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元器件品牌
MRFE6VP61K25HR6
[FREESCALE]
RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs; 射频功率场效应晶体管增强 - 模式横向的MOSFET
元器件型号：
MRFE6VP61K25HR6
生产厂家：
FREESCALE SEMICONDUCTOR, INC
描述和应用：
RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs
射频功率场效应晶体管增强 - 模式横向的MOSFET
晶体 晶体管 功率场效应晶体管 射频 CD 放大器 局域网
PDF文件：
总13页 (文件大小：928K)
下载文档：
下载PDF数据表文档文件
型号参数：MRFE6VP61K25HR6参数
查看货源
MRFE6VP61K25HR6_11
RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs
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25
FREESCALE
MRFE6VP61K25HR6_12
RF Power LDMOS Transistors
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34
FREESCALE
MRFE6VP61K25HSR5
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
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FREESCALE
MRFE6VP61K25HSR6
RF Power LDMOS Transistors
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FREESCALE
MRFE6VP61K25HSR6
RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs
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16
FREESCALE
MRFE6VP61K25HSR6
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN
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156
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2
PHILIPS
MRFE6VP6300HR3
RF Power Field Effect Transistors
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156
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119
FREESCALE
MRFE6VP6300HR3_11
RF Power Field Effect Transistors
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156
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19
FREESCALE
MRFE6VP6300HSR3
RF Power Field Effect Transistors
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: Undefined variable $rtag in
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156
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25
FREESCALE
MRFE6VP8600H
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
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: Undefined variable $rtag in
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156
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138
FREESCALE
MRFE6VP8600HR5
LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V
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156
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3
PHILIPS
MRFE6VP8600HSR5
LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V
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: Undefined variable $rtag in
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156
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0
PHILIPS
MRFE6VS25N
RF Power LDMOS Transistor
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156
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118
FREESCALE
MRFE6VS25NR1
RF Power LDMOS Transistor
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: Undefined variable $rtag in
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156
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65
FREESCALE
MRFE8VP8600H
MRFE8VP8600H
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156
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1
PHILIPS
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