MRFG35010AR1 [NXP]
S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN;
| 型号： | MRFG35010AR1 |
| 厂家： | 
NXP |
| 描述： | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN 局域网 放大器 光电二极管 晶体管 |
| 文件： | 总18页 (文件大小：415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFG35010A
Rev. 2, 12/2008
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
use in Class AB or Class A linear base station applications.
MRFG35010AR1
• Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, IDQ
140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain —10 dB
=
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
Drain Efficiency — 25%
ACPR @ 5 MHz Offset — -43 dBc in 3.84 MHz Channel Bandwidth
• 10 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
CASE 360D-02, STYLE 1
NI-360HF
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
dBm
°C
Drain-Source Voltage
Gate-Source Voltage
RF Input Power
V
15
DSS
V
-5
33
GS
P
in
Storage Temperature Range
T
stg
-65 to +150
175
(1)
Channel Temperature
T
ch
°C
Table 2. Thermal Characteristics
Characteristic
(1, 2)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°C/W
Case Temperature 81°C, 10 W CW
Case Temperature 79°C, 1 W CW
Class AB
Class A
4.0
4.1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1C (Minimum)
A (Minimum)
III (Minimum)
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(V = 3.5 Vdc, V = 0 Vdc)
I
—
2.9
—
Adc
DSS
GSS
DSO
DS
GS
Off State Leakage Current
(V = -0.4 Vdc, V = 0 Vdc)
I
—
—
< 1
0.09
5
100
1
μAdc
mAdc
mAdc
Vdc
GS
DS
Off State Drain Current
I
(V = 12 Vdc, V = -2.2 Vdc)
DS
GS
Off State Current
I
—
15
DSX
(V = 28.5 Vdc, V = -2.5 Vdc)
DS
GS
Gate-Source Cut-off Voltage
(V = 3.5 Vdc, I = 15 mA)
V
GS(th)
V
GS(Q)
-1.2
-1.2
-0.8
-0.8
-0.7
-0.7
DS
DS
Quiescent Gate Voltage
(V = 12 Vdc, I = 180 mA)
Vdc
DS
D
(1)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
V
DD
= 12 Vdc, I = 140 mA, P = 1 W Avg., f = 3550 MHz,
DQ out
Single-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
9
10
25
—
—
dB
%
ps
D
Drain Efficiency
h
23
—
Adjacent Channel Power Ratio
ACPR
-43
-40
dBc
Typical RF Performance (In Freescale Test Fixture, 50 ohm system) V = 12 Vdc, I = 140 mA, f = 3550 MHz
DD
DQ
Output Power, 1 dB Compression Point, CW
P1dB
—
10
—
W
1. Measurements made with device in test fixture.
MRFG35010AR1
RF Device Data
Freescale Semiconductor
2
V
V
SUPPLY
R2
BIAS
C13
C8
C7
C6
C5
C12 C11
C10 C9
C4
C3
C2
C14
C15
C16
R1
Z8
Z9
Z10
Z11
Z13 Z14 Z15 Z16
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z12
Z17
C17
C1
Z1
0.044″ x 0.250″ Microstrip
0.044″ x 0.030″ Microstrip
0.615″ x 0.050″ Microstrip
0.044″ x 0.070″ Microstrip
0.270″ x 0.490″ Microstrip
0.044″ x 0.470″ Microstrip
0.434″ x 0.110″ Microstrip
0.015″ x 0.527″ Microstrip
Z9, Z10
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.290″ x 90° Microstrip Radial Stub
0.184″ x 0.390″ Microstrip
0.040″ x 0.580″ Microstrip
0.109″ x 0.099″ Microstrip
0.030″ x 0.225″ Microstrip
0.080″ x 0.240″ Microstrip
0.044″ x 0.143″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z11
Rogers 4350, 0.020″, ε = 3.5
r
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part
Description
6.8 pF Chip Capacitors
