MRFE6VP5300GNR1 [NXP]
RF Power LDMOS Transistors;
| 型号： | MRFE6VP5300GNR1 |
| 厂家： | 
NXP |
| 描述： | RF Power LDMOS Transistors |
| 文件： | 总25页 (文件大小：1083K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFE6VP5300N
Rev. 1, 6/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
MRFE6VP5300NR1
MRFE6VP5300GNR1
These high ruggedness devices are designed for use in high VSWR
industrial (including laser and plasma exciters), broadcast (analog and digital),
aerospace and radio/land mobile applications. They are unmatched input and
output designs allowing wide frequency range utilization, between 1.8 and
600 MHz.
1.8–600 MHz, 300 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance: VDD = 50 Vdc
P
(W)
Frequency
(MHz)
G
D
out
ps
Signal Type
(dB)
23.8
25.0
27.0
(%)
80.1
70.0
71.0
TO--270WB--4
PLASTIC
MRFE6VP5300NR1
(1,3)
87.5--108
CW
CW
361
300
(2)
230
230
(2)
Pulse (100 sec, 20%
300 Peak
Duty Cycle)
Load Mismatch/Ruggedness
Frequency
TO--270WBG--4
PLASTIC
MRFE6VP5300GNR1
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(1)
98
CW
> 65:1
at all Phase
Angles
3
50
No Device
Degradation
(3 dB
Overdrive)
(2)
230
Pulse
(100 sec, 20%
Duty Cycle)
1.16 Peak
(3 dB
Overdrive)
Drain A
Drain B
3
4
2
1
Gate A
Gate B
1. Measured in 87.5–108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
Wide Operating Frequency Range
Extreme Ruggedness
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated Stability Enhancements
Low Thermal Resistance
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Integrated ESD Protection Circuitry
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
Freescale Semiconductor, Inc., 2014. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +133
–6.0, +10
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
T
J
C
Total Device Dissipation @ T = 25C
P
909
W
C
D
Derate above 25C
4.55
W/C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.22
C/W
JC
CW: Case Temperature 81C, 305 W CW, 50 Vdc, I
= 100 mA, 230 MHz
DQ(A+B)
Thermal Impedance, Junction to Case
Z
0.034
C/W
JC
Pulse: Case Temperature 59C, 300 W Peak, 100 sec Pulse Width,
20% Duty Cycle, 50 Vdc, I = 100 mA, 230 MHz
DQ(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 2500 V
A, passes 150 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate--Source Leakage Current
I
—
133
—
—
140
—
1
—
5
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 50 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
Adc
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
—
10
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 960 Adc)
V
V
1.8
2.2
—
2.3
2.7
2.8
3.2
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.26
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
1.4
63
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
168
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I
= 100 mA, P = 300 W Peak (60 W Avg.),
DQ(A+B) out
DD
f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain
G
26.0
69.0
—
27.0
71.0
–20
28.5
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
IRL
–9
dB
Table 6. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) I
= 100 mA
DQ(A+B)
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
No Device Degradation
DD
230
Pulse
> 65:1 at all
1.16 Peak
50
(100 sec, 20% Duty Cycle)
Phase Angles
(3 dB Overdrive)
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
1.06
500
100
Measured with 30 mV(rms)ac @ 1 MHz
1.05
1.04
1.03
V
= 50 Vdc
DD
500 mA
V
= 0 Vdc
C
iss
GS
I
= 100 mA
DQ(A+B)
1500 mA
1.02
1.01
1
C
oss
2500 mA
0.99
0.98
0.97
10
1
0.96
0.95
0.94
C
rss
-- 5 0
--25
0
25
50
75
100
0
10
V
20
30
40
50
T , CASE TEMPERATURE (C)
, DRAIN--SOURCE VOLTAGE (VOLTS)
C
DS
Note: Each side of device measured separately.
