MRFE6VP5600HSR6 [NXP]
RF Power Field Effect Transistors;
| 型号： | MRFE6VP5600HSR6 |
| 厂家： | 
NXP |
| 描述： | RF Power Field Effect Transistors 放大器 CD 晶体管 |
| 文件： | 总13页 (文件大小：982K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFE6VP5600H
Rev. 1, 1/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
High Ruggedness N--Channel
MRFE6VP5600HR6
MRFE6VP5600HSR6
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
1.8--600 MHz, 600 W CW, 50 V
LATERAL N--CHANNEL
BROADBAND
•
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
P
(W)
f
G
(dB)
η
(%)
IRL
(dB)
out
ps
D
RF POWER MOSFETs
Signal Type
(MHz)
Pulsed (100 μsec,
600 Peak
230
25.0
74.6
-- 1 8
20% Duty Cycle)
CW
600 Avg.
230
24.6
75.2
-- 1 7
•
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
•
CASE 375D--05, STYLE 1
NI--1230
Features
•
•
•
•
•
•
Unmatched Input and Output Allowing Wide Frequency Range Utilization
MRFE6VP5600HR6
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP5600HSR6
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
PARTS ARE PUSH--PULL
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +130
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
°C
RF /V
RF /V
out DS
3
4
1
2
in GS
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
V
DSS
V
GS
T
stg
RF /V
out DS
RF /V
in GS
T
C
°C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
1667
8.33
W
W/°C
C
D
(Top View)
(1,2)
Figure 1. Pin Connections
Operating Junction Temperature
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol Value
Unit
Thermal Resistance, Junction to Case
°C/W
Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz
Z
R
0.022
0.12
θ
JC
θ
JC
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Off Characteristics
Gate--Source Leakage Current
I
—
130
—
—
—
—
—
1
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 100 mA)
V
—
10
20
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
μAdc
μAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(1)
Gate Threshold Voltage
(V = 10 Vdc, I = 960 μAdc)
V
V
1.7
2.0
—
2.2
2.5
2.7
3.0
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)
DD
D
(1)
Drain--Source On--Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.26
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
1.60
129
342
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 600 W Peak (120 W Avg.), f = 230 MHz,
DD
DQ
out
Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G
23.5
73.5
—
25.0
74.6
-- 1 8
26.5
—
dB
%
ps
D
Drain Efficiency
η
Input Return Loss
IRL
-- 1 2
dB
1. Each side of device measured separately.
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
2
V
BIAS
+
C10 C11 C12 C13
R1
COAX1
Z11
Z13
Z3
Z4
Z5
Z6
Z7
Z9
L1
L2
RF
INPUT
C2
C3
Z1
Z2
C4
Z8
C5
Z10
Z14
Z12
R2
C1
COAX2
V
BIAS
+
C6
C7
C8
C9
V
SUPPLY
+
+
+
L3
C22 C23
C24 C25
Z19
Z17
COAX3
C16
C17
Z15 Z21 Z23
Z25
Z27
Z29
RF
OUTPUT
Z31
Z32
DUT
C14
C15
Z26
C20
Z30
C21
Z16
Z22 Z24
Z28
C18
C19
Z18
Z20
COAX4
L4
V
+
+
+
SUPPLY
C26 C27
C28 C29
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
0.192″ x 0.082″ Microstrip
0.175″ x 0.082″ Microstrip
0.170″ x 0.100″ Microstrip
0.116″ x 0.285″ Microstrip
0.116″ x 0.285″ Microstrip
0.108″ x 0.285″ Microstrip
Z11*, Z12* 0.872″ x 0.058″ Microstrip
Z23, Z24
Z25, Z26
Z27, Z28
Z29, Z30
Z31
1.251″ x 0.300″ Microstrip
0.127″ x 0.300″ Microstrip
0.058″ x 0.300″ Microstrip
0.058″ x 0.300″ Microstrip
0.186″ x 0.082″ Microstrip
0.179″ x 0.082″ Microstrip
Z13, Z14
Z15, Z16
0.412″ x 0.726″ Microstrip
0.371″ x 0.507″ Microstrip
Z17*, Z18* 0.466″ x 0.363″ Microstrip
Z19*, Z20* 1.187″ x 0.154″ Microstrip
Z9, Z10
Z21, Z22
0.104″ x 0.507″ Microstrip
Z32
* Line length includes microstrip bends
Figure 1. MRFE6VP5600HR6(HSR6) Test Circuit Schematic -- Pulsed
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
3
C23
C24
C25
C10
C11
C12
C13
C22
COAX1
COAX3
R1
L3
C16
C4
C2
L1
L2
C17
C14
C15
C5
C20
C18
C19
C3
R2
C1
C21
L4
COAX2
C6
COAX4
C26
C9
C8
C7
C27
C28
C29
MRFE6VP5600H
Rev. 1
Figure 2. MRFE6VP5600HR6(HSR6) Test Circuit Component Layout -- Pulsed
Table 5. MRFE6VP5600HR6(HSR6) Test Circuit Component Designations and Values -- Pulsed
Part
Description
Part Number
ATC100B120JT500XT