Part Number
100A6R81BW150XT
100A100JW150XT
100A101JW150XT
100B101JW500XT
100B102JW500XT
200B104KW50XT
200B393KW50XT
GRM55DR61H106KA88B
P51ETR-ND
Manufacturer
C1, C17
C2, C16
C3, C15
ATC
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.1 μF Chip Capacitors
39K Chip Capacitors
ATC
ATC
C4, C13, C14
C5, C12
C6, C11
C7, C10
C8, C9
ATC
ATC
ATC
ATC
10 μF, 50 V Chip Capacitors
50 Ω Chip Resistors
Murata
Newark
R1, R2
MRFG35010AR1
RF Device Data
Freescale Semiconductor
3
C8
C9
R2
C13
C12 C11 C10
C7 C6 C5
C4
C3
C2
C14
C15
C16
R1
C1
C17
MRFG35010, Rev. 8
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35010AR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
60
50
40
14
12
G
T
V = 12 Vdc, I = 140 mA, f = 3550 MHz
Single−Carrier W−CDMA
DS
DQ
10
8
3.84 MHz Channel Bandwidth
Γ = 0.850 ∠ −138.7_
30
20
10
0
S
Γ = 0.827 ∠ −157.6_
L
6
4
η
D
2
10
15
20
25
30
35
40
P
, OUTPUT POWER (dBm)
out
Figure 3. Single-Carrier W-CDMA Power Gain
and Drain Efficiency versus Output Power
−10
−20
−30
−40
0
V
= 12 Vdc, I = 140 mA, f = 3550 MHz
DQ
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
DS
−5
Γ = 0.850 ∠ −138.7_, Γ = 0.827 ∠ −157.6_
S
L
−10
−15
−20
−25
IRL
−50
−60
ACPR
15
20
25
30
35
40
P
, OUTPUT POWER (dBm)
out
Figure 4. Single-Carrier W-CDMA ACPR and
Input Return Loss versus Output Power
NOTE: All data is referenced to package lead interface. ΓS andΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35010AR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
14
60
V
= 12 Vdc, I = 140 mA, f = 3550 MHz, Single−Carrier
DQ
DS
W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
12
10
8
50
40
G
ps
30
20
10
0
6
4
2
η
D
20
24
28
32
36
40
P
, OUTPUT POWER (dBm)
out
Figure 5. Single-Carrier W-CDMA Power Gain
and Drain Efficiency versus Output Power
−20
−30
−10
−15
−20
−25
−30
V
= 12 Vdc, I = 140 mA, f = 3550 MHz
DQ
DS
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
−40
−50
−60
ACPR
20
24
28
32
36
40
P
, OUTPUT POWER (dBm)
out
Figure 6. Single-Carrier W-CDMA ACPR and
Input Return Loss versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35010AR1
RF Device Data
Freescale Semiconductor
6
Z = 25 Ω
o
Z
load
f = 3550 MHz
Z
source
f = 3550 MHz
V
= 12 Vdc, I = 140 mA, P = 1 W Avg.
DQ out
DD
f
Z
Z
load
W
source
W
MHz
3550
4.6 - j18.7
4.9 - j9.8
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 7. Series Equivalent Source and Load Impedance
MRFG35010AR1
RF Device Data
Freescale Semiconductor
7
Table 6. Class AB Common Source S-Parameters (V = 12 Vdc, I = 1000 mA, T = 25°C, 50 ohm system)
DD
DQ
C
S
S
S
S
22
11
21
12
f
GHz
|S
|
∠ φ
|S
|
∠ φ
89.9
87.6
85.6
83.8
82.2
80.6
79.0
77.6
76.2
74.8
73.4
72.0
70.7
69.4
68.1
66.8
65.4
64.2
62.8
61.6
60.3
59.0
57.7
56.5
55.2
53.9
52.6
51.3
50.1
48.9
47.6
46.4
44.6
43.3
42.0
40.7
39.4
38.0
36.7
35.4
34.0
32.7
31.3
29.9
28.6
|S
|
∠ φ
16.6
18.3
19.5
20.0
22.4
22.7
23.9
26.0
26.9
28.0
29.2
30.6
31.6
32.0
33.0
33.8
34.1
34.7
35.5
35.3
35.9
36.1
36.7
36.9
37.4
37.8
37.4
38.1
37.7
37.8
37.9
37.9
37.5
37.3
37.2
37.2
36.9
36.4
36.4
36.0
35.9
35.5
34.9
34.2
34.3
|S |
22
∠ φ
11
21
12
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
0.959
0.959
0.956
0.959
0.959
0.959
0.959
