescale 700 MHz Test Fixture, 50 ohm system) V = 28 Vdc, I = 320 mA,
DD DQ
P
= 4.0 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
out
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
G
η
(%)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
728 MHz
748 MHz
768 MHz
(dB)
19.9
20.1
20.0
18.7
19.1
19.5
--49.9
--50.0
--49.9
-- 1 4
-- 1 5
-- 1 2
1. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies)
2. Part internally input matched.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
3
C3
C6
C5
C4
B1
C12
C2
C9
C10
C1
C11
MRF8P9040N/NB
Rev 1
C7
C8
Figure 2. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
MPZ2012S300AT000
ATC100B510GT500XT
ATC100B5R6CT500XT
C3225X7R1H225KT
293D106X9050E2TE3
ATC100B6R8CT500XT
ATC100B2R0BT500XT
227CKS050M
Manufacturer
B1
RF Ferrite Bead
TDK
ATC
ATC
TDK
C1, C4, C5, C7, C11
51 pF Chip Capacitors
C2
5.6 pF Chip Capacitor
C3
2.2 μF, 50 V Chip Capacitor
10 μF, 50 V Chip Capacitors
6.8 pF Chip Capacitor
C6, C8
C9
Vishay
ATC
C10
C12
PCB
2.0 pF Chip Capacitor
ATC
220 μF, 63 V Electrolytic Capacitor
Illinois Capacitor
Rogers
0.030″, ε = 3.5
RO4350B
r
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
4
Single--ended
λ
4
Quadrature combined
λ
4
λ
4
Doherty
λ
λ
2
Push--pull
2
Figure 3. Possible Circuit Topologies
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
20
22
V
= 28 Vdc, P = 4.0 W (Avg.), I = 320 mA
out DQ
DD
19.5
19
20
18
η
D
16
18.5
18
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability
on CCDF
14
G
ps
-- 4 7
-- 4 8
-- 4 9
-- 5 0
-- 5 1
-- 5 2
17.5
17
0.1
0
0
PARC
-- 3
-- 6
-- 9
-- 1 2
-- 1 5
16.5
16
-- 0 . 1
-- 0 . 2
-- 0 . 3
-- 0 . 4
ACPR
IRL
15.5
15
820
840
860
880
900
920
940
960
980
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 4.0 Watts Avg.
-- 20
IM3--L
-- 30
IM3--U
-- 40
-- 50
-- 60
-- 7 0
IM5--U
IM5--L
IM7--U
IM7--L
V
DQ
= 28 Vdc, P = 45 W (PEP)
DD
out
I
= 320 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
1
10
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
0
21
20
19
18
17
16
15
1
0
60
V
= 28 Vdc, I = 320 mA, f = 940 MHz
DQ
DD
η
D
Single--Carrier W--CDMA
50
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 1 d B = 11 W
ACPR
-- 1
-- 2
40
30
20
10
0
-- 2 d B = 1 4 W
-- 3
-- 4
-- 3 d B = 2 0 W
G
ps
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
PARC
-- 5
0
8
16
24
32
40
P
, OUTPUT POWER (WATTS)
out
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
20
60
0
V
= 28 Vdc, I = 320 mA, Single--Carrier
DQ
η
D
DD
W--CDMA, 3.84 MHz Channel Bandwidth
19
18
17
16
15
14
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
50
40
30
20
10
0
920 MHz
940 MHz
960 MHz
ACPR
Input Signal PAR = 7.5 dB
@ 0.01% Probability
on CCDF
960 MHz
940 MHz
G
ps
920 MHz
1
10
, OUTPUT POWER (WATTS) AVG.