I
(mA)
Slope (mV/C)
DQ
100
–2.651
–2.158
–1.977
–1.787
Figure 2. Capacitance versus Drain--Source Voltage
500
1500
2500
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
8
10
V
= 50 Vdc
DD
I
D
= 6.38 Amps
7
10
10
6
8.04 Amps
9.61 Amps
5
10
10
4
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 4. MTTF versus Junction Temperature -- CW
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
C3 C5
C29
C27
MRFE6VP5300N
Rev. 2
C23
C21
B1
C7
C1
D49840
C19
C25
L1
C11
COAX3
COAX1
L4
C17
C18
C9
C14
C16
C13
L3
C15
C10
L5
COAX4
C28
COAX2
C12
L2
C26
C20
C2
B2
C22
C24
C8
C30
C4 C6
Figure 5. MRFE6VP5300NR1 Narrowband Test Circuit Component Layout — 230 MHz
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
Table 7. MRFE6VP5300NR1 Narrowband Test Circuit Component Designations and Values — 230 MHz
Part
Description
Part Number
Manufacturer
B1, B2
C1, C2
C3, C4
C5, C6
C7, C8
Small Ferrite Beads, Surface Mount
2743019447
Fair-Rite
22 F, 35 V Tantulum Capacitors
0.1 F Chip Capacitors
220 nF Chip Capacitors
2.2 F Chip Capacitors
1000 pF Chip Capacitors
75 pF Chip Capacitor
T491X226K035AT
CDR33BX104AKWS
C1812C224K5RACTU
C1825C225J5RACTU
ATC100B102JT50XT
ATC100B750JT500XT
ATC100B681JT200XT
ATC100B820JT500XT
ATC100B8R2CT500XT
ATC100B110JT500XT
ATC100B241JT200XT
C1812F104K1RACTU
CDR33BX104AKWS
2225X7R225KJT3AB
MCGPR63V477M13X26-RH
UT-141C-25
Kemet
AVX
Kemet
Kemet
ATC
C9, C10, C11, C12
C13
ATC
C14, C15
C16
680 pF Chip Capacitors
82 pF Chip Capacitor
ATC
ATC
C17
8.2 pF Chip Capacitor
ATC
C18
11 pF Chip Capacitor
ATC
C19, C20
C21, C22
C23, C24
C25, C26
C27, C28, C29, C30
Coax1, 2, 3, 4
L1, L2
240 pF Chip Capacitors
0.10 F Chip Capacitors
0.1 F Chip Capacitors
2.2 F Chip Capacitors
470 F, 63 V Electrolytic Capacitors
25 Semi Rigid Coax, 2.4
12 nH Inductors, 3 Turns
22 nH Inductor
ATC
Kemet
AVX
ATC
Multicomp
Micro-Coax
Coilcraft
Coilcraft
Coilcraft
MTL
GA3094-ALC
L3
1812SMS-22NJLC
GA3095-ALC
L4, L5
17.5 nH Inductors, 4 Turns
PCB
Arlon AD255A 0.030, = 2.55
D49840
r
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
6
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS — 230 MHz
350
300
250
V
= 50 Vdc, f = 230 MHz
DD
Pulse Width = 100 sec, 20% Duty Cycle
P
= 0.64 W
in
200
150
100
P
= 0.32 W
in
50
0
0
0.5
1
1.5
2
2.5
3
3.5
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 7. Output Power versus Gate--Source
Voltage at a Constant Input Power
60
58
56
54
52
50
48
46
90
80
70
60
50
40
30
20
10
31
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
DD
DQ(A+B)
DD
DQ(A+B)
Pulse Width = 100 sec, 20% Duty Cycle
Pulse Width = 100 sec, 20% Duty Cycle
30
29
D
I
= 900 mA
DQ(A+B)
28
27
26
25
24
23
600 mA
300 mA
100 mA
44
42
40
900 mA
100
G
ps
600 mA
300 mA
100 mA
16
18
20
22
24
26
28
30
32
10
500
P , INPUT POWER (dBm)
in
P
, OUTPUT POWER (WATTS) PEAK
out
f
Figure 9. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
P1dB
(W)
P3dB
(W)
(MHz)
230
313
370
Figure 8. Output Power versus Input Power
29
28
27
26
30
29
90
80
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
-- 4 0 _C
DD
DQ(A+B)
Pulse Width = 100 sec, 20% Duty Cycle
28
27
26
25
24
25_C 70
T
= --40_C
C
60
50
40
30
25
24
50 V
45 V
D
85_C
25_C
85_C
23
22
21
20
19
40 V
35 V
I
G
ps
V
= 30 V
100
DD
= 100 mA, f = 230 MHz
20
10
DQ(A+B)
23
22
Pulse Width = 100 sec, 20% Duty Cycle
0
50
150 200 250 300 350
400
10
100
, OUTPUT POWER (WATTS) PEAK
500
P
, OUTPUT POWER (WATTS) PEAK
P
out
out
Figure 11. Power Gain versus Output Power
and Drain--Source Voltage
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
8
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
V
= 50 Vdc, I = 100 mA, P = 300 W Peak
DQ(A+B) out
DD
f
Z
Z
load
source
MHz
230
1.50 – j10.70
8.30 + j6.90
Z
Z
= Test circuit impedance as measured from
gate to gate, balanced configuration.