0.959
0.958
0.958
0.958
0.958
0.958
0.957
0.957
0.957
0.958
0.956
0.956
0.956
0.955
0.955
0.955
0.954
0.954
0.953
0.953
0.952
0.953
0.952
0.951
0.952
0.948
0.947
0.947
0.945
0.945
0.945
0.944
0.943
0.942
0.941
0.939
0.939
0.937
-171.4
-173.7
-175.6
-177.2
-178.5
-179.6
179.3
178.4
177.5
176.7
175.8
175.1
174.3
173.5
172.9
172.2
171.5
170.9
170.1
169.5
168.8
168.1
167.5
166.8
166.2
165.5
164.8
164.1
163.2
162.6
161.8
161.0
161.6
160.9
160.3
159.5
158.9
158.1
157.5
156.8
156.0
155.2
154.6
153.8
153.0
9.867
8.220
7.055
6.192
5.509
4.969
4.525
4.157
3.844
3.578
3.347
3.147
2.971
2.814
2.675
2.551
2.439
2.336
2.244
2.159
2.083
2.013
1.948
1.888
1.832
1.779
1.730
1.683
1.641
1.598
1.559
1.517
1.549
1.521
1.494
1.470
1.447
1.426
1.407
1.389
1.371
1.355
1.341
1.328
1.316
0.0083
0.0086
0.0083
0.0088
0.0089
0.0089
0.0091
0.0094
0.0095
0.0098
0.0099
0.0103
0.0107
0.0108
0.0111
0.0114
0.0117
0.0119
0.0124
0.0126
0.0129
0.0133
0.0136
0.0139
0.0143
0.0147
0.0151
0.0154
0.0158
0.0161
0.0164
0.0167
0.0178
0.0183
0.0189
0.0194
0.0198
0.0204
0.0209
0.0215
0.0220
0.0226
0.0234
0.0238
0.0245
0.784
0.784
0.784
0.783
0.782
0.781
0.781
0.780
0.779
0.779
0.778
0.777
0.776
0.776
0.775
0.774
0.774
0.773
0.773
0.772
0.772
0.772
0.771
0.771
0.770
0.770
0.769
0.769
0.769
0.769
0.769
0.769
0.760
0.759
0.757
0.756
0.754
0.754
0.752
0.751
0.749
0.749
0.745
0.744
0.742
-178.9
-179.6
179.7
179.2
178.7
178.2
177.8
177.4
177.0
176.7
176.3
176.0
175.6
175.3
174.9
174.6
174.3
173.9
173.6
173.2
173.0
172.6
172.3
171.9
171.7
171.4
171.1
170.9
170.6
170.5
170.3
170.3
167.3
166.8
166.4
165.9
165.6
165.1
164.7
164.2
163.8
163.2
162.9
162.5
162.1
(continued)
MRFG35010AR1
RF Device Data
Freescale Semiconductor
8
Table 6. Class AB Common Source S-Parameters (V = 12 Vdc, I = 1000 mA, T = 25°C, 50 ohm system) (continued)
DD
DQ
C
S
S
S
S
22
11
21
12
f
GHz
|S
|
∠ φ
|S
|
∠ φ
27.2
25.8
24.4
23.0
21.6
20.1
18.7
17.2
15.7
14.2
12.7
11.2
9.7
|S
|
∠ φ
33.8
33.4
32.7
32.1
31.7
31.5
30.6
29.9
29.2
28.6
27.8
27.1
26.3
25.3
24.7
23.4
22.2
20.8
20.0
19.5
18.4
17.3
16.3
15.1
14.1
13.0
11.3
10.3
9.1
|S |
22
∠ φ
11
21
12
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
3.75
3.80
3.85
3.90
3.95
4.00
4.05
4.10
4.15
4.20
4.25
4.30
4.35
4.40
4.45
4.50
4.55
4.60
4.65
0.936
0.935
0.933
0.933
0.930
0.929
0.926
0.925
0.924
0.921
0.919
0.916
0.915
0.912
0.908
0.905
0.903
0.899
0.896
0.893
0.890
0.885
0.881
0.876
0.872
0.871
0.862
0.856
0.850
0.845
0.838
0.831
0.822
0.816
0.808
0.801
0.792
0.783
0.775
0.765
0.754
0.743
0.731
0.718
152.2
151.4
150.5
149.8
149.0
148.1
147.2
146.3
145.3
144.4
143.5
142.5
141.4
140.5
139.4
138.3
137.1
136.0
134.8
133.6
132.3
131.0
129.6
128.1
126.7
125.1
123.7
122.0
120.3
118.6
116.7
114.8
112.9
110.8
108.6
106.4
104.1
101.6
99.0
1.305
1.296
1.287
1.279
1.272
1.266
1.261
1.257
1.254
1.251
1.249
1.249
1.247
1.249
1.250
1.252
1.256
1.260
1.265
1.271
1.278
1.284
1.292
1.301
1.311
1.322
1.333
1.346
1.360
1.375
1.389
1.405
1.422
1.441
1.460
1.480
1.500
1.523
1.545
1.567
1.590
1.611
1.634
1.659
0.0250
0.0258
0.0264
0.0273
0.0280
0.0288
0.0297
0.0306
0.0314
0.0324
0.0333
0.0343
0.0355
0.0366
0.0377
0.0390
0.0400
0.0413
0.0422
0.0434
0.0450