100
P
out
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
0
Gain
IRL
-- 3
20
16
12
-- 6
-- 9
-- 1 2
--15
-- 1 8
8
V
P
= 28 Vdc
= 0 dBm
= 320 mA
DD
4
0
in
I
DQ
750
800
850
900
950
1000
1050 1100
1150
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
-- 5 0
-- 6 0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
0.001
-- 7 0
-- 8 0
0.0001
0
1
2
3
4
5
6
7
8
9
10
-- 9 0
PEAK--TO--AVERAGE (dB)
--100
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
-- 9 -- 7 . 2 -- 5 . 4 -- 3 . 6 -- 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
7
V
= 28 Vdc, I = 320 mA, P = 4.0 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
820
840
860
880
900
920
940
960
980
Ω
Ω
6.33 -- j6.70
6.46 -- j6.14
6.47 -- j5.83
6.15 -- j5.53
5.77 -- j5.09
5.53 -- j4.65
5.39 -- j4.29
5.30 -- j3.95
5.26 -- j3.54
6.02 -- j0.61
5.89 + j0.00
5.80 + j0.44
5.59 + j0.73
5.31 + j1.05
5.13 + j1.44
5.06 + j1.84
5.03 + j2.28
4.99 + j2.78
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 11. Series Equivalent Source and Load Impedance
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
8
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
V
= 28 Vdc, I = 320 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
DD
DQ
53
52
51
50
49
48
47
46
45
44
43
Ideal
960 MHz
Actual
920 MHz
960 MHz
940 MHz
940 MHz
920 MHz
42
24 25 26 27 28 29 30 31 32 33 34 35
P , INPUT POWER (dBm)
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
Watts
P3dB
Watts
f
dBm
48.1
48.1
48.0
dBm
49.0
48.8
48.7
(MHz)
920
940
960
65
65
63
79
76
74
Test Impedances per Compression Level
f
Z
Z
load
source
(MHz)
Ω
Ω
920
940
960
P1dB
P1dB
P1dB
4.03 -- j5.45
4.63 -- j6.15
5.57 -- j5.96
2.24 + j0.08
2.21 + j0.35
2.36 + j0.47
Figure 12. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
9
C3
C6
C5
C4
B1
C12
C2
C13
C9
C10
C1
C11
MRF8P9040N/NB
Rev 1
C7
C8
Figure 13. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Layout — 728--768 MHz
Table 7. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 728--768 MHz
Part
Description
Part Number
MPZ2012S300AT000
ATC100B820JT500XT
ATC100B120JT500XT
C3225X7R1H225KT
293D106X9050E2TE3
ATC100B4R7CT500XT
227CKS050M
Manufacturer
B1
RF Ferrite Bead
TDK
ATC
ATC
TDK
C1, C4, C5, C7, C11
82 pF Chip Capacitors
C2, C9
C3
12 pF Chip Capacitors
2.2 μF, 50 V Chip Capacitor
10 μF, 50 V Tantalum Capacitors
4.7 pF Chip Capacitor
C6, C8
C10
Vishay
ATC
C12
220 μF, 63 V Electrolytic Capacitor
1.5 pF Chip Capacitor
Illinois Capacitor
ATC
C13
ATC100B1R5BT500XT
RO4350B
PCB
0.030″, ε = 3.5
Rogers
r
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
10
TYPICAL CHARACTERISTICS — 728--768 MHz
22
22
V
= 28 Vdc, P = 4.0 W (Avg.), I = 320 mA
out DQ
DD
21.6
21.2
20.8
20.4
20
18
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
η
D
16
14
G
ps
-- 4 9
--49.2
--49.4
--49.6
--49.8
-- 5 0
20
19.6
19.2
18.8
0.1
0
-- 9
PARC
ACPR
-- 1 0
-- 11
-- 1 2
-- 1 3
-- 1 4
-- 0 . 1
-- 0 . 2
-- 0 . 3
-- 0 . 4
18.4
18
IRL
710
720
730
740
750
760
770
780
790
f, FREQUENCY (MHz)
Figure 14. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 4.0 Watts Avg.
22
60
0
V
= 28 Vdc, I = 320 mA, Single--Carrier
DQ
η
D
DD
W--CDMA, 3.84 MHz Channel Bandwidth Input
Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF
21
20
19
18
17
16
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
50
40
30
20
10
0
ACPR
768 MHz
748 MHz
728 MHz
728 MHz
748 MHz
G
ps
768 MHz
10
1
100
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 15. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
0
Gain
IRL
-- 3
20
16
12
-- 6
-- 9
-- 1 2
--15
-- 1 8
8
V
P
= 28 Vdc
= 0 dBm
= 320 mA
DD
4
0
in
I
DQ
550
600
650
700
750
800
850
900
950
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
11
V
= 28 Vdc, I = 320 mA, P = 4.0 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
710
720
730
740
750
760
770
780
790
Ω
Ω
4.33 -- j2.57
4.23 -- j2.28
4.17 -- j1.99
4.15 -- j1.74
4.15 -- j1.53
4.13 -- j1.37
4.09 -- j1.24
4.02 -- j1.10
3.91 -- j0.93
6.05 + j1.24
6.05 + j1.52
6.10 + j1.81
6.23 + j2.10
6.45 + j2.36
6.72 + j2.54
7.02 + j2.64
7.28 + j2.67
7.47 + j2.71
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 17. Series Equivalent Source and Load Impedance — 728--768 MHz
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
12
PACKAGE DIMENSIONS
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
13
RF Device Data
Freescale Semiconductor
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
14
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
15
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
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MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
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MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
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MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
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MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
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MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Sept. 2010
Oct. 2010
•
•
Initial Release of Data Sheet
Added part number MRF8P9040GNR1, ISO and Case Outline 1487--05, p. 1, 19--21
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
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Document Number: MRF8P9040N
Rev. 1,10/2010
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