source
= Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
load
Z
Z
source
Figure 12. Narrowband Series Equivalent Source and Load Impedance — 230 MHz
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 9. 87.5–108 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
V
= 50 Vdc, I
= 100 mA, P = 1.5 W, CW
DQ(A+B) in
DD
Frequency
G
D
P
out
ps
(MHz)
87.5
98
(dB)
24.4
24.3
23.8
(%)
80.1
81.8
80.5
(W)
415
404
361
108
Table 10. Load Mismatch/Ruggedness (In Freescale Reference Circuit, 50 ohm system) I
= 100 mA
DQ(A+B)
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
98
CW
> 65:1
3
50
No Device
at all Phase Angles
(3 dB Overdrive)
Degradation
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
10
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
COAX1
R6*
R5*
R8
R4*
C1*
U1*
C16
R11*
R10*
C13
C12
C14 C15
C3*
+
R3*
D59349
R7*
C2*
R1*
R2*
C11
U2*
R9
C6
C4
C8
C9
Q1
T1
C5
L1
C17
C7
COAX3
MRFE6VP5300N
Rev. 1
COAX2
Note: Component number C10 is not used.
* Bias Regulator and Temperature Compensation. Refer to AN1643, RF LDMOS Power Modules for GSM Base Station
Application: Optimum Biasing Circuit. Go to http://www.freescale.com/rf. Select Documentation/Application Notes – AN1643.
Figure 13. MRFE6VP5300NR1 Broadband Reference Circuit Component Layout — 87.5–108 MHz
MRFE6VP5300NR1 MRFE6VP5300GNR1
11
RF Device Data
Freescale Semiconductor, Inc.
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 11. MRFE6VP5300NR1 Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz
Part
Description
Part Number
Manufacturer
C1, C2
C3
1 F Chip Capacitors
GRM31CR72A105KA01L
Murata
10 nF Chip Capacitor
150 pF Chip Capacitor
20 pF Chip Capacitor
1000 pF Chip Capacitors
560 pF Chip Capacitor
10 nF Chip Capacitor
47 nF Chip Capacitor
470 nF Chip Capacitor
10 F Chip Capacitors
470 F, 63 V Electrolytic Capacitor
20 pF Chip Capacitor
35 Flex Cable, 4.72
50 Flex Cable, 6.3
ATC200B103KT50XT
ATC100B151JT300XT
ATC100B200JT500XT
ATC200B102KT50XT
ATC100B561KT50XT
GCJ216R72A103KA01D
GCJ21BR72A473KA01L
GRM31MR72A474KA01L
C5750X7S2A106M230KB
MCGPR63V477M13X26
ATC100B200JT500XT
HSF-141
ATC
C4
ATC
C5
ATC
C6, C8, C9
C7
ATC
ATC
C11
Murata
Murata
Murata
TDK
C12
C13
C14, C15
C16
Multicomp
ATC
C17
Coax1, 2
Coax3
L1
Hongsen Cable
Huber Suhner
SM141
5 Turns, #16 AWG ID = 0.315/8 mm Inductor,
Copper Wire
Hand Wound
Q1
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
R11
T1
RF Power LDMOS Transistor
2.2 k, 1/8 W Chip Resistor
390 , 1/8 W Chip Resistor
10 , 1/8 W Chip Resistor
MRFE6VP5300NR1
CRCW08052K20FKEA
CRCW0805390RFKEA
CRCW080510R0FKEA
CRCW08051K00FKEA
CRCW08052K70FKEA
CRCW0805200RFKEA
3224W-1-502E
Freescale
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Bourns
Vishay
Vishay
Vishay
Vishay
Fair-Rite
1.0 k, 1/8 W Chip Resistor
2.7 k, 1/8 W Chip Resistor
200 , 1/8 W Chip Resistor
5.0 k Multi-turn Cermet Trimmer Potentiometer
10 , 1/4 W Chip Resistor
CRCW120610R0FKEA
CRCW1206240RFKEA
CRCW12104K70FKEA
CRCW12105K10FKEA
2861000202
240 , 1/4 W Chip Resistor
4.7 k, 1/2 W Chip Resistor
5.1 k, 1/2 W Chip Resistor
61 Material Binocular Core Ferrite (9:1) with
24 AWG 1 Turn Primary, 24 AWG 3 Turns
Secondary, Hand Wound
U1
Voltage Regulator 5 V, Micro8
NPN Bipolar Transistor
LP2951ACDMR2G
BC847ALT1G
D59349
ON Semiconductor
ON Semiconductor
MTL
U2
PCB
Rogers RO4350B, 0.030, = 3.66
r
Note: Component number C10 is not used.