0.0464
0.0478
0.0494
0.0510
0.0530
0.0543
0.0563
0.0583
0.0605
0.0624
0.0646
0.0671
0.0696
0.0721
0.0747
0.0774
0.0804
0.0832
0.0861
0.0894
0.0924
0.0955
0.0989
0.740
0.738
0.737
0.736
0.733
0.730
0.728
0.725
0.722
0.720
0.717
0.715
0.710
0.708
0.705
0.701
0.698
0.694
0.690
0.686
0.682
0.678
0.673
0.668
0.664
0.661
0.652
0.648
0.642
0.636
0.631
0.624
0.617
0.612
0.605
0.599
0.591
0.582
0.576
0.569
0.561
0.555
0.547
0.541
161.6
161.1
160.7
160.1
159.7
159.2
158.7
158.2
157.7
157.2
156.7
156.0
155.7
155.0
154.5
153.9
153.4
152.8
152.2
151.6
151.0
150.4
149.8
149.2
148.6
147.8
147.3
146.7
146.0
145.5
144.8
144.1
143.5
142.7
142.1
141.5
140.7
140.1
139.5
138.8
138.1
137.5
136.8
136.1
8.1
6.5
4.9
3.3
1.6
-0.1
-1.8
-3.5
-5.3
-7.1
-9.0
-10.8
-12.7
-14.7
-16.6
-18.6
-20.7
-22.9
-25.0
-27.3
-29.6
-31.9
-34.4
-36.9
-39.4
-42.1
-44.8
-47.7
-50.5
-53.5
-56.5
7.4
6.2
4.6
3.0
1.3
-0.4
-2.2
-4.0
-6.1
-8.1
-10.3
-12.4
-14.8
-17.0
-19.5
96.2
93.3
90.2
87.0
83.8
(continued)
MRFG35010AR1
RF Device Data
Freescale Semiconductor
9
Table 6. Class AB Common Source S-Parameters (V = 12 Vdc, I = 1000 mA, T = 25°C, 50 ohm system) (continued)
DD
DQ
C
S
S
S
S
22
11
21
12
f
GHz
|S
|
∠ φ
80.3
|S
|
∠ φ
|S
|
∠ φ
|S |
22
∠ φ
135.4
134.6
133.9
133.0
132.1
131.3
130.3
129.2
128.1
126.7
125.1
123.6
121.7
119.6
117.2
114.6
111.4
108.1
104.2
99.8
11
21
12
4.70
4.75
4.80
4.85
4.90
4.95
5.00
5.05
5.10
5.15
5.20
5.25
5.30
5.35
5.40
5.45
5.50
5.55
5.60
5.65
5.70
5.75
5.80
5.85
5.90
5.95
6.00
6.05
6.10
6.15
6.20
6.25
6.30
6.35
6.40
6.45
6.50
6.55
6.60
6.65
6.70
6.75
6.80
6.85
0.706
0.693
0.680
0.667
0.655
0.642
0.630
0.618
0.608
0.598
0.591
0.583
0.579
0.576
0.576
0.576
0.580
0.585
0.592
0.601
0.613
0.627
0.646
0.667
0.688
0.708
0.730
0.751
0.772
0.793
0.812
0.831
0.850
0.866
0.881
0.896
0.908
0.920
0.930
0.938
0.946
0.953
0.959
0.967
1.683
1.706
1.729
1.752
1.775
1.797
1.819
1.839
1.859
1.878
1.896
1.910
1.924
1.937
1.947
1.952
1.957
1.953
1.943
1.929
1.913
1.900
1.885
1.864
1.834
1.800
1.760
1.716
1.668
1.617
1.561
1.504
1.445
1.385
1.323
1.261
1.199
1.138
1.077
1.018
0.961
0.906
0.853
0.802
-59.6
-62.7
-66.0
-69.4
-72.8
-76.3
-79.9
-83.6
-87.4
-91.2
-95.2
-99.3
-103.4
-107.7
-112.0
-116.5
-121.2
-125.8
-130.5
-135.3
-139.9
-144.6
-149.5
-154.6
-159.8
-164.9
-170.1
-175.2
179.7
174.6
169.6
164.6
159.6
154.7
150.0
145.3
140.7
136.3
132.0
127.8
123.8
119.8
116.0
112.2
0.1025
0.1061
0.1097
0.1136
0.1175
0.1214
0.1254
0.1294
0.1335
0.1377
0.1412
0.1451
0.1488
0.1526
0.1561
0.1594
0.1627
0.1651
0.1675
0.1691
0.1707
0.1724
0.1739
0.1749
0.1753
0.1750
0.1740
0.1728
0.1709
0.1685
0.1654
0.1620
0.1584
0.1542
0.1498
0.1447
0.1399
0.1351
0.1303
0.1254
0.1202
0.1153
0.1103
0.1056
-21.9
-24.5
-27.2
-30.0
-32.8
-35.8
-39.0
-42.2
-45.5
-49.1
-52.7
-56.2
-60.1
-63.9
-67.9
-72.0
-76.3
-80.6
-85.0
-89.5
-93.8
-98.2
-102.8
-107.5
-112.4
-117.3
-122.2
-127.1
-132.1
-136.9
-141.9
-146.8
-151.5
-156.4
-161.0
-165.4
-169.7
-173.9
-178.1
177.8
173.9
170.0
166.4
162.8
0.534
0.526
0.519
0.512
0.504
0.496
0.489
0.481
0.474
0.467
0.459
0.450
0.441
0.431
0.421
0.410
0.397
0.383
0.368
0.350
0.331
0.312
0.292
0.272
0.251
0.232
0.215
0.204
0.200
0.204
0.218
0.240