ATC100B270JT500XT
27291SL
Manufacturer
ATC
C1
12 pF Chip Capacitor
C2, C3
C4
27 pF Chip Capacitors
ATC
0.8--8.0 pF Variable Capacitor, Gigatrim
33 pF Chip Capacitor
Johanson
ATC
C5
ATC100B330JT500XT
T491X226K035AT
CDR33BX104AKYS
C1812C224K5RACTU
ATC100B102JT50XT
ATC100B360JT500XT
ATC100B510GT500XT
ATC100B241JT200XT
ATC100B390JT500XT
ATC100B100JT500XT
MCGPR63V477M13X26--RH
UT--141C--25
C6, C10
C7, C11
C8, C12
22 μF, 35 V Tantalum Capacitors
0.1 μF Chip Capacitors
220 nF Chip Capacitors
1000 pF Chip Capacitors
36 pF Chip Capacitor
Kemet
AVX
Kemet
ATC
C9, C13, C22, C26
C14
ATC
C15
51 pF Chip Capacitor
ATC
C16, C17, C18, C19
240 pF Chip Capacitors
39 pF Chip Capacitor
ATC
C20
C21
ATC
10 pF Chip Capacitor
ATC
C23, C24, C25, C27, C28, C29 470 μF, 63 V Electrolytic Capacitors
Multicomp
Micro Coax
Coilcraft
Coilcraft
Vishay
Arlon
Coax1, 2, 3, 4
L1, L2
25 Ω Semi Rigid Coax, 2.2″ Long
5 nH Inductors
A02TKLC
L3, L4
6.6 nH Inductors
GA3093--ALC
R1, R2
PCB
10 Ω Chip Resistors
CRCW120610R0JNEA
AD255A
0.030″, ε = 2.55
r
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
1000
100
10
64
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
DD
C
iss
Pulse Width = 100 μsec, 20% Duty Cycle
63
62
61
60
59
58
57
C
P3dB = 58.3 dBm (679 W)
P2dB = 58.2 dBm (664 W)
oss
Ideal
Measured with ±30 mV(rms)ac @ 1 MHz
V
= 0 Vdc
GS
P1dB = 58.0 dBm
(632 W)
Actual
C
rss
1
0
10
20
30
40
50
31
32
33
34
35
36
37
P , INPUT POWER (dBm) PULSED
in
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
Figure 4. Pulsed Output Power versus
Input Power
Note: Each side of device measured separately.
Figure 3. Capacitance versus Drain--Source Voltage
27
26
25
24
23
27
26
25
24
23
90
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
DD
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
DD
Pulse Width = 100 μsec, 20% Duty Cycle
80
70
60
Pulse Width = 100 μsec, 20% Duty Cycle
G
ps
22
21
20
19
50
40
30
20
50 V
45 V
22
21
20
40 V
η
D
35 V
18
17
V
= 30 V
200
DD
40
100
, OUTPUT POWER (WATTS) PULSED
1000
0
100
300
400
500
600
700
P
P
, OUTPUT POWER (WATTS) PULSED
out
out
Figure 6. Pulsed Power Gain versus
Output Power
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
27
26
25
24
23
90
80
70
60
50
40
30
20
90
80
70
60
50
25_C
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
DD
45 V
40 V
35 V
50 V
V
= 30 V
Pulse Width = 100 μsec, 20% Duty Cycle
DD
85_C
-- 3 0 _C
G
ps
T
= --30_C
C
25_C
22
21
20
40
η
D
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
Pulse Width = 100 μsec, 20% Duty Cycle
DD
85_C
30
20
0
100
200
300
400
500
600
700
40
100
P , OUTPUT POWER (WATTS) PULSED
out
1000
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 7. Pulsed Drain Efficiency versus
Output Power
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
9
8
10
10
7
6
5
10
10
10
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 600 W Avg., and η = 75.2%.
DD
out
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF versus Junction Temperature — CW
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
6
Z
source
Z = 10 Ω
o
f = 230 MHz
f = 230 MHz
Z
load
V
= 50 Vdc, I = 100 mA, P = 600 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
230
1.78 + j5.45
2.75 + j5.30
Z
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 10. Series Equivalent Source and Load Impedance
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
8
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
9
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
10
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRFE6VP5600H and MRFE6VP5600HS parts will be available for 2 years after release of
MRFE6VP5600H and MRFE6VP5600HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRFE6VP5600H and MRFE6VP5600HS in the R6 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Dec. 2010
Jan. 2011
•
•
Initial Release of Data Sheet
Fig. 1, Pin Connections, corrected pin 4 label from RF /V to RF /V , p. 1
out GS
in GS
MRFE6VP5600HR6 MRFE6VP5600HSR6
RF Device Data
Freescale Semiconductor
12
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Document Number: MRFE6VP5600H
Rev. 1,1/2011
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