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
12
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
TYPICAL CHARACTERISTICS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
26
90
80
70
V
= 50 Vdc, P = 1.5 W, I
= 100 mA
DD
in
DQ(A+B)
25.5
25
D
24.5
24
60
50
23.5
23
450
400
G
ps
22.5
22
350
300
P
out
86 88 90 92 94 96 98 100 102 104 106 108 110
f, FREQUENCY (MHz)
Figure 15. Power Gain, Drain Efficiency and CW Output
Power versus Frequency at a Constant Input Power
450
350
300
V
P
= 50 Vdc
V
P
= 50 Vdc
DD
in
DD
in
400
350
300
250
= 0.5 W
= 1.0 W
250
200
f = 98 MHz
f = 98 MHz
108 MHz
108 MHz
200
150
100
50
150
100
50
87.5 MHz
87.5 MHz
0
0
0
0.5
1
1.5
V , GATE--SOURCE VOLTAGE (VOLTS)
GS
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 16. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
Figure 17. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
14
TYPICAL CHARACTERISTICS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
60
V
= 50 Vdc
DD
58
56
54
52
50
48
46
44
l
= 100 mA
DQ(A+B)
f = 98 MHz
108 MHz
87.5 MHz
20
22
24
26
28
30
32
34
P , INPUT POWER (dBm)
in
f
P1dB
(W)
P3dB
(W)
(MHz)
87.5
98
346
293
240
429
379
355
108
Figure 18. CW Output Power versus Input Power
30
90
D
V
= 50 Vdc
DD
28
26
24
22
20
18
16
80
70
60
50
40
30
20
l
= 100 mA
DQ(A+B)
f = 98 MHz
108 MHz
87.5 MHz
G
ps
108 MHz
98 MHz
87.5 MHz
30
50
100
200
300
500
P
, OUTPUT POWER (WATTS)
out
Figure 19. Power Gain and Drain Efficiency
versus CW Output Power
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Z = 25
o
Z
source
f = 87.5 MHz
f = 108 MHz
f = 87.5 MHz
f = 108 MHz
Z
load
V
= 50 Vdc, I = 100 mA, P = 300 W CW
DQ(A+B) out
DD
f
Z
Z
load
source
MHz
87.5
92
10.3 + j14.4
11.5 + j15.8
12.6 + j17.0
13.9 + j18.2
15.5 + j19.6
17.2 + j20.9
13.7 + j8.15
14.2 + j8.09
14.7 + j8.04
15.2 + j7.99
15.7 + j7.94
16.2 + j7.89
96
100
104
108
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured
from drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
Z
Z
source
load
Figure 20. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
16
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
Sweep 10 of 10
10.0
F1
H2
100 MHz
200 MHz --45.2 dB
Fundamental (F1)
H3 300 MHz --17.7 dB
0.0
--10.0
--20.0
--30.0
--40.0
--50.0
--60.0
--70.0
H4
400 MHz --52.9 dB
500 MHz --29.0 dB
H5
H3
H5
11.984 sps
11.851 fps
H3
H4
H5
H2
(200 MHz)
(300 MHz) (400 MHz) (500 MHz)
H2
H4
–45.2 dB
–17.7 dB –52.9 dB –29.0 dB
Span: 600 MHz
Center: 300 MHz
Figure 21. 100 MHz Harmonics @ 300 W CW
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
PACKAGE DIMENSIONS
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
18
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
20
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
21
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
22
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
23
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1643: RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Mar. 2014
June 2014
Initial Release of Data Sheet
Typical Performance table, 87.5–108 MHz: updated output power, gain and eff. values to reflect
performance of circuit, p. 1
Functional Tests table, narrowband circuit: corrected output power from (30 W Avg.) to (60 W Avg.), p. 3
Table 9, 87.5–108 MHz Reference Circuit Broadband Performance table: updated all values to reflect
performance of circuit, p. 10
Fig. 13, Broadband Reference Circuit Component Layout — 87.5–108 MHz: updated layout to increase
ease of use, p. 11
Table 11, Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz: updated
R2 and R11 resistors, p. 12
Fig. 14, Broadband Reference Circuit Schematic — 87.5–108 MHz: updated schematic to reflect
temperature compensation, p. 13
MRFE6VP5300NR1 MRFE6VP5300GNR1
RF Device Data
Freescale Semiconductor, Inc.
24
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
How to Reach Us:
Home Page:
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Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
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Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their
respective owners.
E 2014 Freescale Semiconductor, Inc.
Document Number: MRFE6VP5300N
Rev. 1, 6/2014
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