0.268
0.299
0.335
0.371
0.407
0.444
0.479
0.513
0.547
0.579
0.608
0.637
76.6
72.8
68.8
64.6
60.1
55.5
50.6
45.5
40.2
34.5
28.8
22.7
16.5
10.1
3.5
-3.2
-9.7
-16.2
-22.7
-28.8
-34.6
-40.5
-46.4
-52.2
-57.7
-63.0
-68.2
-73.1
-77.7
-82.3
-86.6
-90.8
-94.8
-98.7
-102.3
-105.9
-109.2
-112.4
-115.4
-118.3
-121.0
-123.7
-126.4
95.1
89.6
83.2
75.6
66.6
56.0
43.8
29.6
14.1
-1.8
-16.7
-30.5
-42.5
-52.6
-61.5
-69.3
-76.1
-82.4
-88.0
-93.1
-97.9
-102.3
-106.4
-110.2
(continued)
MRFG35010AR1
RF Device Data
Freescale Semiconductor
10
Table 6. Class AB Common Source S-Parameters (V = 12 Vdc, I = 1000 mA, T = 25°C, 50 ohm system) (continued)
DD
DQ
C
S
S
S
S
22
11
21
12
f
GHz
|S
|
∠ φ
|S
|
∠ φ
108.7
105.4
102.3
99.4
96.5
93.7
91.0
88.4
85.9
83.5
81.1
78.9
76.8
74.8
72.9
71.1
69.4
67.7
66.0
64.3
62.7
61.0
59.4
|S
|
∠ φ
|S |
22
∠ φ
11
21
12
6.90
6.95
7.00
7.05
7.10
7.15
7.20
7.25
7.30
7.35
7.40
7.45
7.50
7.55
7.60
7.65
7.70
7.75
7.80
7.85
7.90
7.95
8.00
0.969
0.971
0.972
0.973
0.974
0.974
0.975
0.976
0.976
0.977
0.978
0.977
0.975
0.975
0.975
0.974
0.976
0.979
0.983
0.986
0.986
0.984
0.983
-128.8
-131.2
-133.4
-135.4
-137.3
-139.2
-140.9
-142.6
-144.3
-145.8
-147.3
-148.8
-150.0
-151.4
-152.6
-153.7
-154.7
-155.7
-156.8
-158.0
-159.1
-160.2
-161.2
0.752
0.704
0.660
0.620
0.582
0.547
0.513
0.482
0.453
0.426
0.400
0.376
0.354
0.332
0.313
0.295
0.278
0.263
0.249
0.235
0.222
0.210
0.199
0.1006
0.0959
0.0915
0.0874
0.0834
0.0795
0.0760
0.0726
0.0694
0.0665
0.0633
0.0605
0.0577
0.0553
0.0531
0.0511
0.0492
0.0475
0.0459
0.0438
0.0421
0.0404
0.0387
159.3
156.2
153.2
150.3
147.6
145.0
142.4
140.0
137.7
135.2
133.0
131.0
129.4
127.8
125.9
124.2
123.0
121.1
119.0
117.2
115.6
113.5
111.8
0.662
0.686
0.709
0.729
0.749
0.769
0.786
0.802
0.817
0.830
0.843
0.856
0.866
0.878
0.888
0.897
0.906
0.913
0.918
0.925
0.931
0.937
0.944
-113.9
-117.2
-120.4
-123.3
-126.0
-128.7
-131.3
-133.7
-136.0
-138.2
-140.2
-142.2
-144.1
-146.0
-147.8
-149.6
-151.2
-152.8
-154.4
-155.8
-157.1
-158.4
-159.7
MRFG35010AR1
RF Device Data
Freescale Semiconductor
11
Table 7. Class AB Common Source S-Parameters (V = 12 Vdc, I = 140 mA, T = 25°C, 50 ohm system)
DD
DQ
C
S
S
S
S
22
11
21
12
f
GHz
|S
|
∠ φ
|S
|
∠ φ
91.6
89.0
86.6
84.7
82.8
81.0
79.3
77.7
76.1
74.6
73.1
71.6
70.2
68.7
67.3
65.9
64.5
63.1
61.7
60.3
59.0
57.6
56.2
54.9
53.5
52.2
50.8
49.5
48.1
46.8
45.5
44.3
42.5
41.2
39.8
38.4
37.1
35.7
34.4
33.0
31.6
30.2
28.9
27.5
26.1
|S
|
∠ φ
9.9
|S |
22
∠ φ
11
21
12
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
0.937
0.936
0.934
0.937
0.937
0.936
0.937
0.936
0.936
0.936
0.936
0.936
0.936
0.935
0.936
0.935
0.936
0.934
0.934
0.934
0.934
0.934
0.933
0.933
0.933
0.932
0.932
0.932
0.932
0.931
0.931
0.931
0.927
0.926
0.926
0.925
0.925
0.924
0.923
0.923
0.922
0.921
0.919
0.919
0.917
-166.5
-169.5
-171.9
-173.9
-175.5
-176.9
-178.2
-179.2
179.7
178.8
177.9
177.0
176.2
175.4
174.7
173.9
173.2
172.6
171.8
171.1
170.4
169.7
169.1
168.4
167.7
167.1
166.4
165.7
164.8
164.1
163.4
162.6
163.2
162.6
162.0
161.2
160.6
159.9
159.3
158.6
157.9
157.1
156.5
155.7
154.9
8.882
7.414
6.373
5.598
4.983
4.497
4.098
3.765
3.481
3.241
3.031
2.849
2.690
2.548
2.420
2.307
2.206
