MRFIC0970R2 [NXP]
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, PLASTIC, QFN-20;
| 型号： | MRFIC0970R2 |
| 厂家： | 
NXP |
| 描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, PLASTIC, QFN-20 高功率电源 放大器 射频 微波 功率放大器 |
| 文件： | 总6页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Technical Data
MRFIC0970/D
Rev. 0, 07/2002
3.2 V GSM GaAs
Integrated Power
Amplifier
MRFIC0970
(Scale 2:1)
Package Information
Plastic Package
Case 1308
(QFN-20)
Ordering Information
Device
MRFIC0970
Marking
Package
QFN-20
0970
The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900
handheld radios. The device is packaged in the QFN-20 package, with exposed backside pad,
which allows excellent electrical and thermal performance through a solderable contact.
•
Target 3.2 V Characteristics:
RF Output Power: 34.5 dBm Typical
Efficiency: 50% Typical
•
•
Single Positive Supply Solution
Available in Tape and Reel only. R2 Suffix = 2500 Units per 12 mm, 13 inch Reel
MRFIC0970
MOTOROLA WIRELESS
2–92
RF PRODUCT DEVICE DATA
Electrical Characteristics
D1
D2
RFin (G1)
VG1,2
D3
GND
ABC1,2
ABC3
VGG3
VGG1,2
ABC
VG3
V
ref
Figure 1. Functional Block Diagram
1 Electrical Characteristics
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VD1,2,3, Vabc
Vref
8.0
5.0
V
V
RF Input Power
Pin
Pout
TC
15
38
dBm
dBm
°C
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Junction Temperature
-40 to 85
-40 to 85
150
Tstg
TJ
°C
°C
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Electrical Characteristics
or Recommended Operating Conditions tables.
2
ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤250 V and
Machine Model (MM) ≤60 V. This device is rated Moisture Sensitivity Level (MSL) 1.
Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Voltage
Input Power
VD1,2,3
Vabc
Vref
2.8
0
0.04
-
-
-
5.5
5.5
1.8
Vdc
V
V
Pin
5.0
-
10
dBm
MOTOROLA WIRELESS
MRFIC0970
RF PRODUCT DEVICE DATA
2–93
Electrical Characteristics
Table 3. Electrical Specifications
(VD1,2,3 = 3.2 V, Vabc = 2.6 V, Pin = 5.0 dBm, Peak measurement at 12.5% duty cycle, 4.6 ms period, TA = 25°C, unless otherwise
noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
Output Power
BW
Pout
880
-
-
915
-
MHz
dBm
34.5
Power Added Efficiency
PAE
50
-
-
-
-
-
%
Minimum Output Power (Vref = 0.04, Vabc = 2.6 V)
Power Control Slope (Vref = 0.1 to 1.8 V, ∆Vref = 0.01 V)
-17
50:1
dBm
RFVrms
-
/Vref
Bleed thru Power (Pin(fo) ≤ -12dBm, Vref = 0.04,
-
-
-
-
-36
35
dBm
mA
Vabc = 10 k load)
RF Leakage Current (IDD1 + IDD2 +IDD3, Pin (fo) ≤5.0
dBm)
(Vabc = 10 k load, Vref = 0.04 V)
Output Power Switching Speed ( step input of Vref RF
Pout within 1.0 dB of final value)
-
-
-
-
1.0
6.0
µs
Input Return Loss
|S11|
NP
dB
Noise Power in Rx band
925 to 935 MHz
dBm
-
-
-
-
-73
-85
935 to 960 MHz
Stability-Spurious Output (Load VSWR 6:1 all phase
angles, Adjust VD1, 2&3 for specified power)
Pspur
-
-
-30
dBc
Load Mismatch Stress (Load VSWR = 10:1 all phase
angles, 5 seconds, Adjust VD1, 2&3 for specified power)
No Degradation in Output Power
Before & After Test
MRFIC0970
2–94
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
Pin Connections
2 Pin Connections
S1/
RFin
(G1)
16
N.C.
19
GND
D1
20
N.C.
17
18
D2
1
2
3
4
5
15 VG1,2
14 VGG1,2
13 ABC
12 VGG3
11 VG3
N.C.
N.C.
N.C.
N.C.
6
7
8
9
10
D3/ D3/ D3/ D3/ N.C.
RF RF RF RF
OUT OUT OUT OUT
Figure 2. Pin Connections
3 Typical Performance Characteristics
35.6
TA = -40°C
35.4
35.2
25°C
35
P = 5.0 dBm
in
34.8
34.6
34.4
34.2
VDD = 3.2 V
85°C
Vref = 1.8 V
880
885
890
895
900
905
910
915
f, FREQUENCY (MHz)
Figure 3. Output Power versus Frequency
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRFIC0970
2–95
Typical Performance Characteristics
38
37.5
37
VDD = 5.5 V
36.5
36
P = 5.0 dBm
in
TA = 25°C
Vref = 1.8 V
35.5
35
3.2 V
34.5
34
2.8 V
905
33.5
880
885
890
895
900
910
915
f, FREQUNCY (MHz)
Figure 4. Output Power versus Frequency
65
60
55
50
45
TA = -40°C
25°C
85°C
910
P = 5.0 dBm
in
VDD = 3.2 V
Vref = 1.8 V
880
885
890
895
900
905
915
f, FREQUENCY (MHz)
Figure 5. Power Added Efficiency versus Frequency
65
60
VDD = 2.8 V
3.2 V
55
50
45
40
35
P = 5.0 dBm
in
TA = 25°C
Vref = 1.8 V
5.5 V
905
880
885
890
895
900
910
915
f, FREQUENCY (MHz)
Figure 6. Power Added Efficiency versus Frequency
MRFIC0970
2–96
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
Application Schematic
4 Application Schematic
VDD1
RF In
470
470
1.0 µF
Ferrite Bead
120 Ω
12
0.1 µF
1.0 nF
100 pF
T3
T2
20
19
18
17
N.C.
16
T1
VDD2
VG1,2
1
2
3
4
5
15
1.0 nF
V
14
13
12
11
ref
N.C.
1.0 nF
680
ABC
N.C.
N.C.
1.0 nF
0.1 µF
1.0 nF
0.1 µF
240
VG3
N.C.
N.C.
10
6
7
8
9
T1 = .100 in, Z = 50 Ω
VDD3
1.0 nF
o
T2 = .275 in, Z = 50 Ω
12.55 nH
Coilcraft
1601-10
o
T3 = .166 in, Z = 50 Ω
o
T4
T5
T4 = .041 in, Z = 50 Ω
o
T5 = .420 in, Z = 50 Ω
o
27 pF
0.1 µF
47 µF
6.8 pF
4700 pF
RF Out
Figure 7. Application Schematic
MOTOROLA WIRELESS
MRFIC0970
RF PRODUCT DEVICE DATA
2–97
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ROCHESTER
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