2.111
2.028
1.949
1.879
1.814
1.755
1.700
1.647
1.598
1.554
1.510
1.472
1.432
1.395
1.357
1.383
1.357
1.332
1.309
1.287
1.267
1.250
1.232
1.215
1.200
1.186
1.173
1.162
0.0167
0.0166
0.0168
0.0170
0.0170
0.0169
0.0172
0.0171
0.0172
0.0174
0.0173
0.0174
0.0176
0.0177
0.0177
0.0179
0.0181
0.0181
0.0183
0.0184
0.0186
0.0187
0.0188
0.0189
0.0192
0.0194
0.0195
0.0196
0.0198
0.0199
0.0201
0.0202
0.0212
0.0215
0.0216
0.0221
0.0224
0.0226
0.0230
0.0234
0.0236
0.0241
0.0246
0.0249
0.0254
0.755
0.757
0.760
0.760
0.760
0.761
0.761
0.761
0.761
0.762
0.762
0.761
0.761
0.762
0.761
0.761
0.761
0.761
0.761
0.761
0.762
0.761
0.762
0.762
0.762
0.761
0.761
0.761
0.762
0.762
0.763
0.763
0.755
0.754
0.753
0.752
0.752
0.751
0.751
0.750
0.749
0.749
0.746
0.746
0.744
-175.6
-176.8
-177.8
-178.5
-179.2
-179.8
179.7
179.2
178.7
178.3
177.9
177.5
177.2
176.9
176.5
176.1
175.8
175.5
175.1
174.8
174.5
174.1
173.8
173.5
173.2
172.9
172.7
172.5
172.2
172.1
171.9
171.9
169.0
168.5
168.1
167.7
167.3
166.9
166.5
166.0
165.6
165.0
164.7
164.3
163.9
8.8
8.1
7.7
7.7
7.6
7.7
8.0
7.7
8.0
7.9
8.0
8.6
8.7
8.9
9.1
9.1
9.1
9.4
9.1
9.4
9.6
9.7
9.8
10.0
10.2
10.0
10.2
10.2
10.2
10.3
10.4
10.0
10.0
10.2
10.2
10.0
10.0
10.0
9.8
9.9
9.6
9.3
9.1
9.3
(continued)
MRFG35010AR1
RF Device Data
Freescale Semiconductor
12
Table 7. Class AB Common Source S-Parameters (V = 12 Vdc, I = 140 mA, T = 25°C, 50 ohm system) (continued)
DD
DQ
C
S
S
S
S
22
11
21
12
f
GHz
|S
|
∠ φ
|S
|
∠ φ
24.7
23.3
21.9
20.4
19.0
17.6
16.1
14.7
13.2
11.7
10.2
8.7
|S
|
∠ φ
8.8
|S |
22
∠ φ
11
21
12
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
3.75
3.80
3.85
3.90
3.95
4.00
4.05
4.10
4.15
4.20
4.25
4.30
4.35
4.40
4.45
4.50
4.55
4.60
4.65
0.917
0.916
0.914
0.914
0.911
0.910
0.908
0.907
0.906
0.903
0.901
0.899
0.898
0.895
0.892
0.889
0.887
0.884
0.881
0.879
0.876
0.872
0.868
0.864
0.860
0.860
0.852
0.846
0.841
0.837
0.830
0.825
0.817
0.812
0.805
0.799
0.791
0.783
0.777
0.769
0.759
0.749
0.738
0.727
154.2
153.5
152.6
151.9
151.1
150.3
149.5
148.6
147.7
146.8
145.9
145.0
143.9
143.1
142.0
141.0
139.9
138.9
137.8
136.6
135.4
134.1
132.8
131.5
130.1
128.6
127.3
125.7
124.2
122.6
120.8
119.0
117.3
115.3
113.3
111.3
109.0
106.7
104.3
101.7
98.9
1.151
1.141
1.132
1.124
1.116
1.111
1.104
1.100
1.096
1.092
1.089
1.088
1.085
1.086
1.086
1.087
1.089
1.092
1.095
1.099
1.104
1.109
1.115
1.121
1.129
1.138
1.147
1.157
1.168
1.181
1.192
1.206
1.220
1.236
1.252
1.270
1.288
1.308
1.328
1.347
1.370
1.390
1.412
1.436
0.0256
0.0262
0.0267
0.0272
0.0277
0.0282
0.0290
0.0296
0.0302
0.0310
0.0317
0.0324
0.0333
0.0340
0.0350
0.0361
0.0371
0.0379
0.0386
0.0394
0.0406
0.0418
0.0429
0.0440
0.0452
0.0468
0.0480
0.0494
0.0509
0.0528
0.0543
0.0560
0.0580
0.0600
0.0621
0.0643
0.0665
0.0690
0.0714
0.0739
0.0766
0.0792
0.0819
0.0849
0.743
0.742
0.741
0.740
0.739
0.736
0.735
0.733
0.731
0.729
0.727
0.725
0.722
0.721
0.719
0.716
0.713
0.711
0.708
0.705
0.702
0.698
0.695
0.691
0.688
0.686
0.679
0.675
0.670
0.666
0.661
0.656
0.650
0.646
0.641
0.635
0.628
0.621
0.615
0.609
0.602
0.596
0.589
0.583
163.4
163.0
162.6
162.0
161.6
161.0
160.6
160.1
159.5
159.0
158.5
157.9
157.6
156.8
156.3
155.8
155.2
154.6
154.0
153.4
152.8
152.2
151.5
150.9
150.2
149.5
148.9
148.2
147.5
146.8
146.1
145.3
144.7
143.8
143.0
142.2
141.3
140.6
139.8
138.9
138.1
137.2
136.3
135.3
8.8
8.6
8.2
8.0
8.1
7.7
7.3
7.1
6.6
6.4
5.8
7.2
5.3
5.6
4.9
4.1
4.5
2.5
3.8
0.9
2.7
-0.7
1.9
-2.4
0.9
-4.0
0.9
-5.7
0.3
-7.4
-0.6
-1.4
-2.2
-2.9
-3.6
-5.0
-5.8
-6.4
-7.8
-8.7
-9.9
-11.0
-12.2
-13.5
-15.0
-16.6
-18.1
-19.8
-21.5
-23.4
-25.3
-27.3
-29.5
-9.2
-11.0
-12.7
-14.6
-16.5
-18.4
-20.3
-22.3
-24.3
-26.4
-28.5
-30.7
-33.0
-35.2
-37.7
-40.1
-42.6
-45.2
-47.9
-50.6
-53.5
-56.4
96.0
93.1
90.1
(continued)
MRFG35010AR1
RF Device Data
Freescale Semiconductor
13
Table 7. Class AB Common Source S-Parameters (V = 12 Vdc, I = 140 mA, T = 25°C, 50 ohm system) (continued)
DD
DQ
C
S
S
S
S
22
11
21
12
f
GHz
|S
|
∠ φ
86.7
|S
|
∠ φ
|S
|
∠ φ
|S |
22
∠ φ
134.4
133.4
132.3
131.2
130.0
128.9
127.6
126.2
124.8
123.1
121.3
119.4
117.2
114.9
112.3
109.4
106.0
102.4
98.2
11
21
12
4.70
4.75
4.80
4.85
4.90
4.95
5.00
5.05
5.10
5.15
5.20
5.25
5.30
5.35
5.40
5.45
5.50
5.55
5.60
5.65
5.70
5.75
5.80
5.85
5.90
5.95
6.00
6.05
6.10
6.15
6.20
6.25
6.30
6.35
6.40
6.45
6.50
6.55
6.60
6.65
6.70
6.75
6.80
6.85
0.717
0.705
0.693
0.682
0.670
0.658
0.647
0.636
0.625
0.615
0.607
0.599
0.594
0.590
0.589
0.588
0.590
0.593
0.598
0.605
0.616
0.629
0.648
0.668
0.687
0.706
0.726
0.746
0.766
0.785
0.803
0.820
0.838
0.853
0.867
0.880
0.892
0.902
0.911
0.918
0.926
0.933
0.938
0.946
1.459
1.482
1.505
1.530
1.554
1.578
1.602
1.626
1.649
1.672
1.694
1.713
1.731
1.750
1.764
1.776
1.785
1.787
1.784
1.777
1.767
1.757
1.744
1.724
1.697
1.664
1.627
1.587
1.542
1.494
1.441
1.388
1.332
1.274
1.216
1.157
1.099
1.041
0.985
0.929
0.876
0.825
0.777
0.729
-59.3
-62.4
-65.6
-68.8
-72.2
-75.6
-79.2
-82.8
-86.6
-90.4
-94.4
-98.5
-102.7
-107.0
-111.4
-116.0
-120.8
-125.6
-130.4
-135.3
-140.2
-145.1
-150.3
-155.6
-160.9
-166.2
-171.5
-176.8
178.0
172.8
167.6
162.4
157.3
152.3
147.5
142.7
138.0
133.5
129.2
125.0
120.9
116.9
112.9
109.2
0.0880
0.0913
0.0945
0.0977
0.1016
0.1051
0.1089
0.1127
0.1167
0.1207
0.1244
0.1281
0.1319
0.1357
0.1392
0.1428
0.1461
0.1488
0.1514
0.1533
0.1551
0.1571
0.1584
0.1596
0.1599
0.1597
0.1589
0.1578
0.1562
0.1542
0.1515
0.1484
0.1450
0.1410
0.1368
0.1323
0.1280
0.1236
0.1193
0.1149
0.1102
0.1058
0.1012
0.0968
-31.6
-33.8
-36.1
-38.6
-41.2
-43.8
-46.6
-49.6
-52.7
-56.1
-59.5
-62.9
-66.6
-70.3
-74.2
-78.2
-82.6
-86.7
-91.0
-95.6
-100.0
-104.5
-109.1
-113.9
-118.7
-123.7
-128.5
-133.4
-138.3
-143.2
-148.1
-153.0
-157.8
-162.5
-167.0
-171.3
-175.6
-179.7
176.3
172.1
168.3
164.6
161.0
157.4
0.576
0.568
0.560
0.553
0.544
0.536
0.527
0.519
0.510
0.502
0.492
0.482
0.471
0.460
0.449
0.436
0.423
0.407
0.392
0.373
0.354
0.334
0.314
0.294
0.275
0.257
0.243
0.234
0.231
0.236
0.249
0.269
0.293
0.322
0.355
0.388
0.423
0.457
0.490
0.523
0.555
0.585
0.613
0.641
83.2
79.6
75.8
71.7
67.4
62.9
58.1
53.1
47.9
42.3
36.5
30.4
24.0
17.5
10.7
3.7
-3.2
-10.1
-17.0
-23.5
-29.8
-36.1
-42.5
-48.8
-54.8
-60.5
-66.1
-71.3
-76.3
-81.1
-85.6
-90.0
-94.2
-98.2
-102.0
-105.6
-109.0
-112.2
-115.3
-118.2
-121.0
-123.7
-126.3
93.6
88.4
82.7
76.0
68.3
59.4
49.1
37.5
24.5
10.5
-3.7
-17.1
-29.9
-41.1
-51.0
-59.8
-67.7
-74.6
-81.0
-86.7
-91.9
-96.8
-101.4
-105.6
-109.5
(continued)
MRFG35010AR1
RF Device Data
Freescale Semiconductor
14
Table 7. Class AB Common Source S-Parameters (V = 12 Vdc, I = 140 mA, T = 25°C, 50 ohm system) (continued)
DD
DQ
C
S
S
S
S
22
11
21
12
f
GHz
|S
|
∠ φ
|S
|
∠ φ
105.6
102.3
99.2
96.2
93.3
90.4
87.7
85.1
82.7
80.3
77.9
75.7
73.6
71.6
69.8
67.9
66.3
64.8
63.0
61.4
59.7
58.0
56.5
|S
|
∠ φ
|S |
22
∠ φ
11
21
12
6.90
6.95
7.00
7.05
7.10
7.15
7.20
7.25
7.30
7.35
7.40
7.45
7.50
7.55
7.60
7.65
7.70
7.75
7.80
7.85
7.90
7.95
8.00
0.948
0.950
0.952
0.953
0.953
0.954
0.956
0.957
0.958
0.959
0.961
0.961
0.959
0.960
0.960
0.960
0.962
0.967
0.970
0.974
0.975
0.973
0.973
-128.8
-131.1
-133.3
-135.3
-137.2
-139.1
-140.8
-142.4
-144.1
-145.5
-147.0
-148.5
-149.8
-151.1
-152.3
-153.4
-154.4
-155.4
-156.6
-157.8
-158.9
-159.9
-161.0
0.684
0.638
0.598
0.561
0.526
0.493
0.462
0.434
0.407
0.382
0.359
0.337
0.316
0.297
0.279
0.263
0.247
0.234
0.221
0.209
0.198
0.186
0.176
0.0930
0.0882
0.0843
0.0805
0.0771
0.0738
0.0701
0.0672
0.0645
0.0617
0.0589
0.0561
0.0535
0.0515
0.0496
0.0476
0.0459
0.0446
0.0430
0.0414
0.0397
0.0379
0.0360
154.1
151.3
148.5
145.7
142.9
140.2
137.8
135.5
133.4
130.8
128.7
126.6
125.1
123.7
122.1
120.3
118.9
117.2
115.2
113.5
111.3
109.5
108.7
0.665
0.688
0.711
0.730
0.750
0.770
0.786
0.802
0.817
0.831
0.843
0.855
0.865
0.877
0.887
0.895
0.905
0.912
0.917
0.923
0.928
0.934
0.941
-113.3
-116.7
-119.9
-122.8
-125.6
-128.3
-131.0
-133.4
-135.7
-138.0
-140.0
-141.9
-143.8
-145.8
-147.6
-149.4
-151.0
-152.6
-154.2
-155.6
-156.9
-158.3
-159.5
MRFG35010AR1
RF Device Data
Freescale Semiconductor
15
PACKAGE DIMENSIONS
NOTES:
G
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED .030 (0.762) AWAY
FROM PACKAGE BODY.
2 x
K
S
(INSULATOR)
1
2
M
M
M
B
bbb
T A
B
(FLANGE)
3
INCHES
DIM MIN MAX
MILLIMETERS
2 x
MIN
20.19
5.72
3.18
0.89
1.40
0.10
MAX
20.45
5.97
4.47
1.12
1.65
0.15
Q
bbb
A
B
.795
.225
.125
.034
.055
.004
.805
.235
.176
.044
.065
.006
2 x
B
M
M
M
D
T A
T A
B
C
M
M
M
bbb
B
D
E
F
G
.562 BSC
14.28 BSC
N (LID)
H
.077
.085
.355
.355
.125
.225
.225
.087
.115
.365
.365
.135
.235
.235
1.96
2.16
9.02
9.96
3.18
5.72
5.72
2.21
2.92
9.27
10.16
3.43
5.97
5.97
0.13
0.25
0.38
R (LID)
K
M
M
M
ccc
T A
B
M
M
M
M
ccc
T A
B
N
F
Q
E
H
R
S
C
aaa
bbb
ccc
.005
.010
.015
T
M
SEATING
PLANE
STYLE 1:
(INSULATOR)
PIN 1. GATE
2. DRAIN
3. SOURCE
M
M
M
B
aaa
T A
A
A
CASE 360D-02
ISSUE C
NI-360HF
MRFG35010AR1
RF Device Data
Freescale Semiconductor
16
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
2
May 2006
June 2006
Dec. 2008
•
•
•
Initial Release of Data Sheet
Removed R5 suffix from part number and Tape and Reel info, p. 1
Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for
standardization across products, p. 1
•
•
Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum
channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1
Added Table 3, ESD Protection Characteristics, p. 1; renumbered subsequent tables
MRFG35010AR1
RF Device Data
Freescale Semiconductor
17
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Document Number: MRFG35010A
Rev. 2, 12/2008
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